BSP 317 SIPMOS (R) Small-Signal Transistor * P channel * Enhancement mode * Logic Level * VGS(th) = -0.8...-2.0 V Pin 1 G Type VDS ID RDS(on) Package BSP 317 -200 V -0.37 A 6 SOT-223 Type BSP 317 Ordering Code Q67000-S94 Pin 2 D Pin 3 Pin 4 S D Marking Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V -200 Unit V DGR RGS = 20 k -200 Gate source voltage VGS Continuous drain current ID TA = 25 C 20 A -0.37 DC drain current, pulsed IDpuls TA = 25 C -1.48 Power dissipation W Ptot TA = 25 C Data Sheet Values 1.8 1 05.99 BSP 317 Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA 70 Therminal resistance, junction-soldering point 1) RthJS 10 Values DIN humidity category, DIN 40 040 Unit C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 C -200 - - -0.8 -1.1 -2 VDS = -200 V, VGS = 0 V, Tj = 25 C - -0.1 -1 VDS = -200 V, VGS = 0 V, Tj = 125 C - -10 -100 VDS = -130 V, VGS = 0 V, Tj = 25 C - - -100 Gate threshold voltage V GS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current Gate-source leakage current IDSS Drain-Source on-state resistance - Data Sheet -10 -100 RDS(on) VGS = -10 V, ID = -0.37 A - 2 nA nA IGSS VGS = -20 V, V DS = 0 V A 3.4 6 05.99 BSP 317 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS 2 * ID * RDS(on)max, ID = -0.37 A Input capacitance 0.25 - 270 360 - 50 75 - 15 25 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.35 ns td(on) VDD = -30 V, V GS = -10 V, ID = -0.29 A RGS = 50 Rise time - 8 12 - 30 45 - 80 110 - 90 120 tr VDD = -30 V, V GS = -10 V, ID = -0.29 A RGS = 50 Turn-off delay time td(off) VDD = -30 V, V GS = -10 V, ID = -0.29 A RGS = 50 Fall time tf VDD = -30 V, V GS = -10 V, ID = -0.29 A RGS = 50 Data Sheet 3 05.99 BSP 317 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 C Inverse diode direct current,pulsed -0.37 - - -1.48 V V SD VGS = 0 V, IF = -0.74 A, Tj = 25 C Data Sheet - ISM TA = 25 C Inverse diode forward voltage - - 4 -0.95 -1.1 05.99 BSP 317 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS -10 V 2.0 -0.38 W A -0.32 Ptot 1.6 ID -0.28 1.4 -0.24 1.2 -0.20 1.0 -0.16 0.8 0.6 -0.12 0.4 -0.08 0.2 -0.04 0.0 0.00 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 TA 120 C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = (tp ) parameter: D = tp / T parameter : D = 0, TC=25C 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 317 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -0.9 19 Ptot = 2W jki lh g f A ID Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C e b -2.5 c -3.0 d -3.5 e -4.0 d f -4.5 g -5.0 h -6.0 i -7.0 j -8.0 -0.6 -0.5 -0.4 c -0.3 -0.2 k -9.0 b l -10.0 b c d 16 VGS [V] a -2.0 -0.7 a RDS (on) 14 12 10 8 6 e f 4 -0.1 2 a 0.0 g ki jhl VGS [V] = a b c d e f -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 g h i j -5.0 -6.0 -7.0 -8.0 k l -9.0 -10.0 0 0 -1 -2 -3 -4 -5 -6 -7 V -9 0.00 -0.10 -0.20 -0.30 -0.40 VDS A -0.60 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s parameter: tp = 80 s, -1.8 0.65 S A 0.55 ID gfs -1.4 0.50 0.45 -1.2 0.40 -1.0 0.35 -0.8 0.30 0.25 -0.6 0.20 0.15 -0.4 0.10 -0.2 0.05 0.0 0.00 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.0 VGS Data Sheet -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 A -1.6 ID 6 05.99 BSP 317 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -0.37 A, VGS = -10 V Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = -1 mA 18 -4.6 V RDS (on) -4.0 VGS(th) 14 -3.6 -3.2 12 -2.8 10 -2.4 98% 98% 8 -2.0 -1.6 6 typ typ -1.2 2% 4 -0.8 2 -0.4 0 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 Tj C 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 -10 1 pF A Ciss C IF 10 2 -10 0 Coss Crss 10 1 -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V -10 -2 0.0 -40 VDS Data Sheet -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 05.99 BSP 317 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = (Tj) parameter : D = 0.01, TC=25C -240 V -230 V(BR)DSS -225 -220 -215 -210 -205 -200 -195 -190 -185 -180 -60 -20 20 60 100 C 160 Tj Data Sheet 8 05.99