GATE CONTROLLED DEVICE - Insulated Gate Bi-polar Transistor Diodes - Capsule Type
VRRM VRSM
Range IF(AV) T
sink
= 55oC
IF(d.c.)
at
Tsink = 25o
C
IF(RSM) Tsink
= 25oCIFSM 10ms
VRM = 0.6RRM
IFSM2 10ms
VRM ≤≤10V I2t 10ms
VRM ≤≤10V IRRM VorsWt
(Typ) Mounting
Force Outline
No.
(Note 1)
(Note 2)
(Note 4)
(Note 2)
(Note 5)
(Note 5)
(Note 5)
(V) (A) (A) (A) (A) (A) (A2s) (mA) (V) (mΩΩ)(V) (A)
DSC
(K/W)
SSC
(K/W)
(g) (kN)
F0040BC18 YF0400LC180 1800 775 1304 1545 7630 8400 353 x 103150 1.1494 0.692 2.88 400 0.032 0.064 340 10.0 - 20.0 100A243
F0140NC18 YF1400NC180 1800 1093 1359 2206 17250 1900 1.81 x 106275 1.618 0.388 2.46 1400 0.024 0.048 510 19.0 - 26.0 100A249
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Limited. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Note 1 De-rating factor of 0.13% per degree centigrade is applicable for T
j
below 25
o
C
Note 2 Double side cooled, single phase; 50Hz, 180o half-sinewave
Note 3 Single side cooled, single phase; 50Hz, 180o half-sinewave
Note 4 Double side cooled
Note 5 Half-sinewave, 125
o
C T
j
initial
Note 6 Current (I
F
) ratings have been calculated using V
o
and r
VFM at IFM @ Tj
Max.
Old Part
Number
PDF Data
Sheet
Available
New Part Number
Rth(j-hs)