W25Q80BV
Publication Release Date: April 23, 2012
- 1 - Revision F
8M-BIT
SERIAL FLASH MEMORY WITH
DUAL AND QUAD SPI
W25Q80BV
- 2 -
Table of Contents
1. GENERAL DESCRIPTION ............................................................................................................... 5
2. FEATURES ....................................................................................................................................... 5
3. PACKAGE TYPES AND PIN CONFIGURATIONS ........................................................................... 6
3.1 Pin Configuration SOIC / VSOP 150 / 208-mil ..................................................................... 6
3.2 Pad Configuration WSON 6x5-mm / USON 2x3-mm ........................................................... 6
3.3 Pin Configuration PDIP 300-mil ............................................................................................ 7
3.4 Pin Description SOIC, VSOP, WSON, USON & PDIP 300-mil ............................................ 7
3.5 Ball Configuration TFBGA 8x6-mm ...................................................................................... 8
3.6 Ball Description TFBGA 8x6-mm ......................................................................................... 8
4. PIN DESCRIPTIONS ........................................................................................................................ 9
4.1 Chip Select (/CS) .................................................................................................................. 9
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3) ..................................... 9
4.3 Write Protect (/WP) .............................................................................................................. 9
4.4 HOLD (/HOLD) ..................................................................................................................... 9
4.5 Serial Clock (CLK) ................................................................................................................ 9
5. BLOCK DIAGRAM .......................................................................................................................... 10
6. FUNCTIONAL DESCRIPTION ....................................................................................................... 11
6.1 SPI OPERATIONS ............................................................................................................. 11
6.1.1 Standard SPI Instructions ..................................................................................................... 11
6.1.2 Dual SPI Instructions ............................................................................................................ 11
6.1.3 Quad SPI Instructions ........................................................................................................... 11
6.1.4 Hold Function ....................................................................................................................... 11
6.2 WRITE PROTECTION ....................................................................................................... 12
6.2.1 Write Protect Features ......................................................................................................... 12
7. CONTROL AND STATUS REGISTERS ......................................................................................... 13
7.1 STATUS REGISTER .......................................................................................................... 13
7.1.1 BUSY .................................................................................................................................... 13
7.1.2 Write Enable Latch (WEL) .................................................................................................... 13
7.1.3 Block Protect Bits (BP2, BP1, BP0) ...................................................................................... 13
7.1.4 Top/Bottom Block Protect (TB) ............................................................................................. 13
7.1.5 Sector/Block Protect (SEC) .................................................................................................. 13
7.1.6 Complement Protect (CMP) .................................................................................................. 14
7.1.7 Status Register Protect (SRP1, SRP0) ................................................................................. 14
7.1.8 Erase/Program Suspend Status (SUS) ................................................................................ 14
7.1.9 Security Register Lock Bits (LB3, LB2, LB1) ........................................................................ 14
7.1.10 Quad Enable (QE) .............................................................................................................. 15
7.1.11 Status Register Memory Protection (CMP = 0) ................................................................... 16
7.1.12 Status Register Memory Protection (CMP = 1) ................................................................... 17
W25Q80BV
Publication Release Date: Augest 01, 2012
- 3 - Revision G
7.2 INSTRUCTIONS ................................................................................................................. 18
7.2.1 Manufacturer and Device Identification ................................................................................ 18
7.2.2 Instruction Set Table 1 (Erase, Program Instructions) .......................................................... 19
7.2.3 Instruction Set Table 2 (Read Instructions) .......................................................................... 20
7.2.4 Instruction Set Table 3 (ID, Security Instructions) ................................................................ 21
7.2.5 Write Enable (06h) ............................................................................................................... 22
7.2.6 Write Enable for Volatile Status Register (50h) .................................................................... 22
7.2.7 Write Disable (04h) ............................................................................................................... 23
7.2.8 Read Status Register-1 (05h) and Read Status Register-2 (35h) ........................................ 24
7.2.9 Write Status Register (01h) .................................................................................................. 24
7.2.10 Read Data (03h) ................................................................................................................. 26
7.2.11 Fast Read (0Bh) ................................................................................................................. 27
7.2.12 Fast Read Dual Output (3Bh) ............................................................................................. 28
7.2.13 Fast Read Quad Output (6Bh) ............................................................................................ 29
7.2.14 Fast Read Dual I/O (BBh) ................................................................................................... 30
7.2.15 Fast Read Quad I/O (EBh) ................................................................................................. 32
7.2.16 Word Read Quad I/O (E7h) ................................................................................................ 34
7.2.17 Octal Word Read Quad I/O (E3h) ....................................................................................... 36
7.2.18 Set Burst with Wrap (77h) .................................................................................................. 38
7.2.19 Continuous Read Mode Bits (M7-0) ................................................................................... 39
7.2.20 Continuous Read Mode Reset (FFh or FFFFh) .................................................................. 39
7.2.21 Page Program (02h) ........................................................................................................... 40
7.2.22 Quad Input Page Program (32h) ........................................................................................ 41
7.2.23 Sector Erase (20h) ............................................................................................................. 42
7.2.24 32KB Block Erase (52h) ..................................................................................................... 43
7.2.25 64KB Block Erase (D8h) ..................................................................................................... 44
7.2.26 Chip Erase (C7h / 60h) ....................................................................................................... 45
7.2.27 Erase / Program Suspend (75h) ......................................................................................... 46
7.2.28 Erase / Program Resume (7Ah) ......................................................................................... 47
7.2.29 Power-down (B9h) .............................................................................................................. 48
7.2.30 Release Power-down / Device ID (ABh) ............................................................................. 49
7.2.31 Read Manufacturer / Device ID (90h) ................................................................................. 51
7.2.32 Read Manufacturer / Device ID Dual I/O (92h) ................................................................... 52
7.2.33 Read Manufacturer / Device ID Quad I/O (94h) ................................................................. 53
7.2.34 Read Unique ID Number (4Bh)........................................................................................... 54
7.2.35 Read JEDEC ID (9Fh) ........................................................................................................ 55
7.2.36 Read SFDP Register (5Ah) ................................................................................................ 56
7.2.37 Erase Security Registers (44h) ........................................................................................... 57
7.2.38 Program Security Registers (42h) ...................................................................................... 58
7.2.39 Read Security Registers (48h) ........................................................................................... 59
8. ELECTRICAL CHARACTERISTICS ............................................................................................... 60
8.1 Absolute Maximum Ratings ................................................................................................ 60
W25Q80BV
- 4 -
8.2 Operating Ranges............................................................................................................... 60
8.3 Power-up Timing and Write Inhibit Threshold .................................................................... 61
8.4 DC Electrical Characteristics .............................................................................................. 62
8.5 AC Measurement Conditions .............................................................................................. 63
8.6 AC Electrical Characteristics .............................................................................................. 64
8.7 AC Electrical Characteristics (cont’d) ................................................................................. 65
8.8 Serial Output Timing ........................................................................................................... 66
8.9 Serial Input Timing .............................................................................................................. 66
8.10 HOLD Timing ...................................................................................................................... 66
8.11 WP Timing .......................................................................................................................... 66
9. PACKAGE SPECIFICATION .......................................................................................................... 67
9.1 8-Pin SOIC 150-mil (Package Code SN) ............................................................................ 67
9.2 8-Pin VSOP 150-mil (Package Code SV) ........................................................................... 68
9.3 8-Pin SOIC 208-mil (Package Code SS) ............................................................................ 69
9.4 8-Pin VSOP 208-mil (Package Code ST) ........................................................................... 70
9.5 8-Pin PDIP 300-mil (Package Code DA) ............................................................................ 71
9.6 8-Pad WSON 6x5mm (Package Code ZP) ........................................................................ 72
9.7 8-Pad USON 2x3-mm (Package Code UX) ....................................................................... 74
9.8 24-Ball TFBGA 8x6-mm (Package Code TB, 5x5-1 ball array) .......................................... 75
9.9 24-Ball TFBGA 8x6-mm (Package Code TC, 6x4 ball array) ............................................. 76
10. ORDERING INFORMATION .......................................................................................................... 77
10.1 Valid Part Numbers and Top Side Marking ........................................................................ 78
11. REVISION HISTORY ...................................................................................................................... 80
W25Q80BV
Publication Release Date: Augest 01, 2012
- 5 - Revision G
1. GENERAL DESCRIPTION
The W25Q80BV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space,
pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash
devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)
and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current
consumption as low as 4mA active and 1µA for power-down.
The W25Q80BV array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes
can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128
(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80BV
has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater
flexibility in applications that require data and parameter storage. (See figure 2.)
The W25Q80BV supports the standard Serial Peripheral Interface (SPI), and a high performance
Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1
(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing
equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when
using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard
Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient
memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP
(execute in place) operation.
A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array
control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer
and device identification with a 64-bit Unique Serial Number.
2. FEATURES
Family of SpiFlash Memories
– W25Q80BV: 8M-bit/1M-byte (1,048,576)
– 256-byte per programmable page
– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold
– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold
– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3
Highest Performance Serial Flash
– 104MHz Dual/Quad SPI clocks
– 208/416MHz equivalent Dual/Quad SPI
– 50MB/S continuous data transfer rate
– Up to 8X that of ordinary Serial Flash
– More than 100,000 erase/program cycles(1)
– More than 20-year data retention
Efficient “Continuous Read Mode”
– Low Instruction overhead
– Continuous Read with 8/16/32/64-Byte Wrap
– As few as 8 clocks to address memory
– Allows true XIP (execute in place) operation
– Outperforms X16 Parallel Flash
Low Power, Wide Temperature Range
– Single 2.7 to 3.6V supply
– 4mA active current, <1µA Power-down current
– -40°C to +85/105°C operating range
Flexible Architecture with 4KB sectors
– Uniform Sector/Block Erase (4/32/64K-bytes)
– Program one to 256 bytes
– Erase/Program Suspend & Resume
Advanced Security Features
– Software and Hardware Write-Protect
– Top/Bottom, 4KB complement array protection
– Lock-Down and OTP array protection
– 64-Bit Unique Serial Number for each device
– Discoverable Parameters (SFDP) Register
– 3X256-Byte Security Registers with OTP locks
– Volatile & Non-volatile Status Register Bits
Space Efficient Packaging(2)
– 8-pin SOIC/VSOP 150/208-mil
– 8-pad USON 2x3-mm
– 8-pad WSON 6x5-mm
– 8-pin PDIP 300-mil
– 24-ball TFBGA 8x6-mm (6x4/5x5 ball array)
– Contact Winbond for KGD and other options
Note 1. More than 100,000 Block Erase/Program cycles for Industrial and Automotive temperature; more than
10,000 full chip Erase/Program cycles tested in compliance with AEC-Q100.
2. Some package types are special orders, please contact Winbond for ordering information.
W25Q80BV
- 6 -
3. PACKAGE TYPES AND PIN CONFIGURATIONS
W25Q80BV is offered in an 8-pin SOIC 150-mil or 208-mil (package code SN & SS), an 8-pin VSOP 150-
mil or 208-mil (package code SV & ST), an 8-pad WSON 6x5-mm (package code ZP), an 8-pad USON
2x3-mm (package code UX), an 8-pin PDIP 300-mil (package code DA) and a 24-ball 8x6-mm TFBGA
(5x5 ball array - package code TB, 6x4 ball array – package code TC) as shown in Figure 1a-d
respectively. Package diagrams and dimensions are illustrated at the end of this datasheet.
3.1 Pin Configuration SOIC / VSOP 150 / 208-mil
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
DI (IO0)
CLK
Top View
Figure 1a. W25Q80BV Pin Assignments, 8-pin SOIC / VSOP 150 / 208-mil (Package Code SN, SS, SV, ST)
3.2 Pad Configuration WSON 6x5-mm / USON 2x3-mm
1
2
3
4
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
DI (IO0)
CLK
Top View
8
7
6
5
Figure 1b. W25Q80BV Pad Assignments, 8-pad WSON 6x5-mm, USON 2x3-mm (Package Code ZP, UX)
W25Q80BV
Publication Release Date: Augest 01, 2012
- 7 - Revision G
3.3 Pin Configuration PDIP 300-mil
1
2
3
4
8
7
6
5
/CS
DO (IO1)
/WP (IO2)
GND
VCC
/HOLD (IO3)
DI (IO0)
CLK
Top View
Figure 1c. W25Q80BV Pin Assignments, 8-pin PDIP (Package Code DA)
3.4 Pin Description SOIC, VSOP, WSON, USON & PDIP 300-mil
PIN NO.
PIN NAME
I/O
FUNCTION
1
/CS
I
Chip Select Input
2
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
3
/WP (IO2)
I/O
Write Protect Input ( Data Input Output 2)*2
4
GND
Ground
5
DI (IO0)
I/O
Data Input (Data Input Output 0)*1
6
CLK
I
Serial Clock Input
7
/HOLD (IO3)
I/O
Hold Input (Data Input Output 3)*2
8
VCC
Power Supply
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q80BV
- 8 -
3.5 Ball Configuration TFBGA 8x6-mm
Figure 1d. W25Q80BV Ball Assignments, 24-ball TFBGA 8x6-mm (Package Code TB or TC)
3.6 Ball Description TFBGA 8x6-mm
BALL NO.
