HAL320 Differential Hall Effect Sensor IC alam MICRONAS | INTERMETALL & MICRONAS 5281499108 INTERMETALLHAL320 Ditferential Hall Effect Sensor IC in CMOS technology Introduction The HAL320 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperature- compensated Hall plates (2.25 mm apar}) with active off- set compensation, a differential amplitier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2). The HAL320 is a differential sensor which responds to spatial ditferences of the magnetic field. The Hall volt- ages at the two Hall plates, S$; and Ss, are amplitied with a differential amplifier. The ditferential signal is compared with the actual switching level of the internal Schmitt trigger. Accordingly, the output transistor is switched on or off. The sensor has a bipolar switching behavior and requires positive and negative values of AB = Bg; Bg for correct operation. Basically, there are two ways to generate the differential signal AB: Rotating a multi-pole-ring in front of the branded side of the package (see Fig. 4, Fig. 5, and Fig. 6). Back-bias applications: A magnet on the back side of the package generates a back-bias field at both Hall plates. The differential signal AB results from the magnetic modulation of the back-bias field by a rotating ferromagnetic target. The active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture. The sensor is designed for industrial and automotive ap- plications and operates with supply voltages from 4.5 V to 24 V in the ambient temperature range from 40 C up to 150 C. The HAL 320 is an ideal sensor for target wheel applica- tions, ignition timing, anti-lock brake systems, and revo- lution counting in extreme automotive and industrial en- vironments The HAL320 is available in two SMD-packages (SOT-89A and SOT-89B) and in a leaded version (TO-92UA). Features: distance between Hall plates: 2.25 mm operates from 4.5 V to 24 V supply voltage switching offset compensation at 62 kHz overvoltage protection reverse-voltage protection of Vpp-pin short-circuit protected open-drain output by thermal shutdown operates with magnetic fields from DC to 10 kHz output turns low with magnetic south pole on branded side of package and with a higher magnetic flux densi- ty in sensitive area $1 as in S2 on-chip temperature compensation circuitry mini- mizes shifts of the magnetic parameters over temper- ature and supply voltage range EMC corresponding to DIN 40839 Marking Code HAL 320SF, HAL 32080, 320A 320E 3206 HAL 320UA Operating Junction Temperature Range (T,) A: Ty = 40 C to +170 C E: Ty = 40 C to +100 C C: Tj =0C to +100 C The relationship between ambient temperature (T,a} and junction temperature (Ty) is explained on page 11. Hall Sensor Package Codes HAL XXXPA-T ts Temperature Range: A, E, or C Package: SF for SOT-89B SO tor SOT-89A UA for TO-92UA Type: 320 Example: HAL320UA-E Type: 320 Package: TO-92UA Temperature Range: Ty =40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brechure: Ordering Codes for Hall Sensors. MICRONAS INTERMETALLHAL320 Solderability HAL320 Package SOT-89A and SOT-89B: according to Yoo | Motages L] Breese] | ysieresis | [Sven Grout & IEC68-2-58 1 premarade Bias Contra! Protection Package TO-92UA: according to IEC68-2-20 Hall Plate $1 = Comparator OUT Switch - > j Output oO Hall Plaie 3 S82 L | Clock GND I 2 2 | GND Fig. 1: Pin configuration Fig. 2: HAL320 block diagram Functional Description Tose This Hall effect sensor is a monolithic integrated circuit with 2 Hall plates 2.25 mm apart that switches in re- sponse to differential magnetic fields. If magnetic fields with flux lines at right angles to the sensitive areas