© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C48A
IC90 TC= 90°C24A
ICM TC= 25°C, 1 ms 9 6 A
SSOA VGE= 15 V, TJ = 125°C, RG = 33 Ω ICM = 48 A
(RBSOA) Clamped inductive load, VCC= 0.8 VCES @ 0.8 VCES
tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10µs
(SCSOA) RG = 33 Ω, non repetitive
PCTC= 25°C 150 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES IC= 250 µA, VGE = 0 V 600 V
VGE(th) IC= 1.5 mA, VCE = VGE 3.5 6.5 V
ICES VCE = 0.8 • VCES TJ = 25°C25µA
VGE = 0 V TJ = 125°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= IC90, VGE = 15 V 2.5 V
Features
zInternational standard packages
zGuaranteed Short Circuit SOA
capability
zLow VCE(sat)
- for low on-state conduction losses
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
zFast Fall Time for switching speeds
up to 50 kHz
Applications
zAC and DC motor speed control
zUninterruptible power supplies (UPS)
zWelding
Advantages
zEasy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
zHigh power density
98768(5/01)
G = Gate
E = Emitter TAB = Collector
TO-247 AD (IXSH)
(TAB)
TO-268 (D3) ( IXST)
(TAB)
GE
High Speed IGBT
Short Circuit SOA Capability
VCES = 600 V
IC25 = 48A
VCE(sat) = 2.5 V
tfi typ = 170 ns
IXSH 24N60B
IXST 24N60B
CE
G