MOTOROLA SC {XSTRS/R Fd ao De Beaszesy oosayua o 6367254 MOTOROLA SC XSTRS/R F) 96D 82446 B - 29-2 MAXIMUM RATINGS t Rating Symbol Vatue Unit Collector-Emitter Voltage VcEO 40 Vde_ |. M D3250,A, AF Collector-Base Voltage VcBo 50 Vdc MD3251 )A, F,AF Emitter-Base Voltage VEBO 5.0 Vdc Collector Current Continuous Ie 50 mAde MQ325 1 All Die MD3250,A One Die {Equal Power MD3251,A Total Device Dissipation Pp mW CASE 654-07, STYLE 1 @Ta = 28C MD3250,A, MD3251,A 575 625 MD3260,AF, MD3251F,AF 360 400 MD3250,AF SH MQ3251 400 600 MD3251F,AF Derate above 25C : mwrc . 9 MD3250,A, M03251,A 3.29 3.57 CASE 610A-04, STYLE 1 MD3250,AF, MD3251F,AF 2.0 2.28 Ma3251 2.28 3.42 MQ3251 SE Total Device Dissipation Pp Watts CASE 607-04, STYLE 1 1 @ Tg = 25C 14 MD3250,A, MD3251,A 18 25 DUAL MD3250,AF, MD3251F,AF 1.0 2.0 MQ3251 09 36 AMPLIFIER TRANSISTOR Derate above 25C mwWwre PNP SILICON MD3250,A, MD3251,A 10.3 14.3 MD3250,AF, MD3251F,AF 5.71 11.4 MQ3251 6.13 20.5 Operating and Storage Junction Ty. Tstg ~65 to +200 Temperature Range THERMAL CHARACTERISTICS All Dte Characteristic Symbol One Die Equal Power Unit Thermal Resistance, Junction to Case Rajc *CAV MD3251,A, MD3251,A 97 70 MD3250,AF, MD3251F,AF 176 87.5 MQ3251 195 48.8 Thermal Resistance, Junction to Ambient Real) "CW MD3250,A, MD3251,A 304 280 MD3250,AF, MD3251F,AF 500 438 *MQ3251 438 292 Junction to Junction to Ambient Case Coupling Factors % MD3250,4, MD3251,A 84 44 1 MD3250,AF, MD3251F,AF 75 0 a Ma3251 (Q1-02) 57 0 : (Q1-Q3 or 1-04) 55 0 (1) Raja is measured with the device soldered into a typical printed circult board. - ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic | _ Symbol Min Typ Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) VIBRICEO 40 _ _ Vde {I = 10 mAdc, ip = 0) Collector-Base Breakdown Voltage VIBRICBO 50 _ _ Vde {ic = 10 pAdc, IE = 0} Emitter-Base Breakdown Voltage V(BRIEBO 5.0 _- _ Vde (IE = 10 pAde, Ic = 0) Collector Cutoff Current IcBO (Vcg = 40 Vdc, Iz = 0} _ _ 10 nAdec (Vcg = 40 Vde, Ie = 0, Ta = 180C) - - 10 pAde Emitter Cutoff Current lEBO _- _- 10 nAdc (VBE = 3.0 Vde, Ic = 0) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-74 CT hen 8 at aR PaoMOTOROLA SC {XSTRS/R FI qi DE ffe3e7254 oosauug a 6367254 MOTOROLA SC XSTRS/R F) 96D 82448 D 7 -R4~-37 ae MD3250,A,AF, MD3251,A,F,AF, MQ3251 + ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C unless otherwise noted.) | t i ! Characteristic Symbol | Min | Typ | Max | Unit | ! i ON CHARACTERISTICS(2) } DC Current Gain . hee - , ! (ig = 10 Adc, Vee = 5.0 Vd) MD3250,A,AF 25 75 _ | MD3251,A,F,AF 50 100 _ ( {ig = 100 pAde, Vee = 6.0 Vde} MD3250,A,AF 50 82 160 MD3251,A,F,AF 80 170 300 MQ3251 80 170 _ i (Ic = 100 zAde, Vcg = 5.0 Vde, Ta = 55C) MD3250,A,AF 25 35 ~ i MD3251,A,F,AF 60 75 - i , ic = 1.0 mAde, VcE = 5.0 Vde)} MD3250,A,AF 50 87 150 MD3251,4,F,AF 100 180 300 M0Q3251 100 180 _- (ig = 10 mAde, Veg = 5.0 Vdc) MD3260,A,AF 