Data Sheet 1 05.99
SIPMOS Small-Signal-Transistor
Product Summary
Drain source voltage
V
DS 60 V
Drain-Source on-state resistance
R
DS
(
on
)
0.12 Ω
Continuous drain current
I
D2.9 A
Features
• N channel
• Enhancement mode
• Avalanche rated
• d
v
/d
t
rated
VPS05163
1
23
4
Type Package Ordering Code
BSP320S SOT-223 Q67000-S4001
Pin 1 Pin 2/4 Pin 3
G D S
Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified
Parameter Symbol UnitValue
A
I
D2.9Continuous drain current
Pulsed drain current
T
A = 25 ˚C
I
Dpulse 11.6
E
AS 60Avalanche energy, single pulse
I
D = 2.9 A,
V
DD = 25 V,
R
GS = 25 ΩmJ
A2.9
I
AR
Avalanche current,periodic limited by
T
j
max
Avalanche energy, periodic limited by
T
j
max 0.18
E
AR mJ
d
v
/d
t
6
Reverse diode d
v
/d
t
I
S = 2.9 A,
V
DS = 20 V, d
i
/d
t
= 200 A/µs,
T
jmax = 150 ˚C
kV/µs
VGate source voltage
V
GS ±20
Power dissipation
T
A = 25 ˚C
P
tot 1.8 W
Operating temperature
T
j
-55 ... +150 ˚C
Storage temperature
T
st
g
-55 ... +150
IEC climatic category; DIN IEC 68-1 55/150/56
BSP 320S
BSP 320S
Data Sheet 2 05.99
Electrical Characteristics
Parameter Symbol Values Unit
at
T
j = 25 ˚C, unless otherwise specified min. typ. max.
Thermal Characteristics
Thermal resistance,
junction - soldering point (Pin 4)
R
thJS - 17 - K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
R
thJA
-
-
110
-
-
70
K/W
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA
V
(BR)DSS 60 - - V
Gate threshold voltage,
V
GS =
V
DS
I
D = 20 µA
V
GS(th) 2.1 3 4
Zero gate voltage drain current
V
DS = 60 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 60 V,
V
GS = 0 V,
T
j = 150 ˚C
I
DSS
-
-
0.1
-
1
100
µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 2.9 A
R
DS(on) - 0.09 0.12 Ω
1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
BSP 320S
Data Sheet 3 05.99
Electrical Characteristics
Parameter Symbol Values Unit
at
T
j
= 25 ˚C, unless otherwise specified min. typ. max.
Dynamic Characteristics
g
fs 2.5 -5.8Transconductance
V
DS≥2*
I
D*
R
DS(on)max ,
I
D = 2.9 A S
C
iss - 340 pF275Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 90Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz 120
C
rss - 50 65Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
t
d(on) - 1711Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 2.9 A,
R
G = 33 Ω
ns
t
r- 4025Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 2.9 A,
R
G = 33 Ω
t
d(off) - 25Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 2.9 A,
R
G = 33 Ω
40
t
f- 35 55Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 2.9 A,
R
G = 33 Ω
BSP 320S
Data Sheet 4 05.99
Electrical Characteristics
Parameter Symbol Values Unit
at
T
j
= 25 ˚C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Gate charge at threshold
V
DD = 40 V,
I
D = 0.1 A,
V
GS = 1 V
Q
G(th) - 0.25 0.3 nC
Gate charge at
V
gs=7V
V
DD = 40 V,
I
D = 2.9 A,
V
GS = 0 to 7 V
Q
g(7) 9.3 nC7.4-
Gate charge total
V
DD = 40 V,
I
D = 2.9 A,
V
GS = 0 to 10 V
Q
g
- 9.7 12
Gate plateau voltage
V
DD = 40 V,
I
D = 2.9 A
V
(plateau) - 4.7 - V
Reverse Diode
Inverse diode continuous forward current
T
A = 25 ˚C
I
S- 2.9 A-
I
SM - 11.6Inverse diode direct current,pulsed
T
A = 25 ˚C -
-Inverse diode forward voltage
V
GS = 0 V,
I
F = 5.8 A 0.95 1.2 V
V
SD
Reverse recovery time
V
R = 30 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs - 45 ns56
t
rr
Reverse recovery charge
V
R = 30 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs
Q
rr - 0.08 0.12 µC
BSP 320S
Data Sheet 5 05.99
Power Dissipation
P
tot =
f
(TA)
0 20 40 60 80 100 120 ˚C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
1.9 BSP320S
P
tot
Drain current
I
D =
f
(
T
A)
0 20 40 60 80 100 120 ˚C 160
TA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
A
3.2 BSP320S
I
D
Transient thermal impedance
Z
thJA =
f
(tp)
parameter :
D =
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP320S
Z
thJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 ˚C
10 -1 10 0 10 1 10 2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSP320S
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p = 130.0µs
BSP 320S
Data Sheet 6 05.99
Typ. output characteristics
I
D =
f
(
V
DS)
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
A
7.0 BSP320S
I
D
V
GS [V]
a
a 4.0
b
b 4.5
cc 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 2W
l 20.0
Drain-source on-resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = 2.9 A,
V
GS = 10 V
-60 -20 20 60 100 ˚C 180
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
Ω
0.30 BSP320S
R
DS(on)
typ
98%
BSP 320S
Data Sheet 7 05.99
Typ. transfer characteristics
I
D=
f
(
V
GS )
parameter:
t
p = 80 µs
V
DS≥ 2 x
I
D x
R
DS(on)max
012345V7
V
GS
0
2
4
6
8
10
A
14
I
D
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter :
V
GS =
V
DS,
I
D = 20 µA
-60 -20 20 60 100 140 V200
T
j
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
V
5.2
V
GS(th)
min
typ
max
Typ. capacitances
C
= f(
V
DS)
Parameter:
V
GS=0 V,
f
=1 MHz
0 5 10 15 20 25 V35
V
DS
1
10
2
10
3
10
pF
C
C
is
C
o
s
C
r
s
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSP320S
I
F
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BSP 320S
Data Sheet 8 05.99
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D puls =2.9A
0 2 4 6 8 10 12 nC 15
Q
Gate
0
2
4
6
8
10
12
V
16 BSP320S
V
GS
DS max
V
0,8
DS max
V
0,2
Avalanche Energy
E
AS =
f
(
T
j)
parameter:
I
D = 2.9 A,
V
DD = 25 V
R
GS = 25 Ω
20 40 60 80 100 120 ˚C 160
T
j
0
5
10
15
20
25
30
35
40
45
50
55
mJ
65
E
AS
Drain-source breakdown voltage
V
(BR)DSS = f
(
T
j
)
-60 -20 20 60 100 ˚C 180
T
j
54
56
58
60
62
64
66
68
V
72 BSP320S
V
(BR)DSS
