VS-120NQ045PbF
www.vishay.com Vishay Semiconductors
Revision: 11-May-17 1Document Number: 94458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 120 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-120NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows for
reliable operation up to 150 °C junction temperature. Typical
applications are in high current switching power supplies,
plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV) 120 A
VR45 V
Package HALF-PAK (D-67)
Circuit Single diode
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 120 A
VRRM 45 V
IFSM tp = 5 μs sine 26 000 A
VF120 Apk, TJ = 125 °C 0.62 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-120NQ045PbF UNITS
Maximum DC reverse voltage VR45 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 105 °C, rectangular waveform 120
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 µs sine or 3 µs rect. pulse Following any rated load
condition and with rated
VRRM applied
26 000
10 ms sine or 6 ms rect. pulse 1550
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 13 A, L = 1 mH 81 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 13 A
VS-120NQ045PbF
www.vishay.com Vishay Semiconductors
Revision: 11-May-17 2Document Number: 94458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
120 A TJ = 25 °C 0.63
V
240 A 0.86
120 A TJ = 125 °C 0.62
240 A 0.81
Maximum reverse leakage current
See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR
10 mA
TJ = 125 °C 500
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 5200 pF
Typical series inductance LSFrom top of terminal hole to mounting plane 7.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg -55 to 150 °C
Maximum thermal resistance, junction to case RthJC DC operation
See fig. 4 0.38 °C/W
Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.05
Approximate weight 30 g
1.06 oz.
Mounting torqueminimum
Non-lubricated threads
3 (26.5)
N · m
(lbf ⋅ in)
maximum4 (35.4)
Terminal torqueminimum3.4 (30)
maximum5 (44.2)
Case style HALF-PAK module
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
01.00.5 1.5 2.0 2.5
1
1000
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
50101520 3530 4025 45
0.01
0.1
1
10
100
10 000
1000
TJ = 125 °C
TJ = 150 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
VS-120NQ045PbF
www.vishay.com Vishay Semiconductors
Revision: 11-May-17 3Document Number: 94458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
01020 4030 50
1000
10 000
TJ = 25 °C
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
20015010050 250
0
80
160
20
40
60
120
140
100
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
DC
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
1601208040 1401006020 180
0
120
140
0
40
80
100
60
20
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
VS-120NQ045PbF
www.vishay.com Vishay Semiconductors
Revision: 11-May-17 4Document Number: 94458
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95020
1000
10 100
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
1000 10 000
100 000
10 000
At any rated load condition
and with rated VRRM applied
following surge
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
- Average current rating (x 10)
1- Vishay Semiconductors product
2
- Product silicon identification
3
- N = not isolated
4
- Q = Schottky rectifier diode
5
- Voltage rating (045 = 45 V)
6
7- Lead (Pb)-free
Device code
5
132 4 6 7
12VS- 0 N Q 045 PbF
Document Number: 95020 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-May-09 1
D-67 HALF-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20)
4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3 - 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82)
20 (0.78)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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