© 2003 IXYS All rights reserved
Features
•International standard package
•miniBLOC, with Aluminium nitride
isolation
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Easy to mount
•Space savings
•High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 1200 V
VGH(th) VDS = VGS, ID = 8 mA 2.5 4.5 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 0.75 Ω
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1200 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C, Chip capability 20 A
IDM TC= 25°C, pulse width limited by TJM 80 A
IAR TC= 25°C10A
EAR TC= 25°C40mJ
EAS TC= 25°C2J
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PD TC= 25°C 780 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
DS99116(11/03)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
IXFN 20N120 VDSS = 1200 V
ID25 = 20 A
RDS(on) = 0.75 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 300 ns
Advanced Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXFN 20N120
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 15 27 S
Ciss 7400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 560 pF
Crss 100 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 ns
td(off) RG = 1 Ω (External), 75 n s
tf20 ns
Qg(on) 160 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 35 nC
Qgd 60 nC
RthJC 0.16 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 20 A
ISM Repetitive; 80 A
pulse width limited by TJM
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 300 ns
QRM 1.4 µC
IRM 8A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
© 2003 IXYS All rights reserved
IXFN 20N120
Fig. 1. Output Characteristics
@ 25 deg. C
0
5
10
15
20
25
30
35
0 5 10 15 20 25 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
6V
4V
5V
Fig. 2. Output Characte ristics
@ 125 Deg. C
0
2
4
6
8
10
12
14
16
18
20
22
0 5 10 15 20 25 30 35 40
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
5V
4V
Fig. 3. R
DS (on)
Norm alized to I
D25
V
alue vs.
Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S (on)
- Normalize
d
I
D
= 20A
I
D
= 10A
V
GS
= 10V
Fig. 6. Input Adm ittance
0
5
10
15
20
25
30
33.5 44.5 55.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 5. Drain Current vs. Case
Temperature
0
2
4
6
8
10
12
14
16
18
20
22
24
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig . 4. R
DS(on)
Norm alized to I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 5 10 15 20 25 30 35
I
D
- Amperes
R
D S (on)
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
IXFN 20N120
Fig. 10. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - pF
C
iss
C
oss
C
rss
f = 1MHz
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 600V
I
D
= 10A
I
G
= 10mA
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30 35
I
D
- Amperes
g f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Source Current vs.
Source-To-Drain Voltage
0
10
20
30
40
50
60
70
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Maxim um Transient Therm al Resistance
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
