©2002 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. A1
IGBT
SGL50N60RUFD
SGL50N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar
Transistors (IGB Ts) provide low c onduct ion and switching
losses as well as short circuit ruggedness. The RUFD
series is designed for applications such as motor control,
uninterrupted power s upplies ( UPS) and general inve rters
where short circuit ruggedness is a required feature.
Features
• Short circuit rated 10us @ TC = 100°C, VGE = 15V
• High speed switching
• Low saturation voltage : VCE(sat) = 2.2 V @ IC = 50A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description SGL50N60RUFD Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C80 A
Collector Current @ TC = 100°C50 A
ICM (1) Pulsed Collector Current 150 A
IFDiode Continuous Forward Current @ TC = 100°C30 A
IFM Diode Maximum Forward Current 90 A
TSC Short Circuit Withstand Time @ TC = 100°C10 us
PDMaximum Power Dissipation @ TC = 25°C 250 W
Maximum Power Dissipation @ TC = 100°C 100 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Juncti on-to-Case -- 0.5 °C/W
RθJC(DIOD E) Thermal Resistance, Junction-to- Case -- 1.0 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 25 °C/W
Applications
AC & DC motor controls, general purpose inverters, robotics , and servo controls.
GCETO-264
G
C
E
G
C
E
SGL50N60RUFD Rev. A1
SGL50N60RUFD
©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G -E Threshold Voltage Ic = 50mA, VCE = VGE 5.0 6.0 8.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 50A, VGE = 15V -- 2.2 2.8 V
IC = 80A, VGE = 15V -- 2.5 -- V
Dynamic Characteristics
Cies Input Capacitance VCE=30V, VGE = 0V,
f = 1MHz
-- 3311 -- pF
Coes Output Capacitance -- 399 -- pF
Cres Reverse Transfer Capacitance -- 139 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 26 -- ns
trRise Time -- 89 -- ns
td(off) Turn-Off D e l a y Time -- 66 100 n s
tfFall Time -- 118 200 ns
Eon Turn-On Switching Loss -- 1.68 -- mJ
Eoff Tu r n - Off Sw i tchin g Loss -- 1. 0 3 - - mJ
Ets Total Switching Loss -- 2.71 3.8 mJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 50A,
RG = 5.9Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 28 -- ns
trRise Time -- 91 -- ns
td(off) Turn-Off D e l a y Time -- 68 110 ns
tfFall Time -- 261 400 ns
Eon Turn-On Switching Loss -- 1.7 -- mJ
Eoff Tu r n - Off Sw i tchin g Loss -- 2. 3 1 - - mJ
Ets Total Switching Loss -- 4.01 5.62 mJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V
@ TC = 100°C 10 -- -- us
QgTotal Gate Charge VCE = 300 V, IC = 50A,
VGE = 15V
-- 145 210 nC
Qge Gate-Emitter Charge -- 25 35 nC
Qgc Gate-Collector Charge -- 70 100 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 18 -- nH
Symbol Parameter Test Conditions Min. Typ. Max. Units
VFM Diode Forward V oltage IF = 30A TC = 25°C-- 1.9 2.8 V
TC = 100°C-- 1.8 --
trr Diode Reverse Recovery Time
IF= 30A,
di/dt = 200 A/us
TC = 25°C-- 70 100 ns
TC = 100°C-- 140 --
Irr Diode Peak Reverse Recovery
Current TC = 25°C-- 6 7.8 A
TC = 100°C-- 8 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 200 360 nC
TC = 100°C-- 580 --
SGL50N60RUFD Rev. A1
SGL50N60RUFD
©2002 Fairchild Semiconductor Corporation
Fig 1. Ty pica l Output Cha rac teristics Fig 2. Ty pical Sat ur ation Voltage Characteristics
Fig 3. Saturation Vo ltage vs. Cas e
Temperature at Variant Current Level Fig 4 . Load Cur rent vs. Freque ncy
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
02468
0
20
40
60
80
100
120
140 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
110
0
20
40
60
80
100
120
140
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125℃ ------
Collector Current , I
C [A]
Collect or - Emitter Voltag e, V CE [V]
-50 0 50 100 150
0
1
2
3
4
5
50A
100A
IC = 30A
Common Emitter
VGE = 15V
Collector - Emitter Voltage, V
CE [V]
Case Temperature, TC [ ℃]
0 4 8 12 16 20
0
4
8
12
16
20 Common Emitter
TC = 25℃
100A
50A
IC = 30A
Collector - Emitter Vo ltage , V
CE [V]
Ga te - Em itter Vo ltage, VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20 Com mon Emitter
TC = 125℃
100A
50A
IC = 30A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V ]
0
10
20
30
40
50
60
1 10 100 1000
Duty cycle : 50%
TC = 100℃
Power Dissipation = 70W
VCC = 300V
Load Curren t : p eak of s q uar e w ave
Frequency [KHz]
Load Current [A]
SGL50N60RUFD Rev. A1
SGL50N60RUFD
©2002 Fairchild Semiconductor Corporation
Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9 . Turn-Off C haracte ri st i cs vs.
