Ordering number:EN 1413C | 1496. 2SA1371/25C3468 i> ANYO PNP/ NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display, Video Output Applications Use - Color TV chroma output and high breakdown voltage driver Features - High breakdown voltage: VcrozZ300V - Small reverse:transfer capacitance and excellent high frequency characteristic Cre=1.8pF (NPN), 2.3pF (PNP) * Adoption of MBIT process ( ): 2SA1371 Absolute Maximum Ratings at Ta=25c unit Collector-to-Base Voltage VCBO (-) 300 Vv Collector-to-Emitter Voltage VCEO (-} 306 Vv Emitter-to-Base Voltage VEBO (-)5 Vv Collector Current Ic (-) 100 mA Collector Current(Pulse) Icp (-) 200 mA, Collector Dissipation PC 1.0 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Electrical Characteristics at Ta=25C min typ max unit Collector Cutoff Current ICBO Vcp= (-) 200V, IE=0 (-)O.1 pA Emitter Cutoff Current IEBO VEB=(-) 4V,1c=0 (-}0.1 BA DC Current Gain nFE VcE=(-) 10V,Ic={-} 10m 40* 320* Gain-Bandwidth Preduct 7. VcE=(-) 30V,Ic=(-)10mA 150 MHz C-E Saturation Voltage VCE(sat) Ic=(-)20mA,Ip=(-) 2mA (-)0.6 V B-E Saturation Voltage VBE (sat) Ic=(-)20mA,Ip=(-) 2mA (-)1.0 Vv C-B Breakdown Voltage V(BR)CBO Ic=(-)10A,Ip=0 {-} 300 Vv C-E Breakdown Voltage Vi(BR)CEO Ic=(-)1mA,RaE=00 (+) 300 Vv E-B Breakdown Voltage V(BR)EBO Ip=(-)104A,Te=0 {-)5 v Output Capacitance cob VcB= (-) 30V,f=1MHz 2.6 pF ; (3-1) Reverse Transfer cre VcB= (-) 30V,f=1MHz 1.8 pF Capacitance (2.3) * : The 25A1371/25C3468 are classifed by 10mA hpp as follows: [aoc eo | 60 120 | 100 c 200 | 160 F 320 | Package Dimensions Cunittmm} 20064 3.0 o.5 f ie 05 | 85 14,0 . ELAJ: $-5] B: Base + SANYO: MP C: Collector E: Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 237K1/3135KI/1114K1, MT No.1413-1/4 25A1371/2S5C3468 -20 Bu I U- mH on 4 _ ow WW re 3 - oO wos a & =6 4 a4 20 DO _, 0 = -) -2 53 = ~6 7 -B -9 -#0 Collector: to-Emitter Voltage, VCE - V . Ic - 10 CE -9 S0 HA log 50K & ~ 7 A a 404 5 6 ue 304 = 6 a" 20 EA 6 o-3 u a2 104A a G1 =9 =10 -20 - =50 -60 -70 -80 -90 -100 Collector-to-Emitter Voltage,Vop - V hee - 1 10 F C 2A 137! Vap= 10V pc Current Gain, hre 8 10 1D 210 ~100 Collector Current,Ic - mA ft - I 8 Yon = 30 8 Gain-Bandwidth Product,fp - MHz 5 -10 fs -m Collector Current,Ic - mA Ic - Yee E 1 v's -_ wo e a bat WW > Q w 8 3 ob 6 u 14 S V2 0 2 #3 & 6 8 93 Collector-to-Emitter Voltage,VcE - V In - VCE i \ A q a Lo 40 B a Mt ha a u My Oo H uO a eo = Qo oO =0 nv nD DN Collector-to-Emitter Voltage,VCE - V HFE - I 00 SE6H Ving IOV ira) i ay e -A gy oO yo c a wy Mt og o oO a 10 Ko Collector Current,Ic - mA fT - I 8 Gain-Bandwidth Product,ff - MHz 5S 6 : wm Collector Current,Ic - m& No.1413-2/4 25A1371/2S03468 ~ VCB 2 2 ad - 9Oo'asurztoede9 andino 2 ad - qOo*aoueqtordes anding- 1D _ Collector-to-Base Voltage, VCB - V -1D Collector-to-Base Voltage,VCB - V cre - Qo ad - Bip anueqytoedeg aeysueizy, aS513A04 o ad - 879 aouejraedeg Zaysuez], ss1saay 0 0 Collestor-to=-Base Voltage,VCBR - 2 4100 10 : Collector-to-Base Voltage,VCB - VCE(sat - I > 19 g a Taq 4wg-03-107DaT TOD - (25)a5qabeqtoa uotze 2973 Tuy -04~107DaT [TO] 2 3 Collector Current,Ic - mA (188) adAabeqToA UoT_eANIES - 0 An Collector Current,Ic - mA AO anyes iD : Collector Current,Ic - mA - I 0 a 2 2 A - (38S) 3d,abeqto, votqeanyes 1a} }tuWg-oj-eseg - I 7 0 -00 Collector Current,Ic - mA VBE{sat a) 2 > Ww - (APS) 3dA/abeqToOA uot AeaAnges 4924 Twy-07-aseg No.1413-3/4 2SA1371/25C3468 20 Ic - VBE 2GA 137 17 2803468 Vom = 10V wo! (For PNP, minus sign is omitted.) | | | 1] | (4) 2 3 Pomme 25% a. 25 Collector Current,Ic - mA Collector Current,I - mA (For PNP, minus sign 0 / is omitted.) 0 02 O4 06 08 10 10 . Base~to-Emitter Voltage,VBE - V Collector-to-Emitter Voltage, VCE - V Pc - Ta z \? 28413717 2803468 1 O 10 a N G oS MN a OB DD NAN a 4 N\ wn 06 J 0] al a 4, OA o & 402 ms 3 N\ % 9 N 0 20 7 1) 6 80 Os 120 140 160 Ambient Temperature,Ta - C : ME No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevantion equipment and the like, the failure of which may directly or indireotly cause inqury, death or property loss, M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: @ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO.,, LTO., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.1413-4/4