PIN NAME
I/O
FUNCTION
B2
CLK
I
Serial Clock Input
B3
GND
Ground
B4
VCC
Power Supply
C2
/CS
I
Chip Select Input
C4
/WP (IO2)
I/O
Write Protect Input (Data Input Output 2)*2
D2
DO (IO1)
I/O
Data Output (Data Input Output 1)*1
D3
DI (IO0)
I/O
Data Input (Data Input Output 0)*1
D4
/HOLD (IO3)
I/O
Hold Input (Data Input Output 3)*2
Multiple
NC
No Connect
*1 IO0 and IO1 are used for Standard and Dual SPI instructions
*2 IO0 – IO3 are used for Quad SPI instructions
W25Q80BV
Publication Release Date: Augest 01, 2012
- 9 - Revision G
4. PIN DESCRIPTIONS
4.1 Chip Select (/CS)
The SPI Chip Select (/CS) pin enables and disables device operation. When /CS is high the device is
deselected and the Serial Data Output (DO, or IO0, IO1, IO2, IO3) pins are at high impedance. When
deselected, the devices power consumption will be at standby levels unless an internal erase, program or
write status register cycle is in progress. When /CS is brought low the device will be selected, power
consumption will increase to active levels and instructions can be written to and data read from the device.
After power-up, /CS must transition from high to low before a new instruction will be accepted. The /CS
input must track the VCC supply level at power-up (see “Write Protection” and figure 38). If needed a pull-
up resister on /CS can be used to accomplish this.
4.2 Serial Data Input, Output and IOs (DI, DO and IO0, IO1, IO2, IO3)
The W25Q80BV supports standard SPI, Dual SPI and Quad SPI operation. Standard SPI instructions use
the unidirectional DI (input) pin to serially write instructions, addresses or data to the device on the rising
edge of the Serial Clock (CLK) input pin. Standard SPI also uses the unidirectional DO (output) to read
data or status from the device on the falling edge of CLK.
Dual and Quad SPI instructions use the bidirectional IO pins to serially write instructions, addresses or
data to the device on the rising edge of CLK and read data or status from the device on the falling edge of
CLK. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in Status Register-2 to be set.
When QE=1, the /WP pin becomes IO2 and /HOLD pin becomes IO3.
4.3 Write Protect (/WP)
The Write Protect (/WP) pin can be used to prevent the Status Register from being written. Used in
conjunction with the Status Register’s Block Protect (CMP, SEC, TB, BP2, BP1 and BP0) bits and Status
Register Protect (SRP) bits, a portion as small as a 4KB sector or the entire memory array can be
hardware protected. The /WP pin is active low. When the QE bit of Status Register-2 is set for Quad I/O,
the /WP pin function is not available since this pin is used for IO2. See figure 1a-c for the pin configuration
of Quad I/O operation.
4.4 HOLD (/HOLD)
The /HOLD pin allows the device to be paused while it is actively selected. When /HOLD is brought low,
while /CS is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored
(don’t care). When /HOLD is brought high, device operation can resume. The /HOLD function can be
useful when multiple devices are sharing the same SPI signals. The /HOLD pin is active low. When the
QE bit of Status Register-2 is set for Quad I/O, the /HOLD pin function is not available since this pin is
used for IO3. See figure 1a-c for the pin configuration of Quad I/O operation.
4.5 Serial Clock (CLK)
The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI
Operations")
W25Q80BV
- 10 -
5. BLOCK DIAGRAM
Figure 2. W25Q80BV Serial Flash Memory Block Diagram
003000h 0030FFh
002000h 0020FFh
001000h 0010FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q80BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
DO (IO1)
DI (IO0)
/CS
CLK
/HOLD (IO3)
/WP (IO2)
High Voltage
Generators
xx0F00h xx0FFFh
•Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx1FFFh
•Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx2FFFh
•Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
•Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
•Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
•Sector 15 (4KB) •
xxF000h xxF0FFh
Block Segmentation
Data
Security Register 1 - 3
Write Protect Logic and Row Decode
000000h 0000FFh
SFDP Register
00FF00h 00FFFFh
•Block 0 (64KB) •
000000h 0000FFh
•
•
•
03FF00h 03FFFFh
•Block 3 (64KB) •
030000h 0300FFh
04FF00h 04FFFFh
•Block 4 (64KB) •
040000h 0400FFh
•
•
•
07FF00h 07FFFFh
•Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
•Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
•Block 15 (64KB) •
0F0000h 0F00FFh
003000h 0030FFh
002000h 0020FFh
001000h 0010FFh
Column Decode
And 256-Byte Page Buffer
Beginning
Page Address Ending
Page Address
W25Q80BV
SPI
Command &
Control Logic
Byte Address
Latch / Counter
Status
Register
Write Control
Logic
Page Address
Latch / Counter
DO (IO1)
DI (IO0)
/CS
CLK
/HOLD (IO3)
/WP (IO2)
High Voltage
Generators
xx0F00h xx0FFFh
•Sector 0 (4KB) •
xx0000h xx00FFh
xx1F00h xx1FFFh
•Sector 1 (4KB) •
xx1000h xx10FFh
xx2F00h xx2FFFh
•Sector 2 (4KB) •
xx2000h xx20FFh
•
•
•
xxDF00h xxDFFFh
•Sector 13 (4KB) •
xxD000h xxD0FFh
xxEF00h xxEFFFh
•Sector 14 (4KB) •
xxE000h xxE0FFh
xxFF00h xxFFFFh
•Sector 15 (4KB) •
xxF000h xxF0FFh
Block Segmentation
Data
Security Register 1 - 3
Write Protect Logic and Row Decode
000000h 0000FFh
SFDP Register
00FF00h 00FFFFh
•Block 0 (64KB) •
000000h 0000FFh
•
•
•
03FF00h 03FFFFh
•Block 3 (64KB) •
030000h 0300FFh
04FF00h 04FFFFh
•Block 4 (64KB) •
040000h 0400FFh
•
•
•
07FF00h 07FFFFh
•Block 7 (64KB) •
070000h 0700FFh
08FF00h 08FFFFh
•Block 8 (64KB) •
080000h 0800FFh
•
•
•
0FFF00h 0FFFFFh
•Block 15 (64KB) •
0F0000h 0F00FFh
W25Q80BV
Publication Release Date: Augest 01, 2012
- 11 - Revision G
6. FUNCTIONAL DESCRIPTION
6.1 SPI OPERATIONS
6.1.1 Standard SPI Instructions
The W25Q80BV is accessed through an SPI compatible bus consisting of four signals: Serial Clock (CLK),
Chip Select (/CS), Serial Data Input (DI) and Serial Data Output (DO). Standard SPI instructions use the
DI input pin to serially write instructions, addresses or data to the device on the rising edge of CLK. The
DO output pin is used to read data or status from the device on the falling edge CLK.
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and
Mode 3 concerns the normal state of the CLK signal when the SPI bus master is in standby and data is
not being transferred to the Serial Flash. For Mode 0, the CLK signal is normally low on the falling and
rising edges of /CS. For Mode 3, the CLK signal is normally high on the falling and rising edges of /CS.
6.1.2 Dual SPI Instructions
The W25Q80BV supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast
Read Dual I/O (BBh)” instructions. These instructions allow data to be transferred to or from the device at
two to three times the rate of ordinary Serial Flash devices. The Dual SPI Read instructions are ideal for
quickly downloading code to RAM upon power-up (code-shadowing) or for executing non-speed-critical
code directly from the SPI bus (XIP). When using Dual SPI instructions, the DI and DO pins become
bidirectional I/O pins: IO0 and IO1.
6.1.3 Quad SPI Instructions
The W25Q80BV supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, “Fast
Read Quad I/O (EBh)”, “Word Read Quad I/O (E7h)” and “Octal Word Read Quad I/O (E3h)” instructions.
These instructions allow data to be transferred to or from the device six to eight times the rate of ordinary
Serial Flash. The Quad Read instructions offer a significant improvement in continuous and random
access transfer rates allowing fast code-shadowing to RAM or execution directly from the SPI bus (XIP).
When using Quad SPI instructions the DI and DO pins become bidirectional IO0 and IO1, and the /WP
and /HOLD pins become IO2 and IO3 respectively. Quad SPI instructions require the non-volatile Quad
Enable bit (QE) in Status Register-2 to be set.
6.1.4 Hold Function
For Standard SPI and Dual SPI operations, the /HOLD signal allows the W25Q80BV operation to be
paused while it is actively selected (when /CS is low). The /HOLD function may be useful in cases where
the SPI data and clock signals are shared with other devices. For example, consider if the page buffer
was only partially written when a priority interrupt requires use of the SPI bus. In this case the /HOLD
function can save the state of the instruction and the data in the buffer so programming can resume where
it left off once the bus is available again. The /HOLD function is only available for standard SPI and Dual
SPI operation, not during Quad SPI.
To initiate a /HOLD condition, the device must be selected with /CS low. A /HOLD condition will activate on
the falling edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the
/HOLD condition will activate after the next falling edge of CLK. The /HOLD condition will terminate on the
rising edge of the /HOLD signal if the CLK signal is already low. If the CLK is not already low the /HOLD
W25Q80BV
- 12 -
condition will terminate after the next falling edge of CLK. During a /HOLD condition, the Serial Data
Output (DO) is high impedance, and Serial Data Input (DI) and Serial Clock (CLK) are ignored. The Chip
Select (/CS) signal should be kept active low for the full duration of the /HOLD operation to avoid resetting
the internal logic state of the device.
6.2 WRITE PROTECTION
Applications that use non-volatile memory must take into consideration the possibility of noise and other
adverse system conditions that may compromise data integrity. To address this concern, the W25Q80BV
provides several means to protect the data from inadvertent writes.
6.2.1 Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-up
Write enable/disable instructions and automatic write disable after erase or program
Software and Hardware (/WP pin) write protection using Status Register
Write Protection using Power-down instruction
Lock Down write protection until next power-up
One Time Program (OTP) write protection*
* Note: This feature is available upon special order. Please contact Winbond for details.
Upon power-up or at power-down, the W25Q80BV will maintain a reset condition while VCC is below the
threshold value of VWI, (See Power-up Timing and Voltage Levels and Figure 38). While reset, all
operations are disabled and no instructions are recognized. During power-up and after the VCC voltage
exceeds VWI, all program and erase related instructions are further disabled for a time delay of tPUW. This
includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Register instructions. Note that the chip select pin (/CS) must track the VCC supply level at power-up until
the VCC-min level and tVSL time delay is reached. If needed a pull-up resister on /CS can be used to
accomplish this.
After power-up the device is automatically placed in a write-disabled state with the Status Register Write
Enable Latch (WEL) set to a 0. A Write Enable instruction must be issued before a Page Program, Sector
Erase, Block Erase, Chip Erase or Write Status Register instruction will be accepted. After completing a
program, erase or write instruction the Write Enable Latch (WEL) is automatically cleared to a write-
disabled state of 0.
Software controlled write protection is facilitated using the Write Status Register instruction and setting the
Status Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC,TB, BP2, BP1 and BP0) bits. These
settings allow a portion as small as 4KB sector or the entire memory array to be configured as read only.
Used in conjunction with the Write Protect (/WP) pin, changes to the Status Register can be enabled or
disabled under hardware control. See Status Register section for further information. Additionally, the
Power-down instruction offers an extra level of write protection as all instructions are ignored except for
the Release Power-down instruction.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 13 - Revision G
7. CONTROL AND STATUS REGISTERS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, Quad SPI setting, Security Register lock status and Erase/Program Suspend status. The Write
Status Register instruction can be used to configure the device write protection features, Quad SPI setting
and Security Register OTP lock. Write access to the Status Register is controlled by the state of the non-
volatile Status Register Protect bits (SRP0, SRP1), the Write Enable instruction, and during Standard/Dual
SPI operations, the /WP pin.
7.1 STATUS REGISTER
7.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register or
Erase/Program Security Register instruction. During this time the device will ignore further instructions
except for the Read Status Register and Erase/Program Suspend instruction (see tW, tPP, tSE, tBE, and
tCE in AC Characteristics). When the program, erase or write status/security register instruction has
completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further instructions.
7.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page Program,
Quad Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Erase Security
Register and Program Security Register.
7.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see tW in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
7.1.4 Top/Bottom Block Protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP0, SRP1 and WEL bits.
7.1.5 Sector/Block Protect (SEC)
The non-volatile Sector/Block Protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect
either 4KB Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array
as shown in the Status Register Memory Protection table. The default setting is SEC=0.
W25Q80BV
- 14 -
7.1.6 Complement Protect (CMP)
The Complement Protect bit (CMP) is a non-volatile read/write bit in the status register (S14). It is used in
conjunction with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once
CMP is set to 1, previous array protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For
instance, when CMP=0, a top 4KB sector can be protected while the rest of the array is not; when CMP=1,
the top 4KB sector will become unprotected while the rest of the array become read-only. Please refer to
the Status Register Memory Protection table for details. The default setting is CMP=0.
7.1.7 Status Register Protect (SRP1, SRP0)
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read/write bits in the status register
(S8 and S7). The SRP bits control the method of write protection: software protection, hardware protection,
power supply lock-down or one time programmable (OTP) protection.
