NJG1602HE3
- 1 -
Ver.2003-05-20
DPDT SWITCH GaAs MMIC
Q GENERAL DESCRIPTION Q PACKAGE OUTLINE
NJG1602HE3 is a GaAs high power DPDT switch MMIC
for antenna switch of tri- and dual-mode cellular phone
application such as CDMA, GPS and PCS.
This switch features low loss, high isolation at high power.
This device includes logic decoder function, and can be
operated by 1 bit control signal for path switching.
The ultra small & ultra thin USB12 package is adopted.
Q FEATURES
O Low voltage operation +2.5V min.
O Pin at 0.2dBcompression point 36dBm typ. @f=0.9GHz, VCTL=2.7V
O Low insertion loss 0.3dB typ. @f=0.9GHz, PIN=25dBm, VCTL=2.7V
0.55dB typ. @f=1.9GHz, PIN=25dBm, VCTL=2.7V
O High isolation 21dB typ. @f=0.9GHz, PIN=25dBm, VCTL=2.7V
15dB typ. @f=1.9GHz, PIN=25dBm, VCTL=2.7V
O Low current consumption 17uA typ. @f=0.9GHz, PIN=25dBm, VCTL=2.7V
O Ultra small & ultra thin package USB12-E3 (Package size: 2.35x2.35x0.75mm)
Q PIN CONFIGURATION
Q TRUTH TABLE
Pin connection
1. VDD
2. P1
3. GND
4. P2
5. GND
6. P3
7. GND
8. P4
9. GND
10.GND
11.GND
12.CTL
USB12Type
(Top View)
NOTE: Please note that any information on this catalog will be subject to change.
1
10
9
8
7
65
4
3
2
12
11
“H”=CTL(H), “L”=CTL(L)
CTL H
P1-P4, P2-P3
L
P1-P2, P3-P4 ON ON
OFF
OFF
NJG1602HE3
- 2 - Ver.2003-05-20
Q ABSOLUTE MAXIMUM RATINGS (Ta=+25°C, Zs=Zl=50Ω)
PARAMETER SYMBOL CONDITIONS CONDITIONS UNITS
RF Input Power PIN V
DD =2.7V, CTL=0V/2.7V 37 dBm
Supply Voltage VDD VDD terminal 7.5 V
Control Voltage VCTL CTL terminal 7.5 V
Power Dissipation PD 250 mW
Operating Temp. Topr -40~+85 °C
Storage Temp. Tstg -55~+150 °C
Q ELECTRICAL CHARACTERISTICS
(General conditions: Ta=+25°C, Zs=Zl=50Ω, VDD=2.7V, CTL(L)=0V, CTL(H)=2.7V )
PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS
Operating Current IDD PIN=25dBm - 70 100 uA
Supply Voltage VDD - 2.7 5.5 V
Control Voltage (LOW) CTL(L) 0 - 0.8 V
Control Voltage (HIGH) CTL(H) 2.5 2.7 VDD V
Control Current ICTL f=0.9GHz, PIN=25dBm - 17 30 uA
Insertion Loss 1 LOSS1 f=0.9GHz, PIN=25dBm - 0.3 0.4 dB
Insertion Loss 2 LOSS2 f=1.9GHz, PIN=25dBm - 0.55 0.7 dB
Isolation 1 ISL1 f=0.9GHz, PIN=25dBm 20 21 - dB
Isolation 2 ISL2 f=1.9GHz, PIN=25dBm 14 15 - dB
Pin at 0.2dB
Compression Point P-0.2dB f=1.9GHz 33 36 - dBm
2nd Harmonics 1 2fo(1) f=0.9GHz, PIN=25dBm - -80 -65 dBc
2nd Harmonics 2 2fo(2) f=1.9GHz, PIN=25dBm - -75 -70 dBc
3rd Harmonics 1 3fo(1) f=0.9GHz, PIN=25dBm - -75 -60 dBc
3rd Harmonics 2 3fo(2) f=1.9GHz, PIN=25dBm - -70 -60 dBc
Input 3 rd order
intercept Point 1 IIP3(1) f=900+901MHz,
Pin=25dBm *1 56 62 - dBm
Input 3 rd order
intercept Point 2 IIP3(2) f=1900+1901MHz,
Pin=25dBm *1 54 60 - dBm
VSWR VSWRi on-state ports, f=0.9GHz - 1.1 1.4
Switching time TSW f=0.1~2.5GHz - 1.2 - us
*1: The input IP3 is defined as following equation.
