PIN Diode Limiter
10 MHz - 12 GHz
MADL-011023-14150T
Rev. V2
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Electrical Specifications: TA = +25°C
Absolute Maximum Ratings6,7
Parameter Absolute Maximum
Peak Incident Power
1 µs pulse, 1% duty @ +85°C 48 dBm
CW Incident Power @ +85°C 37 dBm
Junction Temperature 175°C
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
6. Exceeding any one or combination of these limits may cause
permanent damage to this device.
7. MACOM does not recommend sustained operation near these
survivability limits.
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss P incident = -10 dBm, F = 750 MHz dB — 0.05 0.10
Return Loss P incident = -10 dBm, F = 750 MHz dB — 35 —
P1dB Input Compression Power F = 1 GHz dBm — 8 —
C.W. Incident Power5 F = 1 GHz dBm — 40 —
Peak Incident Power5 1 µs, 1 % duty @ 1 GHz dBm — 50 —
CW Flat Leakage Power F = 1 GHz dBm — 20 —
Pulsed Flat Leakage Power 50 dBm, 1 µs, 1 % duty @ 1 GHz dBm — 26 —
Spike Leakage Power 50 dBm, 1 µs, 1 % duty @ 1 GHz dBm — 28 —
Spike Leakage Energy 50 dBm, 1 µs, 1 % duty @ 1 GHz ergs — 0.1 —
Recovery Time
(1 dB of Insertion Loss) 50 dBm, 1 µs, 1 % duty @ 1 GHz ns — 100 —
Input 3rd Order
Intermodulation Products (IIP3) F1 = 1.000 GHz, F2 = 1.010 GHz @ 0 dBm dBm — 20 —
5. Incident power ratings defined with 1.2:1 source VSWR and 1.2:1 max load VSWR.