Gate Resistance Fig 10. Switc hi ng Loss vs. Gate Re sist ance
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Tur n- O ff Ch ar acterist ics vs.
Collector Current
110
0
1000
2000
3000
4000
5000
6000
7000
Cres
Coes
Cies
Common Emitter
VGE = 0 V, f = 1MHz
TC = 25℃
Capacitance [pF]
Collector - E m itter V oltag e, VCE [V ]
10 100
100
1000 Common Emit ter
VCC = 300V, VGE = ±15V
IC = 50A
TC = 25℃ ━━
TC = 12 5 ℃ ------ Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
10 100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 50A
TC = 25℃ ━━
TC = 125 ℃ ------
Switch ing Time [ns]
Gate Resistance, RG [Ω]
10 100
1000
10000
Eoff
Eon
Eoff
Common E m i tter
VCC = 300V, VGE = ±15V
IC = 50A
TC = 25℃ ━━
TC = 125℃ -- ----
Switching Loss [uJ]
Gate Resistance, RG [Ω]
10 20 40 60 80 100
10
100
1000
Ton
Tr
Common Emitter
VGE = ±15V, RG = 5.9Ω
TC = 25℃ ━━
TC = 125 ℃ ------
Switching Time [ns]
Collector Current, IC [A ]
10 20 40 60 80 100
100
1000
Tf
Toff
Toff
Tf
Common Emitter
VGE = ±15 V, RG = 5.9Ω
TC = 25℃ ━━
TC = 125℃ ------
Swi t chi ng Time [ns]
Collector Current, IC [A]
SGL50N60RUFD Rev. A1
SGL50N60RUFD
©2002 Fairchild Semiconductor Corporation
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al Response, Zthjc [℃/W]
Rectangu lar Pulse Duration [sec]
10 20 40 60 80 100
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VGE = ±15V, RG = 5.9Ω
TC = 25℃ ━━
TC = 125℃ ------
Switching Loss [uJ]
Collector Cur rent, IC [A]
0 30 60 90 120 150 180
0
3
6
9
12
15
300 V
200 V
VCC = 100 V
Comm on Emi tt er
RL = 6Ω
TC = 25℃
Gate - Emitter Voltage, V
GE [ V ]
Gate Charge, Qg [ nC ]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 20V, TC = 100℃
Colle c tor C ur r e nt , I
C [A]
Collect or-Emitter Voltage, VCE [V]
Fig 14. Gate C harge Characteri st i cs
Fig 13. Sw itching Los s vs. C ol l ect or C urr ent
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 17. Tra nsien t The rma l Imped anc e of IGBT
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = P dm
×
Zthjc + T
C
0.3 1 10 100 1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse TC = 25℃
Curv es m ust be derated
linearly with inc rease
in temp er ature
50us
100us
1㎳
DC Operation
IC MAX. (Continuous)
IC MAX. (P ulse d)
Coll ector Current , I
C [A]
Collector-Emitter Volt age, VCE [V ]
SGL50N60RUFD Rev. A1
SGL50N60RUFD
©2002 Fairchild Semiconductor Corporation
Fig 19. Re ve rse Reco ver y Cu r r entFig 18. Forward Characteristics
Fig 20. Stored Charge Fig 21. Rever se Recovery Time
1
10
100
01234
TC = 25℃ ━━
TC = 100℃ ------
For war d Vo ltag e D r op, V FM [V]
For w ard Current , I
F [A]
100 1000
1
10
100 VR = 20 0V
IF = 30A
TC = 25℃ ━━
TC = 100℃ ------
Reverse Recovery Current, I
rr [A]
di/dt [A/us]
100 1000
0
200
400
600
800
1000
1200
1400 VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100℃ ------
Stored Recovery Charge, Q
rr [nC]
di/dt [A/us ]
100 1000
20
40
60
80
100
120
140
160
180
200 VR = 200V
IF = 30A
TC = 25℃ ━━
TC = 100℃ ------
Reverce Recovery Tim e, t
rr [ns]
di/dt [A/ us ]
©2002 Fairchild Semiconductor Corporation SGL50N60RUFD Rev. A1
SGL50N60RUFD
Package Dimension
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
4.90
±0.20
20.00
±0.20
(8.30) (8.30) (1.00)
(0.50)
(2.00)
(7.00)
(R1.00)
(R2.00)
ø3.30
±0.20
(7.00)