IIP3=(3 x Pout - IM3) / 2 + LOSS
NJG1602HE3
- 3 -
Ver.2003-05-20
Q TERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1 VDD
Positive voltage supply terminal. The positive voltage (+2.5~+5.5V) have to be
supplied. Please connect a bypass capacitor with GND terminal for excellent
RF performance.
2 P1
RF port. This port is connected with P4 port by controlling 12pin-CTL(H)
(+2.5~+VDD).
This port is connected with P2 port by controlling 12pin- CTL(L) (0~+0.8V) .
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
3 GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
4 P2
RF port. This port is connected with P3 port by controlling 12pin- CTL(L)
(0.2~+0.8V).
This port is connected with P3 port by controlling 12pin- CTL(H)(+2.5~+VDD).
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
5 GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
6 P3
RF port. This port is connected with P2 port by controlling 12pin- CTL(H)
(+2.5~+VDD).
This port is connected with P4 port by controlling 12pin-VCTL(L) (0~+0.8V).
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
7 GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
8 P4
RF port. This port is connected with P1 port by controlling 12pin- CTL(H)
(+2.5~+VDD).
This port is connected with P3 port by controlling 12pin- CTL(L) (0~+0.8V).
A DC cut capacitor 56pF is required at this terminal to block DC voltage of
inner circuit.
9 GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
10 GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
11 GND
Ground terminal. Please connect this terminal with ground plane as close as
possible for excellent RF performance.
12 CTL
Control signal input terminal.
This terminal is set to High-Level (+2.5V~VDD) or Low-Level (0~+0.8V).
NJG1602HE3
- 4 - Ver.2003-05-20
Q ELECTRICAL CHARACTERISTICS
(0.1~3.0GHz, with application circuit, Losses of external circuit are excluded)
-2.0
-1.5
-1.0
-0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=0V)
P1-P 2 Inse rt i on Loss vs. Fre quenc y
Insertion Loss(dB)
-2.0
-1.5
-1.0
-0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=0V)
P3-P 4 Inse rt i on Loss vs. Fre que ncy
Insertion Loss(dB)
-2.0
-1.5
-1.0
-0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=2.7V)
P1-P 4 Inse rt i on Loss vs. Fre que ncy
Insertion Loss(dB)
-2.0
-1.5
-1.0
-0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=2.7V)
P2-P 3 Inse rt i on Loss vs. Fre que ncy
Insertion Loss(dB)
1.0
1.2
1.4
1.6
1.8
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=0V, P1port)
P1-P 2 VSWR vs. Fr eque ncy
VSWR
1.0
1.2
1.4
1.6
1.8
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=2.7V, P4port)
P1-P 4 VSWR vs. Fr eque ncy
VSWR
NJG1602HE3
- 5 -
Ver.2003-05-20
-2.0
-1.5
-1.0
-0.5
0.0
18 20 22 24 26 28 30 32 34 36 38
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Power(dB m )
(P1-P2 O N, f =0.9GHz )
Insertion Loss vs. Input Power
Insertion Loss(dB)
-2.0
-1.5
-1.0
-0.5
0.0
18 20 22 24 26 28 30 32 34 36 38
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Pow e r(dB m)
