Type IPP041N04N G
IPB041N04N G
!"#$%!&™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C 80 A
VGS=10 V, TC=100 °C 80
Pulsed drain current2) ID,pulse TC=25 °C 400
Avalanche current, single pulse3) IAS TC=25 °C 80
Avalanche energy, single pulse EAS ID=80 A, RGS=25 W60 mJ
Gate source voltage VGS ±20 V
Value
1) J-STD20 and JESD22
VDS 40 V
RDS(on),max 4.1 mW
ID80 A
Product Summary
Type IPB041N04N G IPP041N04N G
Package PG-TO263-3 PG-TO220-3
Marking 041N04N 041N04N
Rev. 1.2 page 1 2009-12-17
IPP041N04N G
IPB041N04N G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 94 W
Operating and storage temperature Tj,Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 1.6 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm² cooling area4) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=45 µA 2 - 4
Zero gate voltage drain current IDSS VDS=40 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=40 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA
Drain-source on-state resistance5) RDS(on) VGS=10 V, ID=80 A - 3.3 4.1 mW
Gate resistance RG- 1.6 - W
Transconductance gfs |VDS|>2|ID|RDS(on)max,
ID=80 A 50 100 - S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5) Measured from drain tab to source pin
3) See figure 13 for more detailed information
Value
Values
2) See figure 3 for more detailed information
Rev. 1.2 page 2 2009-12-17
IPP041N04N G
IPB041N04N G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 3400 4500 pF
Output capacitance Coss - 980 1300
Reverse transfer capacitance Crss - 36 -
Turn-on delay time td(on) - 16 - ns
Rise time tr- 3.8 -
Turn-off delay time td(off) - 23 -
Fall time tf- 4.8 -
Gate Charge Characteristics
6)
Gate to source charge Qgs - 18 - nC
Gate charge at threshold Qg(th) - 10.3 -
Gate to drain charge Qgd - 5.3 -
Switching charge Qsw - 12.5 -
Gate charge total Qg- 42 56
Gate plateau voltage Vplateau - 5.1 - V
Gate charge total, sync. FET Qg(sync) VDS=0.1 V,
VGS=0 to 10 V - 40 - nC
Output charge Qoss VDD=20 V, VGS=0 V - 41 -
Reverse Diode
Diode continuous forward current IS- - 78 A
Diode pulse current IS,pulse - - 400
Diode forward voltage VSD VGS=0 V, IF=80 A,
Tj=25 °C - 0.96 1.2 V
Reverse recovery charge Qrr VR=20 V, IF=IS,
diF/dt=400 A/µs - 46 - nC
6) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=20 V,
f=1 MHz
VDD=20 V, VGS=10 V,
ID=30 A, RG=1.6 W
VDD=20 V, ID=30 A,
VGS=0 to 10 V
Rev. 1.2 page 3 2009-12-17
IPP041N04N G
IPB041N04N G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS!10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-1
100
101
102
103
VDS [V]
ID[A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
20
40
60
80
100
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC[°C]
ID[A]
Rev. 1.2 page 4 2009-12-17
IPP041N04N G
IPB041N04N G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
5.5 V
6 V 6.5 V
7 V
10 V
0
1
2
3
4
5
6
7
8
0 40 80 120 160 200
ID[A]
RDS(on) [mW
W
W
W]
25 °C
175 °C
0
50
100
150
200
250
300
0 2 4 6 8
VGS [V]
ID[A]
0
20
40
60
80
100
120
0 20 40 60 80 100
ID[A]
gfs [S]
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
50
100
150
200
250
300
0 1 2 3
VDS [V]
ID[A]
Rev. 1.2 page 5 2009-12-17
IPP041N04N G
IPB041N04N G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=80 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS;ID=250 mA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
1
2
3
4
5
6
7
8
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW
W
W
W]
0
1
2
3
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
101
0 10 20 30 40
VDS [V]
C[pF]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
1
10
100
1000
0 0.5 1 1.5 2
VSD [V]
IF[A]
Rev. 1.2 page 6 2009-12-17
IPP041N04N G
IPB041N04N G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
25
30
35
40
45
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
150 °C
103
102
101
100
10-1
1
10
100
tAV [µs]
IAV [A]
8 V
20 V
32 V
0
2
4
6
8
10
12
0 10 20 30 40 50
Qgate [nC]
VGS [V]
Rev. 1.2 page 7 2009-12-17
IPP041N04N G
IPB041N04N G
Package Outline PG-TO220-3-1
Footprint: Packaging:
Rev. 1.2 page 8 2009-12-17
IPP041N04N G
IPB041N04N G
Package Outline PG-TO263-3
Rev. 1.2 page 9 2009-12-17
IPP041N04N G
IPB041N04N G
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Rev. 1.2 page 10 2009-12-17
