MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz Low Capacitance. For Applications to 26.5 GHz Silicon Dioxide / Silicon Nitride Passivation * Monolithic Glass Support Design Ultra-Low through High - Barrier Heights Monolithic Design Insures Matched Junctions Wafer Level SPC DESCRIPTION New Schottky Barrier devices are currently available in single beamlead, dual T, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-her- metic packages. Monolithic devices are recommended for highest frequency, broadband designs. The beam- lead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metalization schemes produce Nardas complete line of barrier heights. Diodes are currently available with barrier heights as low as 240 mV and up to 625 mV per junction. By optimizing epitaxy and metali- zation, these devices achieve the lowest Rs-Cj products resulting in exceptional conversion loss performance. High Rel screening is available on packaged devices per your requirements. nard microwave-east an { B) communications company RING QUAD BRIDGE QUAD TR BEAMLEAD SERIES "T APPLICATIONS Schottky Barrier diodes are suitable for a variety of circuit applications ranging from single ended RF mixers to low level high speed switching. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring repeatable performance through Ku band. Sin- gle junction devices such as the style S12 are well suited for RF Mixers, level detectors, phase detectors, modulators, etc. With junction capacitances as low as .06 pF, Monolithic Quads are ideally suited for broad band double balanced mixer designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series) are de- signed for mixers with low or starved Local Oscillator levels where optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are designed for appli- cations where high drive levels are available, such as, Doppler mixers or motion detection. Schottky diodes are available in Ultra-Low, Medium and High Drive levels to fit virtually any circuit requirement. SEMICONDUCTOR OPERATION 75 Technology Drive + Lowell, MA 01851 Tel: 508-442-5600 * Fax: 508-937-3748 151 MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz TABLE 1: ELECTRICAL SPECIFICATIONS AT Ta=25C } FREQ. | Vp min | Cj? max | Ve max | Rat max | Nfssp? | ZO typ | P/N BARRIER | RANGE (v) (pF) (mv) (o). | TYP(aB) fg) GC9901 Ku-Ka 0.09 310 18.0 6.50 GC9902 x 0.15 280 14.0 6.00 Gc9g03 | ULTRA-LOW C 2.0 0.30 270 12.0 5.50 140 GC9904 S 0.50 250 10.0 5.50 GC9911 Ku-Ka 0.09 360 18.0 6.50 GC9912 x 0.15 350 14.0 6.00 GC9913 Low c 20 0.30 340 12.0 5.50 170 GC9914 Ss | _0.50 330 10.0 5.50 GC9921 | | Ku-Ka 0.09 440 18.0 6.50 GC9922 4 0.15 430 14.0 6.00 Gc9923 | LOW-MED C 2.0 0.30 410 12.0 5.50 200 __GC9924 Ss 0.50 390 10.0 5.50 | GC9931 Ku-Ka 0.09 540 18.0 6.75 GC9932 x 0.15 530 14.0 6.25 Gc9933 | MEDIUM C 3.0 0.30 520 12.0 5.75 250 _GC9934 Ss 0.50 500 10.0 5.50 GC9941 Ku-Ka 0.09 650 20.0 7.00 GC9942 x 0.15 630 16.0 6.25 GC9943 HIGH C 4.0 0.30 620 12.0 5.75 300 GC9944 S 0.50 600 10.0 5.75 CONDITIONS MAXIMUM RATING 1. Vp measured at 10A (N/A on ring quads). Toper: -65 to 150C 2. 