R1RW0408DGE-2LR - Renesas Electronics

To our custo mers,

Old Company Name in Catalogs and Other Documents

On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corpor ation took over all the business of both

companies. Therefore, althoug h the old com pany name remains in this docum ent, it is a valid

Renesas Electronics document. W e appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

Notice

1. All information included in this document is current as of the date this document is issued. Such information, however, is

subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please

confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights

of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.

No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights

of Renesas Electronics or others.

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expressly specified in a Renesas Electronics data sheets or data books, et c.

“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual

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“Specific”: Aircraft; aerospace equ i pment; submersible repeaters; nu clear reactor control systems; medical equipment or

systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare

interven tion (e.g. excision, et c.), and any oth er applications or purposes that pose a direct th reat to human life.

8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,

especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation

characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or

damages arising out of the use of Renesas Electronics products beyond such specified ranges.

9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have

specific chara cterist ics such as the o ccurren ce of failure at a certai n rate an d malfunct ion s under certai n u se cond ition s. Further,

Renesas Electronics pr oducts are not subject to radiation resi stance design. Please be sure to implement safety measures to

guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a

Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire

control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because

the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system

manufactured by you.

10. Please contact a Renesas Electronics sales office for det ai ls as to enviro nmental matters such as the en vi ronmental

compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable

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Electronics.

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(Note 1) “Renesas Electronics” as us ed in this document means Renesas Electronics Corporation and also includes its majo ri ty-

owned subsidiaries.

(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

Rev.1.00, Mar.12.2004, page 1 of 12

R1RW0408D Series

4M High Speed SRAM (512-kword × 8-bit)

REJ03C0111-0200

Rev. 2.00

Dec.1.2008

Description

The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high

speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit

designing technology. It is most appropriate for the application which requires high speed, high density

memory and wide bit width configuration, such as cache and buffer memory in system. The

R1RW0408 D is p ackaged in 400-mil 36-pin SOJ for high density surface mounting.

Features

• Single supply: 3.3 V ± 0.3 V

• Access time: 10 ns /12 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current: 115mA/ 100mA (max)

• TTL standby current: 40 mA (max)

• CMOS standby current : 5 mA (max)

: 0.8 mA (max) (L-version)

• Data retention current: 0.4 mA (max) (L-version)

• Data retention voltage: 2 V (min) (L-version)

• Center VCC and VSS type pin out

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 2 of 12

Ordering Information

Type No. Access time Package

R1RW0408DGE-0PR 10 ns

R1RW0408DGE-2PR 12 ns 400-mil 36-pin plastic SOJ (36P0K)

R1RW0408DGE-2LR 12 ns

Pin Arrangement

CS#

I/O1

I/O2

I/O3

I/O4

WE#

A18

A17

A16

A15

OE#

I/O8

I/O7

I/O6

I/O5

A14

A13

A12

A11

A10

(Top View)

36-pin SOJ

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 3 of 12

Pin Description

Pin name Function

A0 to A18 Address input

I/O1 to I/O8 Data input/output

CS# Chip select

OE# Output enable

WE# Write enable

VCC Power supply

VSS Ground

NC No connection

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 4 of 12

Block Diagram

I/O1

I/O8

WE#

Input

data

control

Column I/O

Column decoder

1024-row × 32-column ×

16-block × 8-bit

(4,194,304 bits)

Row

decoder

OE#

CS#

A14

A13

A12

A11

A10

A8 A9 A18 A16 A17 A0 A2 A4 A15

(LSB) (MSB)

(LSB)

(MSB)

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 5 of 12

Operation Table

CS# OE# WE# Mode VCC current I/O Ref. cycle

H × × Standby ISB, ISB1 High-Z 

L H H Output disable ICC High-Z 

L L H Read ICC D

OUT Read cycle (1) to (3)

L H L Write ICC D

IN Write cycle (1)

L L L Write ICC D

IN Write cycle (2)

Note: H: VIH, L: VIL, ×: VIH or VIL

Absolute Maximum Ratings

Parameter Symbol Value Unit

Supply voltage relative to VSS V

CC −0.5 to +4.6 V

Voltage on any pin relative to VSS V

T −0.5*1 to VCC + 0.5*2 V

Power dissipation PT 1.0 W

Operating temperature Topr 0 to +70 °C

Storage temperature Tstg −55 to +125 °C

Storage temperature under bias Tbias −10 to +85 °C

Notes: 1. VT (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns.

