Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS(on) = 0.75 300 ns trr D G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M 1200 V VGS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Chip capability 20 A IDM TC = 25C, pulse width limited by TJM 80 A IAR TC = 25C 10 A EAR EAS TC = 25C TC = 25C 40 2 mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 5 V/ns PD TC= 25C 780 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL 1 mA Md Mounting torque Terminal connection torque t = 1 min t=1s 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight Symbol 30 Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 1200 VGH(th) VDS = VGS, ID = 8 mA 2.5 IGSS VGS = 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved g TJ = 25C TJ = 125C V 4.5 V 100 nA 100 2 A mA 0.75 miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard package * miniBLOC, with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * * * * Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages * Easy to mount * * Space savings High power density DS99116(11/03) IXFN 20N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 * ID25, pulse test 15 27 S 7400 pF 560 pF Crss 100 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 45 ns td(off) RG = 1 (External), 75 ns 20 ns tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 160 nC 35 nC 60 nC RthJC 0.16 RthCK 0.05 Source-Drain Diode K/W K/W miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V t rr QRM IRM IF = IS, -di/dt = 100 A/s, VR = 100 V 300 ns C A 1.4 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFN 20N120 Fig. 1. Output Characteristics @ 25 deg. C Fig. 2. Output Characteristics @ 125 Deg. C 22 35 VGS = 10V 6V 30 18 16 5V I D - Amperes I D - Amperes 25 VGS = 10V 5V 20 20 15 10 14 12 10 8 6 4V 4 5 4V 2 0 0 0 5 10 15 20 25 0 30 5 10 V D S - Volts 15 20 25 30 35 40 V D S - Volts Fig. 3. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature Fig. 4. RDS(on) Norm alized to ID25 Value vs. ID 2.6 2.8 2.6 VGS = 10V VGS = 10V 2.4 2.2 2 R D S (on) - Normalized R D S (on) - Normalized 2.4 I D = 20A 1.8 1.6 I D = 10A 1.4 1.2 1 2.2 TJ = 125C 2 1.8 1.6 1.4 TJ = 25C 1.2 0.8 1 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 0 150 5 10 15 20 25 30 35 I D - Amperes TJ - Degrees Centigrade Fig. 5. Drain Current vs. Case Tem perature Fig. 6. Input Adm ittance 30 24 22 25 20 16 I D - Amperes I D - Amperes 18 14 12 10 8 20 15 TJ = 125C 25C -40C 10 6 4 5 2 0 0 -50 -25 0 25 50 75 100 TC - Degrees Centigrade (c) 2003 IXYS All rights reserved 125 150 3 3.5 4 4.5 V G S - Volts 5 5.5 IXFN 20N120 Fig. 8. Source Current vs. Source-To-Drain Voltage Fig. 7. Transconductance 55 70 50 60 45 50 TJ = -40C 25C 125C 35 30 I S - Amperes g f s - Siemens 40 25 20 40 30 TJ = 125C 20 15 10 TJ = 25C 10 5 0 0 0 5 10 15 20 25 30 35 0.4 0.6 0.8 I D - Amperes Fig. 9. Gate Charge 1.2 1.4 Fig. 10. Capacitance 10 10000 VDS = 600V I D = 10A I G = 10mA 9 Ciss Capacitance - pF 8 7 VG S - Volts 1 V S D - Volts 6 5 4 3 1000 Coss 100 Crss 2 f = 1MHz 1 10 0 0 20 40 60 80 100 120 140 160 0 5 10 Q G - nanoCoulombs 15 20 25 30 35 40 V D S - Volts Fig. 11. Maxim um Transient Therm al Resistance 0.18 0.16 R (th) J C - (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 1 10 Pulse Width - milliseconds 100 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505