(P1-P 2 ON, f =1.9G Hz )
Insertion Loss vs. Input Power
Insertion Loss(dB)
Q ELECTRICAL CHARACTERISTICS
(0.1~3.0GHz, with application circuit, Losses of external circuit are excluded)
-45
-40
-35
-30
-25
-20
-15
-10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=2.7V)
P1-P2 Isolation vs. Frequency
Isolation(dB)
-45
-40
-35
-30
-25
-20
-15
-10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=2.7V)
P3-P4 Isolation vs. Frequency
Isolation(dB)
-45
-40
-35
-30
-25
-20
-15
-10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=0V)
P1-P4 Isolation vs. Frequency
Isolation(dB)
-45
-40
-35
-30
-25
-20
-15
-10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency(GHz)
(VDD=2.7V, VCTL=0V)
P2-P3 Isolation vs. Frequency
Isolation(dB)
NJG1602HE3
- 6 - Ver.2003-05-20
0
50
100
150
200
250
18 20 22 24 26 28 30 32 34 36 38
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Power(dB m )
(P1-P2 O N, f =0.9GHz )
IDD vs. Input Power
IDD(uA)
0
50
100
150
200
250
18 20 22 24 26 28 30 32 34 36 38
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Powe r (dBm )
(P 1-P2 O N, f=1.9G Hz)
IDD(uA)
IDD vs. Input Power
Q ELECTRICAL CHARACTERISTICS
(with application circuit )
-25
-20
-15
-10
18 20 22 24 26 28 30 32 34 36 38
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Power ( dBm )
P1-P2 Isolation(dB)
(P1-P4 ON, CTL=2.7V, f=0.9GHz)
Isolation vs.Input Power
-25
-20
-15
-10
18 20 22 24 26 28 30 32 34 36 38
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Power ( dBm )
P1-P2 Isolation(dB)
(P1-P4 ON, CTL=2.7V, f=1.9GHz)
Isolation vs.Input Power
NJG1602HE3
- 7 -
Ver.2003-05-20
-110
-100
-90
-80
-70
-60
-50
-40
-30
16 18 20 22 24 26 28 30 32
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input 2fo Level
2nd Harmonics(dBc)
Input Pow e r(dB m)
(P1-P2 O N, f =0.9GHz )
2nd Harmonics vs. Input Power
-110
-100
-90
-80
-70
-60
-50
-40
-30
16 18 20 22 24 26 28 30 32
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input 2fo Level
2nd Harmonics(dBc)
Input Powe r (dBm )
(P1-P 2 ON, f =1.9G Hz )
2nd Harmonics vs. Input Power
-110
-100
-90
-80
-70
-60
-50
-40
-30
16 18 20 22 24 26 28 30 32
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input 3fo Lev el
Input Pow e r(dB m)
3rd Harmonics(dBc)
(P 1-P2 O N, f=1.9G Hz)
3rd Harmonics vs. Input Power
Q ELECTRICAL CHARACTERISTICS
(with application circuit )
-110
-100
-90
-80
-70
-60
-50
-40
-30
16 18 20 22 24 26 28 30 32
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input 3fo Level
3rd Harmonics(dBc)
Input Pow e r(dB m)
(P1-P2 O N, f =0.9GHz )
3rd Harmonics vs. Input Power
NJG1602HE3
- 8 - Ver.2003-05-20
35
40
45
50
55
60
65
70
20 21 22 23 24 25 26 27
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Pow e r(dB m)
(P1-P2 ON, f=900+901MHz)
IIP3(dBm)
I IP3 vs. Input Power
-80
-70
-60
-50
-40
-30
-20
-10
0
20 21 22 23 24 25 26 27
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Power(dB m )
(P1-P2 ON, f=900+901MHz)
IM3(dBm)
IM3 vs. Input Power
35
40
45
50
