2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–66 March 13, 2000-11
FEATURES
• High Current Transfer Ratio, 800%
• Low Input Current, 0.5 mA
• High Output Current, 60 mA
• Isolation Test Voltage, 5300 V
RMS
• TTL Compatible Output,
V
OL
=0.1 V
• High Common Mode Rejection, 500 V/
µ
s
• Adjustable Bandwidth–Access to Base
• Standard Molded Dip Plastic Package
• Underwriters Lab File #E52744
• VDE #0884 Approval Available with
Option 1
APPLICATIONS
• Logic Ground Isolation–TTL/TTL, TTL/CMOS,
CMOS/CMOS, CMOS/TTL
• EIA RS 232C Line Receiver
• Low Input Current Line Receiver–Long Lines,
Party Lines
• Telephone Ring Detector
• 117 VAC Line Voltage Status Indication–Low
Input Power Dissipation
• Low Power Systems–Ground Isolation
DESCRIPTION
High common mode transient immunity and very
high current ratio together with 5300 V
RMS
insula-
tion are achieved by coupling an LED with an inte-
grated high gain photo detector in an eight pin
dual-in-line package. Separate pins for the photo-
diode and output stage enable TTL compatible sat-
uration voltages with high speed operation.
Photodarlington operation is achieved by tying the
V
CC
and
V
O
terminals together. Access to the base
terminal allows adjustment to the gain bandwidth.
The 6N138 is ideal for TTL applications since the
300% minimum current transfer ratio with an LED
current of 1.6 mA enables operation with one unit
load-in and one unit load-out with a 2.2 k
Ω
pull-up
resistor.
The 6N139 is best suited for low power logic appli-
cations involving CMOS and low power TTL. A
400% current transfer ratio with only 0.5 mA of LED
current is guaranteed from 0
°
C to 70
°
C.
Caution:
Due to the small geometries of this device, it should be
handled with Electrostatic Discharge (ESD) precautions.
Proper grounding would prevent damage further and/or
degradation which may be induced by ESD.
V
DE
Maximum Ratings
Emitter
Reverse Voltage................................................................................ 5.0 V
Detector
Forward Current..............................................................................25 mA
Supply and Output Voltage,
V
CC
(pin 8-5),
V
O
(pin 6-5)
6N138................................................................................ –0.5 to 7.0 V
6N139................................................................................. –0.5 to 18 V
Emitter-Base Reverse Voltage (pin 5-7)............................................ 0.5 V
Average Input Current ....................................................................20 mA
Peak Input Current (50% Duty Cycle–1.0 ms pulse width).............40 mA
Peak Transient Input Current (
t
p
≤
1.0
µ
s, 300 pps ............................1.0 A
Output Current
I
O
(pin 6) ................................................................60 mA
Package
Derate linearly above 25
°
C, free air temperature at 0.7 mA/
°
C
Input Power Dissipation ................................................................. 35 mW
Derate linearly above 50%, free air temperature at 0.7 mW/
°
C
Output Power Dissipation ............................................................ 100 mW
Derate linearly above 25
°
C, free air temperature at 0.2 mA/
°
C
Isolation Test Voltage ............................................................... 5300 V
RMS
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C .................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ...............................................................
≥
10
11
Ω
Storage Temperature ..................................................... –55
°
C to +125
°
C
Operating Temperature.................................................. –55
°
C to +100
°
C
Lead Soldering Temperature (t=10 s)............................................. 260
°
C
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
1
2
3
4
8
7
6
5
VCC
VB
V0
GND
NC
Anode
Cathode
NC
Dimensions in inches (mm)
6N138
6N139
Low Input Current, High Gain
Optocoupler
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA 6N138/139
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–67 March 13, 2000-11
Table 1. Electro-optical Characteristics
T
A
=0
°
C to 70
°
C,
T
A
=25°C (Typical, unless otherwise specified)
Table 2. Switching Specifications
T
A
=25
°
C
Notes
1. Derate linearly above 50
°
C free-air temperature at a rate of 0.4 mA/
°
C.
2. Derate linearly above 50
°
C free-air temperature at a rate of 0.7 mW/
°
C.
3. Derate linearly above 25
°
C free-air temperature at a rate of 0.7 mA/
°
C.
4. Derate linearly above 25
°
C free-air temperature at a rate of 2.0 mW/
°
C.
