TLP360J
1 2005-01-24
TOSHIBA Photocoupler GaAs IRED & PHOTO-TRIAC
TLP360J
Triac Drivers
Programmable Controllers
AC-Output Modules
Solid State Relays
The TOSHIBA TLP360J consists of a photo-triac optically coupled to a
gallium-arsenide infrared-emitting diode in a four-lead plastic DIP package.
• Peak Off-State Voltage
: 600 V (Min)
• Trigger LED Current
: 10 mA (Max)
• On-State Current
: 100 mA (Max)
• Isolation Voltage : 5000 Vrms (Min)
• UL-Recognized :UL1577, file No. E67349
• Option (D4) type
TÜV approved :DIN EN60747-5-2
Certificate No. R50033433
Maximum Operating Insulation Voltage :890 Vpk
Maximum Permissible Overvoltage
:8000 Vpk
(Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).”
• Construction Mechanical Rating
7.62 mm pitch
standard type
10.16 mm pitch
TLPXXXF type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.4 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.4 mm (Min)
•Trigger LED Current
*Example: “(IFT7)”; “TLP360J(IFT7)”
(Note) When specifying the application type name for certification testing, be sure to use the standard product type
name, e.g., TLP360J(IFT7): TLP360J.
JEDEC
TOSHIBA 11-5B2
Weight: 0.26 g
Trigger LED Current (mA)
V
T
= 6 V, Ta = 25°C
Classi−
fication* Min. Max.
Marking of
Classification
(IFT7) 7 T7
Standard 10 T7, blank
Unit: mm
PIN CONFIG URATION (TOP VIEW)
1: ANODE
2: CATHODE
3: TERMINAL1
4: TERMINAL2
1
23
4
Tentative
TLP360J
2 2005-01-24
Maximum Ratings
(Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current I
F
50 mA
Forward Current Derating (Ta 53°C) I
F
/°C 0.7 mA /°C
Peak Forward Current (100 µs pulse, 100 pps) I
FP
1 A
Reverse Voltage V
R
5 V
LED
Junction Temperature T
j
125 °C
Off-State Output Terminal Voltage V
DRM
600 V
Ta = 25°C 100
On-State RMS Current
Ta = 70°C
I
T(RMS)
50
mA
On-State Current Derating (Ta 25°C) I
T
/°C -1.1 mA /°C
Peak On-State Current (100 µs pulse, 120 pps) I
TP
2 A
Peak Nonrepetitive Surge Current (Pw = 10 ms, DC = 10%) I
TSM
1.2 A
DETECTOR
Junction Temperature T
j
115 °C
Storage Temperature Range T
stg
55~125 °C
Operating Temperature Range T
opr
40~100 °C
Lead Soldering Temperature (10 s) T
sol
260 °C
Isolation Voltage (AC, 1 min., R.H. 60%) (Note 1) BV
S
5000 Vrms
(Note 1): Pins 1 and 2 are shorted together and pins 3 and 4 are shorted together.
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage V
AC
— —
240 V
ac
Forward Current I
F
15 20 25 mA
Peak On-State Current I
TP
— —
1 A
Operating Temperature T
opr
25 — 85 °C
TLP360J
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Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse Current I
R
V
R
= 5 V
— —
10 µA
LED
Capacitance C
T
V = 0, f = 1 MHz
—
30
—
pF
Peak Off-State Current I
DRM
V
DRM
= 600 V
—
10 1000 nA
Peak On-State Voltage V
TM
I
TM
= 100 mA
—
1.7 3.0 V
Holding Current I
H
— —
0.6
—
mA
Critical Rate of Rise of
Off-State Voltage dv/dt Vin = 240 Vrms , Ta = 85°C (Note 2)
—
500
—
V/µs
DETECTOR
Critical Rate of Rise of
Commutating Voltage dv/dt(c)
Vin = 60 Vrms , I
T
= 15 mA (Note 2)
—
0.2
—
V/µs
Coupled Electrical Characteristics
(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Trigger LED Current I
FT
V
T
= 6 V
— —
10 mA
Turn-on Time t
ON
V
D
= 6 4 V , R
L
= 100 Ω
I
F
= Rated I
FT
1.5
—
30 100 µs
Isolation Characteristics
(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Capacitance (Input to Output) C
S
V
S
= 0 , f = 1 MHz
—
0.8
—
pF
Isolation Resistance R
S
V
S
= 500 V, R.H. 60% 1×10
12
10
14
—
Ω
AC, 1 minute 5000
— —
AC, 1 second, in oil
—
10000
—
Vrms
Isolation Voltage BV
S
DC, 1 minute, in oil
—
10000
—
Vdc
(Note 2): dv/dt TEST CIRCUIT
dv/dt (c)
dv/dt
0V
+5 V, Vcc
1
2
4
Vcc
+
—
Rin
120 Ω
Vin
3
R
L
4kΩ
TLP360J
4 2005-01-24
*: The above graphs show typical characteristics.
V
F
/ Ta – I
F
Forward current I
F
(mA)
Forward voltage temperature
coefficient VF / Ta (mV / °C)
−3.2
−0.4
0.1 0.3 0.5 1 3 5 10 30 50
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
Ambient temperature Ta (A)
Allowable forward current
IF (mA)
60
0
20
50
40
30
20
0 20 40 60 80 120 100
10
I
T(RMS)
– Ta
Ambient temperature Ta (°C)
R.m.s on-stage current
IT(RMS) (mA)
120
0
-20
100
80
40
20
0 20 40 60 80 120 100
60
I
FP
– V
FP
Pulse forward voltage V
PF
(V)
Pulse forward current I
FP
(mA)
0.6
1000
1
500
300
30
10
3
1.0 1.4 1.8 2.2 2.6
5
50
100
3.0
Pulse width 100µs
Repetitive frequency
= 100 Hz
Ta = 25°C
I
FP
– D
R
Duty cycle ratio D
R
Allowable pulse forward
current I
FP
(mA)
3000
10
3
1000
500
300
100
50
10 10
2
10
1
10
０
3 3 3 3
30
Pulse width 100µs
Ta = 25°C
I
F
– V
F
Forward voltage V
F
(V)
Forward current I
F
(mA)
100
0.1
0.6
50
30
3
1
0.3
0.8 1.0 1.2 1.4 1.6 1.8
0.5
5
10
Ta = 25°C
I
F
– Ta
TLP360J
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*: The above graphs show typical characteristics.
Normalized I
FT
– Ta
Ambient temperature Ta (°C)
Trigger LED current IFT
(Arbitrary unit)
3
0.1
40
1.2
1
0.5
0.3
-20 0 20 40 60 100 80
2
VT = 6 V
Normalized I
H
– Ta
Ambient temperature Ta (°C)
Holding current IH
(Arbitrary unit)
3
0.1
-40
1.2
1
0.5
0.3
-20 0 20 40 60 100 80
2
Normalized I
DRM
– Ta
Ambient temperature Ta (°C)
Peak off-state current IDRM
(Arbitrary unit)
10
3
10
2
10
1
10
０
40 100 0 20 60 80
VDRM = Rated
Normalized V
DRM
– Ta
Ambient temperature Ta (°C)
Off-stage output terminal voltage VDRM
(arbitrary unit)
1.4
0.2
-40
1.0
0.8
0.4
-20 0 20 40 60 100 80
1.2
0.4
0.6
Normalized I
F
/ I
FT
– P
w
Normalized LED current IF / IFT
10
1
1.6
2
3
5
1.2
10 30 100 300 500 100050
1.4
1.8
TLP360J
6 2005-01-24
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human bo
030619EBC
RESTRICTIONS O N PRODUCT USE
