DATA SH EET
Product specification September 1995
DISCRETE SEMICONDUCTORS
BFR106
NPN 5 GHz wideband transistor
September 1995 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN DESCRIPTION
Code: R7p
1 base
2emitter
3 collector
Fig.1 SOT23.
lfpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Sys t em (IEC 134).
Note
1. Tsis the temperature at the sold ering point of the collector tab .
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
ICDC collector current 100 mA
Ptot total power dissipation up to Ts=70 C; note 1 500 mW
hFE DC current gain IC=50 mA; V
CE =9 V; T
amb =25 C25 80
fTtransition frequenc y IC=50 mA; V
CE = 9 V; f = 500 MHz;
Tamb =25 C5GHz
GUM maximum unilateral power gain IC=30 mA; V
CE = 6 V; f = 800 MHz;
Tamb =25 C11.5 dB
Vooutput voltage IC=50 mA; V
CE =9 V; R
L=75 ;
Tamb =25 C; dim =60 dB;
f(pqr) = 793.25 MHz
350 mV
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base v oltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-bas e v oltage open collector 3V
ICDC collector current 100 mA
Ptot total power dissipation up to Ts=70 C; note 1 500 mW
Tstg storage temperature 65 150 C
Tjjunction temperature 175 C
September 1995 3
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
THERMAL RESIST ANCE
Note
1. Tsis the temperature at the sold ering point of the collector tab .
CHARACTERISTICS
Tj=25 C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. IC=30 mA; V
CE =6 V; R
L=75 ; Tamb =25 C;
f(pq) =810 MHz; V
o=100 mV.
3. dim =60 dB (DIN 45004B); IC=50 mA; V
CE =9 V; R
L=75 ; Tamb =25 C; f(pqr) = 793.25 MHz .
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point up to Ts=70 C; note 1 210 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collecto r cut-off current IE=0; V
CB =10 V 100 nA
hFE DC current ga in IC=50 mA; V
CE =9 V 25 80
fTtransition fr eq uency IC=50 mA; V
CE = 9 V; f = 50 0 MHz;
Tamb =25 C5GHz
Cccollector capacitance IE=i
e= 0; VCB =10 V; f=1 MHz 1.5 pF
Ceemitter capacitance IC=i
c= 0; VEB =0.5 V; f=1 MHz 4.5 pF
Cre feedback capacitance IC=0; V
CE = 10 V; f = 1 MHz 1.2 pF
GUM maximum unilater al po we r gain
(note 1) IC=30 mA; V
CE = 6 V; f = 80 0 MHz;
Tamb =25 C11.5 dB
F noise figure IC=30 mA; V
CE = 6 V; f = 80 0 MHz;
Tamb =25 C3.5 dB
d2second order intermodulation
distortion note 2 50 dB
Vooutput voltage note 3 350 mV
GUM 10 log S21 2
1S
11 2
–1S
22 2
–
---------------------------------------------------------- dB.=
September 1995 4
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
Fig.2 Power derating curve.
1/2 page (Datasheet) 22 mm
s
0 50 100 200
200
0
MEA398 - 1
150T ( C)
o
Ptot
(mW)
400
600
Fig.3 DC current gain as a fu nc tion of collector
current.
VCE =9 V; T
amb =25 C.
handbook, halfpage
0
120
80
40
040 120
MBB774
80 I (mA)
C
hFE
Fig.4 Transition frequency as a function of
collector current.
VCE = 9 V; f = 500 MHz; Tj=25 C.
handbook, halfpage
04080
8
6
2
0
4
MBB773
120
I (mA)
C
(GHz)
T
f
Fig.5 Maximum unilateral power gain as a
function of frequency.
IC= 30 mA; VCE =6 V; T
amb =25 C.
handbook, halfpage
40
0
20
30
10
MEA399
10
2
10
3
10
4
10
f (MHz)
GUM
(dB)
September 1995 5
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
handbook, full pagewidth
MEA400
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
800
100 40 MHz
∞
10.2 10520.5
2000 MHz
1500
1200
1000
500
200
Fig.6 Common emitter input reflection coefficient (S11).
IC=30 mA; V
CE =6 V; T
amb =25 C.
Zo= 50 .
handbook, full pagewidth
MEA403
180°
+ ϕ
− ϕ
0°
30°
60°
90°
120°
150°
150°
120°
90°
60°
30°
40 MHz 100
40 2050 30 10 2000 MHz
500
800
1000
1200
1500
200
Fig.7 Common emitter forward transmission coefficient (S21).
IC=30 mA; V
CE =6 V; T
amb =25 C.
September 1995 6
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
handbook, full pagewidth
MEA402
180°
+ ϕ
− ϕ
0°
30°
60°
90°
120°
150°
150°
120°
90°
60°
30°
100
0.4 0.20.5 0.3 0.1
2000 MHz
40 MHz
1500
1200
1000
800 500
200
Fig.8 Common emitter reverse transmission coefficient (S12).
IC=30 mA; V
CE =6 V; T
amb =25 C.
handbook, full pagewidth
MEA401
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
– j
∞
10.2 10520.5
800 MHz
500
200
100 40 MHz
Fig.9 Common emitter output reflection coefficient (S22).
IC=30 mA; V
CE =6 V; T
amb =25 C.
Zo= 50 .
September 1995 7
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
September 1995 8
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
DATA SHEET STATUS
Notes
1. Please consult the most recently issued documen t b efore initiating or completing a design.
2. The product status of device (s) described in this document may have changed since this document was publishe d
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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Notwithstanding any damages that customer might incur
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Right to make changes NXP Semiconductors
reserves the right to make changes to information
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Applications Applications that are described herein for
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NXP Semiconductors makes no representation or
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Customers are responsible for the design and operation of
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associated with their ap plications and produ cts.
September 1995 9
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFR106
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as su ch is
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands R77/02/pp10 Date of release: Sept ember 1995