55
60
65
70
20 21 22 23 24 25 26 27
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Powe r (dBm )
(P 1- P 2 ON, f =1900+190 1M Hz )
IIP3(dBm)
IIP3 vs. Input Power
-80
-70
-60
-50
-40
-30
-20
-10
0
20 21 22 23 24 25 26 27
VDD=2.5V
VDD=2.7V
VDD=5.5V
Input Pow e r(dB m)
(P 1-P 2 ON, f =19 00+190 1M H z )
IM3(dBm)
IM3 vs. Input Power
Q ELECTRICAL CHARACTERISTICS
(with application circuit )
-70
-50
-30
-10
10
30
50
70
20 30 40 50 60 70
I M3,Output Power(dB m )
Input Power(dBm)
Output Power
IM3
IIP3=61.4dBm
(Input Power=25dBm)
(P1 -P2 ON, V DD=2.7V, VCTL=0V, f=900+90 1MHz)
Output Power,IM3 vs. Input Power
-70
-50
-30
-10
10
30
50
70
20 30 40 50 60 70
I M 3,Output Pow er(d B m)
Input Power(dBm)
Output Power
IM3
IIP3=58.6dBm
(Input Power=25dBm)
(P1 -P2 ON, V DD=2.7V, VCTL=0V, f = 1900+ 1901MHz)
Output Power,IM3 vs. Input Power
NJG1602HE3
- 9 -
Ver.2003-05-20
-2.0
-1.5
-1.0
-0.5
0.0
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
(P1-P2 ON, f=0.9GHz, Pin=25dBm)
Insertion Loss vs. Ambient Temperature
Insertion Loss(dB)
Ambient Temperature(
o
C)
-2.0
-1.5
-1.0
-0.5
0.0
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Am bient Temperature(
o
C)
(P1-P2 ON, f=1.9GHz, Pin=2 5dBm)
Insertion Loss vs. Ambient Temperature
Insertion Loss(dB)
0
50
100
150
200
250
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
(P1-P2 ON, f=0.9GHz, Pin=25dBm)
IDD vs. A mbient Temperature
IDD(uA)
Ambient Temperature(
o
C)
0
50
100
150
200
250
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
(P1-P2 ON, f=1.9GHz, Pin=25dBm)
IDD vs. A mbient Temperature
IDD(uA)
Ambient Temperature(
o
C)
Q ELECTRICAL CHARACTERISTICS
(with application circuit, Losses of external circuit are excluded)
Q ELECTRICAL CHARACTERISTICS
(with application circuit )
-25
-20
-15
-10
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
(P1-P4 ON, f=0.9GHz, Pin=25dBm)
Isolation vs. Ambient Temperature
P1-P2 Is olat ion (d B)
Ambi ent Tempera ture(oC)
-25
-20
-15
-10
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
(P1-P4 ON, f=1.9GHz, Pin=25dBm)
Isolation vs. Ambient Temperature
P1-P2 Is olat ion (d B)
Ambi ent Tempera ture(oC)
NJG1602HE3
- 10 - Ver.2003-05-20
30
31
32
33
34
35
36
37
38
-50 0 50 100
VDD=2.5V
VDD=2.7V
VDD=5.5V
Compliance
Am bient Temperature(
o
C)
P-0.2dB(dBm)
(P1-P2 O N, f =0.9GHz )
P-0.2dB vs. Ambient Temperature
30
31
32
33
34
35
36
37
38
-50 0 50 100
VDD=2.5V
VDD=2.7V
VDD=5.5V
Compliance
P-0.2dB(dBm)
Am bient Temperature(
o
C)
(P1-P2 ON, f=1.9GHz)
P-0.2dB vs. A mbient Temperature
-110
-100
-90
-80
-70
-60
-50
-40
-30
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
A mbien t Temperat ur e(
o
C)
(P1-P2 ON, f=0.9GHz, Pin=25dBm)
2nd Harmonics vs. Ambient Temperature
2nd Harmonics(dBc)
-110
-100
-90
-80
-70
-60
-50
-40
-30
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Ambient Temperature(
o
C)
(P1-P2 ON, f=0.9GHz, Pin=25dBm)
3rd Harmonics vs. Ambient Temperature
3rd Harmonics(dBc)
Q ELECTRICAL CHARACTERISTICS
(with application circuit )
-110
-100
-90