0 Volts, F=1 MHz (diagonal leads on quads). Tstg: -65 to 170C 3. f= 1.0mA Power Handling: 100 mW 4. =5.0mA (Derate Linearly to zero at 150C) 5. L.O. = 0 dBm, Ni = 1.5 dB, F = 10 GHz NOTE 6. L.0. = 0dBm When ordering, specify appropriate package style. Specifications subject to change without notice. TYPICAL PERFORMANCE CURVES TYPICAL Vf CURVES - GC9902 - GCg922 - GO9932 - GC9942 Ie (mA) hon om] 0.01 0 o2 04 06 O08 1 1.2 Vf (volts) TYPICAL NF vs L.O. POWER A-GC9902 B - GCg922 c - GC9932 D - GCg942 1.0 L.O, POWER (mw) Zit (Ohms) TYPICAL Zj vs L.O. POWER 10 8 6 -4 20 2 4 6 L.O. POWER (dBm) 8 10 SEMICONDUCTOR OPERATION 75 Technology Drive Lowell, MA 01851 * Tel: 508-442-5600 * Fax: 508-937-3748 152 narda microwave-east an { B) communications company MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz SCHEMATIC SCHEMATIC SCHEMATIC 930 KT 1 on +782) : fe ml Se er 0075) + + 005 - + + 0002 py, 0015 typ 0002 0016 typ ,00025 typ ~ ve (005) 7 (0375) (-b05) VP (0375) Th i SD Sal + STYLE $12 STYLE TSR STYLE TCC SCHEMATIC SCHEMATIC 005 SCHEMATIC val : [+ ctss)* ples >| [ritess* meth on yx ot x & (275) Di (275) m7 + t t 005 0185 0185 7% (463) vt 2 typ 0015 (005) typ 0002 0015 2 .0015 (0375) YY (005) YP (oaray? (005) YP caargn pF > L + STYLE TCA STYLE QRi STYLE QB1 & eee 180 od - 017 go F t Epoxy Encapsulation Epoxy Encapsulation Epoxy Encapsulation C 035 ti 035 C 035 Ly ons 012 a 005 vy oon 12 10905 ty 08 012 FF * FF Ls ~.6nH Cp ~ 0.13 bs ~.6nH Cp ~ 0.13 pF Ls~ .6nH Cp ~ 0.13 pF STYLE 127A STYLE 1278 STYLE 127C 090 - 110 090 - .110 080 -.110 in Diameter gore + 022 Diameter ys + 022 Diameter yor - 022 F F F Epoxy Encapsulation Epoxy Encapsulation Epoxy Encapsulation .003 - .005 t .003 - 005 i 003 - 005 t a .035 max poe .035 max ts .035 max + nn + Fe + ks ~.6nH Cp ~ 0.17 pF Ls~.6nH Cp ~ 0.17 pF Ls ~.6 nH Cp ~ 0.17 pF STYLE 128A STYLE 128B STYLE 128 Dimensinsion in inches (mm). Tolerance: +.001 inches unless otherwise noted. Specifications subject to change without notice. narda SEMICONDUCTOR OPERATION microwave-east 75 Technology Drive * Lowell, MA 01851 * Tel: 508-442-5600 Fax: 508-937-3748 on (B) communications company 153 MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz .094 - 102 sq 094 - 102 sq 094 - 102 sq 0 -150 min .150 min 150 min (| 018-022 O18 - 022 018 - .022 + aL + IAATc sc] a as a] CY sr FF F F 003 i 006 .050 max 003 t -006 050 max 008 -006 .050 max Ls~22nH Cp~.17 pF Ls~22nH Cp~.17 pF Ls~22nH Cp ~.17 pF STYLE 129A STYLE 129B STYLE 129 PACKAGE SCHEMATIC PACKAGE SCHEMATIC PACKAGE T Oe 127A common 1278 BRIDGE 1276 CATHODE _ | QUAD Tec SCHEMATIC . aa @- 128A couton / 9 - a 1288 128 $12 TCA RING quaD i- 129A a 1298 129 sens 4 art T TsA EXAMPLE: - ORDER P/N GC9933-S12 FOR 'BEAMLEAD EXAMPLE: EXAMPLE: - ORDER P/N GC9933-S12-129B FOR A HERMETIC PACKAGED SCHOTTKY BARRIER DIODE ORDER P/N GC9901-TSR-128B FOR A SERIES 'T IN A 128B EPOXY PACKAGE ORDER P/N GC9922-QR1-129C FOR A RING QUAD IN A 129C HERMETIC PACKAGE. Dimensions in inches. Specifications subject to change without notice. Other package styles and configurations available. Consult Factory. narda microwave-east SEMICONDUCTOR OPERATION 75 Technology Drive * Lowell, MA 01851 Tel: 508-442-5600 * Fax: 508-937-3748