December 2007 HY[B/I]25D512400C[C/E/F/T](L) HY[B/I]25D512800C[C/E/F/T](L) HY[B/I]25D512160C[C/E/F/T](L) 5 1 2 - M b i t D o u b l e - D a t a - R a t e SD R A M DDR SDRAM Internet Data Sheet Rev. 1.41 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Revision History: Rev. 1.41, 2007-12 Adapted internet edition Added IDD values Previous Revision: Rev. 1.40, 2007-12 Added HYI25D512800CE-5 and HYI25D512800CF-5,Added HYI25D512800CT-6, HYI25D512800CE-6, HYI25D512800CT-5,HYI25D512800CC-6, HYI25D512800CF-6 and HYI25D512800CC-5 Package Outline Figures updated Previous Revision: Rev. 1.31, 2006-09 Qimonda update We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: techdoc@qimonda.com qag_techdoc_rev411 / 3.31 QAG / 2007-01-22 03292006-3TFJ-HNV3 2 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 1 Overview This chapter gives an overview of the 512-Mbit Double-Data-Rate SDRAM product family and describes its main characteristics. 1.1 * * * * * * * * * * * * * * * * * * * Features Double data rate architecture: two data transfers per clock cycle Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for reads and is center-aligned with data for writes Differential clock inputs (CK and CK) Four internal banks for concurrent operation Data mask (DM) for write data DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS Programmable CAS latency: 2, 2.5, 3 Programmable burst lengths: 2, 4, or 8 Auto Precharge option for each burst access Auto Refresh and Self Refresh Modes RAS-lockout supported tRAP = tRCD 7.8 s Maximum Average Periodic Refresh Interval 2.5 V (SSTL_2 compatible) I/O VDD = 2.5 V 0.2 V VDDQ = 2.5 V 0.2 V Packages: PG-TSOPII-66, PG-TFBGA-60, P-TSOPII-66, P-TFBGA-60 RoHS Compliant Products TABLE 1 Performance Part Number Speed Code Speed Grade Component Max. Clock Frequency @CL3 @CL2.5 @CL2 Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 fCK3 fCK2.5 fCK2 -5 -6 Unit DDR400B DDR333B -- 200 166 MHz 166 166 MHz 133 133 MHz 3 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 1.2 Description Read and write accesses to the DDR SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the Active command are used to select the bank and row to be accessed. The address bits registered coincident with the Read or Write command are used to select the bank and the starting column location for the burst access. The DDR SDRAM provides for programmable Read or Write burst lengths of 2, 4 or 8 locations. An Auto Precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard SDRAMs, the pipelined, multibank architecture of DDR SDRAMs allows for concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation time. An auto refresh mode is provided along with a power-saving power-down mode. All inputs are compatible with the Industry Standard for SSTL_2. All outputs are SSTL_2, Class II compatible. Note: The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation. The 512-Mbit is a high-speed CMOS, dynamic randomaccess memory containing 536, 870, 912 bits. It is internally configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate SDRAM uses a doubledata-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the 512-Mbit Double-Data-Rate SDRAM effectively consists of a single 2n-bit wide, one clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during Reads and by the memory controller during Writes. DQS is edge-aligned with data for Reads and center-aligned with data for Writes. The 512-Mbit Double-Data-Rate SDRAM operates from a differential clock (CK and CK; the crossing of CK going HIGH and CK going LOW is referred to as the positive edge of CK). Commands (address and control signals) are registered at every positive edge of CK. Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 4 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 2 Ordering Information for RoHS Compliant Products Product Type1) Org. Speed CAS-RCD-RP Latencies2)3)4) Clock (MHz) Package Note5) Standard Temperature Range (0 C - +85 C) DDR400B( 3-3-3) HYB25D512160CF-5 x16 DDR400B 3-3-3 200 PG-TFBGA-60 HYB25D512160CFL-5 x16 DDR400B 3-3-3 200 PG-TFBGA-60 HYB25D512400CE-5 x4 DDR400B 3-3-3 200 PG-TSOPII-66 HYB25D512400CFL-5 x4 DDR400B 3-3-3 200 PG-TFBGA-60 HYB25D512800CFL-5 x8 DDR400B 3-3-3 200 PG-TFBGA-60 HYB25D512800CEL-5 x8 DDR400B 3-3-3 200 PG-TSOPII-66 HYB25D512160CE-5 x16 DDR400B 3-3-3 200 PG-TSOPII-66 HYB25D512400CF-5 x4 DDR400B 3-3-3 200 PG-TFBGA-60 HYB25D512800CE-5 x8 DDR400B 3-3-3 200 PG-TSOPII-66 HYB25D512800CF-5 x8 DDR400B 3-3-3 200 PG-TFBGA-60 HYB25D512160CEL-6 x16 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYB25D512160CF-6 x16 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYB25D512160CFL-6 x16 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYB25D512400CE-6 x4 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYB25D512400CFL-6 x4 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYB25D512800CEL-6 x8 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYB25D512800CFL-6 x8 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYB25D512405CF-6 x4 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYB25D512160CE-6 x16 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYB25D512400CF-6 x4 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYB25D512800CE-6 x8 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYB25D512800CF-6 x8 DDR333B 2.5-3-3 166 PG-TFBGA-60 3-3-3 200 PG-TSOPII-66 DDR333B( 2.5-3-3) Industrial Temperature Range (-40 C - +85 C) DDR400B( 3-3-3) HYI25D512160CE-5 x16 HYI25D512160CF-5 x16 DDR400B 3-3-3 200 PG-TFBGA-60 HYI25D512800CE-5 x8 DDR400B 3-3-3 200 PG-TSOPII-66 HYI25D512800CF-5 x8 DDR400B 3-3-3 200 PG-TFBGA-60 HYI25D512160CE-6 x16 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYI25D512160CF-6 x16 DDR333B 2.5-3-3 166 PG-TFBGA-60 HYI25D512800CE-6 x8 DDR333B 2.5-3-3 166 PG-TSOPII-66 HYI25D512800CF-6 x8 DDR333B 2.5-3-3 166 PG-TFBGA-60 DDR400B DDR333B( 2.5-3-3) 1) For detailed information regarding Product Type of Qimonda please see chapter "Product Nomenclature" of this datasheet. 