-80
-70
-60
-50
-40
-30
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Ambient Temperature(
o
C)
(P1-P2 ON, f=1.9GHz, Pin=25dBm)
2nd Harmonics vs. Ambient Temperature
2nd Harmonics(dBc)
-110
-100
-90
-80
-70
-60
-50
-40
-30
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
A mbien t Temperat ur e(
o
C)
(P1-P2 ON, f=1.9GHz, Pin=25dBm)
3rd Harmonics vs. Ambient Temperature
3rd Harmonics(dBc)
NJG1602HE3
- 11 -
Ver.2003-05-20
45
50
55
60
65
70
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Ambient Temperature(
o
C)
(P1-P2 ON, f=900+901MHz, Pin=25dBm)
IIP3 vs. Ambient Temperature
IIP3(dBm)
-70
-60
-50
-40
-30
-20
-10
0
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Ambient Temperature(
o
C)
(P1-P2 ON, f=900+901MHz, Pin=25dBm)
IM3 vs. Ambient Temperature
IM3(dBm)
Swit c hing Speed
(Vctl(L)=0V, Vctl(H)=2.7V)
1.2us
Q ELECTRICAL CHARACTERISTICS
(with application circuit )
45
50
55
60
65
70
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Ambient Temperature(
o
C)
(P1-P 2 ON, f=1900+1901 MHz, P in= 25dBm)
IIP3 vs. Ambient Temperature
IIP3(dBm)
-70
-60
-50
-40
-30
-20
-10
0
VDD=2.5V
VDD=2.7V
VDD=5.5V
-50 0 50 100
Ambient Temperature(
o
C)
(P1-P 2 ON, f=1900+1901 MHz, P i n=25dBm)
IM3 vs. Ambient Temperature
IM3(dBm)
NJG1602HE3
- 12 - Ver.2003-05-20
QPACKAGE OUTLINE (USB12-E3)
QRECOMMENDED PCB DESIGN
Q PARTS LIST
Parts Notes
C1 1000pF MURATA (GRP15)
C2~C5 56pF MURATA (GRP15)
P1
P2
P4
P3
VDD CTL
C4
GND
C2
C1 C5
C3
MARK
QCircuit losses including losses of
capacitors and connectors
Frequency 900MHz 1.9GHz
Loss(dB) 0.20dB 0.32dB
12 11 10
4 5 6
3
2
1
7
8
9
P2
C 3
P 1
C 2
P 3
C4
P 4
C5
C 1
CTL
VDD
PCB SIZE=26mmX26mm
PCB: FR-4, t=0.5mm
Capacitor: size 1005
Strip line Width=1.0mm (Z0=50Ω)
NJG1602HE3
- 13 -
Ver.2003-05-20
Q MEASURING BLOCK DIAGRAM
Power M eter
HPA
R&K A0825-4343-R
ATT 3dB -20dB Coupler
HP 778D
DUT
Power M eter ATT 3dB
-20dB Coupler
HP 778D
Signal Generator
E4425B
50
Ω
Isolator Isolator Isolator
Power Me ter
HPA
R&K A0 825-4343-R
Isolator
ATT 3dB -20dB Coupl e r
HP 7 78D
DUT
Isolator
ROHDE&SCHWARZ
FSEM30
10dB AT T
Signal Generator
E4425B
30dB AT T
Signal Generator
E4432B
Signal Generator
E4425B
DUT
S pect rum Analyzer
E4440A
30dB ATT
Ste p ATT
Power
Divider/Combiner
HPA
R&K A0825-4343-R
HPA
R&K A0825-4343-R
Isolator
Isolator
Pin-Pout Measuring Block Diagram
2fo, 3fo Measuring Block Diagram
IM3, IIP3 Measuring Block Diagram
NJG1602HE3
- 14 - Ver.2003-05-20
TERMINAL TREAT :Au
PCB :FR5
Molding material : Epoxy resin
UNIT :mm
WEIGHT :17mg
0.75 0.05
2.35 0.05
2.35 0.05
0.3
3- 0.2 0.1
12-0.2 0.05
0.5 0.5
R0.075
1.1 0.1
0.038 0.01
123
4
5
6
7
8
9
10
11
12
0.1
0.14 0.05
0.5
0.65
0.2 0.1
9-0.15
9-0.35
Q PACKAGE OUTLINE(USB12-E3)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this
p
roduct,
p
lease obe
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[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Mouser Electronics
Authorized Distributor
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NJR:
NJG1602HE3-TE1