1/7
STTH1602C
February 2004 - Ed: 1
HIGH EFFICIENCY ULTRAFAST DIODE
®
Dual center tap rectifier suited for Switch Mode
Power Supplies and High frequency DC to DC
converters.
Packaged in TO-220AB, D2PAK, TO-220FPAB
and I2PAK, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection applications.
DESCRIPTION
Suited for SMPS
Low losses
Low forward and reverse recovery times
Low leakage current
High junction temperature
Insulated package: TO-220FPAB
FEATURES AND BENEFITS
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IF(RMS) RMS forward current 30 A
IF(AV) Average forward
current δ=0.5
TO-220AB / I2PAK /
D2PAK
Tc = 150°C Per diode 8A
Tc = 140°C Per device 16
Tc = 140°C Per diode 10
Tc = 130°C Per device 20
TO-220FPAB Tc = 130°C Per diode 8
Tc = 100°C Per device 16
Tc = 110°C Per diode 10
Tc = 75°C Per device 20
IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 80 A
Tstg Storage temperature range - 65 + 175 °C
Tj Maximum operating junction temperature 175 °C
ABSOLUTE RATINGS (limiting values, per diode)
IF(AV) Up to 2 x 10A
VRRM 200 V
Tj (max) 175 °C
VF(typ) 0.78 V
trr (typ) 21 ns
MAIN PRODUCT CHARACTERISTICS
A1
A2
K
I2PAK
STTH1602CR
A1
A2
K
TO-220AB
STTH1602CT
A1
A2
K
A1
A2
K
K
D2PAK
STTH1602CG
A1
A2
K
TO-220FPAB
STTH1602CFP
STTH1602C
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Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR*Reverse leakage
current
Tj = 25°C VR=V
RRM A
Tj = 125°C 460
VF** Forward voltage drop Tj = 25°C IF=8A 1.1 V
Tj = 25°C IF=16A 1.25
Tj = 150°C IF=8A 0.78 0.89
Tj = 150°C IF=16A 1.05
Pulse test: * tp = 5ms, δ<2%
** tp = 380µs, δ<2%
To evaluate the maximum conduction losses use the following equation :
P = 0.73 x IF(AV) + 0.020 IF2(RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
trr Reverse
recovery time
Tj = 25°C IF=1A V
R= 30V
dIF/dt = 100 A/µs
21 26 ns
IRM Reverse
recovery current
Tj = 125°C IF=8A V
R= 160V
dIF/dt = 200 A/µs
6.8 8.8 A
tfr Forward
recovery time
Tj = 25°C IF=8A dI
F/dt = 100 A/µs
VFR = 1.1 x VFmax
160 ns
VFP Forward
recovery voltage
Tj = 25°C IF=8A dI
F/dt = 100 A/µs 2.4 V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Maximum Unit
Rth (j-c) Junction to case TO-220AB / I2PAK / D2PAK Per diode 3.0 °C/W
Per device 1.9
TO-220FPAB Per diode 5.5
Per device 4.5
Rth (j-c) Coupling TO-220AB / I2PAK / D2PAK 0.8 °C/W
TO-220FPAB 3.5
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
THERMAL PARAMETERS
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0
10
20
30
40
50
60
70
80
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
I (A)
M
T
δ=tp/T tp
IM
P = 15W
P = 8W
P = 3W
δ
Fig. 1: Peak current versus duty cycle (per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V (V)
FM
I (A)
FM
T =25°C
j
T =150°C
j
Fig. 2-1: Forward voltage drop versus forward
current (typical values, per diode).
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Z/R
th(j-c) th(j-c)
Single pulse
t(s)
p
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
D2PAK, I2PAK).
10
100
0 50 100 150 200
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Fig. 4: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0
10
20
30
40
50
60
70
80
90
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
I (A)
FM
V (V)
FM
T =25°C
j
T =150°C
j
Fig. 2-2: Forward voltage drop versus forward
current (maximum values, per diode).
0.0
0.1
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Z/R
th(j-c) th(j-c)
Single pulse
t(s)
p
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
STTH1602C
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0
10
20
30
40
50
60
70
80
10 100 1000
t(ns)
rr
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =8A
F
V =160V
R
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
0
2
4
6
8
10
12
14
16
10 100 1000
I(A)
RM
dI /dt(A/µs)
F
T =25°C
j
T =125°C
j
I =8A
F
V =160V
R
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
IRM
Qrr
T (°C)
j
Q;
rr I [T ]/Q ;I [T =125°C]
RM j rr RM j
I =8A
F
V =160V
R
Fig. 8: Dynamic parameters versus junction
temperature.
0
10
20
30
40
50
60
70
80
02468101214161820
S(Cu)(cm²)
R (°C/W)
th(j-a)
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm) for D2PAK.
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
10 100 1000
Q (nC)
rr
dI /dt(A/µs)
F
I =8A
F
V =160V
R
T =125°C
j
T =25°C
j
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).
STTH1602C
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PACKAGE MECHANICAL DATA
D2PAK
A
C2
D
R
A2
M
V2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
8.90
3.70
1.30
5.08
16.90
10.30
FOOTPRINT DIMENSIONS (in millimeters)
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2
Ordering code Marking Package Weight Base qty Delivery mode
STTH1602CT STTH1602CT TO-220AB 2.23 g 50 Tube
STTH1602CG STTH1602CG D2PAK 1.48 g 50 Tube
STTH1602CG-TR STTH1602CG D2PAK 1.48 g 1000 Tape & reel
STTH1602CR STTH1602CR I2PAK 1.49 g 50 Tube
STTH1602CFP STTH1602CFP TO-220FPAB 1.70g 50 Tube
STTH1602C
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PACKAGE MECHANICAL DATA
I2PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
PACKAGE MECHANICAL DATA
TO-220FPAB
H
L3
L2
L4
L6
G
G1
F
F1
L5
D
E
L7
A
B
Dia
F2
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
STTH1602C
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
thorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2
F2
F1
E
M
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Epoxy meets UL94,V0
Cooling method: by conduction (method C)
Recommended torque value (TO-220AB): 0.8 N.m.
Maximum torque value (TO-220AB): 1.0 N.m.
Recommended torque value (TO-220FPAB): 0.55 N.m.
Maximum torque value (TO-220FPAB): 0.7 N.m.