SRP1
SRP0
/WP
Status
Register
Description
0
0
X
Software
Protection
/WP pin has no control. The Status register can be written to
after a Write Enable instruction, WEL=1. [Factory Default]
0
1
0
Hardware
Protected
When /WP pin is low the Status Register locked and can not
be written to.
0
1
1
Hardware
Unprotected
When /WP pin is high the Status register is unlocked and can
be written to after a Write Enable instruction, WEL=1.
1
0
X
Power Supply
Lock-Down
Status Register is protected and can not be written to again
until the next power-down, power-up cycle.(1)
1
1
X
One Time
Program(2)
Status Register is permanently protected and can not be
written to.
Notes:
1. When SRP1, SRP0 = (1, 0), a power-down, power-up cycle will change SRP1, SRP0 to (0, 0) state. 2.
This feature is available upon special order. Please contact Winbond for details.
7.1.8 Erase/Program Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (S15) that is set to 1 after executing a
Erase/Program Suspend (75h) instruction. The SUS status bit is cleared to 0 by Erase/Program Resume
(7Ah) instruction as well as a power-down, power-up cycle.
7.1.9 Security Register Lock Bits (LB3, LB2, LB1)
The Security Register Lock Bits (LB3, LB2, LB1) are non-volatile One Time Program (OTP) bits in Status
Register (S13, S12, S11) that provide the write protect control and status to the Security Registers. The
default state of LB[3:1] is 0, Security Registers are unlocked. LB[3:1] can be set to 1 individually using the
Write Status Register instruction. LB[3:1] are One Time Programmable (OTP), once it’s set to 1, the
corresponding 256-Byte Security Register will become read-only permanently.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 15 - Revision G
7.1.10 Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read/write bit in the status register (S9) that allows Quad SPI
operation. When the QE bit is set to a 0 state (factory default), the /WP pin and /HOLD are enabled. When
the QE bit is set to a 1, the Quad IO2 and IO3 pins are enabled, and /WP and /HOLD functions are
disabled.
WARNING: If the /WP or /HOLD pins are tied directly to the power supply or ground during
standard SPI or Dual SPI operation, the QE bit should never be set to a 1.
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
STATUS REGISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
S7 S6 S5 S4 S3 S2 S1 S0
SRP0 SEC TB BP2 BP1 BP0 WEL BUSY
STATUS REGISTER PROTECT 0
(non-volatile)
SECTOR PROTECT
(non-volatile)
TOP/BOTTOM PROTECT
(non-volatile)
BLOCK PROTECT BITS
(non-volatile)
WRITE ENABLE LATCH
ERASE/WRITE IN PROGRESS
Figure 3a. Status Register-1
S15 S14 S13 S12 S11 S10 S9 S8
SUS CMP LB3 LB2 LB1 (R) QE SRP1
SUSPEND STATUS
COMPLEMENT PROTECT
(non-volatile)
SECURITY REGISTER LOCK BITS
(non-volatile OTP)
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(non-volatile)
RESERVED
S15 S14 S13 S12 S11 S10 S9 S8
SUS CMP LB3 LB2 LB1 (R) QE SRP1
SUSPEND STATUS
COMPLEMENT PROTECT
(non-volatile)
SECURITY REGISTER LOCK BITS
(non-volatile OTP)
QUAD ENABLE
(non-volatile)
STATUS REGISTER PROTECT 1
(non-volatile)
RESERVED
Figure 3b. Status Register-2
W25Q80BV
- 16 -
7.1.11 Status Register Memory Protection (CMP = 0)
STATUS REGISTER(1)
W25Q80BV (8M-BIT) MEMORY PROTECTION(2)
SEC
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PORTION
X
X
0
0
0
NONE
NONE
NONE
NONE
0
0
0
0
1
15
0F0000h – 0FFFFFh
64KB
Upper 1/16
0
0
0
1
0
14 and 15
0E0000h – 0FFFFFh
128KB
Upper 1/8
0
0
0
1
1
12 thru 15
0C0000h – 0FFFFFh
256KB
Upper 1/4
0
0
1
0
0
8 thru 15
080000h – 0FFFFFh
512KB
Upper 1/2
0
1
0
0
1
0
000000h – 00FFFFh
64KB
Lower 1/16
0
1
0
1
0
0 and 1
000000h – 01FFFFh
128KB
Lower 1/8
0
1
0
1
1
0 thru 3
000000h – 03FFFFh
256KB
Lower 1/4
0
1
1
0
0
0 thru 7
000000h – 07FFFFh
512KB
Lower 1/2
0
X
1
0
1
0 thru 15
000000h – 0FFFFFh
1MB
ALL
X
X
1
1
1
0 thru 15
000000h – 0FFFFFh
1MB
ALL
1
0
0
0
1
15
0FF000h – 0FFFFFh
4KB
Upper 1/256
1
0
0
1
0
15
0FE000h – 0FFFFFh
8KB
Upper 1/128
1
0
0
1
1
15
0FC000h – 0FFFFFh
16KB
Upper 1/64
1
0
1
0
1
15
0F8000h – 0FFFFFh
32KB
Upper 1/32
1
0
1
X
0
15
0F8000h – 0FFFFFh
32KB
Upper 1/32
1
1
0
0
1
0
000000h – 000FFFh
4KB
Lower 1/256
1
1
0
1
0
0
000000h – 001FFFh
8KB
Lower 1/128
1
1
0
1
1
0
000000h – 003FFFh
16KB
Lower 1/64
1
1
1
0
X
0
000000h – 007FFFh
32KB
Lower 1/32
1
1
1
X
0
0
000000h – 007FFFh
32KB
Lower 1/32
Notes:
1. X = don’t care
2. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 17 - Revision G
7.1.12 Status Register Memory Protection (CMP = 1)
STATUS REGISTER(1)
W25Q80BV (8M-BIT) MEMORY PROTECTION(2)
SEC
TB
BP2
BP1
BP0
BLOCK(S)
ADDRESSES
DENSITY
PORTION
X
X
0
0
0
0 thru 15
000000h – 0FFFFFh
1MB
ALL
0
0
0
0
1
0 thru 14
000000h – 0EFFFFh
960KB
Lower 15/16
0
0
0
1
0
0 thru 13
000000h – 0DFFFFh
896KB
Lower 7/8
0
0
0
1
1
0 thru 11
000000h – 0BFFFFh
768KB
Lower 3/4
0
0
1
0
0
0 thru 7
000000h – 07FFFFh
512KB
Lower 1/2
0
1
0
0
1
1 thru 15
010000h – 0FFFFFh
960KB
Upper 15/16
0
1
0
1
0
2 thru 15
020000h – 0FFFFFh
896KB
Upper 7/8
0
1
0
1
1
4 thru 15
040000h – 0FFFFFh
768KB
Upper 3/4
0
1
1
0
0
8 thru 15
080000h – 0FFFFFh
512KB
Upper 1/2
X
X
1
1
1
NONE
NONE
NONE
NONE
1
0
0
0
1
0 thru 15
000000h – 0FEFFFh
1,020KB
Lower 255/256
1
0
0
1
0
0 thru 15
000000h – 0FDFFFh
1,016KB
Lower 127/128
1
0
0
1
1
0 thru 15
000000h – 0FBFFFh
1,008KB
Lower 63/64
1
0
1
0
X
0 thru 15
000000h – 0F7FFFh
992KB
Lower 31/32
1
0
1
1
0
0 thru 15
000000h – 0F7FFFh
992KB
Lower 31/32
1
1
0
0
1
0 thru 15
001000h – 0FFFFFh
1,020KB
Upper 255/256
1
1
0
1
0
0 thru 15
002000h – 0FFFFFh
1,016KB
Upper 127/128
1
1
0
1
1
0 thru 15
004000h – 0FFFFFh
1,008KB
Upper 63/64
1
1
1
0
X
0 thru 15
008000h – 0FFFFFh
992KB
Upper 31/32
1
1
1
1
0
0 thru 15
008000h – 0FFFFFh
992KB
Upper 31/32
Notes:
1. X = don’t care
2. If any Erase or Program command specifies a memory region that contains protected data portion, this
command will be ignored.
W25Q80BV
- 18 -
7.2 INSTRUCTIONS
The instruction set of the W25Q80BV consists of thirty five basic instructions that are fully controlled
through the SPI bus (see Instruction Set table1-3). Instructions are initiated with the falling edge of Chip
Select (/CS). The first byte of data clocked into the DI input provides the instruction code. Data on the DI
input is sampled on the rising edge of clock with most significant bit (MSB) first.
Instructions vary in length from a single byte to several bytes and may be followed by address bytes, data
bytes, dummy bytes (don’t care), and in some cases, a combination. Instructions are completed with the
rising edge of edge /CS. Clock relative timing diagrams for each instruction are included in figures 4
through 37. All read instructions can be completed after any clocked bit. However, all instructions that
Write, Program or Erase must complete on a byte boundary (/CS driven high after a full 8-bits have been
clocked) otherwise the instruction will be ignored. This feature further protects the device from inadvertent
writes. Additionally, while the memory is being programmed or erased, or when the Status Register is
being written, all instructions except for Read Status Register will be ignored until the program or erase
cycle has completed.
7.2.1 Manufacturer and Device Identification
MANUFACTURER ID
(MF7-MF0)
Winbond Serial Flash
EFh
Device ID
(ID7-ID0)
(ID15-ID0)
Instruction
ABh, 90h, 92h, 94h
9Fh
W25Q80BV
13h
4014h
W25Q80BV
Publication Release Date: Augest 01, 2012
- 19 - Revision G
7.2.2 Instruction Set Table 1 (Erase, Program Instructions)(1)
INSTRUCTION NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Write Enable
06h
Write Enable for
Volatile Status Register
50h
Write Disable
04h
Read Status Register-1
05h
(S7–S0) (2)
Read Status Register-2
35h
(S15–S8) (2)
Write Status Register
01h
S7–S0
S15-S8
Page Program
02h
A23–A16
A15–A8
A7–A0
D7–D0
Quad Page Program
32h
A23–A16
A15–A8
A7–A0
D7–D0, …(3)
Sector Erase (4KB)
20h
A23–A16
A15–A8
A7–A0
Block Erase (32KB)
52h
A23–A16
A15–A8
A7–A0
Block Erase (64KB)
D8h
A23–A16
A15–A8
A7–A0
Chip Erase
C7h/60h
Erase / Program Suspend
75h
Erase / Program Resume
7Ah
Power-down
B9h
Continuous Read Mode
Reset (4)
FFh
FFh
Notes:
1. Data bytes are shifted with Most Significant Bit first. Byte fields with data in parenthesis “()” indicate data being
read from the device on the DO pin.
2. The Status Register contents will repeat continuously until /CS terminates the instruction.
3. Quad Page Program Input Data:
IO0 = D4, D0, ……
IO1 = D5, D1, ……
IO2 = D6, D2, ……
IO3 = D7, D3, ……
4. This instruction is recommended when using the Dual or Quad “Continuous Read Mode” feature. See section
7.2.19 & 7.2.20 for more information.
W25Q80BV
- 20 -
7.2.3 Instruction Set Table 2 (Read Instructions)
INSTRUCTION NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Read Data
03h
A23-A16
A15-A8
A7-A0
(D7-D0)
Fast Read
0Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0)
Fast Read Dual Output
3Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …)(1)
Fast Read Quad Output
6Bh
A23-A16
A15-A8
A7-A0
dummy
(D7-D0, …)(3)
Fast Read Dual I/O
BBh
A23-A8(2)
A7-A0, M7-M0(2)
(D7-D0, …)(1)
Fast Read Quad I/O
EBh
A23-A0, M7-M0(4)
(x,x,x,x, D7-D0,
…)(5)
(D7-D0, …)(3)
Word Read Quad I/O(7)
E7h
A23-A0, M7-M0(4)
(x,x, D7-D0, …)(6)
(D7-D0, …)(3)
Octal Word Read Quad I/O(8)
E3h
A23-A0, M7-M0(4)
(D7-D0, …)(3)
Set Burst with Wrap
77h
xxxxxx, W 6-W4(4)
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
4. Quad Input Address Set Burst with Wrap Input
IO0 = A20, A16, A12, A8, A4, A0, M4, M0 IO0 = x, x, x, x, x, x, W4, x
IO1 = A21, A17, A13, A9, A5, A1, M5, M1 IO1 = x, x, x, x, x, x, W5, x
IO2 = A22, A18, A14, A10, A6, A2, M6, M2 IO2 = x, x, x, x, x, x, W6, x
IO3 = A23, A19, A15, A11, A7, A3, M7, M3 IO3 = x, x, x, x, x, x, x, x
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
6. Word Read Quad I/O Data
IO0 = (x, x, D4, D0, …..)
IO1 = (x, x, D5, D1, …..)
IO2 = (x, x, D6, D2, …..)
IO3 = (x, x, D7, D3, …..)
