STPS120MF Power Schottky rectifier in flat package Features A Very low profile package: 0.85 mm Backward compatible with standard STmite footprint Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance IF(AV) 1A Avalanche capability specified VRRM 20 V Hologen free molding compound Tj (max) 150 C VF (max) 0.41 V K STmite flat (DO222-AA) Table 1. Device summary Description Single Schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. Packaged in STmite flat, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the very small size of the package this device fits battery powered equipment (cellular, notebook, PDA's, printers) as well as chargers and PCMCIA cards. May 2008 Rev 1 1/7 www.st.com Characteristics 1 STPS120MF Characteristics Table 2. Absolute ratings (limiting values) Symbol Value Unit VRRM Repetitive peak reverse voltage 20 V IF(RMS) Forward current rms 2 A IF(AV) Average forward current Tc = 140 C = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 1 s Tj = 25 C 1400 W -65 to + 150 C 150 C 10000 V/s Tstg Storage temperature range Tj Maximum operating junction dV/dt 1. Parameter dPtot --------------dTj temperature(1) Critical rate of rise of reverse voltage (rated VR, Tj = 25 C) 1 - condition to avoid thermal runaway for a diode on its own heatsink < ------------------------Rth ( j - a ) Table 3. Thermal resistance Symbol Rth(j-c) Rth(j-a)(1) Parameter Value Unit Junction to case 20 C/W Junction to ambient 250 C/W 1. Mounted with minimum recommended pad size, PC board FR4 Table 4. Symbol Static electrical characteristics Parameter Test conditions Tj = 25 C Tj = 100 C IR(1) Reverse leakage current Tj = 25 C Tj = 100 C Tj = 25 C Tj = 100 C Tj = 25 C VF(1) Forward voltage drop Tj = 100 C Tj = 25 C Tj = 100 C VR = VRRM VR = 10 V VR = 5 V IF = 1 A Typ. Max. 1.3 3.9 275 850 0.6 2.0 145 450 0.4 10. 105 300 0.44 0.49 0.36 0.41 0.48 0.54 0.42 0.48 Unit A V IF = 2 A 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF2(RMS) 2/7 Min. STPS120MF Figure 1. 0.6 Characteristics Conduction losses versus average Figure 2. current PF(AV)(W) 1.2 =0.1 0.5 =0.5 =0.2 Average forward current versus ambient temperature ( = 0.5) IF(AV)(A) 1.1 =1 Rth(j-a)=Rth(j-c) 1.0 =0.05 0.9 0.4 0.8 0.7 0.3 0.6 Rth(j-a)=250C/W 0.5 0.2 0.4 0.3 T 0.1 0.2 IF(AV)(A) =tp/T Tamb(C) 0.1 tp 0.0 0.0 0.0 0.1 Figure 3. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 Normalized avalanche power derating versus pulse duration 25 Figure 4. PARM(tp) PARM(1 s) 50 75 100 125 150 Normalized avalanche power derating versus junction temperature PARM(Tj) PARM(25 C) 1 1.2 0.1 0.8 1 0.6 0.4 0.01 0.2 Tj(C) tp(s) 0.001 0.01 Figure 5. 0.1 1 0 10 100 25 1000 Non repetitive surge peak forward current versus overload duration (maximum values) IM(A) Figure 6. 1.0 6 50 75 100 125 150 Relative variation of thermal impedance junction to ambient versus pulse duration Zth(j-a)/Rth(j-a) 0.9 5 0.8 0.7 4 0.6 Ta=25C 0.5 3 Ta=75C 2 1 0.4 0.3 Ta=125C IM t =0.5 0.1 t(s) Single pulse tp(s) 0.0 0 1.E-03 0.2 1.E-02 1.E-01 1.E+00 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 3/7 Characteristics Figure 7. 1.E+01 STPS120MF Reverse leakage current versus reverse voltage applied (typical values) Figure 8. IR(mA) Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mV Tj=25C Tj=150C 1.E+00 Tj=125C 1.E-01 Tj=100C 100 Tj=75C 1.E-02 Tj=50C 1.E-03 VR(V) Tj=25C VR(V) 10 1.E-04 0 Figure 9. 2 4 6 8 10 12 14 16 18 0 20 Forward voltage drop versus forward current (low level) 2 4 6 8 10 12 14 16 18 20 Figure 10. Forward voltage drop versus forward current (high level) IFM(A) IFM(A) 100.0 2.0 1.8 1.6 Tj=100C (Maximum values) 1.4 Tj=100C (Maximum values) 10.0 1.2 Tj=100C (Typical values) 1.0 Tj=25C (Maximum values) Tj=100C (Typical values) 0.8 1.0 Tj=25C (Maximum values) 0.6 0.4 0.2 VFM(V) VFM(V) 0.0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Figure 11. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35 m, typical values) 250 Rth(j-a)(C/W) 225 200 175 150 125 100 75 50 25 S(cm) 0 0.0 4/7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 STPS120MF 2 Package information Package information Epoxy meets UL94, V0 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com. Table 5. STmite flat dimensions Dimensions Ref. L E1 D L1 Inches Min. Typ. Max. Min. Typ. Max. A 0.80 0.85 0.95 0.031 0.033 0.037 b 0.40 0.55 0.65 0.016 0.022 0.026 b2 0.70 0.85 1.00 0.027 0.033 0.039 L2 b b2 L3 E Millimeters c A c 0.10 0.15 0.25 0.004 0.006 0.009 D 1.75 1.90 2.05 0.069 0.075 0.081 E 3.60 3.80 3.90 0.142 0.150 0.154 E1 2.80 2.95 3.10 0.110 0.116 0.122 L 0.50 0.55 0.80 0.020 0.022 0.031 L1 2.10 2.40 2.60 0.083 0.094 0.102 L2 0.45 0.60 0.75 0.018 0.024 0.030 L3 0.20 0.35 0.50 0.008 0.014 0.020 Figure 12. STmite flat recommended footprint (all dimensions in mm) 0.85 0.63 2.00 0.65 0.65 0.95 1.95 4.13 5/7 Ordering information 3 Ordering information Table 6. 4 Ordering information Order code Marking Package Weight Base qty Delivery mode STPS120MF F12 STmite flat 16 mg 12000 Tape and reel Revision history Table 7. 6/7 STPS120MF Document revision history Date Revision 15-May-2008 1 Changes First issue. STPS120MF Please Read Carefully: Information in this document is provided solely in connection with ST products. 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