are applied to the sensor, the biased Hall plates force Hall voltages proportional to these fields. The difference of the Hall voltages is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the ditferential magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built- VoL in hysteresis eliminates oscillation and provides switch- ing behavior of the output without oscillation. Vout 4 VOH Ipp Magnetic offset caused by mechanical stress at the Hall plates is compensated for by using the switching offset compensation technique: An internal oscillator pro- vides a two phase clock (see Fig. 3). The ditference of How = 16 . . osc Bs the Hall voltages is sampled at the end of the first phase. At the end of the second phase, both sampled ditferen- tial Hall voltages are averaged and compared with the Fig. 3: Timing diagram actual switching point. Subsequently, the open drain output switches to the appropriate state. The amount of time that elapses from crossing the magnetic switch lev- el to the actual switching of the output can vary between zero and osc. a oa Shunt protection devices clamp voltage peaks at the Output-Pin and Vpp-Pin together with external series re- sistors. Reverse current is limited at the Vpp-Pin by an internal series resistor up to -15 V. No external reverse protection dicde is needed at the Vpp-Pin for values ranging from 0 V to-15 V. MICRONAS INTERMETALL 3HAL320 Outline Dimensions bg 4.5540.4 ____g! sensitive area Sy jt 1.7 tm a ak sensitive area Sp top view branded side fot 0.06+0.04 Fig. 4: Plastic Small Outline Transistor Package (SOT-89A) Weight approximately 0.04 g Dimensions in mm SPGS7001-8-B3M4E 0.1 sa, 1.540.05 a 4.06 * sensitive area 34 ra sensitive area Sp LT ala yf ifie 4 . || * 3.05201 xy | XB branded side SE SPGS7002-8-BE Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm lg 4.40.1 ______4| sensilive area Sy [a 1.7 m sensitive area So 2 top view =F {| | | | a4 FL | HL 04 1.15+0.05 | | branded side Fig. 6: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.04 g Dimensions in mm SPGS0022-2-B341E Dimensions of Sensitive Areas 0.08 mm x 0.17 mm feach) Positions of Sensitive Areas x, = -1.125 mm+0.2 mm Xo = 1.125mm+0.2 mm Xo Xq = 2.25 mm + 0.01 mm y=1.0mm +0.2 mm y =0.98 mm +0.2 mm y = 0.95 mm +0.2 mm X1 and Xs are referenced to the center of the package MICRONAS INTERMETALLHAL320 Absolute Maximum Ratings Parameter Min | Max | Unit Supply Voltage 1 -15 Test Voltage for Supply 1 -242) - Vv Reverse Supply Current 1 - 501) mA Supply Current through 1 -2009) 200) mA Protection Device Vo Output Voltage 3 0.3 281) V lo Continuous Output On Current 3 - 30 mA lomax Peak Output On Current 3 - 2503) mA loz Output Current through 3 -2003) 200) mA Protection Device Ts Storage Temperature Range -65 150 C Ty Junction Temperature Range 40 150 a 40 1704) 1) as long as Tymax is not exceeded 2) with a 220 series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t<1000h Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maxi- mum ratings conditions tor extended periods may affect device reliability. Recommended Operating Conditions Supply Voltage lo Continuous Output On Current 3 - 20 mA Vo Output Voltage 3 - a4 Ry Series Resistor 1 - 270 Q MICRONAS INTERMETALL 5HAL320 Electrical Characteristics at T, = 40 C to +170 C , Vpp = 4.5 V to 24 V, as not otherwise specitied in Conditions Typical Characteristics for Ty = 25 C and Vop = 12 V Supply Current lbp Supply Current over 1.8 47 7.5 mA Temperature Range Vppz Overvoltage Protection - 28.5 32.5 Vv lpp = 25 mA, Ty = 25 C, at Supply t= 20 ms Voz Overvoltage Protection at Gutput - 28 32.5 Vv lon = 25 mA, Ty = 25 C, t=20 ms VoL