aac ) mm 8235605 0004379 8 MESIEG | NPN Silicon Epibase Transistors 7-33 25C 04379 D SIEMENS AKTIENGESELLSCHAF The transistors BD 611, BD 613, BD 615, BD 617, and BD 619 are NPN silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically connected to the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driver stages as well as for general AF applications. Their complementary types are the PNP transistors BD 612, BD 614, BD 616, BD 618, and BD 611 BD 613 BD 615 BD 617 BD 619 -097 BD 620. Type | Ordering code Type | Ordering code BD 611 Q62702-D946 BD 611/8D 612 pair. | Q62702-D1103 BD 613 0Q62702-D948 BD 613/8D 614 pair. | 62702-01104 BD 615 Q62702-D950 BD 615/BD 616 pair. | 062702-D1105 BD 617 Q62702-D952 BD 617/8D 618 pair. | Q62702-D1106 BD 619 Q62702-D954 BD 619/BD 620 pair. | Q62702-D1107 3 a . t ' in so 3 o4. Das Tare Ee : 8S - 3 1 a 22202 B j S| oot =} t 3 7 y | ' ae) 132 15202 fe ae elagen olgple- f Available upon request also with bent pe 13,2 21 a7 202 fixing ptate Approx. weight 15 g. Dimensions in mm Maximum ratings | BD 611| BD 613] BD 615| BD 617| BD 619 Collector-emitter voltage Vero | 22 32 45 60 80 Vv Coltector-emitter voltage Vers | 22 32 45 60 80 Vv Collector-base voltage Vego | 22 32 45 60 80 Vv Emitter-base voltage Veso | 5 5 5 5 5 Vv Collector current Ic 4 4 4 4 4 A Collector peak current (t < 11 ms) Tom 7 7 7 7 7 A Emitter peak current (t < 10 ms) Ten 7 7 7 7. 7 A Base current Ig 1 1 1 1 1 A Junction temperature T; 150 150 150~ |150 150 c Storage temperatura range T stg 55 to +150 C Tota! power dissipation (Tease & 25C) Pot [15 [15 [15 [15 [15 Ww Thermal resistance Junction to ambient air Rina | $62.5 | $62,5 | $62,5 | <62,5 |s62,5 |K/w Junction to mounting area Anse 1983 [58,3 |58,3 |58,3 |58,3 | KAV ee 425 1802 c-05 + wed os co wi fF 60 4 MBSIEG 5 1 alle whee 2e5C D) MM 4235605 00043 LUG u~yrIou coos BD 611 SIEMENS BD 613 AKTIENGESELLSCHAF BD 615 BD 617 BD 619 Static characteristics (Teasg = 26C) BD 611 | BD 613 | BD 615 | BD 617 | BD 619 Collector-emitter breakdown voltage Ue = 100 mA) Viarjceo >22 >32 >45 >60 >80 Vv Collector-emitter breakdown voltage Ue = 100 pA) Visrices >22 >32 >45 >60 >80 Vv Collector-base breakdown voltage (Jc = 100 pA) Viprjceo | > 22 >32 >45 >60 >80 Vv Emitter-base breakdown voltage (fg = 1 mA) Vianyepo | >5 >5 >6 >5 >5 Vv Collector cutoff current (Vcg = 22 V) Tego <100 | = ~ - - pA Collector cutoff current (Veg = 32 V) Icpo - <100 - - - HA = Collector cutoff current (Veg = 45 V) Tego - - <100 | - - pA Collector cutoff current (Vcp =60V) Icso - - - <100 - vA Collector cutoff current (Vcp = 80V) Topo - - - - <100 pA Collector cutoff current (Veg = 10 V: Tamb = 150C} Jcpo <1 <1 <1 <1 <1 mA Collector cutoff current (Veg = Vogmax? Tamb = 150C) Icgo <3 <3 <3 <3 <3 mA Base-emitter forward voltage Uc = 2A: Vee = 1 V) Ver <1.1 <1. <1.2 <1.5 <1.5 Vv Base-emitter forward voltage Uc = 3A: Vee = 1 V) Vee - - <1.3 <1.6 1<1.6 Vv Collector-emitter saturation voltage (fg = 2 A)" Veesat | <O.8 | <08 |- - - Vv Collector-emitter saturation voltage (Ic =2A;Ig=0.2A} Veesat <0.5 <0.5 <0.6 <0.8 <0.8 Vv Collector-emitter saturation voltage (fc =3A; Jg=0.3A) Veesat - - <0.7 <0.9 <0.9 Vv DC current gain (Ip = 10 mA; Veg = 5 V) hee >40 >40 >30 >20 >15 - (Ig = 500 mA; Vee = 1 V) hee >85 >85 >85. | >40 >40 - (Ug = 2A: Vee = 1 V) hre >50 >50 >40 >25 >15 - 1} For the characteristics which passes through the point [c = 2.2 Aand VCE = 1 V at constant base current. > 426 1803 C-06 asc D MM 8235605 000438) & MESIEG _ 25 04381 SIEMENS AKTIENGESELLSCHAF Dynamic characteristics (T,as, = 25C) 23-07 | BD 611 BD 613 BD 615 BD 617 BD 619 | BD 611 | BD 613 | BD 615 | BD 617 | BD 679 | Transition frequency (Io = 0.25 A; Vog = 1 V; f=1 MHz) tf >3 >3 >3 Cutoff frequency in common emitter configuration (Up = 0.25 A; Vee = 1 V) fate >20 >20 >20 pete ee ee 1804 c-07 v >20 MHz kHz 427 Vidi, anole 1 i yore mee Beene i. ae 25C D MM 8235605 OOO4382 8 MESIEG | ~7i3ZB-o7 STEMENS AKTIENGESELLSCHAF Total perm. power dissipation versus temperature W Prot = f (Tease) 20 10 0. 0 490 450C , TT Permissible operating range To = f (Vee); Teas 25C; D =O BD 611, BD 613, BD 615 625 7 5 40 10 10 eV ~> Vee 428 ee - 1805 C-08 6G U4582 OD BD 611 BD 613 BD 615 BD 617 BD 619 Permissible pulse load Zn Rtn o Tt = O=> 10 we 105 10% 107 10? 0! 10 10's T Permissible operating range Tq = t Vee): Tease $ 25C: D = 0 BD 617, BD 619 v Ie le Ww 270 ve 4s 37 45 10" , + 10 40 10 nV > Ve