HITACHI 2SD1601, 2SD1602 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1101, 2881102 TB Ans Mw ae lo . Base . Collector (Flange) 45kQ Song Emilter (typ) ftyp.] 4 (Dimensions in mm) (JEDEC TO-2204B) @ ABSOLUTE MAXIMUM RATINGS (Ta=25C) MAXIMUM COLLECTOR DISSIPATION CURVE Item |Symbol| 2SDI601 | 2SDi602 | Unit Collector to base voltage VcBo 60 80 v = Collector to emitter voltage | VcEo 60 80 Vv x ~ 5 4 Emitter to base voltage VEBO 7 7 v 3 3 Collector current Ic 4 4 A 3 ps | - & N\ Collector peak current ic(peak) 8 8 ; A 5 a MN Collector power dissipation | Pc* 40 40 WwW g NK : a = Junction temperature Tj 150 150 | C e . _ - Storage temperature Tag | 55 to +150 755 to +1 50 | eC 5 4 ds S C wo E diode forward current | Ip* 4 | 4 A Case temperature Te (C) * Value at Tc = 25C. @ ELECTRICAL CHARACTERISTICS (Ta=25C) 28D1601 25D 1602 Ttem Symbol Test Condition F ) Unit min. | typ. (max. | min. | typ. | max, - - = }- a a Collector to emitter breakdown voltage | VepRiceo | Ic = 25mA, Rak == | 60 | 8&0 a _ Emitter to base breakdown vollage VipREBO | le = 50mA, Ic = 0 7 oe _ 7 _ Uv Icno Ven = 60V, le =0 =} 100) ) ] 100! pa Collector cutoff current - - - + _>_ 1 IcEo Vcr = 50V, Rar = -); lo) | | 10) pA DC current transfer ratio hFE Vcr =3V,1e=2A 1000 | 20000) 1000 |20000 . | Veetsani | Ie= 2A. Ip = 4mA* | |} is} }| |] 15 Collector to emitter saturation voltage | }--}-- ot - - +) OU Vcrisan2 | Ic = 4A, Ip = 40mA* | 3.0) | 3.0 . . Veecant | lc = 2A, In =4mA ve a 2.05 oe 2.0 Base to emitter saturation vollage $$} o oo - | Verisan2 | lo=4A, Ip =40mA* | - 3.5, C to E diode forward voltage | Vb In=4A }| } 30) Vv Turn on time | ton 1.0 | - fp Ic = 2A, _Storage time Js In) =-Ip? = 4mA |_ 60 aL HS Fall time I | | 10 -| | * Pulse Test. HITACHI 2SD1601, 2SD1602 AREA OF SAFE OPERATION Het peade 3h. de Cmax. = iw = Collector current be (Aj Collector current Te (A) ang a0] i 10 iO 100 300 Collector to emitter voltage Woe () DC CURRENT TRANSFER RATIO VS. COLLECTOR CURRENT 10000 ae ~ 3000 = 3 = 1000 8 = BE w 5 3 4 2 z 3 100 ~ 0.1 0.3 1.0 3 10 Callector current Ic (A) SWITCHING TIME VS. COLLECTOR CURRENT 4 = 4 la = a u & & we ING s = a Ss 2 = = aA tl 5 = (ag Veco = fe = 100 Tay = ~ WHT 0H inl ad in 3 In Collector current fe (A) TYPICAL OUTPUT CHARACTERISTICS a v c= 0 1 2 3 4 Collector ta emitter valtage Yoe (vd SATURATION VOLTAGE VS. CULLECTOR CURRENT 1 ie waka cua tt wa ial 4 Collector curremt be (4) TRANSIENT THERMAL RESISTANCE lu be o.u3 Own 1 i} Wa) 1a(s + i 1 10 10) L.000{ms} Time t