©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
HGTG20N60C3D
45A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG20N60C3D is a MOS gated high voltage
s w it ching device co mbining the bes t feat ures of MO SFETs
and bipolar transistors. This device has th e high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies onl y moderately be tween 25oC and 150oC. The
IGBT used is de v e lopme nt type TA49178 . The diode used i n
anti-parallel with the IGBT is the RHRP3060 (TA49063).
The IGBT is ideal for many high volt ag e switc hi ng
applic ations operating at mod erate freq uencies w he r e lo w
conduction lo sses a re essen tial, such as: AC and D C motor
controls, power supplies and drivers for solenoids, relays
and contactors.
F ormerly dev elopmental type TA49179.
Symbol
Features
• 45A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC
• Short Circuit Rating
• Lo w Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG20N60C3D TO-247 G20N60C3D
NOTE: When ordering, use the entire part number.
C
E
G
G
C
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60C3D UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 45 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 300 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 20A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD164 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circ uit Withst and T i me (Not e 2) at V GE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs
Short Circ uit Withst and T i me (Not e 2) at V GE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUTION: S tresses ab ove those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a stress on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC--5.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110
VGE = 15V TC = 25oC-1.41.8V
TC = 150oC-1.51.9V
Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA, VCE = VGE 3.4 4.8 6.3 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG =
10Ω, VGE = 15V,
L = 100µH
VCE = 480V 120 - - A
VCE = 600V 20 - - A
Gate to Emitter Plateau Voltage VGEP ICE = IC110, VCE = 0.5 BVCES -8.4- V
On-State Gate Charge QG(ON) ICE = IC110
VCE = 0.5 BVCES VGE = 15V - 91 110 nC
VGE = 20V - 122 145 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 19)
-2832ns
Current Rise Time trI -2428ns
Current Turn-Off Delay Time td(OFF)I - 151 210 ns
Current Fall Time tfI -5598ns
Turn-On Energy EON - 500 550 µJ
Turn-Off Energy (Note 3 ) EOFF - 500 700 µJ
HGTG20N60C3D
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 1mH
Test Circuit (Figure 19)
-2832ns
Current Rise Time trI -2428ns
Current Turn-Off Delay Time td(OFF)I - 280 450 ns
Current Fall Time tfI - 108 210 ns
Turn-On Energy EON -1.01.1mJ
Turn-Off Energy (Note 3 ) EOFF -1.21.7mJ
Diode Forward Voltage VEC IEC = 20A - 1.5 1.9 V
Diode Reverse Recovery T ime trr IEC = 20A, dIEC/dt = 200A/µs--55ns
IEC = 2A, dIEC/dt = 200A/µs - 32 47 ns
Thermal Resistance Junction To Case RθJC IGBT - - 0.76 oC/W
Diode - - 1.2 oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn -Off Switching Lo ss. This t est method produces the true total Turn-Off Energy Loss.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT S
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
VGE = 15V
25 75 100 125 15
0
50
30
10
20
40
0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
60
70
0
40
0
ICE, COLLECT OR TO EMITTER CURRENT (A)
20
300 400200100 500 600
0
80
100
120
140 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH
HGTG20N60C3D
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT O R T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
fMAX , OPERATING FREQUENCY (kHz)
2
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
5
1
100
4
0
10 20
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.76oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
TCVGE
110oC10V
15V
75oC
110oC
75oC10V
15V
TJ = 150oC, RG = 10Ω,
L = 1mH, VCE = 480 V
VGE, GATE TO EMITTE R VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
2
4
6
8
150
200
250
300
350
tSC
ISC
10
12
14
400
450
VCE = 360V, RG = 10Ω, TJ = 125oC
02
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
84
80
60
40
100
61
0
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
TC = -55oC
TC = 150oC
TC = 25oC
ICE, COLLECTO R TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
150
200
250
300
023
0
50
14
100
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = 150oC
TC = 25oC
56
TC = -55oC
EON, TURN-ON ENERGY LOSS (mJ)
2.5
1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
2010 25
155
3.0
030 35 4
0
