TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 TELECOMMUNICATION SYSTEM 50 A 10/1000 OVERVOLTAGE PROTECTORS 4 kV 10/700, 100 A 5/310 ITU-T K.20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4395 `4400 VDRM V(BO) V 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 320 300 V 70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 395 400 SMBJ PACKAGE (TOP VIEW) R(B) 1 2 T(A) MDXXBG device symbol T SD4XAA R Terminals T and R correspond to the alternative line designators of A and B Rated for International Surge Wave Shapes WAVE SHAPE STANDARD 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K.20/21 FCC Part 68 GR-1089-CORE ITSP A 300 220 120 100 75 50 Low Differential Capacitance . . . 43 pF max. .................UL Recognized Component. HOW TO ORDER DEVICE PACKAGE TISP4xxxM3BJ BJ (J-Bend DO-214AA/SMB) CARRIER ORDER AS Embossed Tape Reeled TISP4xxxM3BJR Bulk Pack TISP4xxxM3BJ Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etcetera. description These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessary include testing of all parameters. Copyright (c) 2000 Texas Instruments Incorporated Designed and manufactured by Power Innovations, A Bourns Company, under private label for Texas Instruments. 1 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. The TISP4xxxM3BJ range consists of eighteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series is available. absolute maximum ratings, TA = 25 C (unless otherwise noted) RATING Repetitive peak off-state voltage, (see Note 1) SYMBOL `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4395 `4400 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) NOTES: 1. 2. 3. 4. 2 See Applications Information and Figure 10 for voltage values at lower temperatures. Initially the TISP4xxxM3BJ must be in thermal equilibrium with TJ = 25 C. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions. See Applications Information and Figure 11 for current ratings at other temperatures. VDRM ITSP VALUE 58 65 75 90 100 120 135 145 155 160 180 190 200 220 230 275 320 300 300 220 120 110 100 100 100 75 50 UNIT V A TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 absolute maximum ratings, TA = 25 C (unless otherwise noted) (Continued) RATING Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A Junction temperature Storage temperature range SYMBOL ITSM diT/dt TJ Tstg VALUE 30 32 2.1 300 -40 to +150 -65 to +150 UNIT A A/s C C NOTES: 2. Initially the TISP4xxxM3BJ must be in thermal equilibrium with TJ = 25 C. 3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C electrical characteristics, TA = 25 C (unless otherwise noted) IDRM V(BO) PARAMETER Repetitive peak offstate current Breakover voltage TEST CONDITIONS VD = VDRM dv/dt = 750 V/ms, RSOURCE = 300 MIN TA = 25 C TA = 85 C `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4395 `4400 TYP MAX 5 10 70 80 95 115 125 145 165 180 200 220 240 250 265 290 300 350 395 400 UNIT A V 3 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 electrical characteristics, TA = 25 C (unless otherwise noted) (Continued) PARAMETER V(BO) I(BO) VT IH dv/dt ID Impulse breakover voltage Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current TEST CONDITIONS dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A dv/dt = 750 V/ms, RSOURCE = 300 IT = 5 A, tW = 100 s IT = 5 A, di/dt = +/-30 mA/ms VD = 50 V f = 100 kHz, Vd = 1 V rms, VD = 0, Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V f = 100 kHz, Vd = 1 V rms, VD = -50 V f = 100 kHz, Vd = 1 V rms, VD = -100 V (see Note 6) NOTE TYP 0.15 0.15 Linear voltage ramp, Maximum ramp value < 0.85VDRM f = 100 kHz, Vd = 1 V rms, VD = -1 V Coff MIN `4070 `4080 `4095 `4115 `4125 `4145 `4165 `4180 `4200 `4220 `4240 `4250 `4265 `4290 `4300 `4350 `4395 `4400 MAX 78 88 102 122 132 151 171 186 207 227 247 257 272 298 308 359 405 410 0.6 3 0.6 5 TA = 85 C 4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4070 thru `4115 `4125 thru `4220 `4240 thru `4400 `4125 thru `4220 `4240 thru `4400 UNIT V A V A kV/s 10 110 80 70 96 74 64 90 70 60 47 36 30 30 24 A 86 60 54 80 56 50 74 52 46 36 26 20 20 16 TYP MAX UNIT pF 6: To avoid possible voltage clipping, the `4125 is tested with VD = -98 V. thermal characteristics PARAMETER RJA NOTE 4 Junction to free air thermal resistance TEST CONDITIONS MIN EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C 115 C/W 52 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 