MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM7785-30SL
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION HIGH GAIN
IM3=-45 dBc at Po= 34.5 dBm, G1dB=6.0dB at 7.7GHz to 8.5GHz
Single Carrier Level BROAD BAND INTERNALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=45.0dBm at 7.7GHz to 8.5GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 44.5 45.0 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 5.0 6.0 ⎯
Drain Current IDS1 A ⎯ 7.0 8.0
Gain Flatness ΔG dB ⎯ ⎯ ±0.8
Power Added Efficiency ηadd
VDS=10V
f = 7.7 to 8.5GHz
% ⎯ 34 ⎯
3rd Order Intermodulation
Distortion IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=34.5dBm
(Single Carrier Level) A ⎯ 7.0 8.0
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 100
Recommended Gate Resistance(Rg): 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 10A mS ⎯ 6300 ⎯
Pinch-off Voltage VGSoff VDS= 3V
IDS= 100mA V -1.0 -2.5 -4.0
Saturated Drain Current IDSS VDS= 3V
VGS= 0V A ⎯ 18 ⎯
Gate-Source Breakdown
Voltage VGSO IGS= -350μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 1.0 1.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2006
TIM7785-30SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 20
Total Power Dissipation (Tc= 25 °C) PT W 115.4
Channel Temperature Tch °C 175
Storage Tstg °C -65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time s hould not exceed 10 seconds
at 260°C.
2
TIM7785-30SL
RF PERFORMANCE
Output Power (Pout) vs. Frequency
47
46
45
44
VDS=10V
IDS≅7.0A
Pin=39.0dBm
7.7 7.9 8.1 8.3 8.5
Pout(dBm)
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=8.5GHz
VDS=10V
IDS≅7.0A
Pout
46
3
ηadd
Pin(dBm)
ηadd(%)
44
42
40
80
70
60
50
40
30
20
10
34 36
38 40
Pout(dBm)
TIM7785-30SL
Power Dissipation(PT) vs. Case Temperature(Tc)
4
120
100
80
60
40
20
PT(W)
Tc( °C )
IM3 vs. Output Power Characteristics
VDS=10V
IDS≅7.0A
freq.=8.5GHz
Δf=5MHz
40 80 120 160
200
32 34 36 38 40
0
30
-10
-20
-30
-40
-60
-50
IM3(dBc)
Pout(dBm) @Single carrier level