7. The lowest address bit must be 0. ( A0 = 0 )
8. The lowest 4 address bits must be 0. ( A0, A1, A2, A3 = 0 )
W25Q80BV
Publication Release Date: Augest 01, 2012
- 21 - Revision G
7.2.4 Instruction Set Table 3 (ID, Security Instructions)
INSTRUCTION
NAME
BYTE 1
(CODE)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
Release Power down/
Device ID
ABh
dummy
dummy
dummy
(ID7-ID0)(1)
Manufacturer/
Device ID(2)
90h
dummy
dummy
00h
(MF7-MF0)
(ID7-ID0)
Manufacturer/Device ID
by Dual I/O
92h
A23-A8
A7-A0, M[7:0]
(MF[7:0], ID[7:0])
Manufacture/Device ID
by Quad I/O
94h
A23-A0, M[7:0]
xxxx, (MF[7:0], ID[7:0])
(MF[7:0], ID[7:0], …)
JEDEC ID
9Fh
(MF7-MF0)
Manufacturer
(ID15-ID8)
Memory Type
(ID7-ID0)
Capacity
Read Unique ID
4Bh
dummy
dummy
dummy
dummy
(ID63-ID0)
Read SFDP Register
5Ah
00h
00h
A7–A0
dummy
(D7-0)
Erase
Security Registers(3)
44h
A23–A16
A15–A8
A7–A0
Program
Security Registers(3)
42h
A23–A16
A15–A8
A7–A0
D7-D0
D7-D0
Read
Security Registers(3)
48h
A23–A16
A15–A8
A7–A0
dummy
(D7-0)
Notes:
1. The Device ID will repeat continuously until /CS terminates the instruction.
2. See Manufacturer and Device Identification table for Device ID information.
3. Security Register Address:
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
W25Q80BV
- 22 -
7.2.5 Write Enable (06h)
The Write Enable instruction (Figure 4) sets the Write Enable Latch (WEL) bit in the Status Register to a 1.
The WEL bit must be set prior to every Page Program, Quad Page Program, Sector Erase, Block Erase,
Chip Erase, Write Status Register and Erase/Program Security Registers instruction. The Write Enable
instruction is entered by driving /CS low, shifting the instruction code “06h” into the Data Input (DI) pin on
the rising edge of CLK, and then driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (06h)
High Impedance
Figure 4. Write Enable Instruction Sequence Diagram
7.2.6 Write Enable for Volatile Status Register (50h)
The non-volatile Status Register bits described in section 7.1 can also be written to as volatile bits. This
gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-
volatile bits. To write the volatile values into the Status Register bits, the Write Enable for Volatile Status
Register (50h) instruction must be issued prior to a Write Status Register (01h) instruction. Write Enable
for Volatile Status Register instruction (Figure 5) will not set the Write Enable Latch (WEL) bit, it is only
valid for the Write Status Register instruction to change the volatile Status Register bit values.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (50h)
High Impedance
Figure 5. Write Enable for Volatile Status Register Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 23 - Revision G
7.2.7 Write Disable (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register to
a 0. The Write Disable instruction is entered by driving /CS low, shifting the instruction code “04h” into the
DI pin and then driving /CS high. Note that the WEL bit is automatically reset after Power-up and upon
completion of the Write Status Register, Erase/Program Security Registers, Page Program, Quad Page
Program, Sector Erase, Block Erase and Chip Erase instructions.
Write Disable instruction can also be used to invalidate the Write Enable for Volatile Status Register
instruction.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Mode 0
Mode 3
Instruction (04h)
High Impedance
Figure 6. Write Disable Instruction Sequence Diagram
W25Q80BV
- 24 -
7.2.8 Read Status Register-1 (05h) and Read Status Register-2 (35h)
The Read Status Register instructions allow the 8-bit Status Registers to be read. The instruction is
entered by driving /CS low and shifting the instruction code “05h” for Status Register-1 or “35h” for Status
Register-2 into the DI pin on the rising edge of CLK. The status register bits are then shifted out on the DO
pin at the falling edge of CLK with most significant bit (MSB) first as shown in figure 7. The Status Register
bits are shown in figure 3a and 3b and include the BUSY, WEL, BP2-BP0, TB, SEC, SRP0, SRP1, QE,
LB[3:1], CMP and SUS bits (see Status Register section earlier in this datasheet).
The Read Status Register instruction may be used at any time, even while a Program, Erase or Write
Status Register cycle is in progress. This allows the BUSY status bit to be checked to determine when the
cycle is complete and if the device can accept another instruction. The Status Register can be read
continuously, as shown in Figure 7. The instruction is completed by driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (05h or 35h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
76543210765432107
Status Register 1 or 2 out Status Register 1 or 2 out
* *
= MSB
*
Figure 7. Read Status Register Instruction Sequence Diagram
7.2.9 Write Status Register (01h)
The Write Status Register instruction allows the Status Register to be written. Only non-volatile Status
Register bits SRP0, SEC, TB, BP2, BP1, BP0 (bits 7 thru 2 of Status Register-1) and CMP, LB3, LB2, LB1,
QE, SRP1 (bits 14 thru 8 of Status Register-2) can be written to. All other Status Register bit locations are
read-only and will not be affected by the Write Status Register instruction. LB[3:1] are non-volatile OTP
bits, once it is set to 1, it can not be cleared to 0. The Status Register bits are shown in figure 3a and 3b
and described in 7.1.
To write non-volatile Status Register bits, a standard Write Enable (06h) instruction must previously have
been executed for the device to accept the Write Status Register Instruction (Status Register bit WEL
must equal 1). Once write enabled, the instruction is entered by driving /CS low, sending the instruction
code “01h”, and then writing the status register data byte as illustrated in figure 8.
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) instruction must
have been executed prior to the Write Status Register instruction (Status Register bit WEL remains 0).
However, SRP1 and LB3, LB2, LB1 can not be changed from “1” to “0” because of the OTP protection for
these bits. Upon power off, the volatile Status Register bit values will be lost, and the non-volatile Status
Register bit values will be restored when power on again.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 25 - Revision G
To complete the Write Status Register instruction, the /CS pin must be driven high after the eighth or
sixteenth bit of data that is clocked in. If this is not done the Write Status Register instruction will not be
executed. If /CS is driven high after the eighth clock (compatible with the 25X series) the CMP and QE bits
will be cleared to 0.
During non-volatile Status Register write operation (06h combined with 01h), after /CS is driven high, the
self-timed Write Status Register cycle will commence for a time duration of tW (See AC Characteristics).
While the Write Status Register cycle is in progress, the Read Status Register instruction may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Register cycle
and a 0 when the cycle is finished and ready to accept other instructions again. After the Write Status
Register cycle has finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after /CS is driven high, the
Status Register bits will be refreshed to the new values within the time period of tSHSL2 (See AC
Characteristics). BUSY bit will remain 0 during the Status Register bit refresh period.
Please refer to 7.1 for detailed Status Register Bit descriptions. Factory default for all status Register bits
are 0.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (01h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
7654321015 14 13 12 11 10 9 8
Status Register 1 in Status Register 2 in
Mode 0
Mode 3
* *
= MSB
*
Figure 8. Write Status Register Instruction Sequence Diagram
W25Q80BV
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7.2.10 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a
24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (03h)
High Impedance
8 9 10 28 29 30 31 32 33 34 35 36 37 38 39
765432107
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
*
= MSB
*
Figure 9. Read Data Instruction Sequence Diagram
W25Q80BV
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7.2.11 Fast Read (0Bh)
The Fast Read instruction is similar to the Read Data instruction except that it can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 10. The dummy clocks allow the devices
internal circuits additional time for setting up the initial address. During the dummy clocks the data value
on the DO pin is a “don’t care”.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (0Bh)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Clocks
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
4331
0
= MSB
*
Figure 10. Fast Read Instruction Sequence Diagram
W25Q80BV
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7.2.12 Fast Read Dual Output (3Bh)
The Fast Read Dual Output (3Bh) instruction is similar to the standard Fast Read (0Bh) instruction except
that data is output on two pins; IO0 and IO1. This allows data to be transferred from the W25Q80BV at
twice the rate of standard SPI devices. The Fast Read Dual Output instruction is ideal for quickly
downloading code from Flash to RAM upon power-up or for applications that cache code-segments to
RAM for execution.
Similar to the Fast Read instruction, the Fast Read Dual Output instruction can operate at the highest
possible frequency of FR (see AC Electrical Characteristics). This is accomplished by adding eight
“dummy” clocks after the 24-bit address as shown in figure 11. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care”. However, the IO0 pin should be high-impedance prior to the falling edge of the first data out
clock.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (3Bh)
High Impedance
8 9 10 28 29 30
32 33 34 35 36 37 38 39
6420
24-Bit Address
23 22 21 3 2 1 0
*
*
31
31
/CS
CLK
DI
(IO0)
DO
(IO1)
Dummy Clocks
0
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
7531
High Impedance
6 4 2 0
7 5 3 1
6420
7531
6420
7531
IO0 switches from
Input to Output
6
7
Data Out 1 *Data Out 2 *Data Out 3 *Data Out 4
= MSB
*
Figure 11. Fast Read Dual Output Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 29 - Revision G
7.2.13 Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) instruction is similar to the Fast Read Dual Output (3Bh) instruction
except that data is output on four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be
executed before the device will accept the Fast Read Quad Output Instruction (Status Register bit QE
must equal 1). The Fast Read Quad Output Instruction allows data to be transferred from the W25Q80BV
at four times the rate of standard SPI devices.
The Fast Read Quad Output instruction can operate at the highest possible frequency of FR (see AC
Electrical Characteristics). This is accomplished by adding eight “dummy” clocks after the 24-bit address
as shown in figure 12. The dummy clocks allow the device's internal circuits additional time for setting up
the initial address. The input data during the dummy clocks is “don’t care”. However, the IO pins should be
high-impedance prior to the falling edge of the first data out clock.
/CS
CLK Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (6Bh)
High Impedance
8 9 10 28 29 30
32 33 34 35 36 37 38 39
4 0
24-Bit Address
23 22 21 3 2 1 0
*
31
31
/CS
CLK
Dummy Clocks
0
40 41 42 43 44 45 46 47
5 1
High Impedance
4
5
Byte 1
High Impedance
High Impedance
6 2
7 3
High Impedance
6
7
High Impedance
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte 2 Byte 3 Byte 4
IO0 switches from
Input to Output
IO0
IO1
IO2
IO3
IO0
IO1
IO2
IO3
= MSB
*
Figure 12. Fast Read Quad Output Instruction Sequence Diagram
W25Q80BV
- 30 -
7.2.14 Fast Read Dual I/O (BBh)
The Fast Read Dual I/O (BBh) instruction allows for improved random access while maintaining two IO
pins, IO0 and IO1. It is similar to the Fast Read Dual Output (3Bh) instruction but with the capability to input
the Address bits (A23-0) two bits per clock. This reduced instruction overhead may allow for code
execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
The Fast Read Dual I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 13a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Dual I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O instruction (after /CS is
raised and then lowered) does not require the BBh instruction code, as shown in figure 13b. This reduces
the instruction sequence by eight clocks and allows the Read address to be immediately entered after /CS
is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next instruction (after
/CS is raised and then lowered) requires the first byte instruction code, thus returning to normal operation.
A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before issuing normal
instructions (See 7.2.20 for detail descriptions).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (BBh)
8 9 10 12 13 14
24 25 26 27 28 29 30 31
6 4 2 0
*
*
23
/CS
CLK
DI
(IO0)
DO
(IO1)
0
32 33 34 35 36 37 38 39
7 5 3 1 *
6420
7531
6420
7531
6 4 2 0
7 5 3 1
* *
IOs switch from
Input to Output
6
7
22 20 18 16
23 21 19 17
14 12 10 8
15 13 11 9
6420
7531
6 4 2 0
7 5 3 1
11 15 16 17 18 20 21 2219 23
1
A23-16 A15-8 A7-0 M7-0
Byte 1 Byte 2 Byte 3 Byte 4
= MSB
**
Figure 13a. Fast Read Dual I/O Instruction Sequence (Initial instruction or previous M5-4 10)
W25Q80BV
Publication Release Date: Augest 01, 2012
- 31 - Revision G
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 8 9 10 12 13 14
24 25 26 27 28 29 30 31
6 4 2 0
*
*
15
/CS
CLK
DI
(IO0)
DO
(IO1)
0
7 5 3 1 *
6 4 2 0
7 5 3 1
6420
7531
6 4 2 0
7 5 3 1
* *
IOs switch from
Input to Output
6
7
22 20 18 16
23 21 19 17
14 12 10 8
15 13 11 9
6 4 2 0
7 5 3 1
6 4 2 0
7 5 3 1
11 15
1
A23-16 A15-8 A7-0 M7-0
Byte 1 Byte 2 Byte 3 Byte 4
01234567
16 17 18 20 21 2219 23
*
= MSB
*
Figure 13b. Fast Read Dual I/O Instruction Sequence (Previous instruction set M5-4 = 10)
W25Q80BV
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7.2.15 Fast Read Quad I/O (EBh)
The Fast Read Quad I/O (EBh) instruction is similar to the Fast Read Dual I/O (BBh) instruction except
that address and data bits are input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy
clock are required prior to the data output. The Quad I/O dramatically reduces instruction overhead
allowing faster random access for code execution (XIP) directly from the Quad SPI. The Quad Enable bit
(QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Instruction.