5. DC current transfer ratio is defined as the ratio of output collector current,
I
O
, to the forward LED input current,
I
F
times 100%.
6. Pin 7 open.
7. Device considered a two-terminal device: pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7, and 8 shorted together.
8. Using a resistor between pin 5 and 7 will decrease gain and delay time.
9. Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm/dt on the leading edge of the common mode
pulse, V
CM
, to assure that the output will remain in a logic high state (i.e.
V
O
>
2.0 V) common mode transient immunity in logic low level is the
maximum tolerable (negative) dVcm/dt on the trailing edge of the common mode pulse signal, V
CM
, to assure that the output will remain in a
logic low state (i.e.
V
O
<
0.8 V).
10.In applications where dv/dt may exceed 50,000 V/µs (such as state discharge) a series resistor,
R
CC
should be included to protect
I
C
from
destructively high surge currents. The recommended value is
Parameter Symbol Device Min. Typ. Max. Units Test Conditions Note
Current Transfer Ratio CTR 6N138 300 1600 —%
I
F
=1.6 mA,
V
O
=0.4 V,
V
CC
=4.5 V 5.6
—6N139 400
500
1600
2000
I
F
=0.5 mA,
V
O
=0.4 V,
V
CC
=4.5 V
I
F
=1.6 mA,
V
O
=0.4 V,
V
CC
=4.5 V
Logic Low,
Output Voltage
V
OL
6N138 —0.1 0.4 V
I
F
=1.6 mA,
I
O
=4.8 mA,
V
CC
=4.5 V 6
6N139 —0.1
0.15
0.25
0.4
I
F
=1.6 mA,
I
O
=8.0 mA,
V
CC
=4.5 V
I
F
=5.0 mA,
I
O
=15 mA,
V
CC
=4.5 V
I
F
=12 mA,
I
O
=24 mA,
V
CC
=4.5 V
Logic High,
Output Current
I
OH
6N138 —0.1 250
µ
A
I
F
=0 mA,
V
O
=
V
CC
=7.0 V
6N139 —0.05 100
I
F
=0 mA,
V
O
=
V
CC
=18 V
Logic Low Supply Current
I
CCL
——0.2 1.5 mA
I
F
=1.6 mA,
V
O
=OPEN,
V
CC
=18 V
Logic High Supply Current
I
CCH
——0.001 10
µ
A
IF=0 mA, VO=OPEN, VCC=18 V
Input Forward Voltage VF——1.4 1.7 V IF=1.6 mA, TA=25°C—
Input Reverse Breakdown
Voltage
BVR—5.0 —— IR=10 µA—
Temperature Coefficient of
Forward Voltage
———-1.8 —mV/°CIF=1.6 mA —
Input Capacitance CIN ——25 —pF f=1.0 MHz, VF=0 —
Input-Output Insulation
Leakage Current
I-0 —— 1.0 µA 45% Relative Humidity, TA=25°C
t=5.0 s, V1-0=3000 VDC
7
Resistance (Input-Output) RI-O ——1012 —ΩVIO=500 VDC
Capacitance (Input-Output) CI-O ——0.6 —pF f=1.0 MHz
Parameter Symbol Device Min. Typ. Max. Units Test Conditions Note
Propagation Delay Time,
To Logic Low at Output
tPHL 6N138 —2.0 10 µSIF=1.6 mA, RL=2.2 kΩ—
6N139 6.0
0.6
25
1.0
IF=0.5 mA, RL=4.7 kΩ
IF=12 mA, RL=270 Ω
6, 8
Propagation Delay Time,
To Logic High at Output
tPLH 6N138 —2.0 35 µSIF=1.6 mA, RL=2.2 kΩ—
6N139 4.0
1.5
60
7.0
IF=0.5 mA, RL=4.7 kΩ
IF=12 mA, RL=270 Ω6, 8
Common Mode Transient Immunity, Logic
High Level Output
CMH——500 —V/µSIF=0 mA, RL=2.2 kΩ
RCC=0/VCM/=10 VP–P
9,10
Common Mode Transient Immunity, Logic
Low Level Output
CML——–500 —IF=1.6 mA, RL=2.2 kΩ
RCC=0/VCM/=10 VP–P
9,10
RCC
IV
0.15 IFmA()
-------------------------------kΩ≅