Agilent CNY17-x Phototransistor Optocoupler High Collector-Emitter Voltage Type Data Sheet Description The CNY17 contains a light emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in widelead spacing option and lead bend SMD option. Collector-emitter voltage is above 70 V. Response time, tr, is typically 5 s and minimum CTR is 40% at input current of 10 mA. Ordering Information Specify part number followed by Option Number (if desired). CNY17-3-XXX Option Number 060 W00 300 500 = = = = VDE0884 Option 0.4" Lead Spacing Option Lead Bend SMD Option Tape and Reel Packaging Option Functional Diagram PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 Schematic 4 ANODE 1 IF 6 + BASE VF CATHODE 1 1. ANODE 2. CATHODE 3. NC 2 3 - 2 IC 5 4 COLLECTOR Features * High collector-emitter voltage (VCEO = 70 V) * High input-output isolation voltage (Viso = 5000 Vrms) * Current Transfer Ratio (CTR: min. 40% at IF = 10 mA, VCE = 5 V) * Response time (tr: typ., 5 s at VCC = 10 V, IC = 2 mA, RL = 100 ) * Dual-in-line package * UL approved * CSA approved * VDE approved * Options available: - Leads with 0.4" (10.16 mm) spacing (W00) - Leads bends for surface mounting (300) - Tape and reel for SMD (500) - VDE 0884 approvals (060) Applications * System appliances, measuring instruments * Signal transmission between circuits of different potentials and impedances * Feedback circuit in power supply EMITTER 4. EMITTER 5. COLLECTOR 6. BASE CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Package Outline Drawings TYPE NUMBER 6 5 7.3 0.5 (0.287) 4 OPTION CODE FOR OPTION 060 ONLY A CNY17- V YYWW 1 2 3.5 0.5 (0.138) 6.5 0.5 (0.256) 3.3 0.5 (0.13) 2.8 0.5 (0.110) PIN ONE DOT DATE CODE 7.62 0.3 (0.3) 0.5 TYP. (0.02) 3 0.5 0.1 (0.02) 2.54 0.25 (0.1) DIMENSIONS IN MILLIMETERS AND (INCHES) 0.35 +0.15/-0.10 (0.14) 7.62 ~ 9.98 Package Outline - Option W00 7.3 0.5 (0.287) 7.62 0.3 (0.3) 3.5 0.5 (0.138) 6.5 0.5 (0.256) 6.9 0.5 (0.272) 2.3 0.5 (0.09) 2.8 0.5 (0.110) 2.54 0.25 (0.1) 0.35 +0.15/-0.10 (0.014) 10.16 0.5 (0.4) 0.5 0.1 (0.02) DIMENSIONS IN MILLIMETERS AND (INCHES) Package Outline - Option 300 7.3 0.5 (0.287) 7.62 0.3 (0.3) 3.5 0.5 (0.138) 0.35 +0.15/-0.10 (0.014) 6.5 0.5 (0.256) 1.2 0.1 (0.047) 2.54 0.25 (0.1) 0.35 0.25 (0.014) 1.0 0.25 (0.039) 10.16 0.3 (0.4) DIMENSIONS IN MILLIMETERS AND (INCHES) 2 Absolute Maximum Ratings Storage Temperature, TS Operating Temperature, TA Lead Solder Temperature, max. (1.6 mm below seating plane) Average Forward Current, IF Reverse Input Voltage, VR Input Power Dissipation, PI Collector Current, IC Collector-Emitter Voltage, VCEO Emitter-Collector Voltage, VECO Collector-Base Voltage, VCBO Collector Power Dissipation Total Power Dissipation Isolation Voltage, V iso (AC for 1 minute, R.H. = 40 ~ 60%) -55C to +150C -55C to +100C 260C for 10 s 60 mA 6V 100 mW 150 mA 70 V 6V 70 V 150 mW 250 mW 5000 Vrms Electrical Specifications (TA = 25C) Parameter Forward Voltage Reverse Current Terminal Capacitance Collector Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage Collector Current *Current Transfer Ratio CNY17-1 