Parameter Max. Units
VDS Drain- Source Voltage 30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 7.3
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 5.8 A
IDM Pulsed Drain Current 58
PD @TC = 25°C Power Dissipation 2.5
PD @TC = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µs 30 V
EAS Single Pulse Avalanche Energy70 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
HEXFET® Power MOSFET
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
VDSS = 30V
RDS(on) = 0.030Ω
lGeneration V Technology
lUltra Low On-Resistance
lN-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lDynamic dv/dt Rating
lFast Switching
lLead-Free
IRF7201PbF
Description
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
9/30/04
Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient––– 50 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
SO-8
PD- 95022
IRF7201PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030 VGS = 10V, ID = 7.3A
––– ––– 0.050 VGS = 4.5V, ID = 3.7A
VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.8 ––– ––– S VDS = 15V, ID = 2.3A
––– ––– 1.0 VDS = 24V, VGS = 0V
––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V
QgTotal Gate Charge ––– 19 28 ID = 4.6A
Qgs Gate-to-Source Charge ––– 2.3 3.5 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time ––– 7.0 ––– VDD = 15V
trRise Time ––– 35 ––– ID = 4.6A
td(off) Turn-Off Delay Time ––– 21 ––– RG = 6.2Ω
tfFall Time ––– 19 ––– RD = 3.2Ω,
Ciss Input Capacitance ––– 550 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 4.6A, VGS = 0V
trr Reverse Recovery Time ––– 48 73 ns TJ = 25°C, IF = 4.6A
Qrr Reverse RecoveryCharge ––– 73 110 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
58
2.5
A
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
VDD = 15V, starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A. (See Figure 8)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
IRF7201PbF
www.irf.com 3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20µs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 3.5 4.0 4.5 5.0 5.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20µs PULSE WIDTH
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
IRF7201PbF
4www.irf.com
Fig 5. Normalized On-Resistance
Vs. Temperature
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 4.6A
D
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
0
40
80
120
160
200
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 2.1A
3.7A
BOTTOM 4.6A
D
Fig 6. On-Resistance Vs. Drain Current
Fig 7. On-Resistance Vs. Gate Voltage
0.02
0.03
0.04
0.05
2 4 6 8 10 12 14 16
A
R , Drain-to-Source On Resistance
DS(on)
(Ω)
GS
V , Gate-to-Source Voltage (V)
I = 7.3A
D
0.00
0.05
0.10
0.15
0.20
0 10203040
A
I , Drain Current (A)
D
(Ω)
V = 10V
GS
V = 4.5V
GS
DS(on)
R , Drain-to-Source On Resistance
IRF7201PbF
www.irf.com 5
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
V = 24V
V = 15V
DS
DS
I = 4.6A
D
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7201PbF
6www.irf.com
θ
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B ASI C
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L INE CONF OR MS T O JE D E C OU T L I NE MS -0 12 AA.
NOT E S :
1. DIMENS IONING & T OLERANCING PE R AS ME Y14.5M-1994.
2. CONT ROLLING DIME NS ION: MILLIME TE R
3. DI ME NS I ONS ARE S H OWN I N MI L L IME T E R S [I NCH E S ].
5 DIMENS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .
6 DIMENS ION DOE S NOT INCL UDE MOL D PROT RUS IONS .
MOLD PROT RUSIONS NOT TO E XCE E D 0.25 [.010].
7 DIMENS ION IS T HE LE NGT H OF LEAD F OR SOLDERING T O
A S UBS T RATE.
MOLD PROT RUSIONS NOT TO E XCE E D 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S IT E CODE
IRF7201PbF
www.irf.com 7
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