50 92 MD3251,A,F,AF 100 180 - M3251 400 190 300 (Ic = 50 mAdc, VcE = 5.0 Vdc) MD3250,A,AF 15 50 _ MD3251,A,F,AF 30 90 - MQ3251 30 30 _ Collector-Emitter Saturation Voltage VCE(sat) Vde lic = 10 mAdc, Ip = 1.0 mAdc} _ 0.11 0.26 (ig = 50 mAde, Ip = 5.0 mAde) _ 0.18 05 Base-Emitter Saturation Voltage VBE(sat} Vde {lg = 10 mAdc, Ip = 1.0 mAdc) 0.6 0.78 0.9 (ic = 50 mAdc, Ig = 5.0 mAdc) - 0.BB 12 SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product fT MHz {Ic = 10 mAdc, VcE = 20 Vdc, f = 100 MHz) MD3250,4,AF 200 600 _ MD3251,A,F,AF 250 600 _ MQ3251 300 600 _ Output Capacitance Cobo ad 2.5 6.0 pF (Veg = 5.0 Vde, Ig = 0, f = 100 kHz) Input Capacitance Cibo _ 6.0 8.0 pF (Vpe = 1.0 Vde, Ic = 0, f = 100 kHz) MATCHING CHARACTERISTICS (MD3250,A,AF & MD3251,A,F,AF ONLY) DC Current Gain Ratio(3) heey/hreo _ (Ic = 100 2Adc, Voge = 5.0 Vdc) 0.9 1.0 " (ig = 1.0 mAde, VoEe = 5.0 Vde) 0.9 _ 1.0 Base-Emitter Voltage Differential \Vee1-Vee2l mVde (Ic = 100 pAde, VcE = 5.0 Vdc} _ 3.0 (ic = 10 wAdc, Vee = 5.0 Vado) _ 5.0 (Ig = 10 mAde, VcE = 5.0 Vde) = _ 5.0 Base-Emitter Voltage Differential Change Due to Temperature AlVBE1/VBE2l mVdeo {Ic = 100 pAdc, Vce = 5.0 Vde, Ta = 55 to +25C) _ _ R (lc = 100 pAdc, Voce = 5.0 Vde, Ta = +25 to + 126C) = - 1.0 (2) Pulse Test: Pulse Width < 300 ys, Duty Cycle < 2.0%. {3) The lowest hr reading is taken as hpE} for this ratio. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-75= Rowe ee MOTOROLA SC IXSTRS/R FF qb Def eac7esy ooaeyso a Bf 6367254 MOTOROLA SC CXSTRS/R F) 86D 82456 D MD3250,A,AF, MD3251,A,F,AF, MQ3251 T- aq - at FIGURE 1 CAPACITANCE FIGURE 2 CURRENT-GAIN BANDWIDTH PRODUCT C, CAPACITANCE (pF) 05 1602 | i 4 A tam Sala EET Peter erememtnmnente 1000 fy, CURRENT-GAIN-BANDWIDTH PRODUCT 0.5 1002.0 5.0 10 20 50 NOISE FIGURE VARIATIONS (Ve = 6.0 V, Ta = 25C) FIGURE 3 EFFECTS OF FREQUENCY FIGURE 4 EFFECTS OF SOURCE RESISTANCE 60 10 f= 3 OkH2 80 = = 3 a = 40 =z 5 = 560 o 2 e 8 = = g % So 2 = 2 40 20 s Rs = 1.6492 20 = 100 pA 0 0 of 02 oF 10 20 40 0 82 4000 or 02 04 10 20 40 1 20 40 100 1, FREQUENCY (kHz) Rg, SOURCE RESISTANCE (kQHMS) tpg, OC CURRENT GAIN (NORMALIZED) G2 0! FIGURE 5 OC CURRENT GAIN Ty = 1259 AT Ic= 10 mA, Veg =1.0V 83 M03250,A,F,AF TYPICAL heg = 167 M03251,A.F,AF, M0325 0.2 03 05 Q? 1.0 20 3.0 50 70 10 20 30 60 ic, COLLECTOR CURRENT (mA) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-76HOTOROLA SC {XSTRS/R Ft ie DEBesezesy ooaay7a 9 Pe . Ny 6367254 MOTOROLA SC (XSTRS/R F) S6D 82473 D T- 29-27 MAXIMUM RATINGS Rating Symbol Value Unit MD7003,A,B,AF . Collector-Emitter Voltage VcEO 40 Vde - 7 Collector-Base Voltage VcBo 50 Vde MQ7003 , Emitter-Base Voltage VEBO 6.0 Vde : Collector Current Conti Io 60 mAde MD7003,A,B Al Ole CASE 654-07, STYLE1 7! One Die | Equal Power Total Device Dissipation Po mw @ TA = 26C MD7003,AF M0D7003,A,8 550 800 MD7003,AF 360 400 CASE 610A-04, STYLE 1 Si Ma7003 400 600 Derata above 25C mwrc 8 M07003,A,8 3.14 3.42 MD7003,AF 20 2.28 Ma7003 L MQ7003 2.28 3.42 CASE 607-04, STYLE 1 = Total Device Dissipation Pp Watts @Tc = 26C #407003,4.8 14 2.0 DUAL MD7003,AF 0.7 1.4 AMPLIFIER TRANSISTOR MQ7003 07 2.8 Derate above 25C mwPrc PNP SILICON MD7003,A,B . 