2) CAS: Column Address Strobe Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 5 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 3) RCD: Row Column Delay 4) RP: Row Precharge 5) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury, lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers. TABLE 3 Ordering Information for non RoHS Compliant Products Product Type1) Org. Speed CAS-RCD-RP Latencies2)3)4) Clock (MHz) Package Standard Temperature Range (0 C - +85 C) DDR400B( 3-3-3) HYB25D512160CT-5 x16 DDR400B 3-3-3 200 P-TSOPII-66 HYB25D512400CC-5 x4 DDR400B 3-3-3 200 P-TFBGA-60 HYB25D512400CT-5 x4 DDR400B 3-3-3 200 P-TSOPII-66 HYB25D512800CC-5 x8 DDR400B 3-3-3 200 P-TFBGA-60 HYB25D512800CT-5 x8 DDR400B 3-3-3 200 P-TSOPII-66 HYB25D512160CC-5 x16 DDR400B 3-3-3 200 P-TFBGA-60 HYB25D512160CC-6 x16 DDR333B 2.5-3-3 166 P-TFBGA-60 HYB25D512160CT-6 x16 DDR333B 2.5-3-3 166 P-TSOPII-66 HYB25D512400CC-6 x4 DDR333B 2.5-3-3 166 P-TFBGA-60 HYB25D512400CT-6 x4 DDR333B 2.5-3-3 166 P-TSOPII-66 HYB25D512800CC-6 x8 DDR333B 2.5-3-3 166 P-TFBGA-60 HYB25D512800CT-6 x8 DDR333B 2.5-3-3 166 P-TSOPII-66 3-3-3 200 P-TFBGA-60 DDR333B( 2.5-3-3) Industrial Temperature Range (-40 C - +85 C) DDR400B( 3-3-3) HYI25D512160CC-5 x16 HYI25D512160CT-5 x16 DDR400B 3-3-3 200 P-TSOPII-66 HYI25D512800CC-5 x8 DDR400B 3-3-3 200 P-TFBGA-60 HYI25D512800CT-5 x8 DDR400B 3-3-3 200 P-TSOPII-66 HYI25D512160CC-6 x16 DDR333B 2.5-3-3 166 P-TFBGA-60 HYI25D512160CT-6 x16 DDR333B 2.5-3-3 166 P-TSOPII-66 HYI25D512800CC-6 x8 DDR333B 2.5-3-3 166 P-TFBGA-60 HYI25D512800CT-6 x8 DDR333B 2.5-3-3 166 P-TSOPII-66 DDR400B DDR333B( 2.5-3-3) 1) 2) 3) 4) For detailed information regarding Product Type of Qimonda please see chapter "Product Nomenclature" of this datasheet. CAS: Column Address Strobe RCD: Row Column Delay RP: Row Precharge Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 6 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 2 Configuration This chapter contains the chip configuration and block diagrams. 2.1 Configuration for TSOPII-66 The pin configuration of a DDR SDRAM is listed by function in Table 4. The abbreviations used in the Pin#/Buffer Type column are explained in Table 5 and Table 6 respectively. TABLE 4 Configuration Pin# Name Pin Type Buffer Type Function Clock Signals 45 CK I SSTL Clock Signal 46 CK I SSTL Complementary Clock Signal 44 CKE I SSTL Clock Enable 23 RAS I SSTL Row Address Strobe 22 CAS I SSTL Column Address Strobe 21 WE I SSTL Write Enable 24 CS I SSTL Chip Select Bank Address Bus Control Signals Address Signals 26 BA0 I SSTL 27 BA1 I SSTL 29 A0 I SSTL 30 A1 I SSTL 31 A2 I SSTL 32 A3 I SSTL 35 A4 I SSTL 36 A5 I SSTL 37 A6 I SSTL 38 A7 I SSTL 39 A8 I SSTL 40 A9 I SSTL 28 A10 I SSTL AP I SSTL 41 A11 I SSTL 42 A12 I SSTL Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 Address Bus 7 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Pin# Name Pin Type Buffer Type Function Data Signal Bus 3:0 Data Signals x4 Organization 5 DQ0 I/O SSTL 11 DQ1 I/O SSTL 56 DQ2 I/O SSTL 62 DQ3 I/O SSTL Data Strobe x4 Organization 51 DQS I/O SSTL Data Strobe I SSTL Data Mask Data Signal Bus 7:0 Data Mask x4 Organization 47 DM Data Signals x 8 Organization 2 DQ0 I/O SSTL 5 DQ1 I/O SSTL 8 DQ2 I/O SSTL 11 DQ3 I/O SSTL 56 DQ4 I/O SSTL 59 DQ5 I/O SSTL 62 DQ6 I/O SSTL 65 DQ7 I/O SSTL Data Strobe x 8 Organization 51 DQS I/O SSTL Data Strobe SSTL Data Mask Data Signal 15:0 Data Mask x 8 Organization 47 DM I Data Signals x16 Organization 2 DQ0 I/O SSTL 4 DQ1 I/O SSTL 5 DQ2 I/O SSTL 7 DQ3 I/O SSTL 8 DQ4 I/O SSTL 10 DQ5 I/O SSTL 11 DQ6 I/O SSTL 13 DQ7 I/O SSTL 54 DQ8 I/O SSTL 56 DQ9 I/O SSTL 57 DQ10 I/O SSTL 59 DQ11 I/O SSTL 60 DQ12 I/O SSTL 62 DQ13 I/O SSTL 63 DQ14 I/O SSTL 65 DQ15 I/O SSTL Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 8 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Pin# Name Pin Type Buffer Type Function Data Strobe x16 Organization 51 UDQS I/O SSTL Data Strobe Upper Byte 16 LDQS I/O SSTL Data Strobe Lower Byte Data Mask x16 Organization 47 UDM I SSTL Data Mask Upper Byte 20 LDM I SSTL Data Mask Lower Byte VREF Power Supplies 49 AI -- I/O Reference Voltage 3, 9, 15, 55, 61 VDDQ PWR -- I/O Driver Power Supply 1, 18, 33 VDD PWR -- Power Supply 6, 12, 52, 58, 64 VSSQ PWR -- Power Supply 34,48, 66 PWR -- Power Supply -- Not Connected VSS Not Connected x4 Organization 2, 4, 7, 8, 10, 13, 14, 16, 17, 19, 20, 25, 43, 50, 53, 54, 57, 59, 60, 63, 65 NC NC Not Connected x 8 Organization 4, 7, 10, 13, 14, NC 16, 17, 19, 20, 25, 43, 50, 53, 54, 57, 60, 63 NC -- Not Connected x16 Organization 14, 17, 19, 25, 43, 50, 53 NC Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 NC -- 9 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 5 Abbreviations for Pin Type Abbreviation Description I Standard input-only pin. Digital levels O Output. Digital levels I/O I/O is a bidirectional input/output signal AI Input. Analog levels PWR Power GND Ground NC Not Connected TABLE 6 Abbreviations for Buffer Type Abbreviation Description SSTL Serial Stub Terminalted Logic (SSTL2) LV-CMOS Low Voltage CMOS CMOS CMOS Levels OD Open Drain. The corresponding pin has 2 operational states, active low and tristate, and allows multiple devices to share as a wire-OR Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 10 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM FIGURE 1 Pin Configuration TSOPII-66 [ [ [ 9'' 9'' 9'' 966 966 966 1& '4 '4 '4 '4 1& 9''4 9''4 9''4 9664 9664 9664 1& 1& '4 '4 1& 1& '4 '4 '4 '4 '4 '4 9664 9664 9664 9''4 9''4 9''4 1& 1& '4 '4 1& 1& 1& '4 '4 '4 '4 1& 9''4 9''4 9''4 9664 9664 9664 1& 1& '4 '4 1& 1& '4 '4 '4 '4 '4 '4 9664 9664 9664 9''4 9''4 9''4 1& 1& '4 '4 1& 1& 1& 1& 1& 1& 1& 1& 9''4 9''4 9''4 9664 9664 9664 1& 1& /'46 8'46 '46 '46 1& 1& 1& 1&$ 1&$ 1&$ 9'' 9'' 9'' 95() 95() 95() 1& 1& 1& 966 966 966 1& 1& /'0 8'0 '0 '0 :( :( :( &. &. &. &$6 &$6 &$6 &. &. &. 5$6 5$6 5$6 &.( &.( &.