PARAMETER MEASUREMENT INFORMATION +i Quadrant I ITSP Switching Characteristic ITSM IT V(BO) VT I(BO) IH VDRM -v IDRM ID VD ID IDRM VD VDRM +v IH I(BO) V(BO) VT IT ITSM Quadrant III Switching Characteristic ITSP -i PMXXAAB Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL 5 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 TYPICAL CHARACTERISTICS OFF-STATE CURRENT vs JUNCTION TEMPERATURE TCMAG 100 1.10 NORMALISED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4MAF Normalised Breakover Voltage VD = 50 V |ID| - Off-State Current - A 10 1 0*1 0*01 1.05 1.00 0.95 0*001 -25 0 25 50 75 100 TJ - Junction Temperature - C 125 -25 150 Figure 2. 50 40 30 TA = 25 C tW = 100 s 10 5 4 3 2 1.5 1 0.7 '4125 THRU '4200 '4240 THRU '4400 1 1.5 2 3 4 5 VT - On-State Voltage - V 1.0 0.9 0.8 0.7 0.6 0.5 '4070 THRU '4115 Figure 4. 6 NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4MAD 1.5 20 15 7 2.0 TC4MACA Normalised Holding Current IT - On-State Current - A 70 150 Figure 3. ON-STATE CURRENT vs ON-STATE VOLTAGE 100 0 25 50 75 100 125 TJ - Junction Temperature - C 0.4 7 10 -25 0 25 50 75 100 125 TJ - Junction Temperature - C Figure 5. 150 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 TYPICAL CHARACTERISTICS DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE TC4MABA Capacitance Normalised to VD = 0 0.7 0.6 0.5 '4070 THRU '4115 0.4 '4125 THRU '4200 0.3 '4240 THRU '4400 0.2 0.5 '4145 '4165 '4180 '4200 '4220 '4240 '4250 '4265 '4290 '4300 '4350 '4395 '4400 '4125 '4115 TJ = 25C Vd = 1 Vrms 0.8 '4095 0.9 TC4MAEA 50 C - Differential Off-State Capacitance - pF 1 '4070 '4080 NORMALISED CAPACITANCE vs OFF-STATE VOLTAGE 45 40 C = Coff(-2 V) - Coff(-50 V) 35 30 25 1 2 3 5 10 20 30 VD - Off-state Voltage - V Figure 6. 50 100150 50 60 70 80 90100 150 200 250 300 VDRM - Repetitive Peak Off-State Voltage - V Figure 7. 7 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 RATING AND THERMAL INFORMATION THERMAL IMPEDANCE vs POWER DURATION TI4MAC 30 VGEN = 600 Vrms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C 20 15 10 9 8 7 6 5 4 3 2 1.5 0*1 1 10 100 TI4MAE 150 ZJA(t) - Transient Thermal Impedance - C/W ITSM(t) - Non-Repetitive Peak On-State Current - A NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION 1000 100 90 80 70 60 50 40 30 20 15 10 9 8 7 6 5 4 0*1 ITSM(t) APPLIED FOR TIME t EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C 1 10 100 1000 t - Power Duration - s t - Current Duration - s Figure 8. Figure 9. VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE IMPULSE RATING vs AMBIENT TEMPERATURE TI4MADA 1.00 400 TC4MAA BELLCORE 2/10 300 0.99 250 '4125 THRU '4200 Impulse Current - A Derating Factor 0.98 0.97 0.96 0.95 '4070 THRU '4115 200 IEC 1.2/50, 8/20 150 FCC 10/160 120 100 90 80 70 ITU-T 10/700 FCC 10/560 60 0.94 50 '4240 THRU '4400 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - C Figure 10. 8 40 -40 -30 -20 -10 0 BELLCORE 10/1000 10 20 30 40 50 60 70 80 TA - Ambient Temperature - C Figure 11. TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 APPLICATIONS INFORMATION deployment These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors (Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13). Th3 Th1 Th1 Th2 Figure 12. TWO POINT PROTECTION Figure 13. MULTI-POINT PROTECTION In Figure 12, protector Th1 limits the maximum voltage between the two conductors to V(BO). This configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th1 is not required. impulse testing To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values. SERIES TISP4xxxM3 CURRENT PEAK CURRENT VOLTAGE PEAK VOLTAGE WAVE FORM 25 C RATING RESISTANCE VALUE WAVE FORM SETTING A s A s V 2500 2/10 500 2/10 300 GR-1089-CORE 11 1000 10/1000 100 10/1000 50 1500 10/160 200 10/160 120 2x5.6 800 10/560 100 10/560 75 3 FCC Part 68 1500 9/720 37.5 5/320 100 0 (March 1998) 1000 9/720 25 5/320 100 0 I3124 1500 0.5/700 37.5 0.2/310 100 0 37.5 1500 5/310 100 0 10/700 ITU-T K.20/K.21 100 4000 FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator STANDARD If the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. For the FCC Part 68 10/560 waveform the following values result. The minimum total circuit impedance is 800/75 = 10.7 and the generators fictive impedance is 800/100 = 8 . This gives a minimum series resistance value of 10.7 - 8 = 2.7 . After allowing for tolerance, a 3 10% resistor would be suitable. The 