SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS M1FS4 Case :M1F 40V 1.33A FEATURES Small SMT Tj150 Low VF=0.45V PRRSM avalanche guaranteed APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommuniction RATINGS Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=25@ On alumina substrate Peak Surge Forward Current Repetitive Peak Surge Reverse Power I FSM PRRSM 50Hz sine wave, R-load Ta=25@ On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Pulse width 10Es, Tj=25 Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions Forward Voltage VF I F=1.1A, Pulse measurement Reverse Current IR VR=VRM , Pulse measurement Junction Capacitance Cj f=1MHz, VR=10V AEjl junction to lead Thermal Resistance AEja junction to ambient@ On alumina substrate junction to ambient@ On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55150 150 40 45 1.33 0.87 30 60 Unit V V A Ratings Max.0.55 Max.0.8 Typ.50 Max.20 Max.108 Max.186 Unit V mA pF A W /W M1FS4 Forward Voltage 10 Forward Current IF [A] Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 10 0.1 100 10 Junction Capacitance Reverse Voltage VR [V] 1 M1FS4 f=1MHz Tl=25C TYP M1FS4 Reverse Current 1000 100 Tl=150C [MAX] Reverse Current IR [mA] Tl=150C [TYP] 10 Tl=125C [TYP] Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 Reverse Voltage VR [V] 50 60 M1FS4 Reverse Power Dissipation Reverse Power Dissipation PR [W] 2 DC D=0.05 1.5 0.1 0.2 0.3 1 0.5 0.5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T M1FS4 Forward Power Dissipation 1.6 Forward Power Dissipation PF [W] 1.4 DC D=0.8 1.2 0.5 1 0.3 0.2 0.05 0.8 SIN 0.1 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T M1FS4 Derating Curve Average Rectified Forward Current IO [A] 2.4 DC 2 Alumina substrate Soldering land 2mmx2mm Conductor layer 20m Substrate thickness 0.64mm D=0.8 1.6 0.5 SIN 1.2 0.3 0.2 0.8 0.1 0.05 0.4 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V IO 0 0 VR tp D=tp /T T M1FS4 Derating Curve Average Rectified Forward Current IO [A] 1.6 DC 1.4 Glass-epoxy substrate Soldering land 2mmx2mm Conductor layer 35m D=0.8 1.2 0.5 1 SIN 0.8 0.3 0.2 0.6 0.1 0.4 0.05 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V IO 0 0 VR tp D=tp /T T M1FS4 Peak Surge Forward Capability IFSM 50 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=25C before surge current is applied Peak Surge Forward Current IFSM [A] 40 30 20 10 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP x VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10s) Ratio 10 1 0.1 1 10 100 Pulse Width t p [s] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP x VRP