( &6 &6 &6 1& %$ 1& %$ 1& $ 1& 1& 1& $ $ $ $ $ %$ %$ %$ %$ $ $ $ $$3 $$3 $$3 $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ 9'' 9'' 9'' 966 966 966 033' Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 11 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 2.2 Configuration for TFBGA-60 The ball configuration of a DDR SDRAM is listed by function in Table 7. The abbreviations used in the Ball#/Buffer Type column are explained in Table 8 and Table 9 respectively. TABLE 7 Configuration Ball# Name Pin Type Buffer Type Function G2 CK1 I SSTL Clock Signal G3 CK1 I SSTL Complementary Clock Signal H3 CKE I SSTL Clock Enable RAS I SSTL Row Address Strobe G8 CAS I SSTL Column Address Strobe G7 WE I SSTL Write Enable H8 CS I SSTL Chip Select Bank Address Bus Clock Signals Control Signals H7 Address Signals J8 BA0 I SSTL J7 BA1 I SSTL K7 A0 I SSTL L8 A1 I SSTL L7 A2 I SSTL M8 A3 I SSTL M2 A4 I SSTL L3 A5 I SSTL L2 A6 I SSTL K3 A7 I SSTL K2 A8 I SSTL J3 A9 I SSTL K8 A10 I SSTL AP I SSTL J2 A11 I SSTL H2 A12 I SSTL Address Bus Data Signals x4 Organization B7 DQ0 I/O SSTL D7 DQ1 I/O SSTL D3 DQ2 I/O SSTL B3 DQ3 I/O SSTL Data Signal Bus 3:0 Data Strobe x4 Organization E3 DQS Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 I/O SSTL Data Strobe 12 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Ball# Name Pin Type Buffer Type Function I SSTL Data Mask SSTL Data Signal Bus 7:0 Data Mask x4 Organization F3 DM Data Signals x 8 Organization A8 DQ0 I/O B7 DQ1 I/O SSTL C7 DQ2 I/O SSTL D7 DQ3 I/O SSTL D3 DQ4 I/O SSTL C3 DQ5 I/O SSTL B3 DQ6 I/O SSTL A2 DQ7 I/O SSTL Data Strobe x 8 Organization E3 DQS I/O SSTL Data Strobe SSTL Data Mask Data Signal 15:0 Data Mask x 8 Organization F3 DM I Data Signals x16 Organization A8 DQ0 I/O SSTL B9 DQ1 I/O SSTL B7 DQ2 I/O SSTL C9 DQ3 I/O SSTL C7 DQ4 I/O SSTL D9 DQ5 I/O SSTL D7 DQ6 I/O SSTL E9 DQ7 I/O SSTL E1 DQ8 I/O SSTL D3 DQ9 I/O SSTL D1 DQ10 I/O SSTL C3 DQ11 I/O SSTL C1 DQ12 I/O SSTL B3 DQ13 I/O SSTL B1 DQ14 I/O SSTL A2 DQ15 I/O SSTL Data Strobe x16 Organization E3 UDQS I/O SSTL Data Strobe Upper Byte E7 LDQS I/O SSTL Data Strobe Lower Byte Data Mask x16 Organization F3 UDM I SSTL Data Mask Upper Byte F7 LDM I SSTL Data Mask Lower Byte VREF AI -- I/O Reference Voltage Power Supplies F1 Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 13 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Ball# Name Pin Type Buffer Type Function A9, B2, C8, D2, VDDQ E8 PWR -- I/O Driver Power Supply A7, F8, M7 VDD PWR -- Power Supply A1, B8, C2, D8, VSSQ E2 PWR -- Power Supply A3, F2, M3 PWR -- Power Supply -- Not Connected -- Not Connected -- Not Connected VSS Not Connected x4 Organization A2, A8, B1, B9, NC C1, C3, C7, C9, D1, D9, E1, E7, E9, F7, F9 NC Not Connected x8 Organization B1, B9, C1, C9, NC D1, D9, E1, E7, E9, F7, F9 NC Not Connected x16 Organization F9 NC NC TABLE 8 Abbreviations for Ball Type Abbreviation Description I Standard input-only pin. Digital levels O Output. Digital levels I/O I/O is a bidirectional input/output signal AI Input. Analog levels PWR Power GND Ground NC Not Connected TABLE 9 Abbreviations for Buffer Type Abbreviation Description SSTL Serial Stub Terminalted Logic (SSTL2) LV-CMOS Low Voltage CMOS CMOS CMOS Levels OD Open Drain. The corresponding pin has 2 operational states, active low and tristate, and allows multiple devices to share as a wire-OR Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 14 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM FIGURE 2 Configuration for x4 Organization, TFBGA-60, Top View 9664 1& 966 1& 9''4 1& $ 9'' 1& 9''4 '4 % '4 9664 1& 9664 1& & 1& 9''4 1& 1& 9''4 '4 ' '4 9664 1& 1& 9664 '46 ( 1& 9''4 1& 95() 966 '0 ) 1& 9'' 1& &. &. * :( &$6 $ &.( + 5$6 &6 $ $ - %$ %$ $ $ . $ $$3 $ $ / $ $ $ 966 0 9'' $ [ Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 15 Date: 2007-12-13 033' Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM FIGURE 3 Configuration for x8 Organization, TFBGA-60, Top View 9664 '4 966 1& 9''4 1& $ 9'' '4 9''4 '4 % '4 9664 1& 9664 '4 & '4 9''4 1& 1& 9''4 '4 ' '4 9664 1& 1& 9664 '46 ( 1& 9''4 1& 95() 966 '0 ) 1& 9'' 1& &. &. * :( &$6 $ &.( + 5$6 &6 $ $ - %$ %$ $ $ . $ $$3 $ $ / $ $ $ 966 0 9'' $ [ 033' Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 16 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM FIGURE 4 Configuration for x16 Organization, TFBGA-60, Top View $ 9'' '4 9''4 '4 % '4 9664 '4 9664 '4 & '4 9''4 '4 '4 9''4 '4 ' '4 9664 '4 '4 9664 8'46 ( /'46 9''4 '4 95() 966 8'0 ) /'0 9'' 1& &. &. * :( &$6 $ &.( + 5$6 &6 $ $ - %$ %$ $ $ . $ $$3 $ $ / $ $ $ 966 0 9'' $ 9664 '4 966 '4 9''4 '4 [ Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 17 Date: 2007-12-13 033' Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 3 Functional Description The 512-Mbit Double-Data-Rate SDRAM uses a double-data-rate architecture to achieve high-speed operation. 3.1 Mode Register Definition The Mode Register is used to define the specific mode of operation of the DDR SDRAM. %$ %$ $ $ $ $ $ $ $ $ $ $ $ $ 2SHUD WLQ J0 2' ( &/ %7 %/ Z Z Z Z UHJD GGU $ 03%7 TABLE 10 Mode Register Definition Field Bits Type1) Description BL [2:0] W Burst Length Note: All other bit combinations are RESERVED. 001B 2 010B 4 011B 8 BT 3 Burst Type 0 Sequential 1 Interleaved CL [6:4] CAS Latency Note: All other bit combinations are RESERVED. 010B 2 110B 2.5 011B 3 MODE [12:7] Operating Mode Note: All other bit combinations are RESERVED. 000000 Normal Operation without DLL Reset 000010 Normal Operation with DLL Reset 1) W = write only register bit Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 18 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 3.1.1 Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Table 11. TABLE 11 Burst Definition Burst Length Starting Column Address A2 A1 2 A0 Type = Sequential Type = Interleaved 0 0-1 0-1 1 1-0 1-0 0 0 0-1-2-3 0-1-2-3 0 1 1-2-3-0 1-0-3-2 1 0 2-3-0-1 2-3-0-1 1 1 3-0-1-2 3-2-1-0 0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7 0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6 0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4 1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3 1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2 1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1 1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0 4 8 Order of Accesses Within a Burst Notes 1. 