Output Voltage - 170 250 mV Vop = 12 V, lo= 20 mA, Ty = 25C VoL Output Voltage over - 170 400 mV lo=20 mA Temperature Range Voi Output Voltage over - 210 500 mv lo =25 mA Temperature Range lou Output Leakage Current - - 1 WA Vou = 4.5 V...24V, AB < ABorrf, Ty = 25 C lou Output Leakage Current over - - 10 BA Vou = 4.5 V...24 V, Temperature Range AB < ABorr, Ty = 150 C fose Internal Oscillator 42 62 75 kHz Ty = 25C Chopper Frequency fose Internal Oscillator Chopper Fre- 40 62 80 kHz quency over Temperature Range bento) Enable Time of Output - 35 - us Vpp = 12 V, after Setting of Vpp AB > ABon + 2mT or AB < ABorr- 2mT t Output Rise Time - 80 400 ns Vpop = 12 V, RL = 820 9, CL = 20 pF tf Output Fall Time - 50 400 ns Vpp = 12 V, RL = 820 , CL = 20 pF RihJsB Thermal Resistance Junction to - 150 200 KAW Fiberglass Substrate case Substrate Backside 30 mm x 10mm x 1.5mm, SOT-89A, pad size see Fig. 8 SOT-89B Rihus Thermal Resistance - 150 200 KAY case Junction to Soldering Point TO-92UA MICRONAS INTERMETALLHAL320 Magnetic Characteristics at T) = 40 C to +170 C, Vpp = 4.5 V to 24 V Typical Characteristics for Vpp = 12 V Magnetic flux density values of switching points (Condition: -10 mT < By < 10 mT) Positive flux density values reter to the magnetic south pole at the branded side ot the package. AB = Bs; Bsa On point ABon -15 12 | 25 15 12 25 | 2 12 3 -25 11 3.5 | mT AB > ABon Off point ABorr 2.5 -0.6 1.5 2.5 0.6 15 -3 0.5 2 3.5 0.4 2.5 mT AB < ABorr Hysteresis 1 1.8 4 1 1.8 4 1 1.7 4 0.8 1.5 4 mT AByyg = ABon ABorr Offset ABorrseT = -2 0.3 2 -2 0.3 2 2.5 0.4 25 | -3 0.4 3 mT (ABon + ABorr}/2 In back-biased applications, sensitivity mismatch between the two Hall plates S; and Se can lead to an additional offset of the magnetic switching points. In back-biased applications with the magnetic preinduction Bg, this sensitivity mis- match generates the magnetic offset ABofrsetpb = [$1 Se2l/S1 > Bo + ABorrset: Sensitivity mismatch) |S; -Sel/34 1.52) 1.02) 1.02) 0.54) % 1) Mechanical stress from packaging can influence sensitivity mismatch. 2) All values are typical values. The magnetic switching points are checked at room temperature at a magnetic preinduction of By = 150 mT. These magnetic parameters may change under external pressure and during the lifetime of the sensor. Parameter On point ABonbb Off point ABorFFbb 5.5 0.3 45 mT Hysteresis ABuys 1 1.8 4 mT Offset ABorrseTbb 5 0.6 +5 mT 5.0 Vou 4 Output Voltage ABorr min ABorr O ABon ABoN max ABnys AB = Bs; Bsa Fig. 8: Recommended pad size tor SOT-89A and Fig. 7: Definition of switching points and hysteresis SOT-89B; Dimensions in mm MICRONAS INTERMETALL tmT mT 2.0 1 2.0 Vop = 12 V Bon 15 Boy 15 5 Borr Borr r+ 1.0 hs, 1.0 aie = aden nnpeennantefeeneeentne] 0.5 0.5 TA = a C ermal Ta = 25 C 0.0 0.0 i | _ Tas 100C 05 9.5 | en Ta= 170C | a n. rata Se EE eee -1.0 ss, -1.0 pee Se 15 -1.5 Bort -2 -2 50 50 100 #150 200C 3 35 40 45 50 55 60V Ta Vpp Fig. 9: Magnetic switch points Fig. 11: Magnetic switch points versus temperature versus supply voltage mA 15 RON 10 Borr lop ; i rt : 5 Folawsssedssnenssfecseee olf 0 1 150 C / 0.5 ~e AS noe +5 f; mee f codrendn Ta = 25 C | -1.0 f t Ty = 150C -10 15 i i -15 15-10-5 0 5 10 15 20 2 30y * Yop Fig. 12: Supply current * Vop Fig. 10: Magnetic switch points versus supply voltage versus supply voltage MICRONAS INTERMETALLHAL320 mA kHz 8 100 1 Vop = 4.5 V...24 V 5 90 Ipp fose 80 6 Ta =40 C 70 Pe an! 60 Lo pve TAS 2S RC ha 50 Ta = 150C 40 30 20 10 0 4 5 6V 50 9 50 100 150 200C Vpp Ta Fig. 13: Supply current Fig. 15: Internal chopper frequency versus supply voltage versus ambient temperature mA mV 8 400 1 lo = 20 mA 7 350 