(1.50)
(1.50) (1.50)
2.50
±0.20
3.00
±0.20
2.80
±0.30
1.00
+0.25
–0.10
0.60
+0.25
–0.10
1.50
±0.20
6.00
±0.20
20.00
±0.20
20.00
±0.50
5.00
±0.20
3.50
±0.20
2.50
±0.10
(9.00)
(9.00)
(2.00)
(1.50)
(0.15)
(2.80) (4.00)
(11.00)
TO-264
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended f or surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical compon ent is any com ponent of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Ident i ficati on Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reser ves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5©2002 Fairchild Semiconductor Corporation
STAR*POWER is used under license
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET®
VCX™
Product Folder - Fairchild P/N SGL50N60RUFD - Discrete, Short Circuit Rated IGBT with Diode
Fairchild Semiconductor
space
space
space
SEARCH | Parametric | Cross Reference
space
Product Folders and
Datasheets
Application
notes
space
space
space
find products
Home >> Find products >>
space
space
space
space
Products groups
space
Analog and Mixed
Signal
Discrete
Interface
Logic
Microcontrollers
Non-Volatile
Memory
Optoelectronics
Markets and
applications
New products
Product selection and
parametric search
Cross-reference
search
technical information
buy products
technical support
my Fairchild
company
SGL50N60RUFD
Discrete, Short Circuit Rated IGBT with Diode Related Links
Request samples
Dotted line
How to order products
Dotted line
Product Change Notices
(PCNs)
Dotted line
Support
Dotted line
Distributor and field sales
representatives
Dotted line
Quality and reliability
Dotted line
Design tools
Contents
General description | Features | Applications |
Product status/pricing/packaging |
Application notes
General description
Fairchild's RUFD series of Insulated Gate
Bipolar Transistors (IGBTs) provide low
conduction and switching losses as well as
short circuit ruggedness. The RUFD series is
designed for applications such as motor
control, uninterrupted power supplies (UPS)
and general inverters where short circuit
ruggedness is a required feature.
back to top
Features
● Short Circuit rated 10us @ T C =
100°C, V GE = 15V
● High Speed Switching
● Low Saturation Voltage : V CE(sat) = 2.1
V @ I C = 50A
● High Input Impedance
● CO-PAK, IGBT with FRD : t rr = 50ns
(typ.)
back to top
Applications
space
Datasheet
Download this
datasheet
PDF
e-mail this datasheet
[E-
mail]
This pagePrint version
file:///C|/PDF/SGL50N60RUFD.html (1 of 2) [27-Jul-02 4:54:05 PM]
GO
Product Folder - Fairchild P/N SGL50N60RUFD - Discrete, Short Circuit Rated IGBT with Diode
AC &DC Motor controls,General
Purpose Inverters, Robotics, Servo
Controls
back to top
Product status/pricing/packaging
Product Product status Pricing* Package type Leads Packing method
SGL50N60RUFDTU Full Production $10.09 TO-264 3 RAIL
SGL50N60RUFDGTU Full Production $10.09 TO-264 3 RAIL
* 1,000 piece Budgetary Pricing
back to top
Application notes
AN-9020: AN-9020 IGBT Basic II (384 K) Jul 19, 2002
back to top
space
space
Home | Find products | Technical information | Buy products |
Support | Company | Contact us | Site index | Privacy policy
© Copyright 2002 Fairchild Semiconductor
space
space
file:///C|/PDF/SGL50N60RUFD.html (2 of 2) [27-Jul-02 4:54:05 PM]