2. 3. 4. For a burst length of two, A1-Ai selects the two-data-element block; A0 selects the first access within the block. For a burst length of four, A2-Ai selects the four-data-element block; A0-A1 selects the first access within the block. For a burst length of eight, A3-Ai selects the eight-data- element block; A0-A2 selects the first access within the block. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 19 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 3.2 Extended Mode Register The Extended Mode Register controls functions beyond those controlled by the Mode Register. %$ %$ $ $ $ $ $ $ $ 2SHUDWLQJ02'( '6 '// Z Z Z UHJDGGU $ $ $ $ $ $ 03%7 TABLE 12 Extended Mode Register 1) Field Bits Type Description DLL 0 w DLL Status Enabled 0B 1B Disabled DS 1 Drive Strength 0B Normal 1B Weak MODE [12:2] Operating Mode 00000000000B Normal Operation Notes 1. A2 must be 0 to provide compatibility with early DDR devices. 2. All other bit combinations are RESERVED. 1) w = write only register bit Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 20 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 4 Truth Tables The truth tables in this chapter summarize the commands and there signal coding to control a standard Double-Data-Rate SDRAM. TABLE 13 Truth Table 1: Commands Name (Function) CS RAS CAS WE Address MNE Note Deselect (NOP) H X X X X NOP 1)2) No Operation (NOP) L H H H X NOP 1)2) Active (Select Bank And Activate Row) L L H H Bank/Row ACT 1)3) Read (Select Bank And Column, And Start Read Burst) L H L H Bank/Col Read 1)4) Write (Select Bank And Column, And Start Write Burst) L H L L Bank/Col Write 1)4) Burst Terminate L H H L X BST 1)5) Precharge (Deactivate Row In Bank Or Banks) L L H L Code PRE 1)6) Auto Refresh Or Self Refresh (Enter Self Refresh Mode) L L L H X AR/SR 1)7)8) Mode Register Set L L L L Op-Code MRS 1)9) 1) 2) 3) 4) 5) 6) 7) 8) 9) CKE is HIGH for all commands shown exceptSelf Refresh.VREF must be maintained during Self Refresh operation. Deselect and NOP are functionally interchangeable. BA0, BA1 provide bank address and A0 - Ai provide row address. BA0, BA1 provide bank address; A0 - Ai provide column address ; A10 HIGH enables the Auto Precharge feature (nonpersistent), A10 LOW disables the Auto Precharge feature. Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts with Auto Precharge enabled or for write bursts. A10 LOW: BA0, BA1 determine which bank is precharged. A10 HIGH: all banks are precharged and BA0, BA1 are "Don't Care". This command is AUTO REFRESH if CKE is HIGH; Self Refresh if CKE is LOW Internal refresh counter controls row and bank addressing; all inputs and I/Os are "Don't Care" except for CKE. BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are reserved; A0 - Ai provide the op-code to be written to the selected Mode Register. TABLE 14 Truth Table 2: DM Operation Name (Function) DM DQs Note 1) Write Enable L Valid Write Inhibit H X 1) Used to mask write data; provided coincident with the corresponding data. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 21 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 15 Truth Table 3: Clock Enable (CKE) Current State CKE n-1 CKEn Command n Action n Notes Previous Cycle Current Cycle Self Refresh L L X Maintain Self-Refresh 1) Self Refresh L H Deselect or NOP Exit Self-Refresh 2) Power Down L L X Maintain Power-Down - Power Down L H Deselect or NOP Exit Power-Down - All Banks Idle H L Deselect or NOP Precharge Power-Down Entry - All Banks Idle H L AUTO REFRESH Self Refresh Entry - Bank(s) Active H L Deselect or NOP Active Power-Down Entry - H H See Table 16 - - 1) VREF must be maintained during Self Refresh operation 2) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (tXSNR) period. A minimum of 200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock. 1. 2. 3. 4. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge. Current state is the state of the DDR SDRAM immediately prior to clock edge n. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n. All states and sequences not shown are illegal or reserved. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 22 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 16 Truth Table 4: Current State Bank n - Command to Bank n (same bank) Current State CS RAS CAS WE Command Action Notes H X X X Deselect NOP. Continue previous operation. 1)2)3)4)5)6) L H H H No Operation NOP. Continue previous operation. 1)2)3)4)5)6) L L H H Active Select and activate row 1)2)3)4)5)6) L L L H AUTO REFRESH - 1)2)3)4)5)6)7) L L L L MODE REGISTER SET - 1)2)3)4)5)6)7) L H L H Read Select column and start Read burst 1)2)3)4)5)6)8) L H L L Write Select column and start Write burst 1)2)3)4)5)6)8) L L H L Precharge Deactivate row in bank(s) 1)2)3)4)5)6)9) Read (Auto Precharge Disabled) L H L H Read Select column and start new Read burst 1)2)3)4)5)6)8) L L H L Precharge Truncate Read burst, start Precharge 1)2)3)4)5)6)9) L H H L BURST TERMINATE BURST TERMINATE 1)2)3)4)5)6)10) Write (Auto Precharge Disabled) L H L H Read Select column and start Read burst 1)2)3)4)5)6)8)11) L H L L Write Select column and start Write burst 1)2)3)4)5)6)8) L L H L Precharge Truncate Write burst, start Precharge 1)2)3)4)5)6)9)11) Any Idle Row Active 1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 15 and after tXSNR/tXSRD has been met (if the previous state was self refresh). 2) This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below. 3) Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. 4) The following states must not be interrupted by a command issued to the same bank. Precharging: Starts with registration of a Precharge command and ends when tRP is met. Once tRP is met, the bank is in the idle state. Row Activating: Starts with registration of an Active command and ends when tRCD is met. Once tRCD is met, the bank is in the "row active" state. Read w/Auto Precharge Enabled: Starts with registration of a Read command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a Write command with Auto Precharge enabled and ends when tRP has been met. Once tRP is met, the bank is in the idle state. Deselect or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and according to Table 17. 