08/30/11
AUIRFR2407
HEXFET® Power MOSFET
www.irf.com 1
PD - 97689A
AUTOMOTIVE GRADE
GDS
Gate Drain Source
D-Pak
AUIRFR2407
G
S
D
Features
lAdvanced Planar Technology
lLow On-Resistance
Dynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed
up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified*
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, VGS @ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
––– 1.4
R
θJA
Junction-to-Ambient (PCB Mount)
i
––– 50 °C/W
R
θJA
Junction-to-Ambient ––– 110
-55 to + 175
300
110
0.71
± 20
Max.
42
29
170
5.0
11
130
25
V
(BR)DSS
75V
R
DS(on)
typ. 21.8mΩ
max 26m
Ω
I
D (Silicon Limited)
42A
S
D
G
AUIRFR2407
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Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.42mH
RG = 25Ω, IAS = 25A.
ISD 25A, di/dt 290A/μs, VDD V(BR)DSS,
TJ 175°C.
Pulse width 300μs; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
Rθ is measured at TJ of approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.078
–––
V/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
21.8
26.0
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
27
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Q
g
Total Gate Charge
–––
74
110
Q
gs
Gate-to-Source Charge
–––
13
19
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
22
34
t
d(on)
Turn-On Delay Time
–––
16
–––
t
r
Rise Time
–––
90
–––
t
d(off)
Turn-Off Delay Time
–––
65
–––
ns
t
f
Fall Time
–––
66
–––
L
D
Internal Drain Inductance
–––
4.5
–––
Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
C
iss
Input Capacitance
–––
2400
–––
C
oss
Output Capacitance
–––
340
–––
pF
C
rss
Reverse Transfer Capacitance
–––
77
–––
C
oss
Output Capacitance
–––
15700
–––
C
oss
Output Capacitance
–––
220
–––
C
oss
eff.
Effective Output Capacitance
g
–––
220
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
I
S
Continuous Source Current
–––
–––
42
(Body Diode) A
I
SM
Pulsed Source Current
–––
–––
170
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
100
150
ns
Q
rr
Reverse Recovery Charge
–––
400
600
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
mΩ
V
DS
= 25V
Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
DS
= 25V, I
D
= 25A
f
I
D
= 25A
V
DS
= 60V
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V
f
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
V
DD
= 38V
I
D
= 25A
R
G
= 6.8
Ω
Conditions
V
GS
= 10V
f
V
GS
= 0V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 25A
f
T
J
= 25°C, I
F
= 25A
di/dt = 100A/μs
f
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
AUIRFR2407
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
D-Pak MSL1
RoHS Compliant Yes
ESD
Machine Model Class M4 (+/- 500V)
†††
AEC-Q101-002
Human Body Model Class H1C (+/- 2000V)
†††
AEC-Q101-001
Charged Device
Model
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
AUIRFR2407
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25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
ID, Drain Current (A)
Fig 9. Maximum Drain Current Vs.
Case Temperature
AUIRFR2407
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AUIRFR2407
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D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D-Pak Part Marking Information
AUFR2407
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
Part Number
IR Logo
Lot Code
AUIRFR2407
10 www.irf.com
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFR2407
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Ordering Information
Base part
number
Package Type Standard Pack Complete Part Number
Form
Quantity
AUIRFR2407
Dpak
75
AUIRFR2407
Tape and Reel
2000
AUIRFR2407TR
Tape and Reel Left
3000
AUIRFR2407TRL
Tape and Reel Right
3000
AUIRFR2407TRR
AUIRFR2407
12 www.irf.com
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