Fast Read Quad I/O with “Continuous Read Mode”
The Fast Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 14a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the EBh instruction code, as shown in figure 14b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
Figure 14a. Fast Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
Byte 3
15 16 17 18 19 20 21 22 23
Dummy Dummy
Instruction (EBh)
W25Q80BV
Publication Release Date: Augest 01, 2012
- 33 - Revision G
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
Byte 3
15
Dummy Dummy
Figure 14b. Fast Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Fast Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Fast Read Quad I/O instruction can also be used to access a specific portion within a page by issuing
a “Set Burst with Wrap” command prior to EBh. The “Set Burst with Wrap” command can either enable or
disable the “Wrap Around” feature for the following EBh commands. When “Wrap Around” is enabled, the
data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte page. The output
data starts at the initial address specified in the instruction, once it reaches the ending boundary of the
8/16/32/64-byte section, the output will wrap around to the beginning boundary automatically until /CS is
pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 7.2.18 for detail descriptions.
W25Q80BV
- 34 -
7.2.16 Word Read Quad I/O (E7h)
The Word Read Quad I/O (E7h) instruction is similar to the Fast Read Quad I/O (EBh) instruction except
that the lowest Address bit (A0) must equal 0 and only two Dummy clock are required prior to the data
output. The Quad I/O dramatically reduces instruction overhead allowing faster random access for code
execution (XIP) directly from the Quad SPI. The Quad Enable bit (QE) of Status Register-2 must be set to
enable the Word Read Quad I/O Instruction.
Word Read Quad I/O with “Continuous Read Mode”
The Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 15a. The
upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O instruction through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care
(“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the E7h instruction code, as shown in figure 15b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
Figure 15a. Word Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
Byte 3
15 16 17 18 19 20 21
Dummy
Instruction (E7h)
W25Q80BV
Publication Release Date: Augest 01, 2012
- 35 - Revision G
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7
4 0
5 1
6 2
7 3
A15-8 A7-0
4 0
5 1
6 2
7 3
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4
5
6
7
IOs switch from
Input to Output
Byte 3
8 9 10 11 12 13
Dummy
Figure 15b. Word Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
Word Read Quad I/O with “8/16/32/64-Byte Wrap Around”
The Word Read Quad I/O instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” command prior to E7h. The “Set Burst with Wrap” command can either
enable or disable the “Wrap Around” feature for the following E7h commands. When “Wrap Around” is
enabled, the data being accessed can be limited to either a 8, 16, 32 or 64-byte section of a 256-byte
page. The output data starts at the initial address specified in the instruction, once it reaches the ending
boundary of the 8/16/32/64-byte section, the output will wrap around to the beginning boundary
automatically until /CS is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then
fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read
commands.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to
enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the wrap
around section within a page. See 7.2.18 for detail descriptions.
W25Q80BV
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7.2.17 Octal Word Read Quad I/O (E3h)
The Octal Word Read Quad I/O (E3h) instruction is similar to the Fast Read Quad I/O (EBh) instruction
except that the lower four Address bits (A0, A1, A2, A3) must equal 0. As a result, the dummy clocks are
not required, which further reduces the instruction overhead allowing even faster random access for code
execution (XIP). The Quad Enable bit (QE) of Status Register-2 must be set to enable the Octal Word
Read Quad I/O Instruction.
Octal Word Read Quad I/O with “Continuous Read Mode”
The Octal Word Read Quad I/O instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in figure 16a. The
upper nibble of the (M7-4) controls the length of the next Octal Word Read Quad I/O instruction through
the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out
clock.
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O instruction (after /CS
is raised and then lowered) does not require the E3h instruction code, as shown in figure 16b. This
reduces the instruction sequence by eight clocks and allows the Read address to be immediately entered
after /CS is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next
instruction (after /CS is raised and then lowered) requires the first byte instruction code, thus returning to
normal operation. A “Continuous Read Mode” Reset instruction can also be used to reset (M7-0) before
issuing normal instructions (See 7.2.20 for detail descriptions).
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7 8 9
4 0
5 1
6 2
7 3
A15-8 A7-0
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
10 11 12 13 14
4
5
6
7
IOs switch from
Input to Output
Byte 3
15 16 17 18 19 20 21
Instruction (E3h)
4 0
5 1
6 2
7 3
Byte 4
Figure 16a. Octal Word Read Quad I/O Instruction Sequence (Initial instruction or previous M5-4 10)
W25Q80BV
Publication Release Date: Augest 01, 2012
- 37 - Revision G
M7-0
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
20 16 12 8
21 17
22 18
23 19
13 9
14 10
15 11
A23-16
6 7
4 0
5 1
6 2
7 3
A15-8 A7-0
4 0
5 1
6 2
7 3
Byte 1 Byte 2
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4
5
6
7
IOs switch from
Input to Output
Byte 3
8 9 10 11 12 13
4 0
5 1
6 2
7 3
Byte 4
Figure 16b. Octal Word Read Quad I/O Instruction Sequence (Previous instruction set M5-4 = 10)
W25Q80BV
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7.2.18 Set Burst with Wrap (77h)
The Set Burst with Wrap (77h) instruction is used in conjunction with “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions to access a fixed length of 8/16/32/64-byte section within a 256-byte page.
Certain applications can benefit from this feature and improve the overall system code execution
performance.
Similar to a Quad I/O instruction, the Set Burst with Wrap instruction is initiated by driving the /CS pin low
and then shifting the instruction code “77h” followed by 24 dummy bits and 8 “Wrap Bits”, W7-0. The
instruction sequence is shown in figure 17. Wrap bit W7 and the lower nibble W3-0 are not used.
W6, W5
W4 = 0
W4 =1 (DEFAULT)
Wrap Around
Wrap Length
Wrap Around
Wrap Length
0 0
Yes
8-byte
No
N/A
0 1
Yes
16-byte
No
N/A
1 0
Yes
32-byte
No
N/A
1 1
Yes
64-byte
No
N/A
Once W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within any
page. To exit the “Wrap Around” function and return to normal read operation, another Set Burst with
Wrap instruction should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case
of a system Reset while W4 = 0, it is recommended that the controller issues a Set Burst with Wrap
instruction to reset W4 = 1 prior to any normal Read instructions since W25Q80BV does not have a
hardware Reset Pin.
Wrap Bit
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
X X
X X
X X
X X
don't
care
6 7 8 9
don't
care don't
care
10 11 12 13 14 15
Instruction (77h)
Mode 0
Mode 3
X X
X X
X X
X X
X X
X X
X X
X X
w4 X
w5 X
w6 X
X X
Figure 17. Set Burst with Wrap Instruction Sequence
W25Q80BV
Publication Release Date: Augest 01, 2012
- 39 - Revision G
7.2.19 Continuous Read Mode Bits (M7-0)
The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O”, “Fast Read Quad
I/O”, “Word Read Quad I/O” and “Octal Word Read Quad I/O” instructions to provide the highest random
Flash memory access rate with minimum SPI instruction overhead, thus allow true XIP (execute in place)
to be performed on serial flash devices.
M7-0 need to be set by the Dual/Quad I/O Read instructions. M5-4 are used to control whether the 8-bit
SPI instruction code (BBh, EBh, E7h or E3h) is needed or not for the next command. When M5-4 = (1,0),
the next command will be treated same as the current Dual/Quad I/O Read command without needing the
8-bit instruction code; when M5-4 do not equal to (1,0), the device returns to normal SPI mode, all
commands can be accepted. M7-6 and M3-0 are reserved bits for future use, either 0 or 1 values can be
used.
7.2.20 Continuous Read Mode Reset (FFh or FFFFh)
Continuous Read Mode Reset instruction can be used to set M4 = 1, thus the device will release the
Continuous Read Mode and return to normal SPI operation, as shown in figure 18.
/CS
CLK Mode 0
Mode 3 0 1
IO0
IO1
IO2
IO3
2 3 4 5
Don't Care
6 7 8 9 10 11 12 13 14 15
Mode Bit Reset
for Quad I/O (FFh)
Mode 0
Mode 3
Mode Bit Reset
for Dual I/O (FFFFh)
Don't Care
Don't Care
Figure 18. Continuous Read Mode Reset for Fast Read Dual/Quad I/O
Since W25Q80BV does not have a hardware Reset pin, so if the controller resets while W25Q80BV is set
to Continuous Mode Read, the W25Q80BV will not recognize any initial standard SPI instructions from the
controller. To address this possibility, it is recommended to issue a Continuous Read Mode Reset
instruction as the first instruction after a system Reset. Doing so will release the device from the
Continuous Read Mode and allow Standard SPI instructions to be recognized.
To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The
instruction is “FFh”. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are
needed to shift in instruction “FFFFh”.
W25Q80BV
- 40 -
7.2.21 Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed at
previously erased (FFh) memory locations. A Write Enable instruction must be executed before the device
will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is initiated by
driving the /CS pin low then shifting the instruction code “02h” followed by a 24-bit address (A23-A0) and
at least one data byte, into the DI pin. The /CS pin must be held low for the entire length of the instruction
while data is being sent to the device. The Page Program instruction sequence is shown in figure 19.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits)
should be set to 0. If the last address byte is not zero, and the number of clocks exceed the remaining
page length, the addressing will wrap to the beginning of the page. In some cases, less than 256 bytes (a
partial page) can be programmed without having any effect on other bytes within the same page. One
condition to perform a partial page program is that the number of clocks can not exceed the remaining
page length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the
page and overwrite previously sent data.
As with the write and erase instructions, the /CS pin must be driven high after the eighth bit of the last byte
has been latched. If this is not done the Page Program instruction will not be executed. After /CS is driven
high, the self-timed Page Program instruction will commence for a time duration of tpp (See AC
Characteristics). While the Page Program cycle is in progress, the Read Status Register instruction may
still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Page Program
cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register
is cleared to 0. The Page Program instruction will not be executed if the addressed page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (02h)
8 9 10 28 29 30 39
24-Bit Address
23 22 21 3 2 1
*
/CS
CLK
DI
(IO0)
40 41 42 43 44 45 46 47
Data Byte 2
48 49 50 52 53 54 55
2072
7 6 5 4 3 2 1 0
5139
0
31
0
32 33 34 35 36 37 38
Data Byte 1
7654321
*
Mode 0
Mode 3
Data Byte 3
2073
2074
2075
2076
2077
2078
2079
0
Data Byte 256
*76543210
*76543210
*
= MSB
*
Figure 19. Page Program Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 41 - Revision G
7.2.22 Quad Input Page Program (32h)
The Quad Page Program instruction allows up to 256 bytes of data to be programmed at previously
erased (FFh) memory locations using four pins: IO0, IO1, IO2, and IO3. The Quad Page Program can
improve performance for PROM Programmer and applications that have slow clock speeds <5MHz.
Systems with faster clock speed will not realize much benefit for the Quad Page Program instruction since
the inherent page program time is much greater than the time it take to clock-in the data.
To use Quad Page Program the Quad Enable in Status Register-2 must be set (QE=1). A Write Enable
instruction must be executed before the device will accept the Quad Page Program instruction (Status
Register-1, WEL=1). The instruction is initiated by driving the /CS pin low then shifting the instruction code
“32h” followed by a 24-bit address (A23-A0) and at least one data byte, into the IO pins. The /CS pin must
be held low for the entire length of the instruction while data is being sent to the device. All other functions
of Quad Page Program are identical to standard Page Program. The Quad Page Program instruction
sequence is shown in figure 20.
/CS
CLK Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (32h)
8 9 10 28 29 30
32 33 34 35 36 37
4 0
24-Bit Address
23 22 21 3 2 1 0
*
31
31
/CS
CLK
5 1
Byte 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte 2 Byte 3 Byte
256
0 4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
536
537
538
539
540
541
542
543
Mode 0
Mode 3
Byte
253 Byte
254 Byte
255
IO0
IO1
IO2
IO3
IO0
IO1
IO2
IO3
* * * * * * *
= MSB
*
Figure 20. Quad Input Page Program Instruction Sequence Diagram
W25Q80BV
- 42 -
7.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (20h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 21. Sector Erase Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 43 - Revision G
7.2.24 32KB Block Erase (52h)
The Block Erase instruction sets all memory within a specified block (32K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “52h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 22.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE1 (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (52h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 22. 32KB Block Erase Instruction Sequence Diagram
W25Q80BV
- 44 -
7.2.25 64KB Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Block Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure 2). The Block
Erase instruction sequence is shown in figure 23.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the
Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block Erase instruction
will commence for a time duration of tBE (See AC Characteristics). While the Block Erase cycle is in
progress, the Read Status Register instruction may still be accessed for checking the status of the BUSY
bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is finished and the
device is ready to accept other instructions again. After the Block Erase cycle has finished the Write
Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase instruction will not be
executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0)
bits (see Status Register Memory Protection table).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (D8h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 23. 64KB Block Erase Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 45 - Revision G
7.2.26 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The BUSY
bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to accept
other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is protected by
the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory Protection
table).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (C7h/60h)
High Impedance
Mode 0
Mode 3
Figure 24. Chip Erase Instruction Sequence Diagram
W25Q80BV
- 46 -
7.2.27 Erase / Program Suspend (75h)
The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase
operation or a Page Program operation and then read from or program/erase data to, any other sectors or
blocks. The Erase/Program Suspend instruction sequence is shown in figure 25.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status
Register instruction (01h) and Program instructions (02h, 32h, 42h) are not allowed during Program
Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.