5) The following states must not be interrupted by any executable command; Deselect or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an Auto Refresh command and ends when tRFC is met. Once tRFC is met, the DDR SDRAM is in the "all banks idle" state. Accessing Mode Register: Starts with registration of a Mode Register Set command and ends when tMRD has been met. Once tMRD is met, the DDR SDRAM is in the "all banks idle" state. Precharging All: Starts with registration of a Precharge All command and ends when tRP is met. Once tRP is met, all banks is in the idle state. 6) All states and sequences not shown are illegal or reserved. 7) Not bank-specific; requires that all banks are idle. 8) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with Auto Precharge disabled. 9) May or may not be bank-specific; if all/any banks are to be precharged, all/any must be in a valid state for precharging. 10) Not bank-specific; BURST TERMINATE affects the most recent Read burst, regardless of bank. 11) Requires appropriate DM masking. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 23 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 17 Truth Table 5: Current State Bank n - Command to Bank m (different bank) Current State CS RAS CAS WE Command Action Notes H X X X Deselect NOP. Continue previous operation. 1)2)3)4)5)6) L H H H No Operation NOP. Continue previous operation. 1)2)3)4)5)6) Idle X X X X Any Command Otherwise Allowed to Bank m - 1)2)3)4)5)6) Row Activating, Active, or Precharging L L H H Active Select and activate row 1)2)3)4)5)6) L H L H Read Select column and start Read burst 1)2)3)4)5)6)7) L H L L Write Select column and start Write burst 1)2)3)4)5)6)7) L L H L Precharge - 1)2)3)4)5)6) Read (Auto Precharge Disabled) L L H H Active Select and activate row 1)2)3)4)5)6) L H L H Read Select column and start new Read burst 1)2)3)4)5)6)7) L L H L Precharge - 1)2)3)4)5)6) Write (Auto Precharge Disabled) L L H H Active Select and activate row 1)2)3)4)5)6) L H L H Read Select column and start Read burst 1)2)3)4)5)6)7)8) L H L L Write Select column and start new Write burst 1)2)3)4)5)6)7) L L H L Precharge - 1)2)3)4)5)6) L L H H Active Select and activate row 1)2)3)4)5)6) L H L H Read Select column and start new Read burst 1)2)3)4)5)6)7)9) L H L L Write Select column and start Write burst 1)2)3)4)5)6)7)9)10) L L H L Precharge - 1)2)3)4)5)6) L L H H Active Select and activate row 1)2)3)4)5)6) L H L H Read Select column and start Read burst 1)2)3)4)5)6)7)9) L H L L Write Select column and start new Write burst 1)2)3)4)5)6)7)9) L L H L Precharge - 1)2)3)4)5)6) Any Read (With Auto Precharge) Write (With Auto Precharge) 1) This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Table 15: Clock Enable (CKE) and after tXSNR/tXSRD has been met, if the previous state was self refresh) 2) This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3) Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A Read burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. Write: A Write burst has been initiated, with Auto Precharge disabled, and has not yet terminated or been terminated. 4) AUTO REFRESH and Mode Register Set commands may only be issued when all banks are idle. 5) A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 6) All states and sequences not shown are illegal or reserved. 7) Reads or Writes listed in the Command/Action column include Reads or Writes with Auto Precharge enabled and Reads or Writes with Auto Precharge disabled. 8) Requires appropriate DM masking. 9) Concurrent Auto Precharge:This device supports "Concurrent Auto Precharge". When a read with auto precharge or a write with auto precharge is enabled any command may follow to the other banks as long as that command does not interrupt the read or write data Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 24 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from a read or write command with auto precharge enable, to a command to a different banks is summarized in Table 18. 10) A Write command may be applied after the completion of data output. TABLE 18 Truth Table 6: Concurrent Auto Precharge From Command To Command (different bank) Minimum Delay with Concurrent Auto Unit Precharge Support WRITE w/AP Read or Read w/AP 1 + (BL/2) + tWTR Write to Write w/AP BL/2 Precharge or Activate 1 Read or Read w/AP BL/2 Write or Write w/AP CL (rounded up) + BL/2 Precharge or Activate 1 Read w/AP Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 25 Date: 2007-12-13 tCK tCK tCK tCK tCK tCK Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 5 Electrical Characteristics This chapter describes the electrical characteristics. 5.1 Operating Conditions This chapter contains the operating conditions tables. TABLE 19 Absolute Maximum Ratings Parameter Voltage on I/O pins relative to VSS Voltage on inputs relative to VSS Voltage on VDD supply relative to VSS Voltage on VDDQ supply relative to VSS Operating temperature (ambient) Storage temperature (plastic) Power dissipation (per SDRAM component) Short circuit output current Symbol Values Unit Note Min. Typ. Max. VIN, VOUT VIN VDD VDDQ TA -0.5 -- VDDQ + 0.5 V -- -1 -- +3.6 V -- -1 -- +3.6 V -- -1 -- +3.6 V -- 0 -- +70 C for HYB... -40 -- +85 C for HYI... TSTG PD IOUT -55 -- +150 C -- -- 1 -- W -- -- 50 -- mA -- Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 26 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 20 Input and Output Capacitances Parameter Input Capacitance: CK, CK Symbol CI1 Values Unit Note/ Test Condition TSOPII1) Min. Typ. Max. 2.0 -- 3.0 pF 1.5 -- 2.5 pF TFBGA 1) Delta Input Capacitance CdI1 -- -- 0.25 pF 1) Input Capacitance: All other input-only pins CI2 1.5 -- 2.5 pF TFBGA 1) 2.0 -- 3.0 pF TSOPII 1) Delta Input Capacitance: All other input-only pins CdIO -- -- 0.5 pF 1) Input/Output Capacitance: DQ, DQS, DM CIO 3.5 -- 4.5 pF TFBGA 1)2) 4.0 -- 5.0 pF TSOPII 1)2) pF 1) Delta Input/Output Capacitance: DQ, DQS, DM CdIO -- -- 0.5 1) These values are guaranteed by design and are tested on a sample base only. VDDQ = VDD = 2.5 V 0.2 V, f = 100 MHz, TA = 25 C, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground. 