3
Absolute Maximum Ratings
Storage Temperature, TS–55˚C to +150˚C
Operating Temperature, TA–55˚C to +100˚C
Lead Solder Temperature, max. 260˚C for 10 s
(1.6 mm below seating plane)
Average Forward Current, IF60 mA
Reverse Input Voltage, VR6 V
Input Power Dissipation, PI100 mW
Collector Current, IC150 mA
Collector-Emitter Voltage, VCEO 70 V
Emitter-Collector Voltage, VECO 6 V
Collector-Base Voltage, VCBO 70 V
Collector Power Dissipation 150 mW
Total Power Dissipation 250 mW
Isolation Voltage, Viso (AC for 1 minute, R.H. = 40 ~ 60%) 5000 Vrms
* CTR = x 100%
IC
IF
Electrical Specifications (TA = 25˚C)
Parameter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage VF– 1.4 1.7 V IF = 60 mA
Reverse Current IR–– 10µAV
R
= 6 V
Terminal Capacitance Ct– – 100 pF V = 0, f = 1 MHz
Collector Dark Current ICEO –– 50nAV
CE = 10 V
Collector-Emitter Breakdown Voltage BVCEO 70 – – V IC = 0.1 mA, IF = 0
Emitter-Collector Breakdown Voltage BVECO 6– –V I
E
= 10 µA, IF = 0
Collector-Base Breakdown Voltage BVCBO 70 – – V IC = 0.1 mA, IF = 0
Collector Current IC4 – 32 mA IF = 10 mA
*Current Transfer Ratio CNY17-1 CTR 40 – 80 % VCE = 5 V
CNY17-2 63 – 125
CNY17-3 100 – 200
CNY17-4 160 – 320
Collector-Emitter Saturation Voltage VCE(sat) – – 0.3 V IF = 10 mA, IC = 2.5 mA
Response Time (Rise) tr–5 10µsV
CE = 5 V, IC = 10 mA
Response Time (Fall) tf–5 10µsR
L
= 100 Ω
Isolation Resistance Riso 1 x 1011 ––ΩDC 500 V
40 ~ 60% R.H.
Floating Capacitance Cf– – 2 pF V = 0, f = 1 MHz