The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the
Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page
Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend
instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required
to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to
0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after
Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the
Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding
Resume instruction “7Ah”.
Unexpected power off during the Erase/Program suspend state will reset the device and release the
suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or block
that was being suspended may become corrupted. When the device is powered up again, it is
recommended for the user to repeat the same Erase or Program operation that was interrupted, at the
same address location, to avoid the potention data corruption.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (75h)
High Impedance
Mode 0
Mode 3
tSUS
Accept instructions
Figure 25. Erase/Program Suspend Instruction Sequence
W25Q80BV
Publication Release Date: Augest 01, 2012
- 47 - Revision G
7.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (7Ah)
Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 26. Erase/Program Resume Instruction Sequence
W25Q80BV
- 48 -
7.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (B9h)
Mode 0
Mode 3
tDP
Power-down currentStand-by current
Figure 27. Deep Power-down Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 49 - Revision G
7.2.30 Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in figure 28a. Release from power-down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
28a. The Device ID values for the W25Q80BV is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in figure 28b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1)
the instruction is ignored and will not have any effects on the current cycle.
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (ABh)
Mode 0
Mode 3
tRES1
Power-down current Stand-by current
Figure 28a. Release Power-down Instruction Sequence
W25Q80BV
- 50 -
tRES2
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (ABh)
High Impedance
8 9 29 30 31
3 Dummy Bytes
23 22 210
*
Mode 0
Mode 3
76543210
*
32 33 34 35 36 37 38
Device ID
Power-down current Stand-by current
= MSB
*
Figure 28b. Release Power-down / Device ID Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 51 - Revision G
7.2.31 Read Manufacturer / Device ID (90h)
The Read Manufacturer/Device ID instruction is an alternative to the Release from Power-down / Device
ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID.
The Read Manufacturer/Device ID instruction is very similar to the Release from Power-down / Device ID
instruction. The instruction is initiated by driving the /CS pin low and shifting the instruction code “90h”
followed by a 24-bit address (A23-A0) of 000000h. After which, the Manufacturer ID for Winbond (EFh)
and the Device ID are shifted out on the falling edge of CLK with most significant bit (MSB) first as shown
in figure 29. The Device ID values for the W25Q80BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (90h)
High Impedance
8 9 10 28 29 30 31
Address (000000h)
23 22 21 3 2 1 0
Device ID
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Manufacturer ID (EFh)
40 41 42 44 45 46
7 6 5 4 3 2 1 0
*
4331
0
Mode 0
Mode 3
= MSB
*
Figure 29. Read Manufacturer / Device ID Diagram
W25Q80BV
- 52 -
7.2.32 Read Manufacturer / Device ID Dual I/O (92h)
The Manufacturer / Device ID Dual I/O instruction is an alternative to the Read Manufacturer/Device ID
instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID at 2x speed.
The Read Manufacturer / Device ID Dual I/O instruction is similar to the Fast Read Dual I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92h” followed by a
24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits, with the capability to input the
Address bits two bits per clock. After which, the Manufacturer ID for Winbond (EFh) and the Device ID are
shifted out 2 bits per clock on the falling edge of CLK with most significant bits (MSB) first as shown in
figure 30. The Device ID values for the W25Q80BV is listed in Manufacturer and Device Identification
table. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by
the Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to
the other. The instruction is completed by driving /CS high.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (92h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
7531
* *
6420
7 5 3 1
6 4 2 0
7531
6420
7 5 3 1
6 4 2 0
23
* *
A23-16 A15-8 A7-0 (00h) M7-0
/CS
CLK
DI
(IO0)
DO
(IO1)
24 25 26 27 28 29 30 31 32 33 34 36 37 383523
0
Mode 0
Mode 3
7 5 3 1
6 4 2 0
7531
6420
7531
6420
7 5 3
6 4 2
1
0
1
MFR ID Device ID MFR ID
(repeat) Device ID
(repeat)
IOs switch from
Input to Output
* ** *
= MSB
*
Figure 30. Read Manufacturer / Device ID Dual I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Dual I/O instruction.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 53 - Revision G
7.2.33 Read Manufacturer / Device ID Quad I/O (94h)
The Read Manufacturer / Device ID Quad I/O instruction is an alternative to the Read Manufacturer /
Device ID instruction that provides both the JEDEC assigned manufacturer ID and the specific device ID
at 4x speed.
The Read Manufacturer / Device ID Quad I/O instruction is similar to the Fast Read Quad I/O instruction.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94h” followed by a
24-bit address (A23-A0) of 000000h, 8-bit Continuous Read Mode Bits and then four clock dummy cycles,
with the capability to input the Address bits four bits per clock. After which, the Manufacturer ID for
Winbond (EFh) and the Device ID are shifted out four bits per clock on the falling edge of CLK with most
significant bit (MSB) first as shown in figure 31. The Device ID values for the W25Q80BV is listed in
Manufacturer and Device Identification table. If the 24-bit address is initially set to 000001h the Device ID
will be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read
continuously, alternating from one to the other. The instruction is completed by driving /CS high.
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (94h)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
5 1
4 0
23
Mode 0
Mode 3
IOs switch from
Input to Output
High Impedance 7 3
6 2
/CS
CLK
IO0
IO1
IO2
IO3
High Impedance
A23-16 A15-8 A7-0
(00h) M7-0
MFR ID Device ID
Dummy Dummy
/CS
CLK
IO0
IO1
IO2
IO3
23
0
1
2
3
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
5 1
4 0
7 3
6 2
24 25 26 27 28 29 30
MFR ID
(repeat) Device ID
(repeat) MFR ID
(repeat) Device ID
(repeat)
Figure 31. Read Manufacturer / Device ID Quad I/O Diagram
Note:
The “Continuous Read Mode” bits M7-0 must be set to Fxh to be compatible with Fast Read Quad I/O instruction.
W25Q80BV
- 54 -
7.2.34 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is unique to
each W25Q80BV device. The ID number can be used in conjunction with user software methods to help
prevent copying or cloning of a system. The Read Unique ID instruction is initiated by driving the /CS pin
low and shifting the instruction code “4Bh” followed by a four bytes of dummy clocks. After which, the 64-
bit ID is shifted out on the falling edge of CLK as shown in figure 32.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (4Bh)
High Impedance
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
/CS
CLK
DI
(IO0)
DO
(IO1)
24 25 26 27 28 29 30 31 32 33 34 36 37 383523
Mode 0
Mode 3
*
Dummy Byte 1 Dummy Byte 2
39 40 41 42
Dummy Byte 3 Dummy Byte 4
63 62 61 210
64-bit Unique Serial Number
100
101
102
High Impedance
= MSB
*
Figure 32. Read Unique ID Number Instruction Sequence
W25Q80BV
Publication Release Date: Augest 01, 2012
- 55 - Revision G
7.2.35 Read JEDEC ID (9Fh)
For compatibility reasons, the W25Q80BV provides several instructions to electronically determine the
identity of the device. The Read JEDEC ID instruction is compatible with the JEDEC standard for SPI
compatible serial memories that was adopted in 2003. The instruction is initiated by driving the /CS pin low
and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID byte for Winbond (EFh) and
two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling
edge of CLK with most significant bit (MSB) first as shown in figure 33. For memory type and capacity
values refer to Manufacturer and Device Identification table.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (9Fh)
High Impedance
8 9 10 12 13 14 15
Capacity ID7-0
/CS
CLK
DI
(IO0)
DO
(IO1)
16 17 18 19 20 21 22 23
Manufacturer ID (EFh)
24 25 26 28 29 30
7 6 5 4 3 2 1 0
*
2715
Mode 0
Mode 3
11
7 6 5 4 3 2 1 0
*
Memory Type ID15-8
= MSB
*
Figure 33. Read JEDEC ID Instruction Sequence
W25Q80BV
- 56 -
7.2.36 Read SFDP Register (5Ah)
The W25Q80BV features a 256-Byte Serial Flash Discoverable Parameter (SFDP) register that contains
information about devices operational capability such as available commands, timing and other features.
The SFDP parameters are stored in one or more Parameter Identification (PID) tables. Currently only one
PID table is specified but more may be added in the future. The Read SFDP Register instruction is
compatible with the SFDP standard initially established in 2010 for PC and other applications. Most
Winbond SpiFlash Memories shipped after June 2010 (date code 1023 and beyond) support the SFDP
feature as specified in the applicable datasheet.
The Read SFDP instruction is initiated by driving the /CS pin low and shifting the instruction code “5Ah”
followed by a 24-bit address (A23-A0)(1) into the DI pin. Eight “dummy” clocks are also required before the
SFDP register contents are shifted out on the falling edge of the 40th CLK with most significant bit (MSB)
first as shown in figure 34. For SFDP register values and descriptions, please refer to the Winbond
Application Note for SFDP Definition table.
Note: 1. A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-Byte SFDP Register.
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (5Ah)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Byte
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
7 6 5 4 3 2 1 0
4331
0
= MSB
*
Figure 34. Read SFDP Register Instruction Sequence Diagram
W25Q80BV
Publication Release Date: Augest 01, 2012
- 57 - Revision G
7.2.37 Erase Security Registers (44h)
The W25Q80BV offers three 256-byte Security Registers which can be erased and programmed
individually. These registers may be used by the system manufacturers to store security and other
important information separately from the main memory array.
The Erase Security Register instruction is similar to the Sector Erase instruction. A Write Enable
instruction must be executed before the device will accept the Erase Security Register Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the three security registers.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0 0 0 1
0 0 0 0
Don’t Care
Security Register #2
00h
0 0 1 0
0 0 0 0
Don’t Care
Security Register #3
00h
0 0 1 1
0 0 0 0
Don’t Care
The Erase Security Register instruction sequence is shown in figure 35. The /CS pin must be driven high
after the eighth bit of the last byte has been latched. If this is not done the instruction will not be executed.
After /CS is driven high, the self-timed Erase Security Register operation will commence for a time
duration of tSE (See AC Characteristics). While the Erase Security Register cycle is in progress, the Read
Status Register instruction may still be accessed for checking the status of the BUSY bit. The BUSY bit is
a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept
other instructions again. After the Erase Security Register cycle has finished the Write Enable Latch (WEL)
bit in the Status Register is cleared to 0. The Security Register Lock Bits LB[3:1] in the Status Register-2
can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding security
register will be permanently locked, Erase Security Register instruction to that register will be ignored (See
7.1.9 for detail descriptions).
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (44h)
High Impedance
8 9 29 30 31
24-Bit Address
23 22 210
*
Mode 0
Mode 3
= MSB
*
Figure 35. Erase Security Registers Instruction Sequence
W25Q80BV
- 58 -
7.2.38 Program Security Registers (42h)
The Program Security Register instruction is similar to the Page Program instruction. It allows from one
byte to 256 bytes of security register data to be programmed at previously erased (FFh) memory locations.
A Write Enable instruction must be executed before the device will accept the Program Security Register
Instruction (Status Register bit WEL= 1). The instruction is initiated by driving the /CS pin low then shifting
the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte, into the DI pin.
The /CS pin must be held low for the entire length of the instruction while data is being sent to the device.
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0 0 0 1
0 0 0 0
Byte Address
Security Register #2
00h
0 0 1 0
0 0 0 0
Byte Address
Security Register #3
00h
0 0 1 1
0 0 0 0
Byte Address
The Program Security Register instruction sequence is shown in figure 36. The Security Register Lock
Bits LB[3:1] in the Status Register-2 can be used to OTP protect the security registers. Once a lock bit is
set to 1, the corresponding security register will be permanently locked, Program Security Register
instruction to that register will be ignored (See 7.1.9, 7.2.21 for detail descriptions).
/CS
CLK
DI
(IO0)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (42h)
8 9 10 28 29 30 39
24-Bit Address
23 22 21 3 2 1
*
/CS
CLK
DI
(IO0)
40 41 42 43 44 45 46 47
Data Byte 2
48 49 50 52 53 54 55
2072
7 6 5 4 3 2 1 0
5139
0
31
0
32 33 34 35 36 37 38
Data Byte 1
7654321
*
Mode 0
Mode 3
Data Byte 3
2073
2074
2075
2076
2077
2078
2079
0
Data Byte 256
*76543210
*76543210
*
= MSB
*
Figure 36. Program Security Registers Instruction Sequence
W25Q80BV
Publication Release Date: Augest 01, 2012
- 59 - Revision G
7.2.39 Read Security Registers (48h)
The Read Security Register instruction is similar to the Fast Read instruction and allows one or more data
bytes to be sequentially read from one of the three security registers. The instruction is initiated by driving
the /CS pin low and then shifting the instruction code “48h” followed by a 24-bit address (A23-A0) and
eight “dummy” clocks into the DI pin. The code and address bits are latched on the rising edge of the CLK
pin. After the address is received, the data byte of the addressed memory location will be shifted out on
the DO pin at the falling edge of CLK with most significant bit (MSB) first. The byte address is
automatically incremented to the next byte address after each byte of data is shifted out. Once the byte
address reaches the last byte of the register (byte FFh), it will reset to 00h, the first byte of the register,
and continue to increment. The instruction is completed by driving /CS high. The Read Security Register
instruction sequence is shown in figure 37. If a Read Security Register instruction is issued while an Erase,
Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any effects on
the current cycle. The Read Security Register instruction allows clock rates from D.C. to a maximum of FR
(see AC Electrical Characteristics).