2. VT (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.

Recommended DC Operating Conditions

(Ta = 0 to +70°C)

Parameter Symbol Min Typ Max Unit

Supply voltage VCC*3 3.0 3.3 3.6 V

SS*4 0 0 0 V

Input voltage VIH 2.0  V

CC + 0.5*2 V

IL −0.5*1  0.8 V

Notes: 1. VIL (min) = −2.0 V for pulse width (under shoot) ≤ 6 ns.

2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.

3. The supply voltage with all VCC pins must be on the same level.

4. The supply voltage w i th al l VSS pins must be on the same level.

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 6 of 12

DC Char ac ter istics

(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter Symbol Min Max Unit Test conditions

Input leakage current IILII  2 µA VIN = VSS to VCC

Output leakage current IILOI  2 µA VIN = VSS to VCC

10ns cycle ICC  115 mA Operation power supply

current 12ns cycle ICC  100 mA

Min cycle

CS# = VIL, lOUT = 0 mA

Other inputs = VIH/VIL

Standby power supply current ISB  40 mA Min cycle

CS# = VIH,

Other inputs = VIH/VIL

SB1  5 mA f = 0 MHz

VCC ≥ CS# ≥ VCC − 0.2 V,

(1) 0 V ≤ VIN ≤ 0.2 V or

(2) VCC ≥ VIN ≥ VCC − 0.2 V

*1 0.8*1 mA

Output voltage VOL  0.4 V IOL = 8 mA

OH 2.4  V IOH = −4 mA

Note: 1. This characteristics is guaranteed only for L-version.

Capacitance

(Ta = +25°C, f = 1.0 MHz)

Parameter Symbol Min Max Unit Test conditions

Input capacitance*1 C

IN  6 pF VIN = 0 V

Input/output capacitance*1 C

I/O  8 pF VI/O = 0 V

Note: 1. This parameter is sampled and not 100% tested.

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 7 of 12

AC Char ac ter istics

(Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, unless otherwise noted.)

Test Conditions

• Input pulse levels: 3.0 V/0.0 V

• Input rise and fall time: 3 ns

• Input and outpu t timing reference levels: 1.5 V

• Output load: See figures (Including scope and jig)

DOUT

353Ω

319Ω

3.3 V

5 pF

Output load (B)

(for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW)

Output load (A)

1.5 V

30 pF

DOUT

RL=50 Ω

Zo=50 Ω

Read Cycle

R1RW0408D

10ns Version 12ns Version

Parameter Symbol Min Max Min Max Unit Notes

Read cycle time tRC 10  12  ns

Address access time tAA  10  12 ns

Chip select access time tACS  10  12 ns

Output enable to output valid tOE  5  6 ns

Output hold from address change tOH 3  3  ns

Chip select to output in low-Z tCLZ 3  3  ns 1

Output enable to output in low-Z tOLZ 0  0  ns 1

Chip deselect to output in high-Z tCHZ  5  6 ns 1

Output disable to output in high-Z tOHZ  5  6 ns 1

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 8 of 12

Write Cycle

R1RW0408D

10ns Version 12ns Version

Parameter Symbol Min Max Min Max Unit Notes

Write cycle time tWC 10  12  ns

Address valid to end of write tAW 7  8  ns

Chip select to end of write tCW 7  8  ns 9

Write pulse width tWP 7  8  ns 8

Address setu p time tAS 0  0  ns 6

Write recovery time tWR 0  0  ns 7

Data to write time overlap tDW 5  6  ns

Data hold from write time tDH 0  0  ns

Write disable to output in low-Z tOW 3  3  ns 1

Output disable to output in high-Z tOHZ  5  6 ns 1

Write enable to output in high-Z tWHZ  5  6 ns 1

Notes: 1. Transition is measured ±200 mV from steady voltage with output load (B). This parameter is

sampled and not 100% tested.

2. Address should be valid prior to or coincident with CS# transition low.

3. WE# and/or CS# must be high during address transition time.

4. If CS# and OE# are low during this period, I/O pins are in the output state. T hen, the data input

signals of opposite phase to the outputs must not be applied to them.

5. If the CS# low transition occurs simultaneously with the WE# low transition or after the WE#

transition, output remains a high impedance state.

6. tAS is measured from the latest address transition to the later of CS# or WE# going low.