10/160 waveform needs a standard resistor value of 5.6 per conductor. These would be R1a and R1b in 9 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 Figure 15 and Figure 16. FCC Part 68 allows the equipment to be non-operational after the 10/160 (conductor to ground) and 10/560 (inter-conductor) impulses. The series resistor value may be reduced to zero to pass FCC Part 68 in a non-operational mode e.g. Figure 14. In some cases the equipment will require verification over a temperature range. By using the rated waveform values from Figure 11, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C. a.c. power testing The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure). capacitance The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. normal system voltage levels The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP4265M3BJ, with a VDRM of 200 V, can be used for the protection of ring generators producing 100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature when the VDRM has reduced to 190/200 = 0.95 of its 25 C value. Figure 10 shows that this condition will occur at an ambient temperature of -28 C. In this example, the TISP4265M3BJ will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -28 C. JESD51 thermal measurement method To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values. 10 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 typical circuits MODEM TIP WIRE RING FUSE RING DETECTOR R1a Th3 HOOK SWITCH TISP4350 PROTECTED EQUIPMENT Th1 D.C. SINK Th2 SIGNAL TIP AI6XBMA RING WIRE Figure 14. MODEM INTER-WIRE PROTECTION E.G. LINE CARD R1b AI6XBK Figure 15. PROTECTION MODULE R1a Th3 SIGNAL Th1 Th2 R1b AI6XBL D.C. Figure 16. ISDN PROTECTION TIP WIRE OVERCURRENT PROTECTION RING/TEST PROTECTION TEST RELAY RING RELAY SLIC RELAY S3a R1a Th3 S1a SLIC PROTECTION Th4 S2a SLIC Th1 Th2 RING WIRE Th5 R1b S3b S1b S2b TISP6xxxx, TISPPBLx, 1/2TISP6NTP2 C1 220 nF TEST EQUIPMENT RING GENERATOR VBAT AI6XBJ Figure 17. LINE CARD RING/TEST PROTECTION 11 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 MECHANICAL DATA SMBJ (DO-214AA) plastic surface mount diode package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB 4,57 4,06 3,94 3,30 2 Index Mark (if needed) 2,40 2,00 1,52 0,76 2,10 1,90 0,20 0,10 2,32 1,96 5,59 5,21 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXBHA 12 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 MECHANICAL DATA recommended printed wiring footprint. SMB Pad Size 2.54 2.40 2.16 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXBI device symbolization code Devices will be coded as below As the device parameters are symmetrical, terminal 1 is not identified. DEVICE TISP4070M3BJ TISP4080M3BJ TISP4095M3BJ TISP4115M3BJ TISP4125M3BJ TISP4145M3BJ TISP4165M3BJ TISP4180M3BJ TISP4200M3BJ TISP4220M3BJ TISP4240M3BJ TISP4250M3BJ TISP4265M3BJ TISP4290M3BJ TISP4300M3BJ TISP4350M3BJ TISP4395M3BJ TISP4400M3BJ SYMBOLIZATION CODE 4070M3 4080M3 4095M3 4115M3 4125M3 4145M3 4165M3 4180M3 4200M3 4220M3 4240M3 4250M3 4265M3 4290M3 4300M3 4350M3 4395M3 4400M3 carrier information Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. CARRIER Embossed Tape Reel Pack Bulk Pack ORDER # TISP4xxxM3BJR TISP4xxxM3BJ 13 TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 MECHANICAL DATA tape dimensions SMB Package Single-Sprocket Tape 4,10 3,90 1,65 1,55 2,05 1,95 1,85 1,65 0,40 MAX. 5,55 5,45 8,10 7,90 Direction of Feed o 1,5 MIN. 0 MIN. Carrier Tape 8,20 MAX. Cover Tape 4,5 MAX. Embossment 20 Index Mark (if needed) 12,30 11,70 Maximium component rotation Typical component cavity centre line Typical component centre line ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 3,0 mm Reel hub diameter 75 mm MIN. Reel axial hole: 13,0 0,5 mm C. 3000 devices are on a reel. 14 MDXXBJ TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS NOVEMBER 1997 - REVISED OCTOBER 2000 IMPORTANT NOTICE Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ("Critical Applications"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI products in such applications requires the written approval of an appropriate TI officer. Questions concerning potential risk applications should be directed to TI through a local SC sales office. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor does TI warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. Copyright (c) 2000, Texas Instruments Incorporated 15