lbp Vo 8 300 1 | Ta = 170C 5 \ 250 Ss INN Vpp= 12 V \ - 100 . PS mS 200 Ta = 100 C Vpp=4.5V 3 Ss 150 \ Ta= 25 ; | 2 400 Ta = 40 C 1 50 0 0 50 0 50 86100 6150 = 200C 9 5 1 15 2 2 30 - Ta Vop Fig. 14: Supply current Fig. 16: Qutput low voltage versus ambient temperature versus supply voltage MICRONAS INTERMETALL 9HAL320 mV 600 lo= 20 mA 500 VoL 400 300 \ N, Ta = 170C 00 ~~ Ta = 100 C S_- Tas 25C 100 ae Tas 40C Q wo f Vop Fig. 17: Qutput low voltage versus supply voltage 5 6 av nA 104 103 low 19? io! 10 Ta=100 C 10-1 10-2 10-3 10+ 10-6 10-6 15 20 25 30 * Vou Fig. 19: Qutput high current versus output voltage 35 V Ta Fig. 18: Qutput low voltage versus ambient temperature mV 400 | lo= 20 mA Voi 300 Vv A Vop=24V 200 Ye 100 <1 ) 50 0 50 100 150 200 C 102 10! lon Vou = 24 f 10 f 7 f / 102 J) Vou =45V 10-3 Z| 10-4 f 7 10-5 / -50 0 50 100 150 Ta, Fig. 20: Qutput leakage current versus ambient temperature 200 C 10 MICRONAS INTERMETALLHAL320 Application Notes Mechanical stress can change the sensitivity of the Hall plates and an offset of the magnetic switching points may result. External mechanical stress on the sensor must be avoided if the sensor is used under back-biased conditions. This piezo sensitivity of the sensor IC cannot be completely compensated for by the switching offset compensation technique. In order to assure switching the senser on and off in a back-biased application, the minimum magnetic modu- lation of the ditferential field should amount to more than 10% of the magnetic preinduction. If the HAL 320 sensor IC is used in back-biased applica- tions, please contact our Application Department. They will provide assistance in avoiding applications which may induce stress to the IGs. This stress may cause drifts ef the magnetic parameters indicated in this data sheet. For electromagnetic immunity, it is recommended to ap- ply a 4.7 nF capacitor between Vpp (pin 1) and Ground (pin 2). For automotive applications, a 220 series re- sistor to pin 1 is recommended. Because of the Ipp peak at 3.5 V, the series resistor should not be greater than 270 The series resister and the capacitor should be placed as close as possible to the IC. For optimal EMC behavior, the test circuits in Fig. 21 and Fig. 22 are rec- ommended. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature Ty) is higher than the temperature outside the package (ambient tem- perature Ta). Ty = Ta + AT At static conditions, the following equations are valid: tor SOT-89x: AT = lop * Voo * RihusB for TO-92UA: AT = lop * Vop * RihJa For typical values, use the typical parameters. For worst case calculation, use the max. parameters for Inp and Rih, and the max. value for Vpp trom the application. Recommended Test Circuits for Electromagnetic Compatibility Test pulses Veyic corresponding to DIN 40839. }reva Es pF Fig. 21: Test circuit 2: test procedure for class A Fig. 22: Test circuit 1: test procedure for class C MICRONAS INTERMETALL 11HAL320 Data Sheet History 1. Final data sheet: HAL320 Differential Hall Effect Sensor IC, July 15, 1998, 6251-439-1DS. First release of the final data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@intermetall.de Internet: htto:/Awww.intermetall.de Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (07/98) Order No. 6251-439-1DS All information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are ex- clusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. By this publication, MIGRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or oth- er rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. How- ever, our prior consent must be obtained in all cases. 12 MICRONAS INTERMETALL