ADDRESS
A23-16
A15-12
A11-8
A7-0
Security Register #1
00h
0 0 0 1
0 0 0 0
Byte Address
Security Register #2
00h
0 0 1 0
0 0 0 0
Byte Address
Security Register #3
00h
0 0 1 1
0 0 0 0
Byte Address
/CS
CLK
DI
(IO0)
DO
(IO1)
Mode 0
Mode 3 0 1 2 3 4 5 6 7
Instruction (48h)
High Impedance
8 9 10 28 29 30 31
24-Bit Address
23 22 21 3 2 1 0
Data Out 1
*
/CS
CLK
DI
(IO0)
DO
(IO1)
32 33 34 35 36 37 38 39
Dummy Byte
High Impedance
40 41 42 44 45 46 47 48 49 50 51 52 53 54 55
765432107
Data Out 2
*
76543210
*
7 6 5 4 3 2 1 0
4331
0
= MSB
*
Figure 37. Read Security Registers Instruction Sequence
W25Q80BV
- 60 -
8. ELECTRICAL CHARACTERISTICS
8.1 Absolute Maximum Ratings (1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
VCC
–0.6 to +4.6
V
Voltage Applied to Any Pin
VIO
Relative to Ground
–0.6 to VCC+0.4
V
Transient Voltage on any Pin
VIOT
<20nS Transient
Relative to Ground
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
–65 to +150
°C
Lead Temperature
TLEAD
See Note (2)
°C
Electrostatic Discharge Voltage
VESD
Human Body Model(3)
–2000 to +2000
V
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside
of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device reliability.
Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the
European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
8.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
MAX
Supply Voltage
VCC
FR = 80MHz, fR = 50MHz
FR = 104MHz, fR = 50MHz
2.7
3.0
3.6
3.6
V
Ambient Temperature,
Operating
TA
Commercial
Industrial / Auto. Grade 3(1)
Industrial Plus / Auto. Grade 2(1)
0
-40
-40
+70
+85
+105
°C
Note:
1. For Industrial Plus, Automotive Grade 3 & 2 devices, please contact Winbond for more information.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 61 - Revision G
8.3 Power-up Timing and Write Inhibit Threshold
Parameter
Symbol
spec
Unit
MIN
MAX
VCC (min) to /CS Low
tVSL(1)
10
µs
Time Delay Before Write Instruction
tPUW(1)
5
ms
Write Inhibit Threshold Voltage
VWI(1)
1.0
2.0
V
Note:
1. These parameters are characterized only.
VCC
tVSL Read Instructions
Allowed Device is fully
Accessible
tPUW
/CS must track VCC
Program, Erase and Write Instructions are ignored
Reset
State
VCC (max)
VCC (min)
VWI
Time
Figure 38a. Power-up Timing and Voltage Levels
Figure 38b. Power-up, Power-Down Requirement
W25Q80BV
- 62 -
8.4 DC Electrical Characteristics
PARAMETER
SYMBOL
CONDITIONS
SPEC
UNIT
MIN
TYP
MAX
Input Capacitance
CIN(1)
VIN = 0V(1)
6
pF
Output Capacitance
Cout(1)
VOUT = 0V(1)
8
pF
Input Leakage
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
/CS = VCC,
VIN = GND or VCC
25
50
µA
Power-down Current
ICC2
/CS = VCC,
VIN = GND or VCC
1
5
µA
Current Read Data /
Dual /Quad 1MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
4/5/6
6/7.5/9
mA
Current Read Data /
Dual /Quad 33MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
6/7/8
9/10.5/12
mA
Current Read Data /
Dual /Quad 50MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
7/8/9
10/12/13.5
mA
Current Read Data /
Dual Output Read/Quad
Output Read 80MHz(2)
ICC3
C = 0.1 VCC / 0.9 VCC
DO = Open
10/11/12
15/16.5/18
mA
Current Write Status
Register
ICC4
/CS = VCC
8
12
mA
Current Page Program
ICC5
/CS = VCC
20
25
mA
Current Sector/Block
Erase
ICC6
/CS = VCC
20
25
mA
Current Chip Erase
ICC7
/CS = VCC
20
25
mA
Input Low Voltage
VIL
VCC x 0.3
V
Input High Voltage
VIH
VCC x 0.7
V
Output Low Voltage
VOL
IOL = 100 µA
0.2
V
Output High Voltage
VOH
IOH = –100 µA
VCC – 0.2
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 63 - Revision G
8.5 AC Measurement Conditions
PARAMETER
SYMBOL
SPEC
UNIT
MIN
MAX
Load Capacitance
CL
30
pF
Input Rise and Fall Times
TR, TF
5
ns
Input Pulse Voltages
VIN
0.2 VCC to 0.8 VCC
V
Input Timing Reference Voltages
IN
0.3 VCC to 0.7 VCC
V
Output Timing Reference Voltages
OUT
0.5 VCC to 0.5 VCC
V
Note:
1. Output Hi-Z is defined as the point where data out is no longer driven.
Input and Output
Timing Reference Levels
Input Levels
0.8 VCC
0.2 VCC
0.5 VCC
Figure 39. AC Measurement I/O Waveform
W25Q80BV
- 64 -
8.6 AC Electrical Characteristics
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
Clock frequency for all instructions
except Read Data instruction (03h)
2.7V-3.6V VCC
FR
fC
D.C.
80
MHz
Clock frequency for all instructions
except Read Data instruction (03h)
3.0V-3.6V VCC
FR
fC
D.C.
104
MHz
Clock frequency for Read Data instruction (03h)
fR
D.C.
50
MHz
Clock High, Low Time
for all instructions except Read Data (03h)
tCLH1,
tCLL1(1)
4
ns
Clock High, Low Time
for Read Data (03h) instruction
tCRLH,
tCRLL(1)
8
ns
Clock Rise Time peak to peak
tCLCH(2)
0.1
V/ns
Clock Fall Time peak to peak
tCHCL(2)
0.1
V/ns
/CS Active Setup Time relative to CLK
tSLCH
tCSS
5
ns
/CS Not Active Hold Time relative to CLK
tCHSL
5
ns
Data In Setup Time
tDVCH
tDSU
2
ns
Data In Hold Time
tCHDX
tDH
5
ns
/CS Active Hold Time relative to CLK
tCHSH
5
ns
/CS Not Active Setup Time relative to CLK
tSHCH
5
ns
/CS Deselect Time (for Array Read Array Read)
tSHSL1
tCSH
10
ns
/CS Deselect Time (for Erase or Program Read
Status Registers)
Volatile Status Register Write Time
tSHSL2
tCSH
50
50
ns
Output Disable Time
tSHQZ(2)
tDIS
7
ns
Clock Low to Output Valid
2.7V-3.6V / 3.0V-3.6V
tCLQV1
tV1
7/6
ns
Clock Low to Output Valid (for Read ID instructions)
2.7V-3.6V / 3.0V-3.6V
tCLQV2
tV2
8.5/7.5
ns
Output Hold Time
tCLQX
tHO
0
ns
/HOLD Active Setup Time relative to CLK
tHLCH
5
ns
Continued – next page
W25Q80BV
Publication Release Date: Augest 01, 2012
- 65 - Revision G
8.7 AC Electrical Characteristics (cont’d)
DESCRIPTION
SYMBOL
ALT
SPEC
UNIT
MIN
TYP
MAX
/HOLD Active Hold Time relative to CLK
tCHHH
5
ns
/HOLD Not Active Setup Time relative to CLK
tHHCH
5
ns
/HOLD Not Active Hold Time relative to CLK
tCHHL
5
ns
/HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
/HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before /CS Low
tWHSL(3)
20
ns
Write Protect Hold Time After /CS High
tSHWL(3)
100
ns
/CS High to Power-down Mode
tDP(2)
3
µs
/CS High to Standby Mode without Electronic Signature
Read
tRES1(2)
3
µs
/CS High to Standby Mode with Electronic Signature
Read
tRES2(2)
1.8
µs
/CS High to next Instruction after Suspend
tSUS(2)
20
µs
Write Status Register Time
tW
10
15
ms
Byte Program Time (First Byte) (4)
tBP1
30
50
µs
Additional Byte Program Time (After First Byte) (4)
tBP2
2.5
12
µs
Page Program Time
tPP
0.7
3
ms
Sector Erase Time (4KB)
tSE
30
200/400(5)
ms
Block Erase Time (32KB)
tBE1
120
800
ms
Block Erase Time (64KB)
tBE2
150
1,000
ms
Chip Erase Time
tCE
2
6
s
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP[1:0]=(0,1).
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
5. Max Value tSE with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
W25Q80BV
- 66 -
8.8 Serial Output Timing
/CS
CLK
IO
output
tCLQX tCLQV
tCLQX tCLQV tSHQZtCLL
LSB OUT
tCLH
MSB OUT
8.9 Serial Input Timing
/CS
CLK
IO
input
tCHSL
MSB IN
tSLCH
tDVCH tCHDX
tSHCHtCHSH
tCLCH tCHCL
LSB IN
tSHSL
8.10 /HOLD Timing
/CS
CLK
IO
output
/HOLD
tCHHL tHLCH
tCHHH
tHHCH
tHLQZ tHHQX
IO
input
8.11 /WP Timing
/CS
CLK
/WP
tWHSL tSHWL
IO
input
Write Status Register is allowed Write Status Register is not allowed
W25Q80BV
Publication Release Date: Augest 01, 2012
- 67 - Revision G
9. PACKAGE SPECIFICATION
9.1 8-Pin SOIC 150-mil (Package Code SN)
L
θ
c
D
A1
A
e
b
SEATING PLANE
Y
0.25
GAUGE PLANE
EHE
4
1
58
L
θ
c
D
A1
A
e
bbb
SEATING PLANE
Y
0.25
GAUGE PLANE
EHE
EHE
4
1
58
SYMBOL
MILLIMETERS
INCHES
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
c
0.19
0.25
0.008
0.010
E(3)
3.80
4.00
0.150
0.157
D(3)
4.80
5.00
0.188
0.196
e(2)
1.27 BSC
0.050 BSC
HE
5.80
6.20
0.228
0.244
Y(4)
---
0.10
---
0.004
L
0.40
1.27
0.016
0.050
θ
0°
10°
0°
10°
Notes:
1. Controlling dimensions: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads coplanarity with respect to seating plane shall be within 0.004 inches.
W25Q80BV
- 68 -
9.2 8-Pin VSOP 150-mil (Package Code SV)
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
---
---
1.00
---
---
0.039
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
0.75
0.80
0.85
0.030
0.031
0.033
Q
0.19
0.20
0.21
0.007
0.008
0.008
b
0.33
---
0.51
0.013
---
0.020
c
0.125 BSC
0.005 BSC
D
4.80
4.90
5.00
0.189
0.193
0.197
E
5.80
6.00
6.20
0.228
0.236
0.244
E1
3.80
3.90
4.00
0.150
0.154
0.157
e
1.27 BSC
0.050 BSC
L
0.40
0.71
1.27
0.016
0.028
0.050
θ
0°
---
10°
0°
---
10°
Notes:
1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions and gate burrs shall not exceed
0.15mm per side.
2. Dimension “E1” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 0.25mm per
side.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 69 - Revision G
9.3 8-Pin SOIC 208-mil (Package Code SS)
θ
GAUGE PLANE
θ
GAUGE PLANE
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
1.75
1.95
2.16
0.069
0.077
0.085
A1
0.05
0.15
0.25
0.002
0.006
0.010
A2
1.70
1.80
1.91
0.067
0.071
0.075
b
0.35
0.42
0.48
0.014
0.017
0.019
C
0.19
0.20
0.25
0.007
0.008
0.010
D
5.18
5.28
5.38
0.204
0.208
0.212
D1
5.13
5.23
5.33
0.202
0.206
0.210
E
5.18
5.28
5.38
0.204
0.208
0.212
E1
5.13
5.23
5.33
0.202
0.206
0.210
e(2)
1.27 BSC.
0.050 BSC.
H
7.70
7.90
8.10
0.303
0.311
0.319
L
0.50
0.65
0.80
0.020
0.026
0.031
y
---
---
0.10
---
---
0.004
θ
0°
---
8°
0°
---
8°
Notes:
1. Controlling dimensions: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E1 do not include mold flash protrusions and should be measured from the bottom of the package.
