MICROWAVE POWER GaAs FET TIM7785-30SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level HIGH POWER P1dB=45.0dBm at 7.7GHz to 8.5GHz HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Gain Compression Point P1dB Power Gain at 1dB Gain Compression Point G1dB Drain Current IDS1 Gain Flatness ( Ta= 25C ) CONDITIONS UNIT MIN. TYP. MAX. dBm 44.5 45.0 dB 5.0 6.0 A 7.0 8.0 G dB 0.8 Power Added Efficiency add % 3rd Order Intermodulation Distortion IM3 Two-Tone Test Po=34.5dBm dBc -42 34 -45 Drain Current IDS2 (Single Carrier Level) A 7.0 8.0 Channel Temperature Rise Tch (VDS X IDS + Pin - P1dB) C 100 UNIT MIN. TYP. MAX. mS 6300 V -1.0 -2.5 -4.0 A 18 V -5 C/W 1.0 1.3 VDS=10V f = 7.7 to 8.5GHz X Rth(c-c) Recommended Gate Resistance(Rg): 28 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 10A VDS= 3V IDS= 100mA VDS= 3V VGS= 0V IGS= -350A Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jun. 2006 TIM7785-30SL ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 20 Total Power Dissipation (Tc= 25 C) PT W 115.4 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM7785-30SL RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=10V 47 IDS7.0A Pin=39.0dBm 46 45 44 7.7 7.9 8.1 8.3 8.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) freq.=8.5GHz VDS=10V 46 IDS7.0A 80 Pout 44 60 50 42 40 add 30 40 20 10 34 36 38 Pin(dBm) 3 40 add(%) Pout(dBm) 70 TIM7785-30SL Power Dissipation(PT) vs. Case Temperature(Tc) 120 PT(W) 100 80 60 40 20 0 40 80 120 160 200 Tc( C ) IM3 vs. Output Power Characteristics -10 VDS=10V IDS7.0A -20 freq.=8.5GHz f=5MHz IM3(dBc) -30 -40 -50 -60 30 32 34 36 Pout(dBm) @Single carrier level 4 38 40