TJ = 25oC, TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, V GE = 10V
RG = 10Ω, L = 1mH, VCE = 480V
3.5
4.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
0
0.5
252010 155
1.0
2.5
2.0
1.5
30 35 4
0
3.0
TJ = 25oC; VGE = 10V OR 15V
TJ = 150oC; VGE = 10V OR 15V
RG = 10Ω, L = 1mH, VCE = 480V
HGTG20N60C3D
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECT OR T O
EMITTER CURRENT
FIGURE 11. TURN-OFF DELAY TIME vs COLLECT OR T O
EMITTER CURRENT FIGURE 12. F ALL TIME vs COLL ECT OR T O EMITT ER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
20 10 155
25
30
35
40
403020 3525
45
50 RG = 10Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 10V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RI SE TIME (ns)
25
0
50
75
125
100
150
10 1554
0
3020 3525
175
200
TJ = 25oC and TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, V GE = 10V
RG = 10Ω, L = 1mH, VCE = 480V
10 15 255
250
20
100
175
125
150
200
225
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN- OFF DELAY TIME (ns)
30 35 4
0
RG = 10Ω, L = 1mH, VCE = 480V
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
275
300
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
60
80
100
40
50
70
90
10 20 25515 30354
0
RG = 10Ω, L = 1mH, VCE = 480V
110
120
TJ = 150oC, VGE = 10V OR VGE = 15V
TJ = 25oC, VGE = 10V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
5789106VGE, GATE TO EMITTER VOLTAGE (V)
11
200
250
300
12 13 14 1
5
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
TC = 150oC
TC = 25oC
TC = -55oC
Qg, GATE CHARGE (nC)
0
8
10
6
4
2
01020 40
VGE, GATE TO EMITTER VOLTAGE (V)
50 10
0
30
12
14
16 IG (REF) = 1mA, RL = 15Ω, TC = 25oC
VCE = 400V
VCE = 200V
VCE = 600V
60 70 80 90
HGTG20N60C3D
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACITANCE (nF)
1
2
3
4
5
CIES
COES
CRES
FREQUENCY = 1MHz
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED THERMAL RESPONSE
10-3
10-2
10-1
100
10-5 10-3 10-2 10-1 100101
10-4
0.1
0.2
0.05
0.02
SINGLE PULSE t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.5
0.01
0.5 1.0 1.5 2.5 3.
0
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
02.0
20
0
40
60
80
100
10
30
50
70
90
TC = -55oC
TC = 25oC
TC = 150oC
35
25
15
5
tr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
510 30015
40
30
20
10
45
20 25
TC = 25oC, dIEC/dt = 200A/µstrr
ta
tb
HGTG20N60C3D
©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60C3D Rev. B
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capaci t ance is not discharged through
the device. With proper handl i n g and application procedures,
how ever, IGBTs are currently being extensiv ely us ed in
production by numerous equipment manufacturers in military,
industrial and consumer applica tions, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the foll owing basic precautions are taken:
1. Prior to assem b ly int o a circui t, all l eads s hould be k ept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or e quivalent.
2. When de vice s are remov ed by hand from thei r carriers,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. De vices sho uld n e v er b e ins erted into or remo v e d from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the gate- vol tage
rat ing of VGEM. Exceeding the ra ted VGE can result in
permanent damage to the oxide la yer in the gate regio n.
6. Gate Terminatio n - The gates of these de vi ces are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
v oltage buil dup on the input ca pac ito r due to leak age
currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Op erating frequen cy in formation f or a typ ic al device
(Figure 3) is presented as a gui de for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the inf o rmation s hown f or a ty pical un it in Figure s 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defin ed by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on -sta te tim e for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 20.
Device turn-off delay can establish a n addit io nal frequen cy
limitin g con diti on for an applic at ion other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allow able dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switchi ng and condu ction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses ( PC) are approx imated by
PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
Test Circuit and Waveforms
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS
RG = 10Ω
L = 1mH
VDD = 480V
+
-
HGTG20N60C3D
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG20N60C3D
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