2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at the board level. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 27 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 21 Electrical Characteristics and DC Operating Conditions Parameter Symbol Unit Note/Test Condition 1) Values Min. Typ. Max. VDD VDDQ VSS, VSSQ 2.3 2.5 2.7 2.3 2.5 VREF VTT 0.49 x VDDQ 2.7 V fCK 200 MHz fCK 200 MHz 2) 0 V -- 0.51 x VDDQ V 3) VREF - 0.04 VREF + 0.04 V 4) VIH.DC VIL.DC VIN.DC VREF + 0.15 V 5) V 5) -0.3 VDDQ + 0.3 VREF - 0.15 VDDQ + 0.3 V 5) Input Differential Voltage, CK and CK Inputs VID.DC 0.36 VDDQ + 0.6 V 5)6) VI-Matching Pull-up Current to Pull-down Current VIRatio 0.71 1.4 -- 7) Input Leakage Current II -2 2 A Any input 0 V VIN VDD; All other pins not under test = 0 V 8) Output Leakage Current IOZ -5 5 A DQs are disabled; 0 V VOUT VDDQ 8) Output High Current, Normal Strength Driver IOH -- TBD mA VOUT = 1.95 V Output Low Current, Normal Strength Driver IOL TBD -- mA VOUT = 0.35 V Device Supply Voltage Output Supply Voltage Supply Voltage, I/O Supply Voltage Input Reference Voltage I/O Termination Voltage (System) Input High (Logic1) Voltage Input Low (Logic0) Voltage Input Voltage Level, CK and CK Inputs 0 0.5 x VDDQ -0.3 V 1) 0 C TA 70 C; VDD = VDDQ = 2.5 V 0.2 V 2) Under all conditions, VDDQ must be less than or equal to VDD. 3) Peak to peak AC noise on VREF may not exceed 2% VREF.DC. VREF is also expected to track noise variations in VDDQ. 4) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF. 5) Inputs are not recognized as valid until VREF stabilizes. 6) VID is the magnitude of the difference between the input level on CK and the input level on CK. 7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between pull-up and pull-down drivers due to process variation. 8) Values are shown per pin. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 28 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 5.2 AC Characteristics Notes 1-5 apply to the following Tables; Electrical Characteristics and DC Operating Conditions, AC Operating Conditions, IDD Specifications and Conditions, and Electrical Characteristics and AC Timing. Notes 1. All voltages referenced to VSS. 2. Tests for AC timing, IDD, and electrical, AC and DC characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Figure 5 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). 4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK, CK), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(AC) and VIH(AC). 5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e. the receiver effectively switches as a result of the signal crossing the AC input level, and remains in that state as long as the signal does not ring back above (below) the DC input LOW (HIGH) level). 6. For System Characteristics like Setup & Holdtime Derating for Slew Rate, I/O Delta Rise/Fall Derating, DDR SDRAM Slew Rate Standards, Overshoot & Undershoot specification and Clamp V-I characteristics see the latest Industry specification for DDR components. FIGURE 5 AC Output Load Circuit Diagram / Timing Reference Load Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 29 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 22 AC Operating Conditions Parameter Symbol Input High (Logic 1) Voltage, DQ, DQS and DM Signals Input Low (Logic 0) Voltage, DQ, DQS and DM Signals Input Differential Voltage, CK and CK Inputs Input Closing Point Voltage, CK and CK Inputs 1) 2) 3) 4) 5) VIH.AC VIL.AC VID.AC VIX.AC Values Min. Max. VREF + 0.31 -- Unit Note/ Test Condition VREF - 0.31 0.7 VDDQ + 0.6 0.5 x VDDQ- 0.2 0.5 x VDDQ+ 0.2 -- V 1)2)3) V 1)2)3) V 1)2)3)4) V 1)2)3)5) 0 C TA 70 C; VDD = VDDQ = 2.5 V 0.2 V Input slew rate = 1 V/ns. Inputs are not recognized as valid until VREF stabilizes. VID is the magnitude of the difference between the input level on CK and the input level on CK. The value of VIX is expected to equal 0.5 x VDDQ of the transmitting device and must track variations in the DC level of the same. TABLE 23 AC Timing - Absolute Specifications Parameter Symbol -5 -6 DDR400 DDR333 Min. Max. Min. Max. Unit Note/ Test Condition 1) DQ output access time from CK/CK tAC -0.7 +0.7 -0.7 +0.7 ns 2)3)4)5) CK high-level width tCH tCK 0.45 0.55 0.45 0.55 tCK 2)3)4)5) 5 8 6 12 ns CL = 3.0 2)3)4)5) 6 12 6 12 ns CL = 2.5 2)3)4)5) 7 12 7.5 12 ns CL = 2.0 2)3)4)5) 0.45 0.55 0.45 0.55 tCK tCK 2)3)4)5) Clock cycle time tCL Auto precharge write recovery + tDAL CK low-level width precharge time Min. : (tWR/tCK)+(tRP/tCK), Max. : -- 2)3)4)5)6) tDH tDIPW 0.4 -- 0.45 -- ns 2)3)4)5) 1.75 -- 1.75 -- ns 2)3)4)5)6) tDQSCK -0.6 +0.6 -0.6 +0.6 ns 2)3)4)5) DQS input low (high) pulse width tDQSL,H (write cycle) 0.35 -- 0.35 -- tCK 2)3)4)5) DQ and DM input hold time DQ and DM input pulse width (each input) DQS output access time from CK/CK DQS-DQ skew (DQS and associated DQ signals) tDQSQ -- +0.40 -- +0.45 ns TSOPII 2)3)4)5) DQS-DQ skew (DQS and associated DQ signals) tDQSQ -- +0.40 -- +0.40 ns TFBGA 2)3)4)5) Write command to 1st DQS latching transition tDQSS 0.72 1.25 0.75 1.25 tCK 2)3)4)5) DQ and DM input setup time tDS 0.4 -- 0.45 -- ns 2)3)4)5) Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 30 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Parameter Symbol -5 -6 DDR400 DDR333 Unit Note/ Test Condition 1) Min. Max. Min. Max. DQS falling edge hold time from tDSH CK (write cycle) 0.2 -- 0.2 -- tCK 2)3)4)5) DQS falling edge to CK setup time (write cycle) tDSS 0.2 -- 0.2 -- tCK 2)3)4)5) Clock Half Period tHP Min. (tCL, tCH) -- Min. (tCL, tCH) -- ns 2)3)4)5) Data-out high-impedance time from CK/CK tHZ -- +0.7 -- +0.7 ns 2)3)4)5)7) Address and control input hold time tIH 0.6 -- 0.75 -- ns fast slew rate 3)4)5)6)8) 0.7 -- 0.8 -- ns slow slew rate 3)4)5)6)8) Control and Addr. input