7. tWR is measured from the earlier of CS# or WE# going high to the first address transition.

8. A write occurs during the overlap of a low CS# and a low WE#. A write begins at the latest

transition among CS# going low and WE# going low. A write ends at the earliest transition

among CS# going high and WE# going high. tWP is measured from the beginning of write to the

end of write.

9. tCW is measured from the later of CS# going low to the end of write.

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 9 of 12

Timing Waveforms

Read Timing Wavefo rm (1) (WE# = VIH)

tAA

tACS

tRC

tOE

tCLZ

Valid data

Address

CS#

DOUT

Valid address

High impedance

tOHZ

OE#

tOH

tCHZ

tOLZ

Read Timing Wavefo rm (2) (WE# = VIH, CS# = VIL, OE# = VIL)

Valid data

Address

OUT

Valid address

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 10 of 12

Read Timing Wavefo rm (3) (WE# = VIH, CS# = VIL, OE# = VIL)*2

Valid data

CS#

OUT

High

impedance

High

impedance

CLZ

ACS

CHZ

Write Timing Waveform (1) (WE# Controlled)

Address

WE#*3

DOUT

DIN

tWC

tWP

tWR

tCW

tDW tDH

Valid address

tAW

Valid data

tAS

CS#*3

tOHZ

*4*4

OE#

High impedance*5

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 11 of 12

Write Timing Waveform (2) (CS# Controlled)

Address

WE# *3

DOUT

DIN

tWC

tWP

tWR

tCW

tDW tDH

Valid address

tAW

Valid data

tAS

CS# *3

tWHZ tOW

*4*4

High impedance*5

R1RW0408D S er i e s

REJ03C0111-0200 Rev.2.00,

Dec.1.2008, page 12 of 12

Low VCC Data Retention Characteristics

(Ta = 0 to +70°C)

This characteristics is guaranteed only for L-version.

Parameter Symbol Min Max Unit Test conditions

VCC for data retention VDR 2.0  V VCC ≥ CS# ≥ VCC − 0.2 V

(1) 0 V ≤ VIN ≤ 0.2 V or

(2) VCC ≥ VIN ≥ VCC − 0.2 V

Data retention current ICCDR  400 µA VCC = 3 V, VCC ≥ CS# ≥ VCC − 0.2 V

(1) 0 V ≤ VIN ≤ 0.2 V or

(2) VCC ≥ VIN ≥ VCC − 0.2 V

Chip deselect to data

retention time tCDR 0  ns See retention waveform

Operation recovery time tR 5  ms

Low VCC Data Rete ntion Timing Waveform

3.0 V

0 V

CS#

CDR

≥ CS# ≥ V

− 0.2 V

2.0 V

Data retention mode

Revision History R1RW0408D Series Data Sheet

Contents of Modification Rev. Date

Page Description

0.01 Sep. 30, 2003  Initial issue

1.00 Mar.12.2004  Deletion of Preliminary

2.00 Dec.01.2008 

P8/P9

Part Number 10ns Version Adding

Features Access time 10ns and operating current 115mA adding

Order Information Type No R1RW0408DGE-0PRAdding

DC Characteristics Operating power supply current 10ns parame ter addin g

AC Characteristics Read ,Write parameter 10ns parameter adding

Notes:

1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes

warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property

rights or any other rights of Renesas or any third party with respect to the information in this document.

2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,

but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.

3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass

destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws

and regulations, and procedures required by such laws and regulations.

4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this

document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,

please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be

disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )

5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a

result of errors or omissions in the information included in this document.

6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability

of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular

application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.

7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications

or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality

and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or

undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall

have no liability for damages arising out of the uses set forth above.

8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:

(1) artificial life support devices or systems

(2) surgical implantations

(3) healthcare intervention (e.g., excision, administration of medication, etc.)

(4) any other purposes that pose a direct threat to human life

Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing

applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all

damages arising out of such applications.

9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,

movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages

arising out of the use of Renesas products beyond such specified ranges.

10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain

rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage

caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and

malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software

alone is very difficult, please evaluate the safety of the final products or system manufactured by you.

11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as

swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.

Renesas shall have no liability for damages arising out of such detachment.

12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.

13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have

any other inquiries.

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

http://www.renesas.com

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

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Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

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Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399

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Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145

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Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: <603> 7955-9390, Fax: <603> 7955-9510

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