IPG20N06S2L-65
OptiMOS® Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active1) IDTC=25 °C, VGS=10 V 20 A
TC=100 °C, VGS=10 V 14
Pulsed drain current1)
one channel active ID,pulse -80
Avalanche energy, single pulse1, 3) EAS ID=10A 40 mJ
Avalanche current, single pulse3) IAS -15 A
Gate source voltage VGS - ±20 V
Power dissipation
one channel active Ptot TC=25 °C 43 W
Operating and storage temperature Tj, Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 55 V
RDS
(
on
)
,max
3) 65 mΩ
ID20 A
Product Summary
Type Package Marking
IPG20N06S2L-65 PG-TDSON-8-4 2N06L65
PG-TDSON-8-4
Rev. 1.0 page 1 2009-09-07
IPG20N06S2L-65
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics1)
Thermal resistance, junction - case RthJC - - - 3.5 K/W
SMD version, device on PCB RthJA minimal footprint - 100 -
6 cm2 cooling area2) -60-
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 55 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=14 µA 1.2 1.6 2.0
Zero gate voltage drain current3) IDSS
VDS=55 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=55 V, VGS=0 V,
Tj=125 °C2) - 1 100
Gate-source leakage current3) IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance3) RDS(on) VGS=4.5 V, ID=7.5A -6779
mΩ
VGS=10 V, ID=15A -5365
Values
Rev. 1.0 page 2 2009-09-07
IPG20N06S2L-65
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics1)
Input capacitance3) Ciss - 315 410 pF
Output capacitance3) Coss - 90 120
Reverse transfer capacitance3) Crss -3550
Turn-on delay time td(on) -2-ns
Rise time tr-3-
Turn-off delay time td(off) -10-
Fall time tf-7-
Gate Char
g
e Characteristics1, 3)
Gate to source charge Qgs - 1.2 1.6 nC
Gate to drain charge Qgd - 3.5 5.3
Gate charge total Qg- 9.4 12
Gate plateau voltage Vplateau - 3.9 - V
Reverse Diode
Diode continous forward current1)
one channel active IS- - 20 A
Diode pulse current1)
one channel active IS,pulse --80
Diode forward voltage VSD
VGS=0 V, IF=15 A,
Tj=25 °C - 1.0 1.3 V
Reverse recovery time1) trr
VR=27.5 V, IF=IS,
diF/dt=100 A/µs -30-ns
Reverse recovery charge1, 3) Qrr -28-nC
3)
Per channel
1) Specified by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=27.5 V,
VGS=10 V, ID=20 A,
RG=11 Ω
VDD=44 V, ID=20 A,
VGS=0 to 10 V
Rev. 1.0 page 3 2009-09-07
IPG20N06S2L-65
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V; one channel active ID = f(TC); VGS ≥ 6 V; one channel active
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25°C; D=0; one channel active ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1 10 100
VDS [V]
ID [A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
tp [s]
ZthJC [K/W]
0
5
10
15
20
25
30
35
40
45
0 50 100 150 200
TC [°C]
Ptot [W]
0
5
10
15
20
25
0 50 100 150 200
TC [°C]
ID [A]
Rev. 1.0 page 4 2009-09-07
IPG20N06S2L-65
5 Typ. output characteristics3) 6 Typ. drain-source on-state resistance3)
ID = f(VDS); Tj = 25 °C RDS(on) = f(ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics3) 8 Typ. drain-source on-state resistance3)
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 15 A; VGS = 10 V
parameter: Tj
20
40
60
80
100
120
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
20
40
60
80
012345
VDS [V]
ID [A]
5.5 V
3.5 V 4 V 4.5 V 5 V
10 V
40
60
80
100
120
140
160
0 20406080
ID [A]
RDS(on) [mΩ]
-55 °C
25 °C
175 °C
0
20
40
60
80
1234567
VGS [V]
ID [A]
Rev. 1.0 page 5 2009-09-07
IPG20N06S2L-65
9 Typ. gate threshold voltage 10 Typ. Capacitances3)
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristicis3) 12 Avalanche characteristics3)
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
100 °C
150 °C
0.1
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
14µA
140µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
101
102
103
0 5 10 15 20 25 30
VDS [V]
C [pF]
Rev. 1.0 page 6 2009-09-07
IPG20N06S2L-65
13 Avalanche energy3) 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
parameter: ID
15 Typ. gate charge3) 16 Gate charge waveforms
VGS = f(Qgate); ID = 20 A pulsed
parameter: VDD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
50
53
56
59
62
65
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
11 V 44 V
0
2
4
6
8
10
12
0246810
Qgate [nC]
VGS [V]
15 A
10 A
5 A
0
20
40
60
80
100
25 50 75 100 125 150 175
Tj [°C]
EAS [mJ]
Rev. 1.0 page 7 2009-09-07
IPG20N06S2L-65
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2009
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2009-09-07
IPG20N06S2L-65
Revision History
Version
Revision 1.0
Changes
Final Data Sheet
Date
07.09.2009
Rev. 1.0 page 9 2009-09-07