pulse width (each input) tIPW Address and control input setup tIS time 2.2 -- 2.2 -- ns 2)3)4)5)9) 0.6 -- 0.75 -- ns fast slew rate 3)4)5)6)8) 0.7 -- 0.8 -- ns slow slew rate3)4)5)6)8) Data-out low-impedance time from CK/CK tLZ -0.7 +0.7 -0.7 +0.7 ns 2)3)4)5)7) Mode register set command cycle time tMRD 2 -- 2 -- tCK 2)3)4)5) DQ/DQS output hold time from DQS tQH tHP -tQHS -- tHP -tQHS -- ns 2)3)4)5) Data hold skew factor tQHS tQHS tRAP tRAS tRC -- +0.50 -- +0.55 ns TSOPII 2)3)4)5) -- +0.50 -- +0.50 ns TFBGA 2)3)4)5) tRCD -- tRCD -- ns 2)3)4)5) 40 70E+3 42 70E+3 ns 2)3)4)5) 55 -- 60 -- ns 2)3)4)5) tRCD tREFI 15 -- 18 -- ns 2)3)4)5) -- 7.8 -- 7.8 s 2)3)4)5)8) Auto-refresh to Active/Autorefresh command period tRFC 65 -- 72 -- ns 2)3)4)5) Precharge command period tRP tRPRE tRPST tRRD 15 -- 18 -- ns 2)3)4)5) 0.9 1.1 0.9 1.1 2)3)4)5) 0.40 0.60 0.40 0.60 tCK tCK 10 -- 12 -- ns 2)3)4)5) tWPRE Max. (0.25 x -- tCK, 1.5 ns) 0.25 x tCK -- ns 2)3)4)5) Data hold skew factor Active to Autoprecharge delay Active to Precharge command Active to Active/Auto-refresh command period Active to Read or Write delay Average Periodic Refresh Interval Read preamble Read postamble Active bank A to Active bank B command Write preamble Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 31 Date: 2007-12-13 2)3)4)5) Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Parameter Symbol -5 -6 DDR400 DDR333 Unit Note/ Test Condition 1) Min. Max. Min. Max. tWPRES tWPST tWR tWTR 0 -- 0 -- ns 2)3)4)5)10) 0.40 0.60 0.40 0.60 tCK 2)3)4)5)11) 15 -- 15 -- ns 2)3)4)5) 2 -- 1 -- tCK 2)3)4)5) Exit self-refresh to non-read command tXSNR 75 -- 75 -- ns 2)3)4)5) Exit self-refresh to read command tXSRD 200 -- 200 -- tCK 2)3)4)5) Write preamble setup time Write postamble Write recovery time Internal write to read command delay 1) 0 C TA 70 C; VDD = VDDQ = 2.5 V 0.2 V 2) Input slew rate 1 V/ns. 3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns. 4) Inputs are not recognized as valid until VREF stabilizes. 5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT. 6) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock cycle time. 7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ). 8) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured between VIH.AC and VIL.AC. 9) These parameters guarantee device timing, but they are not necessarily tested on each device. 10) The specific requirement is that DQS be valid (HIGH,LOW, or some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specificationsof the device. When no writes were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW at this time, depending on tDQSS. 11) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system performance (bus turnaround) degrades accordingly. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 32 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 24 IDD Conditions Parameter Symbol Operating Current: one bank; active/ precharge; tRC = tRCMIN; tCK = tCKMIN; DQ, DM, and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. IDD0 Operating Current: one bank; active/read/precharge; Burst = 4; Refer to the following page for detailed test conditions. IDD1 Precharge Power-Down Standby Current: all banks idle; power-down mode; CKE VILMAX; tCK = tCKMIN IDD2P IDD2F Precharge Floating Standby Current: CS VIHMIN, all banks idle; CKE VIHMIN; tCK = tCKMIN, address and other control inputs changing once per clock cycle, VIN = VREF for DQ, DQS and DM. Precharge Quiet Standby Current: CS VIHMIN, all banks idle; CKE VIHMIN; tCK = tCKMIN, address and other control inputs stable at VIHMIN or VILMAX; VIN=VREF for DQ, DQS and DM. IDD2Q Active Power-Down Standby Current: one bank active; power-down mode; CKE VILMAX; tCK= tCKMIN; VIN = VREF for DQ, DQS and DM. IDD3P Active Standby Current: one bank active; CS VIHMIN; CKE VIHMIN; tRC = tRASMAX; tCK = tCKMIN; DQ, DM and DQS IDD3N inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating Current: one bank active; Burst = 2; reads; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200 and DDR266A, CL = 3 for DDR333; tCK = tCKMIN; IOUT = 0 mA IDD4R Operating Current: one bank active; Burst = 2; writes; continuous burst; address and control inputs changing once per clock cycle; 50% of data outputs changing on every clock edge; CL = 2 for DDR200 and DDR266A, CL = 3 for DDR333; tCK = tCKMIN IDD4W Auto-Refresh Current: tRC = tRFCMIN, burst refresh IDD5 IDD6 IDD7 Self-Refresh Current: CKE 0.2 V; external clock on; tCK = tCKMIN Operating Current: four bank; four bank interleaving with BL = 4; Refer to the following page for detailed test conditions. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 33 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM TABLE 25 IDD Specification -6 -5 DDR333 DDR400 Unit Note 3) Symbol Typ. Max. Typ. Max. IDD0 60 70 60 75 mA x4/x8 4)1) 70 85 75 90 mA x16 1) 65 80 70 85 mA x4/x8 1) 80 95 90 110 mA x16 1) 1.1 4.6 1.1 4.6 mA 1) 21 25 25 30 mA 1) 15 22 17 23 mA 1) 11 15 12 16 mA 1) 32 37 35 42 mA x4/x8 1) 33 40 38 45 mA x16 1) 70 85 80 90 mA x4/x8 1) 95 115 110 135 mA x16 1) 75 90 85 95 mA x4/x8 1) 100 120 115 135 mA x16 1) 130 175 145 190 mA 1) 1.6 5 1.6 5 mA 2) - 2.5 - 2.5 mA Low power part - (L) 175 205 195 230 mA x4/x8 1) 190 230 210 250 mA x16 1) IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 IDD7 1) Input slew rate = 1 V/ns. 2) Enables on-chip refresh and address counters. 3) Test conditions for typical values: VDD = 2.5 V (DDR333), VDD = 2.6 V (DDR400), TA = 25 C, test conditions for maximum values: VDD = 2.7 V, TA = 10 C. 4) IDD specifications are tested after the device is properly initialized and measured at 166 MHz for DDR333, and 200 MHz for DDR400. Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 34 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 6 Package Outlines The package used for this product family. Notes 1. Drawing according to ISO 8015 2. Dimensions in mm 3. General tolerances +/- 0.15 FIGURE 6 -). '!5'% 0,!.% Package Outline P(G)-TSOPII-66 X - X -!8 X 3%!4).' 0,!.