8.0 11.4 MD7003,AF 40. . 8.0 Refer to 2N3810 for curves. MQ7003 40 16 : Operating and Storage Junction Ty Tetg 66 to +200 c Temperature Range | THERMAL CHARACTERISTICS Alt Die Characteristic Symbol One Die Equal Power Unit Thermal Resistance, Junction to Case Rasc C/W MD7003,A,8 125 87.5 MD7003,AF 260 126 MQ7003 250 82.6 Thermal Resistance, Junction to Ambient Rayaltl CW MD7003,A,B 319 292 MD7003,AF 500 438 MQ7003 438 292 Junction to | Junction to . Ambient Case . Coupling Factor % I MD7003,A,B 83 40 : MD7003,AF 75 0 Ma7003 (01-02) 57 0 (Q1-Q3 or Q1-04) 6 0 . (1) RaJA is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Tp = 26C unless otherwise noted.) | Characteristic | Symbol | Min I Typ | Max | Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voitaga(2) V(BRICEO 40 _ _ Vde (lc = 10 mAde, Ip = 0) | Collector-Base Breakdown Voltage ViBRICBO 50 - _ Vde {Ic = 10 pAde, Ie = 0} - Emitter-Base Breakdown Voitege VisRIEBO 6.0 ~ - Vde (ig = 10 pAdec, Ic = 0) Collector Cutoff Current IcB0 - - 100 nAdc (Vcp = 30 Vde, Ie = 0) ON CHARACTERISTICS OC Current Gain(2) , hee - (Ic = 100 pAdo, Voge = 10 Vde) 40 350 - (i = 10 mAde, VcE = 10 Vdc) 50 360 - MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-99MOTOROLA SC {XSTRS/R Ft 4h DE Pase725y o0ae474 O I 6367254 MOTOROLA SC CXSTRS/R F) S6D 82474 DB MD7003,A,B,AF, MQ7003 TT -ad-at | ELECTRICAL CHARACTERISTICS (continued) (Ta = 26C unless otherwise noted.) i Characteristic Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage VCE(sat) _ 0.26 0.35 Vde (Ic = 10 mAde, Ip = 1.0 mAde) Base-Emitter Saturation Voltage VBE(sat) _ 0.6 1.0 Vde {Ic = 10 mAdc, ip = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product ft 200 300 ~ MHz (Ig = 5.0 mAdc, VcE = 20 Vde, f = 100 MHz) Output Capacitance Cobo _ 3.0 6.0 pF (Vcp = 10 Vdc, Ie =0, f = 100 kHz) Input Capacitance Cibo _ 2.0 8.0 pF (Vee = 2.0 Vde, Ic = 0, f = 100 kHz) Noise Figure NF _ 2.0 _ dB (ig = 100 pAde, Vcg = 10 Vdc, Rg = 3.0 kohms, f = 10 Hz to 15.7 kHz) MATCHING CHARACTERISTICS DC Current Gain Ratio(3) hpeq/hre2 (Ic = 100 Adc, Vcg = 10 Vdc) MD7003A,AF 0.75 1.0 MD70038 0.85 _- 1.0 Base-Emitter Voltage Differential \VBe1-V Beal mV (ig = 100 pAde, Veg = 10 Vde} MD7003A,AF 25 MD7003B _- _- 15 {2) Pulse Test: Pulse Width < 300 ps, Duty Cycle < 2.0%. (3) The lowest hr reading is taken as heey for this ratio. seatbeat via re MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-100MOTOROLA SC IXSTRS/R Ft db DE Peae7254 ooaey7s 2 y { 6367254 MOTOROLA SC CXSTRS/R F) 96D 82475 B A T-27? -27 . MAXIMUM RATINGS Rating Symbol Value Unit MD7007,A,B,F,BF Collector-Emitter Voltage