1N457/A
1N457/A, Rev. A
1N457/A
Small Signal Diode
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2002 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM Maximum Repetitive Reverse Voltage 70 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
Tstg Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature 175 °C
Symbol
Parameter
Value
Units
PD Power Dissipation 500 mW
RθJA Thermal Resistance, Junction to Ambient 300 °C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR Breakdown Voltage IR = 100 µA 70 V
VF Forward Voltage 1N457
1N457A IF = 20 mA
IF = 100 mA 1.0
1.0 V
V
IR Reverse Current VR = 60 V
VR = 60 V, TA = 150°C 25
5 nA
µA
CT Total Capacitance 1N457 V
R = 0, f = 1.0 MHz 8.0 pF
