APT14050JVFR 23A 0.500 1400V POWER MOS V (R) S S FREDFET Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP (R) * Fast Recovery Body Diode * Avalanche Energy Rated * Lower Leakage * Popular SOT-227 Package D G * Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT14050JVFR UNIT 1400 Volts Drain-Source Voltage 23 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 694 Watts Linear Derating Factor 5.56 W/C VGSM PD TJ,TSTG 92 L A C I N H C N E T O I E T C MA N A OR V AD INF -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 23 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3600 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1400 Volts 23 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.500 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7259 Rev - 9-2002 Symbol DYNAMIC CHARACTERISTICS Symbol APT14050JVFR Characteristic Test Conditions MIN TYP Ciss Input Capacitance VGS = 0V 14000 Coss Output Capacitance VDS = 25V 1100 Crss Reverse Transfer Capacitance f = 1 MHz 575 Qg Total Gate Charge VGS = 10V 775 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) tr t d(off) tf 3 L A C I N H C N E T O I E T C MA N A OR V AD INF VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 60 380 VGS = 15V 20 Turn-on Delay Time Rise Time Turn-off Delay Time VDD = 0.5 VDSS 18 ID = ID [Cont.] @ 25C 110 RG = 0.6 20 Fall Time MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions ISM Pulsed Source Current VSD Diode Forward Voltage dv/ dt MIN TYP Continuous Source Current (Body Diode) Peak Diode Recovery 1 (Body Diode) 2 dv/ dt MAX 23 92 UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 300 Tj = 125C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 1.8 Tj = 125C 7.4 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 16 Tj = 125C 30 ns C Amps THERMAL / PACKAGE CHARACTERISTICS Symbol Characteristic MIN TYP 0.18 RJC Junction to Case RJA Junction to Ambient 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 2500 SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source ISOTOP(R) is a Registered Trademark of SGS Thomson. Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 C/W lb*in 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 13.61mH, R = 25, Peak I = 23A j G L 5 I - -I [Cont.], di/ = 700A/s, V S D DD - VDSS, Tj - 150C, RG = 2.0, dt VR = 200V 7.8 (.307) 8.2 (.322) UNIT Volts 13 APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7259 Rev - 9-2002 MAX 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058