von BZX84C2V7S - BZX84C39S DUAL 200mW SURFACE MOUNT ZENER DIODE LIT Efex! POWER SEMICONDUCTOR Features e Planar Die Construction e 200mW Power Dissipation SOT-363 e Zener Voltages from 2.7V - 39V Ale Dim | Min | Max e = Ultra-Small Surface Mount Package [A] hd A 0.10 | 0.30 B 1.15 | 1.35 KXX BC Cc 2.00 | 2.20 Mechanical Data WHA D | 0.65 Nominal A} [oe * Case: SOT-363, Molded Plastic ' F | 030 | 0.40 e Terminals: Solderable per MIL-STD-202, + H 1.80 2.20 Method 208 k J 0.10 e Polarity: See Diagram t+ V K 0.90 | 1.00 e Marking: Marking Code (See Table on Page 2) * la] F L 0.25 | 0.40 e Weight: 0.006 grams (approx.) 4 DF L M 010 | 0.25 All Dimensions in mm Maximum Ratings @ Ta = 25C unless otherwise specified Characteristic Symbol Value Unit Zener Current (See Table on page 2) Forward Voltage @ Ir =10mA Ve 0.9 Vv Power Dissipation (Note 1) Pg 200 mW Thermal Resistance, Junction to Ambient Air (Note 1) Resa 625 KAW Operating and Storage Temperature Range Tj, Tste -65 to +150 C Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Vz measured @ Iz; using a pulse test. Iz7 pulse width = 300us, period = 5ms. DS30108 Rev. 4P-1 1 of 3 BZX84C2V75 - BZX84C39S Electrical Characteristics @ Ta = 25C unless otherwise specified Zener Voltage Maximum Zener Maximum Maximum Temperature Range (Note 2) Impedance Reverse Current Current Coefficient of Type Marking Zener Voltage Number Code Izt = 5.0MA Zr @ 22k @ lex IR Va | Ta= 25C hii ZT = 0.25mA (Note 1) Nom (V) | Min (V) | Max (V) (Q) uA Vv Iz (mA) Min Max BZX84C2V7S KZC 2.7 2.5 2.9 100 1900 75 1.0 74 9 -4 BZX84C3V0S KZD 3.0 2.8 3.2 95 2000 50 1.0 67 9 -3 BZX84C3V3S KZE 3.3 3.1 3.5 95 2200 25 1.0 61 8 -3 BZX84C3V6S KZF 3.6 3.4 3.8 95 2300 15 1.0 56 8 -3 BZX84C3V9S KZG 3.9 3.7 4.1 95 2400 10 1.0 51 7 -3 BZX84C4V3S KZH 4.3 4.0 4.6 95 2500 5 1.0 47 6 -1 BZX84C4V7S KZ1 4.7 4.4 5.0 78 2200 3 1.5 43 5 +2 BZX84C5V1S KzZ2 5.1 4.8 5.4 60 2050 2 2.0 39 -3 +4 BZX84C5V6S KZ3 5.6 5.2 6.0 40 1800 2 3.0 36 -2 +6 BZX84C6V2S Kz4 6.2 5.8 6.6 10 1300 1 4.0 32 -1 +7 BZX84C6V8S KZ5 6.8 6.4 7.2 8.0 750 1 5.2 29 +2 +7 BZX84C7V5S KZ6 7.5 7.0 7.9 7.0 600 0.5 6.0 27 +3 +7 BZX84C8V2S KZ7 8.2 77 8.7 7.0 600 0.5 6.5 24 +4 +7 BZX84C9V1S KZ8 9.1 8.5 9.6 10 600 0.1 7.0 22 +5 +8 BZX84C10S Kz9 10 9.4 10.6 15 600 0.1 7.5 20 +5 +8 BZX84C11S KY1 11 10.4 11.6 20 600 0.1 8.4 18 +5 +9 BZX84C12S KY2 12 11.4 12.7 22 600 0.1 9.0 17 +6 +9 BZX84C13S KY3 13 12.4 14.1 25 600 0.1 10 15 +7 +9 BZX84C15S KY4 15 13.8 15.6 32 600 0.1 11 13 +8 +9.5 BZX84C16S KY5 16 15.3 17.1 40 600 0.1 12 13 +8 +9.5 BZX84C18S KY6 18 16.8 19.1 50 600 0.1 14 11 +8 +10 BZX84C20S KY7 20 18.8 21.2 50 600 0.1 15 10 +8 +10 BZX84C22S KY8 22 20.8 23.3 55 600 0.1 17 9 +8 +10 BZX84C24S KY9 24 22.8 25.6 80 600 0.1 18 8 +8 +10 BZX84C27S KYA 27 25.1 28.9 80 600 0.1 20 7 +8 +10 BZX84C30S KYB 30 28 32 80 600 0.1 22.5 7 +8 +10 BZX84C33S KYC 33 31 35 88 700 0.1 25 6 +8 +10 BZX84C36S KYD 36 34 38 95 700 0.1 27 6 +8 +10 BZX84C39S KYE 39 37 41 130 800 0.1 29 5 +10 +12 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2. Vz measured @ lz; using a pulse test. Izt pulse width = 300s, period = 5ms. DS30108 Rev. 4P-1 20f3 BZX84C2V75 - BZX84C39S 50 30 T,=25C | c10 C12 40 < = = ij 30 2 aw i a a 5 a 3 & 20 cr i 2 10 N Wt Test current Iz = 410 Test arent I, WN on C33 | C36 |C39 0 0 0 1 2 3 4 5 6 7 8 9g 10 0 10 20 30 40 Vz, ZENER VOLTAGE (V) Vz, ZENER VOLTAGE (V) Fig. 1. Zener Breakdown Characteristics Fig. 2. Zener Breakdown Characteristics 500 1000 T= 25C SeeNote1 | c 2s 400 Ww Oo = & E 9 = 300 & = f S 100 2 z 2B S A FE > 200 NN 9 2 MN 2 a INQ > 3 NY, a 100 Ny 10 0 MN 1 10 100 0 100 200 Vz, NOMINAL ZENER VOLTAGE (V) Ambient Temperature, C Fig. 4. Junction Capacitance vs Nominal Zener Voltage Fig. 3. Power Derating Curve DS30108 Rev. 4P-1 3 0f3 BZX84C2V75 - BZX84C39S