% -!8 )NDEX -ARKING $OES NOT INCLUDE PLASTIC OR METAL PROTRUSION OF MAX PER SIDE $OES NOT INCLUDE PLASTIC PROTRUSION OF MAX PER SIDE $OES NOT INCLUDE DAMBAR PROTRUSION OF MAX &0/?0? 43/0))? Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 35 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM FIGURE 7 Package Outline P-TFBGA-60 5 5 7 8 5 7 7 %!$&0%%1.+$%0"!++1'0%%-1.+$%0"!++1 !#*!'%.0)%-2!2).-,!0* !$3-)2,!0*)-' )$$+%.&/!#*!'%1%$'%1 3,,6/!$14)2(.32"!++ Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 36 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM FIGURE 8 Package Outline PG-TFBGA-60 5 5 7 8 5 7 7 %!$&0%%1.+$%0"!++1'0%%-1.+$%0"!++1 !#*!'%.0)%-2!2).-,!0* !$3-)2,!0*)-' )%1.02&)$3#)!+ )$$+%.&/!#*!'%1%$'%1 3,,6/!$14)2(.32"!++ .+$%0"!++$)!,%2%00%&%012./.120%&+.4#.-$)2)./0%0%&+.4$)!,%2%0)1 ,, Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 37 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM 7 Product Nomenclature For reference the Qimonda SDRAM component nomenclature is enclosed in this chapter. TABLE 26 Example for Nomenclature Fields Example for DDR SDRAM Field Number 1 2 3 4 5 6 7 8 HYB 25 D 512 80 0 D E 9 10 -4 TABLE 27 DDR Memory Components Field Description Values Coding 1 Qimonda Component Prefix HYB Memory components HYI Memory components, industrial temperature range (-40C - +85 C) 2 Interface Voltage [V] 25 2.5 V 3 DRAM Technology D Double Data Rate SDRAM 4 Component Density [Mbit] 64 64 Mbit 128 128 Mbit 256 256 Mbit 5 Number of I/Os 6 Product Variations 7 Die Revision 8 Package, Lead-Free Status 512 512 Mbit 40 x4 80 x8 16 x16 0 .. 9 look up table A First B Second C Third D Fourth C FBGA, lead containing E TSOP, lead- and halogen-free F FBGA, lead- and halogen-free T TSOP, lead containing 9 Power - Standard power product 10 Speed Grade -4 DDR500B -4A DDR500A Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 -5 DDR400B -5A DDR400A -6 DDR333B 38 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM List of Illustrations Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Pin Configuration TSOPII-66 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Configuration for x4 Organization, TFBGA-60, Top View . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Configuration for x8 Organization, TFBGA-60, Top View . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Configuration for x16 Organization, TFBGA-60, Top View . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Output Load Circuit Diagram / Timing Reference Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Outline P(G)-TSOPII-66. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Outline P-TFBGA-60 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Outline PG-TFBGA-60 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 39 Date: 2007-12-13 11 15 16 17 29 35 36 37 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Table 20 Table 21 Table 22 Table 23 Table 24 Table 25 Table 26 Table 27 Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ordering Information for RoHS Compliant Products. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Ordering Information for non RoHS Compliant Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations for Pin Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations for Buffer Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Abbreviations for Ball Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations for Buffer Type . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Mode Register Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Burst Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Extended Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Truth Table 1: Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Truth Table 2: DM Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Truth Table 3: Clock Enable (CKE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Truth Table 4: Current State Bank n - Command to Bank n (same bank) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Truth Table 5: Current State Bank n - Command to Bank m (different bank). . . . . . . . . . . . . . . . . . . . . . . . . . 24 Truth Table 6: Concurrent Auto Precharge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Input and Output Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Electrical Characteristics and DC Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 AC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 AC Timing - Absolute Specifications. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 IDD Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 IDD Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Example for Nomenclature Fields. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 DDR Memory Components. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 40 Date: 2007-12-13 Internet Data Sheet HY[B/I]25D512[40/80/16]0C[C/E/F/T](L) 512-Mbit Double-Data-Rate SDRAM Contents 1 1.1 1.2 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2 2.1 2.2 Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Configuration for TSOPII-66 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Configuration for TFBGA-60. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 3.1 3.1.1 3.2 Functional Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mode Register Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Burst Type. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Extended Mode Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Truth Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5 5.1 5.2 Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 7 Product Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Rev. 1.41, 2007-12 03292006-3TFJ-HNV3 41 Date: 2007-12-13 18 18 19 20 Internet Data Sheet Edition 2007-12 Published by Qimonda AG Gustav-Heinemann-Ring 212 D-81739 Munchen, Germany (c) Qimonda AG 2007. All Rights Reserved. Legal Disclaimer The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office. Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Qimonda Office. Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. www.qimonda.com Date: 2007-12-13