4. Formed leads coplanarity with respect to seating plane shall be within 0.004 inches.
W25Q80BV
- 70 -
9.4 8-Pin VSOP 208-mil (Package Code ST)
θ
θ
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
―
―
1.00
―
―
0.039
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
0.75
0.80
0.85
0.030
0.031
0.033
b
0.35
0.42
0.48
0.014
0.017
0.019
c
0.127 REF
0.005 REF
D
5.18
5.28
5.38
0.204
0.208
0.212
E
7.70
7.90
8.10
0.303
0.311
0.319
E1
5.18
5.28
5.38
0.204
0.208
0.212
e
―
1.27
―
―
0.050
―
L
0.50
0.65
0.80
0.020
0.026
0.031
y
―
―
0.10
―
―
0.004
θ
0°
―
8°
0°
―
8°
W25Q80BV
Publication Release Date: Augest 01, 2012
- 71 - Revision G
9.5 8-Pin PDIP 300-mil (Package Code DA)
SYMBO
L
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
---
---
5.33
---
---
0.210
A1
0.38
---
---
0.015
---
---
A2
3.18
3.30
3.43
0.125
0.130
0.135
D
9.02
9.27
10.16
0.355
0.365
0.400
E
7.62 BSC.
0.300 BSC.
E1
6.22
6.35
6.48
0.245
0.250
0.255
L
2.92
3.30
3.81
0.115
0.130
0.150
eB
8.51
9.02
9.53
0.335
0.355
0.375
θ°
0°
7°
15°
0°
7°
15°
W25Q80BV
- 72 -
9.6 8-Pad WSON 6x5mm (Package Code ZP)
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
0.70
0.75
0.80
0.028
0.030
0.031
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.35
0.40
0.48
0.014
0.016
0.019
C
---
0.20 REF.
---
---
0.008 REF.
---
D
5.90
6.00
6.10
0.232
0.236
0.240
D2
3.35
3.40
3.45
0.132
0.134
0.136
E
4.90
5.00
5.10
0.193
0.197
0.201
E2
4.25
4.30
4.35
0.167
0.169
0.171
e(2)
1.27 BSC.
0.050 BSC.
L
0.55
0.60
0.65
0.022
0.024
0.026
y
0.00
---
0.075
0.000
---
0.003
W25Q80BV
Publication Release Date: Augest 01, 2012
- 73 - Revision G
8-Pad WSON 6x5mm Cont’d.
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
SOLDER PATTERN
M
3.40
0.134
N
4.30
0.169
P
6.00
0.236
Q
0.50
0.020
R
0.75
0.026
Notes:
1. Advanced Packaging Information; please contact Winbond for the latest minimum and maximum specifications.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E do not include mold flash protrusions and should be measured from the bottom of the package.
4. The metal pad area on the bottom center of the package is connected to the device ground (GND pin). Avoid placement of
exposed PCB vias under the pad.
W25Q80BV
- 74 -
9.7 8-Pad USON 2x3-mm (Package Code UX)
Note: Exposed pad dimension D2 & E2 may be different by die size.
SYMBO
L
MILLIMETER
INCHES
MIN
TYP.
MAX
MIN
TYP.
MAX
A
0.50
0.55
0.60
0.020
0.022
0.024
A1
0.00
0.02
0.05
0.000
0.001
0.002
b
0.20
0.25
0.30
0.008
0.010
0.012
C
―
0.15
REF
―
―
0.006
―
D
1.90
2.00
2.10
0.075
0.079
0.083
D2
1.55
1.60
1.65
0.061
0.063
0.065
E
2.90
3.00
3.10
0.114
0.118
0.122
E2
0.15
0.20
0.25
0.006
0.008
0.010
e
―
0.50
―
―
0.020
―
L
0.40
0.45
0.50
0.016
0.018
0.020
L1
―
0.10
―
―
0.004
―
L3
0.30
0.35
0.40
0.012
0.014
0.016
y
0.000
―
0.075
0.000
―
0.003
PIN 1 INDENT
D
E
A
A1
y
D2
L3
E2
L1
e
b
L
C
W25Q80BV
Publication Release Date: Augest 01, 2012
- 75 - Revision G
9.8 24-Ball TFBGA 8x6-mm (Package Code TB, 5x5-1 ball array)
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
A
---
---
1.20
---
---
0.047
A1
0.25
0.30
0.35
0.010
0.012
0.014
A2
---
0.85
---
---
0.033
---
b
0.35
0.40
0.45
0.014
0.016
0.018
D
7.90
8.00
8.10
0.311
0.315
0.319
D1
4.00 BSC
0.157 BSC
E
5.90
6.00
6.10
0.232
0.236
0.240
E1
4.00 BSC
0.157 BSC
SE
1.00 TYP
0.039 TYP
SD
1.00 TYP
0.039 TYP
e
1.00 BSC
0.039 BSC
Note:
Ball land: 0.45mm. Ball Opening: 0.35mm
PCB ball land suggested <= 0.35mm
W25Q80BV
- 76 -
9.9 24-Ball TFBGA 8x6-mm (Package Code TC, 6x4 ball array)
SYMBOL
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
A
---
---
1.20
---
---
0.047
A1
0.25
0.30
0.35
0.010
0.012
0.014
b
0.35
0.40
0.45
0.014
0.016
0.018
D
7.95
8.00
8.05
0.313
0.315
0.317
D1
5.00 BSC
0.197 BSC
E
5.95
6.00
6.05
0.234
0.236
0.238
E1
3.00 BSC
0.118 BSC
e
1.00 BSC
0.039 BSC
W25Q80BV
Publication Release Date: Augest 01, 2012
- 77 - Revision G
10. ORDERING INFORMATION
Notes:
1. The “W” prefix is not included on the part marking.
2. Only the 2nd letter is used for the part marking; WSON package type ZP is not used for the part marking.
3. Standard bulk shipments are in Tube (shape E). Please specify alternate packing method, such as Tape and
Reel (shape T) or Tray (shape S), when placing orders.
4. For shipments with OTP feature enabled devices (P), please specify when placing orders.
W(1) 25Q 80B V xx(2)
W = Winbond
25Q = SpiFlash Serial Flash Memory with 4KB sectors, Dual/Quad I/O
80B = 8M-bit
V = 2.7V to 3.6V
G = Green Package (Lead-free, RoHS Compliant, Halogen-free (TBBA), Antimony-Oxide-free Sb2O3)
P = Green Package with Status Register Power-Down & OTP enabled
(3,4)
SN = SOIC-8 150-mil SV = VSOP-8 150-mil ZP = WSON-8 6x5-mm UX = USON-8 2x3-mm
SS = SOIC-8 208-mil ST = VSOP-8 208-mil DA = PDIP-8 300-mil
TB = 5x5-1 balls TFBGA 8x6-mm TC = 6x4 balls TFBGA 8x6-mm
I = Industrial (-40°C to +85°C) J = Industrial Plus (-40°C to +105°C)
B = Automotive Grade 3 (-40°C to +85°C) A = Automotive Grade 2 (-40°C to +105°C)
W25Q80BV
- 78 -
10.1 Valid Part Numbers and Top Side Marking
The following table provides the valid part numbers for the W25Q80BV SpiFlash Memory. Please contact
Winbond for specific availability by density and package type. Winbond SpiFlash memories use an 12-digit
Product Number for ordering. However, due to limited space, the Top Side Marking on all packages use
an abbreviated 10-digit number.
Part Numbers for Industrial Grade Temperature:
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SN
SOIC-8 150mil
8M-bit
W25Q80BVSNIG
W25Q80BVSNIP
25Q80BVNIG
25Q80BVNIP
SV(3)
VSOP-8 150mil
8M-bit
W25Q80BVSVIG
W25Q80BVSVIP
25Q80BVVIG
25Q80BVVIP
SS
SOIC-8 208mil
8M-bit
W25Q80BVSSIG
W25Q80BVSSIP
25Q80BVSIG
25Q80BVSIP
ST(3)
VSOP-8 208mil
8M-bit
W25Q80BVSTIG
W25Q80BVSTIP
25Q80BVTIG
25Q80BVTIP
ZP(1)
WSON-8 6x5mm
8M-bit
W25Q80BVZPIG
W25Q80BVZPIP
25Q80BVIG
25Q80BVIP
UX(2)(3)
USON-8 2x3mm
8M-bit
W25Q80BVUXIG
W25Q80BVUXIP
8Dxxx 0Gxxxx
8Dxxx 0Pxxxx
DA
PDIP-8 300mil
8M-bit
W25Q80BVDAIG
W25Q80BVDAIP
25Q80BVAIG
25Q80BVAIP
TB(3)
TFBGA-24 8x6mm
5x5-1 ball array
8M-bit
W25Q80BVTBIG
W25Q80BVTBIP
25Q80BVBIG
25Q80BVBIP
TC(3)
TFBGA-24 8x6mm
6x4 ball array
8M-bit
W25Q80BVTCIG
W25Q80BVTCIP
25Q80BVCIG
25Q80BVCIP
Notes:
1. WSON package type ZP is not used in the top side marking.
2. USON package type UX has special top marking due to size limitation.
8 = 8Mb; D = W25Q series, 3V; 0 = Standard part; G = Green; P = OTP enabled.
3. These Package types are Special Order only, please contact Winbond for more information.
W25Q80BV
Publication Release Date: Augest 01, 2012
- 79 - Revision G
Part Numbers for Industrial Plus Grade Temperature(3):
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SN
SOIC-8 150mil
8M-bit
W25Q80BVSNJG
W25Q80BVSNJP
25Q80BVNJG
25Q80BVNJP
SS
SOIC-8 208mil
8M-bit
W25Q80BVSSJG
W25Q80BVSSJP
25Q80BVSJG
25Q80BVSJP
ZP(1)(2)
WSON-8 6x5mm
8M-bit
W25Q80BVZPJG
W25Q80BVZPJP
25Q80BVJG
25Q80BVJP
UX(2)(4)
USON-8 2x3mm
8M-bit
W25Q80BVUXJG
W25Q80BVUXJP
8Dxxx 0Gxxxx
8Dxxx 0Pxxxx
Part Numbers for Automotive Grade 3 Temperature(3):
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SN
SOIC-8 150mil
8M-bit
W25Q80BVSNBG
W25Q80BVSNBP
25Q80BVNBG
25Q80BVNBP
SS
SOIC-8 208mil
8M-bit
W25Q80BVSSBG
W25Q80BVSSBP
25Q80BVSBG
25Q80BVSBP
ZP(1)(2)
WSON-8 6x5mm
8M-bit
W25Q80BVZPBG
W25Q80BVZPBP
25Q80BVBG
25Q80BVBP
UX(2)(4)
USON-8 2x3mm
8M-bit
W25Q80BVUXBG
W25Q80BVUXBP
8Dxxx 0Gxxxx
8Dxxx 0Pxxxx
Part Numbers for Automotive Grade 2 Temperature(3):
PACKAGE TYPE
DENSITY
PRODUCT NUMBER
TOP SIDE MARKING
SN
SOIC-8 150mil
8M-bit
W25Q80BVSNAG
W25Q80BVSNAP
25Q80BVNAG
25Q80BVNAP
SS
SOIC-8 208mil
8M-bit
W25Q80BVSSAG
W25Q80BVSSAP
25Q80BVSAG
25Q80BVSAP
ZP(1)(2)
WSON-8 6x5mm
8M-bit
W25Q80BVZPAG
W25Q80BVZPAP
25Q80BVAG
25Q80BVAP
UX(2)(4)
USON-8 2x3mm
8M-bit
W25Q80BVUXAG
W25Q80BVUXAP
8Dxxx 0Gxxxx
8Dxxx 0Pxxxx
Notes:
1. WSON package type ZP is not used in the top side marking.
2. These Package types are Special Order only, please contact Winbond for more information.
3. For Industrial Plus, Automotive Grade 2 & Grade 3 Temperature parts, please contact Winbond
for more information and availability.
4. USON package type UX has special top marking due to size limitation.
8 = 8Mb; D = W25Q series, 3V; 0 = Standard part; G = Green; P = OTP enabled.
W25Q80BV
- 80 -
11. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A
03/26/09
New Create Preliminary
B
08/20/09
5~8, 45 & 46,
65~71
53
Removed SOIC-16 package
Added PDIP-8 package
Updated package diagrams
Updated Suspend/Resume description
Corrected UID waveform
C
07/08/10
50, 54
63, 66
68-71
5, 9, 20, 55-57
5, 73 & 74
Corrected 90h & 9Fh diagrams
Updated AC/DC parameters
Updated package dimensions
Added SFDP feature
Added automotive temperature
D
10/06/10
All
45
Removed Preliminary designator
Updated diagrams
Updated Suspend description
E
11/01/11
5, 74
Removed notes for SOIC8 150mil
F
04/23/12
6-8, 68, 70, 74-78
60, 77-79
55
Added VSOP, USON & TFBGA packages
Updated operating temperature grades
Referred to SFDP definition application note
G
08/01/12
16-17
61
Updated status register memory protection table.
Add power on-off time sequence
Update tPUW min amd Remove tPUW max
Trademarks
Winbond and SpiFlash are trademarks of Winbond Electronics Corporation.
All other marks are the property of their respective owner.
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components in systems
or equipment intended for surgical implantation, atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for
other applications intended to support or sustain life. Further more, Winbond products are not intended for
applications wherein failure of Winbond products could result or lead to a situation wherein personal injury,
death or severe property or environmental damage could occur. Winbond customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Winbond for any
damages resulting from such improper use or sales.
Information in this document is provided solely in connection with Winbond products. Winbond
reserves the right to make changes, corrections, modifications or improvements to this document
and the products and services described herein at any time, without notice.