VcEO 40 Vde Collector-Base Voltage VcBo 50 Vde MQ7007 Emitter-Base Voltage VEBO 5.0 Vde Collector Current Continuous Ic 200 mAdc MD7007, AB All Dia CASE 654-07, STYLE1 7 One Die | Equal Power 1 Total Device Dissipation Pp mW @Ta = 25C M1D7007,A,8 575 625 MD7007F,BF MD7007F.BF 350 400 CASE 610A-04, STYLE Lr MQ7007 400 600 Derate above 25C mwrc 9 MD7007,A,B 3.29 3.57 MD7007F,BF 2.0 2.28 NMa7007 MO7007 2.28 3.42 CASE 607-04, STYLE 1 SE Tota! Device Dissipation Pp Watts 14 @Tc = 25C MD7007,A,B 18 25 DUAL MD7007F,BF 1.0 2.0 ma7007 03 36 AMPLIFIER TRANSISTOR Derate above 25C mwrc MD7007.A,B 10.3 143 PNP SILICON * t MD7007F,BF 5.71 11.4 i MQ7007 5.13 20.5 . Operating and Storage Junction TJ, Tstg 65 to +200 c - Temperature Range THERMAL CHARACTERISTICS All Die Characteristic Symbol One Die Equa! Power Unit : Thermal Resistance, Junction to Case Raic CW MD7007,A,B $7 70 MD7007F,BF 175 87.5 07007 195 48.8 Thermal Resistance, Junction to Ambient Rasalt} CW M07007,A,B 304 280 MD7007F,BF 500 438 MQ7007 438 292 Junction to Junction to Ambient Case Coupling Factors % MD7007,A,B 84 44 ' MD7007F,BF 75 0 ' MaQ7007_ (01-02) 57 0 (Q1-Q2 or 01-04) 55 0 (1) Raga is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) [ Characteristic [ Symbol | Min Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) V(BR}CEO 40 _ - Vde (I = 10 mAdc, Ig = 0) Collector-Base Breakdown Voltage ViBRICBO 50 _ _ Vde {ic = 10 wAde, Ip = 0) Emitter-Base Breakdown Voltage V(BRIEBO 5.0 - - Vde (ig = 10 wAde, Ic = 0} Collector Cutoff Current IcBo - - 100 nAdc (Vcp = 30 Vdc, Ip = 9} ON CHARACTERISTICS(2) DC Current Gain RFE {ic = 100 wAdc, Voce = 10 Vde) 30 110 - (ic = 1.0 mAdc, Vcg = 10 Vdc) 30 130 - lig = 10 mAde, Veg = 10 Vde) 30 75 - ; (ip = 50 mAde, Vce = 10 Vdc} 15 25 MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-101MOTOROLA SC IXSTRS/R FF 4b DE Beaezesu n06476 4 i 6367254 M & MOTOROLA SC CXSTRS/R F) 86D 82476 DB MD7007,A,B,F,BF, MQ7007 T-aa-at ELECTRICAL CHARACTERISTICS (continued) (Ta = 25C untess otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage VcE(sat) _ 0.38 1.0 Vde (Ic = 50 mAde, Ig = 5.0 mAdc) Base-Emitter Saturation Voltage VBE(sat} - 0.9 1.5 Vde {l = 50 mAdg, Ig = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain Bandwidth Product(2) fT 300 600 _ MHz {Ic = 10 mAde, VcE = 10 Vde, f = 100 MHz) Output Capacitance Cobo _ 4.0 8.0 pF {Vcp = 10 Vdc, Ig = 0, f = 100 kHz) . Input Capacitance Cibo _ 3.8 10 pF (VBE = 2.0 Vde, Ic = 0, f = 100 kHz) MATCHING CHARACTERISTICS DC Current Gain Ratio(3) hreq/hre2 _ (lc = 1.0 mAdc, VcE = 10 Vdc) MD7007A 0.75 _ 1.0 MD7007B 0.85 _ 1.0 Base-Emitter Voltage Differential \VBE1-Veeal mVde (lc = 1.0 mAdc, Veg = 10 Vdc) MD7007A _ 20 MD70078 _ _ 10 (2) Pulse Test: Pulse Width < 300 ys, Duty Cycle = 2.0%. (3) The lowest hre reading is taken as hrey for this ratio. MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 5-102