8-Bit Serial-Input DMOS Power Driver
A6B595
5
Allegro MicroSystems, Inc.
115 Northeast Cutoff
Worcester, Massachusetts 01615-0036 U.S.A.
1.508.853.5000; www.allegromicro.com
Limits
Characteristic Symbol Test Conditions Min. Typ. Max. Units
Output Breakdown V(BR)DSX I
O = 1 mA 50 — — V
Voltage
Off-State Output IDSX V
O = 40 V, VDD = 5.5 V — 0.1 5.0 μA
Current V
O = 40 V, VDD = 5.5 V, TA = 125°C — 0.15 8.0 μA
Static Drain-Source rDS(on) I
O = 100 mA, VDD = 4.5 V — 4.2 5.7 Ω
On-State Resistance I
O = 100 mA, VDD = 4.5 V, TA = 125°C — 6.8 9.5 Ω
I
O = 350 mA, VDD = 4.5 V (see note) — 5.5 8.0 Ω
Nominal Output ION V
DS(on) = 0.5 V, TA = 85°C — 90 — mA
Current
Logic Input Current IIH VI = VDD = 5.5 V — — 1.0 μA
I
IL VI = 0, VDD = 5.5 V — — -1.0 μA
SERIAL-DATA VOH I
OH = -20 μA, VDD = 4.5 V 4.4 4.49 — V
Output Voltage I
OH = -4 mA, VDD = 4.5 V 4.0 4.2 — V
V
OL I
OL = 20 μA, VDD = 4.5 V — 0.005 0.1 V
I
OL = 4 mA, VDD = 4.5 V — 0.3 0.5 V
Prop. Delay Time tPLH I
O = 100 mA, CL = 30 pF — 150 — ns
t
PHL I
O = 100 mA, CL = 30 pF — 90 — ns
Output Rise Time tr I
O = 100 mA, CL = 30 pF — 200 — ns
Output Fall Time tf I
O = 100 mA, CL = 30 pF — 200 — ns
Supply Current IDD(OFF) V
DD = 5.5 V, Outputs OFF — 20 100 μA
I
DD(ON) V
DD = 5.5 V, Outputs ON — 150 300 μA
I
DD(fclk) f
clk = 5 MHz, CL = 30 pF, Outputs OFF — 0.4 5.0 mA
Typical Data is at VDD = 5 V and is for design information only.
NOTE — Pulse test, duration 100 μs, duty cycle 2%.
ELECTRICAL CHARACTERISTICS at TA = +25°C, VDD = 5 V, tir = tif 10 ns (unless otherwise
specifi ed).