TELEDYNE COMPONENTS ease D mm 8917602 OOOb4S4 9 ome TOPAZ SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION FEATURES @ Normally ON Configuration Hf Low Interelectrode Capacitances @ High-Speed Switching i Wide Dynamic Range T-4g-25- $D5501 Sorted Chips in Waffle Pack SD5501CHP 16-Pin Ceramic Duat In-Line Package Sbss0td 16-Pin Plastic Dual In-Line Package SD5501N Description 20V, 1562 APPLICATIONS @ High-Speed Analog Switches @ Wide-Band Dual Differential Amplifiers @ Dual Cascode Amplifiers @ High Intercept Point Double Balanced Mixers ABSOLUTE MAXIMUM RATINGS (per channel, Ta = +25C unless otherwise noted) Vos Drain-Source Voltage ...........005 +30Vde Pp Total Package Power Dissipation Vgp Source-Drain Voltage ............. +0.5Vde (at orbelow Ta = +25C)........... 640mW Vos Drain-Body Voltage .............4.. +30Vde Linear Derating Factor.......... 10.7mW/! C Vspe Source-Body Voltage ..........0006 +15Vde Pp Single Device Power Dissipation Vas Gate-Source Voltage ........... see +25Vdo (at or below Ta = +25C)........4.. 300mW Vap Gate-Body Voltage ........000cc0ee +25Vde Linear Derating Factor........... 5,.0mW/ C Gata-Body Voltage ................ -0.3Vde T} Operating Junction Temperature Vap Gate-Drain Voltage ................ +28Vdc Range oo. eee ceeeiesevaeeeee 55 to +85C Ip Continuous Drain Current ............ 50MA Tg Storage Temperature Range .. 55 to + 180C SCHEMATIC DIAGRAM CHIP CONFIGURATION PIN CONFIGURATION trons = 10-00-05 tOmnny 10-0 008 nOmm4 HOme4 rm Package Pin-out oF f Bo, oH of bh, | ee 10-9 O01 rod fon | seh Pakgaen Toon Dimensions: .041 x .033 x .013 inches | o PAD PAO PAD PAD wo-o'S-on woT Fon NO. FUNCTION NO. FUNCTION TOP VIEW : 1 Gate No. 1 7 Gate No. 3 DIMENSIONS 2 Source No. t 8 Source No. 3 9 3 SourceNo.2-8= SourcaNo.4 | 16-Pin Plastic DIP Westman 4 Gate No. 2 10 Gate No. 4 See Package 10 5 Orain No. 2 1 Brain No, 4 Note: Pin numbera carreapand to 8 Crain No. 3 12 Drain No, 1 16-Pin Ceramic DIP See Package 15 4255 c-08 3-121 0-88-6 TELEDYNE COMPONENTS 24 D M@M@ 91760c OOOL4SS 0 -Yo - OVA Z 748 ooo SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (per channel, Ta = +25C, unless otherwise noted) # CHARACTERISTIC MIN | TYP | MAX |UNITS TEST CONDITIONS 1 BVes Drain-Source 20 Ib = 101A, Ves = Vas = -5V Breakdown Voltage 2 BVso Source-Drain 10 Is = 10NA, Veo = Van = -5V Breakdown Voltage V 3 BVps ODrain-Body 25 lp = 10nA, Ves = 0 Breakdown Voltage Source Open 4 BVss Source-Body 15 Is = 104A, Ves = 0 Breakdown Voltage Drain open 5 lesstwar Forward Gate 1.0 nA Ves = 25V, Vos = Vas = 0 oO Leakage Current 6 E la Gate -3.0 | -100 | pA | Voc=20V ES Operating Current ln = 5.0 mA 7 -0.7 -10 nA | Ves =-5.6V Ta = +125C 8 Vas ton Gate-Source -1.0 -5.0 Vos = 10V, In = 1.0HA Cutoff Voltage V | Ves = -5.6V 9 Vasion Gate-Source -0.3 -3.0 Voc = 10V, Ib = 5mA, Vse = -5.6V ON Voltage 10 losx Zero Gate Voltage 7.0 40 Vos = 10V Drain Current mA | Ves=0 11 5.0 Ves = -5.6V Ta = #125C 12 fpsiony Drain-Source 100 450 | ohms | Ip = 1.0MA, Ves = 0, Vas = -5.6V ON Resistance 13 Ors Common-Source 5.0 75 10 |mmhos _ Forward Transconductance f= 1 KHz 14 Jos Common-Source 200 | 300 |ymhos Output Conductance 15 oO Ciss Common-Source 3.5 Voa = 10V = Input Capacitance lo = 5.0 MA 16 Zt Coss Common-Source 1.2 Ves = ~5.6V z i pF f=1 MHz 3B Output Capacitance 17 Crs Common-Source 0.3 Reverse Transfer Capacitance 18 Cys +sv) SOurce Node 45 Capacitance 19 Vasm Gate Source 50 mV Voltage Match ; 20 g fosion Drain-Source" 0.90 | 0.98 | 1.0 Ip = 1.0 mA, Ves = 0, Vas = 5.6V r ON Resistance Match oO 21 | losxm Zero Gate Voltage @ 0.90 1.0 Voe = 10V Ss Drain Current Match In =5.0mA 22 Gm Transconductance 0.90 1.0 Vas = ~5.6V f=1KHz M atch" (2 Note 1: Pulse Test, 80sec, 1% Duty Cycle . Note 2: Matoh of 4 channels TYPICAL PERFORMANCE CHARACTERISTICS: SEE 125911 3-122 4256 c-09