Wonterere eet hermehveamanem wt pemmennetrtetanotinmttintminriinnn SAH Minty Hal dA SAMSUNG SEMICONDUCTOR INC LUE D B eacunya 0007342 4 MPS8599 PNP EPITAXIAL SILICON TRANSISTOR . 7-29-21 AMPLIFIER TRANSISTOR Collector-Emitter Voltage: Voeo =80V T0-92 Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (T. =25C) Characteristic Symbol Rating Unit Collectar-Base Voltage Veso 80 v Coltector-Emitter Voltage Veo 80 v Emitter-Base Voltage Veso 5 v Collector Current Ie 500 mA Collector Dissipation Pc 625 mw Junction Temperature Tj 150 C Storage Temperature Tstg ~55 150 0} Refer to MPS8598 for graphs i. Emitter 2. Base 3, Collector ELECTRICAL CHARACTERISTICS (Ta =25C) 4 Characteristic Symbol Test Conditions Min Tp Max Unit *Collector-Emitter Breakdown Voltage BV ceo Ic =10mA, Ip =0 80 Vv Collector-Base Breakdown Voltage BVceo Ig =100pA, le =O 80 Vv Emitter-Base Breakdown Voltage BVeso Te =10pA, Ic =O 5 Vv Collector Cut-off Current Iceo Vee =60V, Ip =0 100 nA Collector Cut-off Current Iceo Vp =80V, le =0 100- nA Emitter Cut-off Current leso Vee =4V, Io =0 100 nA *DC Current Gain re Io = IMA, Vee =5V 100 300 Ig =10MA, Voce =5V 100 le =100mA, Vee =5V 75 *Collector-Emitter Saturation Voltage Vee (sat) le =100mA, Ip =5mA 0.4. Vv tc =100mA, Ip =10mMA 0.3 Vv *Base-Emitter On Voltage Vae (on) fo =10mA, Vce=5V 0.6 0.8 Vv Current Gain Bandwidth Product fr tg =10MA, Voce =5V 150 MHz t=100MHz Output Capacitance Cob Vee =5V; le =0 8 pF . | fStMHz Pulse Test: Pulse Width = 300us, Duty Cycle = 2% be SAMSUNG SEMICONDUCTOR 612