© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 6 1Publication Order Number:
NTST40120CT/D
NTST40120CT,
NTSJ40120CTG,
NTSB40120CT-1G,
NTSB40120CTG,
NTSB40120CTT4G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Exceptionally Low VF = 0.43 V at IF = 5 A
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•Low Thermal Resistance
•High Surge Capability
•Pb−Free and Halide−Free Packages are Available
Typical Applications
•Switching Power Supplies including Notebook/Netbook Adapters,
ATX and Flat Panel Display
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing Diodes
•Reverse Battery Protection
•Instrumentation
Mechanical Characteristics
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
TO−220
CASE 221A
STYLE 6
3
4
1
VERY LOW FORWARD
VOLTAGE, LOW LEAKAGE
SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
120 VOLTS
1
3
2, 4
2
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See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
3
4
12
I2PAK
CASE 418D
STYLE 3
TO−220FP
CASE 221AH
3
4
12
D2PAK
CASE 418B
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
120 V
Average Rectified Forward Current
(Rated VR, TC = 120°C) Per Device
Per Diode
IF(AV) 40
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 125°C) Per Device
Per Diode
IFRM 80
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A
Operating Junction Temperature TJ−40 to +150 °C
Storage Temperature Tstg −40 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Rating Symbol NTST40120CTG,
NTSB40120CT−1G NTSB40120CTG NTSJ40120CTG Unit
Maximum Thermal Resistance per Diode
Junction−to−Case
Junction−to−Ambient RqJC
RqJA 1.3
70 0.79
46.3 4.0
105 °C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 20 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
(IF = 20 A, TJ = 125°C)
vF0.50
0.60
0.78
0.43
0.53
0.63
−
−
0.91
−
−
0.71
V
Maximum Instantaneous Reverse Current (Note 1)
(VR = 90 V, TJ = 25°C)
(VR = 90 V, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR16
16
−
30
−
−
500
100
mA
mA
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
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3
TYPICAL CHARACTERISITICS
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
Figure 3. Typical Junction Capacitance
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
1.0
0.1 20 VR, REVERSE VOLTAGE (VOLTS)
0.001
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
0.6 0.8 1.0 40 60
0 0.2 0.4 80
TA = 25°C
TA = 125°C
TA = 150°C
0.01
0.1
TA = 25°C
TA = 125°C
TA = 150°C
1.0
10
100
, REVERSE CURRENT (mA)
R
1.2 120
0.1 VR, REVERSE VOLTAGE (VOLTS)
10000
1000
100
110
100
TJ = 25°C
10
30 50 70 90
C
J
, JUNCTION CAPACITANCE (pF)
Figure 4. Current Derating per Leg
0
5
10
15
20
25
30
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
SQUARE WAVE
dc RqJC = 1.3°C/W
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating, Case
0
5
10
15
20
25
30
35
40
45
50
55
60
0 20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
SQUARE WAVE
dc RqJC = 1.3°C/W
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
0
2
4
6
8
10
12
0 2 10 12 14 16 18
IF(AV), AVERAGE FORWARD CURRENT (A)
PF(AV), AVERAGE FORWARD POW-
ER DISSIPATION (W)
SQUARE
WAVE dc
TA = 150°C
IPK/IAV = 5
IPK/IAV = 10
IPK/IAV = 20
468
1.4 1.6 1.8 100 110
35
40
65
70
75
80
14
16
18
20 22 2
4
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
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4
TYPICAL CHARACTERISITICS
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10
00
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
Figure 7. Typical Transient Thermal Response for NTST40120CT and NTSB40120CT−1G
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10
00
Figure 8. Typical Transient Thermal Response for NTSJ40120CTG
Figure 9. Typical Transient Thermal Response for NTSB40120CTG
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 10
00
10%
5%
2%
20%
1%
50% Duty Cycle
Single Pulse
t, Pulse Time (sec)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
http://onsemi.com
5
ORDERING INFORMATION
Device Package Shipping†
NTST40120CTG TO−220
(Pb−Free) 50 Units / Rail
NTST40120CTH TO−220
(Pb−Free and Halide−Free) 50 Units / Rail
NTSJ40120CTG TO−220FP
(Pb−Free and Halide−Free) 50 Units / Rail
NTSB40120CT−1G I2PAK
(Pb−Free) 50 Units / Rail
NTSB40120CTG D2PAK
(Pb−Free) 50 Units / Rail
NTSB40120CTT4G D2PAK
(Pb−Free) 800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MARKING DIAGRAMS
AYWW
TS40120CG
AKA
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
x = G or H
G = Pb−Free Package
H = Halide−Free Package
AYWW
TS40120CG
AKA
AYWW
TS40120CG
AKA
AYWW
TS40120Cx
AKA
TO−220 TO−220FP I2PAK D2PAK
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
I2PAK (TO−262)
CASE 418D
ISSUE D
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
−T−
W
G
K
A
C
E
V
J
H
123
4
SEATING
PLANE
D3 PL
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.335 0.380 8.51 9.65
B0.380 0.406 9.65 10.31
C0.160 0.185 4.06 4.70
D0.026 0.035 0.66 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.094 0.110 2.39 2.79
J0.013 0.025 0.33 0.64
S0.390 REF 9.90 REF
V0.045 0.070 1.14 1.78
W0.522 0.551 13.25 14.00
−B−
M
B
M
0.13 (0.005) T
S
F
F0.122 REF 3.10 REF
K0.500 0.562 12.70 14.27
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
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7
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD
CASE 221AH
ISSUE F
DIM MIN MAX
MILLIMETERS
D14.70 15.30
E9.70 10.30
A4.30 4.70
b0.54 0.84
P3.00 3.40
e
L1 --- 2.80
c0.49 0.79
L12.50 14.73
b2 1.10 1.40
Q2.80 3.20
A2 2.50 2.90
A1 2.50 2.90
H1 6.60 7.10
E
Q
L1
b2
e
D
L
P
123
b
SEATING
PLANE
AA1
H1
A2
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE
PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO
EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE
MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION.
LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00.
6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY
MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1
AND H1 FOR MANUFACTURING PURPOSES.
2.54 BSC
M
0.14 M
A
A
B
C
E/2
M
0.25 M
AB
3X
C
3X
B
NOTE 3
FRONT VIEW SIDE VIEW
SECTION D−D
ALTERNATE CONSTRUCTION SECTION A−A
ANOTE 6
A
DD
NOTE 6
H1
NTST40120CT, NTSJ40120CTG, NTSB40120CT−1G, NTSB40120CTG,
NTSB40120CTT4G
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8
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NTST40120CT/D
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al
Sales Representative
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