2N5322
2N5323
Document Number 3073
Issue 2
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Rthj-case
Rthj-amb
17.5
175
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max °C/W
°C/W
DESCRIPTION
The 2N5322 and 2N5323 are silicon planar
epitaxial PNP transistors in jedec TO-39
metal case intended for high voltage medium
power applications in industrial and
commercial equipment.
The complementary NPN types are the
2N5320 and 2N5321 respectively
ABSOLUTE MAXIMUM RATINGS
TCASE = 25°c unless otherwise stated 2N53232N5322
HIGH SPEED
MEDIUM VOLTAGE
SWITCHES
VCBO Collector – Base Voltage (IE= 0)
VCEV Collector – Emitter Voltage (VBE = 1.5v)
VCEO Emitter – Base Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICContinuous Collector Current
IBBase Current
Ptot Total Dissipation at Tamb = 25°C
Tcase = 50°C
Tstg,TjStorage and Junction temperature
-1.2A
-1A
1W
10W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)