[RANSYS MMBTA13 / MMBTA14 ELECTRONICS LIMITED NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features Epitaxial Planar Die Construction SOT-23 Complementary PNP Types Available (MMBTA63 / MMBTA64) | Joa Dim | Min | Max Ideal for Medium Power Amplification and fe] A | 087 | 0.51 Switching B 1.19 | 1.40 High Current Gain TOP VIEW b C 2.10 | 2.50 - D 0.89 1.05 Mechanical Data [B| Lot Y E | o45 | 061 Case: SOT-23, Molded Plastic KS. go G_| 1.78 | 2.05 Terminals: Solderable per MIL-STD-202, Wo H 2.65 | 9.05 Method 208 J 0.013 | 0.15 Terminal Connections: See Diagram ail Ut | oo | 4.10 MMBTA13 Marking: K2D, R1M J , * I. Toas | et MMBTA14 Marking: K3D, R1N M 0.076 | 0.178 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings @ Ta= 25 C unless otherwise specified Characteristic Symbol MMBTA13 MMBTA14 Unit Collector-Base Voltage VcBo 30 Vv Collector-Emitter Voltage VcEO 30 Vv Emitter-Base Voltage VEBO 10 Vv Collector Current - Continuous (Note 1) le 300 mA Power Dissipation (Note 1) Pg 350 mW Thermal Resistance, Junction to Ambient (Note 1) R JA 357 K/AW Operating and Storage and Temperature Range Tj, Tsta -55 to +150 Cc Electrical Characteristics @ Ta = 25 C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Emitter Breakdown Voltage V(BR)CEO 30 Vv Ic = 100 AVpe=0V Collector Cutoff Current IcBo 100 nA Vos = 30V, le= 0 Emitter Cutoff Current lEBO 100 nA Vep= 10V, Ic = 0 ON CHARACTERISTICS (Note 2) DC Current Gain MMBTA13 5,000 Ilo = 10mA, Vce = 5.0V MMBTA14 hee 10,000 Io= 10mA, VcE= 5.0V MMBTA13 10,000 I = 100MA, Voce = 5.0V MMBTA14 20,000 I = 100mA, Voce = 5.0V Collector-Emitter Saturation Voltage VcE(saT) 1.5 Vv Ic = 100mA, Ip = 100 A Base- Emitter Saturation Voltage VBE(SAT) 2.0 V I = 100m