30-36 GHz GaAs MMIC Power Amplifier L t Alpha Features i Single Gate and Drain Biases @ 26 dBm Output Power at 35 GHz @ 12 dB Small Signal Gain @ 0.25 um Ti/Pd/Au Gates M@ 100% On-Wafer RF and DC Testing @ 100% Visual Inspection to MIL-STD-883 MT 2010 Description Alphas two-stage reactively-matched Ka band GaAs MMIC power amplifier has a P; gp in excess of 24 dBm with 11 dB associated gain and 15% power added efficiency at 35 GHz. The chip uses Alphas proven 0.25 um MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETS employ surface AA035P2-00 Chip Outline 2.920 = 2.775 e712 | 1.460 Al 1.460 ') 0.209 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings ol. . . Characteristic Value passivation to ensure a rugged reliable part with through- : substrate via holes and gold-based backside metallization Operating Temperature (Tc) S5C to +90C to facilitate solder or epoxy die attach processes. Single Storage Temperature (Ts) 65C to +150C gate and drain bias pads cover both stages, with the Bias Voltage (Vp) 7 Voc added convenience that the chip can be wire bonded from Power In (Pin) 22 dBm either side for either bias. All chips are screened for gain, Junction Temperature (T,) 175C output power, efficiency and S-parameters at 35 GHz prior to shipment for guaranteed performance. A broad range of applications exist in both the military and commercial areas where high power and gain are required. Electrical Specifications at 25C (Vps = 6 V, Veg = -1 V) Parameter Symbol Min. Typ. Max. Unit Drain Current (at Saturation) Ibs 325 450 mA Small Signal Gain G 10 12 dB Input Return Loss RL; -13 -9 dB Output Return Loss RLo -13 6 dB Output Power at 1 dB Gain Compression Pi gB 23 24.5 dBm Saturated Output Power Pgat 25 26 dBm Gain at Saturation Gsat 5 6.5 dB Thermal Resistance! Osc 42 C 1.Calculated value based on measurement of discrete FET. Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1 Specifications subject to change without notice. 2/99A 30-36 GHz GaAs MMIC Power Amplifier AA035P2-00 Typical Performance Data 15 10 Sat 5 0 5 (dB) -10 -15 -20 -25 25 30 35 40 Frequency (GHz) Typical Small Signal Performance S-Parameters (Vps = 6 V) Bias Arrangement .0O1 uF 50 pF 50 pF .01 uF Ve =-03V Vos =6 V tL rt cs 5 RF IN A RF OUT ke) : | Vou 03VL tT T T Vos =6V I of zx i .0O1 uF 50 pF 50 pF .01 uF The AA035P2-00 can be biased from either or both sides for both gate and 26 . ZO 22 IY | V7 16 Pout (dBm) 5 10 15 20 Pin (dBm) Typical Output Power Compression (F = 35 GHz, Vps = 6 V) Circuit Schematic Detail A Ve Vb SEE DETAILA G W =. i RF IN RF OUT drain biases. For biasing on, adjust Vas from zero to approximately -1 V. Adjust Vps from | zero to the desired value (4 V-6 V recommended). Adjust Vag to achieve the desired Ips (325 mA recommended). For biasing off, reverse the biasing on procedure. D Ve Vb 2 Alpha Industries, Inc. [781] 935-5150 Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com Specifications subject to change without notice. 2/99A