CNY17-2 CNY17-3 CNY17-4 Collector-Emitter Saturation Voltage Response Time (Rise) Response Time (Fall) Isolation Resistance Symbol VF IR Ct ICEO BVCEO BVECO BVCBO IC CTR Floating Capacitance * CTR = 3 IC x 100% IF Typ. 1.4 - - - - - - - - - - - - 5 5 - Max. 1.7 10 100 50 - - - 32 80 125 200 320 0.3 10 10 - Units V A pF nA V V V mA % Test Conditions IF = 60 mA VR = 6 V V = 0, f = 1 MHz VCE = 10 V IC = 0.1 mA, IF = 0 IE = 10 A, IF = 0 IC = 0.1 mA, IF = 0 IF = 10 mA VCE = 5 V VCE(sat) tr tf Riso Min. - - - - 70 6 70 4 40 63 100 160 - - - 1 x 1011 V s s Cf - - 2 pF IF = 10 mA, IC = 2.5 mA VCE = 5 V, IC = 10 mA RL = 100 DC 500 V 40 ~ 60% R.H. V = 0, f = 1 MHz -25 0 25 50 75 100 125 TA - AMBIENT TEMPERATURE - C Figure 1. Forward current vs. temperature. IF - FORWARD CURRENT - mA 500 TA = 75C 200 TA = 50C TA = 0C 100 TA = 25C TA = -25C 50 20 10 5 2 1 0.5 0 1.0 1.5 2.0 2.5 3.0 160 150 100 50 0 -55 100 50 0 25 50 75 100 TA - AMBIENT TEMPERATURE - C Figure 7. Relative current transfer ratio vs. temperature. 4 50 75 -2 RL = 200 -4 RL = 150 -6 RL = 75 -8 -10 0.5 1 100 125 50 100 200 500 Figure 3. Frequency response. 45 200 VCE = 5 V TA = 25C 180 160 140 RBE = 120 100 80 60 100 k 40 500 k 20 0 5 10 20 2 f - FREQUENCY - kHz Figure 2. Collector power dissipation vs. temperature. 0 2 5 10 20 50 0.16 35 30 0.10 0.08 0.06 0.04 0.02 -25 0 25 50 75 100 TA - AMBIENT TEMPERATURE - C Figure 8. Collector-emitter saturation voltage vs. temperature. IF = 20 mA 25 20 IF = 10 mA 15 10 IF = 5 mA 5 IF = 2 mA 0 4 2 6 8 10 Figure 6. Collector current vs. collectoremitter voltage. 0.12 0 -55 PC (MAX.) VCE - COLLECTOR-EMITTER VOLTAGE - V IF = 10 mA IC = 2.5 mA 0.14 TA = 25C 40 IF = 30 mA 0 Figure 5. Current transfer ratio vs. forward current. VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V RELATIVE CURRENT TRANSFER RATIO - % IF = 10 mA VCE = 5 V -25 25 IF - FORWARD CURRENT - mA Figure 4. Forward current vs. forward voltage. 0 -55 0 IF = 10 mA VCC = 5 V TA = 25C 0 TA - AMBIENT TEMPERATURE - C VF - FORWARD VOLTAGE - V 150 -25 ICEO - COLLECTOR DARK CURRENT - A 0 -55 VOLTAGE GAIN AV - dB 20 2 200 IC - COLLECTOR CURRENT - mA 40 PC - COLLECTOR POWER DISSIPATION - mW 60 CTR - CURRENT TRANSFER RATIO - % IF - FORWARD CURRENT - mA 80 10-6 VCE = 10 V 10-7 10-8 10-9 10-10 10-11 10-12 10-13 -30 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE - C Figure 9. Collector dark current vs. temperature. 6 IF = 10 mA VCC = 5 V TA = 25C 5 VCE(SAT.) - COLLECTOR-EMITTER SATURATION VOLTAGE - V RESPONSE TIME - s 10 tr tf 2 1 0.5 0.02 0.05 0.2 0.1 0.5 RL - LOAD RESISTANCE - k Figure 10. Response time vs. load resistance. Test Circuit for Response Time TA = 25C 5 IC = 0.5 mA 4 IC = 1 mA 3 IC = 2 mA 2 IC = 3 mA IC = 5 mA 1 0 0 2.5 5.0 7.5 Test Circuit for Frequency Response VCC RL RD INPUT ~ INPUT 10% OUTPUT 90% ts tr 5 tf RL OUTPUT OUTPUT td 12.5 Figure 11. Collector-emitter saturation voltage vs. forward current. VCC RD 10.0 IF - FORWARD CURRENT - mA www.semiconductor.agilent.com Data subject to change. Copyright (c) 2001 Agilent Technologies, Inc. November 7, 2001 5988-4113EN