1C6D08065A, Rev. -, 04-2019
C6D08065A
Silicon Carbide Schottky Diode
Z-Rec® 
Features
• New 6th Generation Technology
• Low Forward Voltage Drop (VF)
• Zero Reverse Recovery Current
• Zero Forward Recovery Voltage
• Low Leakage Current (Ir)
• Temperature-Independent Switching Behavior
• F
Benets
• 
• Increase System Power Density
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Switch Mode Power Supplies (SMPS)
• Server/Telecom Power Supplies
• Industrial Power Supplies
• Solar
• UPS
Package
TO-220-2
Part Number Package Marking
C6D08065A TO-220-2 C6D08065
PIN 1
PIN 2
CASE
VRRM = 650 V
IF (TC=155˚C) = 8 A
Qc = 29 nC
Maximum Ratings (TC
Symbol Parameter Value Unit Test Conditions Note
VRRM Repetitive Peak Reverse Voltage 650 V
VDC DC Blocking Voltage 650 V
IFContinuous Forward Current
30
16
8
A
TC
TC
TC
Fig. 3
IFRM Repetitive Peak Forward Surge Current 37
22 ATCP 
TCP
IFSM Non-Repetitive Peak Forward Surge Current 69
63 ATCp
TCp Fig. 8
I Non-Repetitive Peak Forward Surge Current 860
790 ATCP 
TCP  Fig. 8
Ptot Power Dissipation 92.6
40.1 WTC
TC Fig. 4
TJstg Operating Junction and Storage Temperature -55 to
+175 
TO-220 Mounting Torque 1
8.8
Nm
lbf-in
M3 Screw
6-32 Screw
2C6D08065A, Rev. -, 04-2019
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForward Voltage 1.27
1.37
1.50
1.60 VIF = 8 A TJ=25°C
IF = 8 A TJ=175°C Fig. 1
IRReverse Current 2
15
40
160 μA VR = 650 V TJ=25°C
VR = 650 V TJ=175°C Fig. 2
QCTotal Capacitive Charge 29 nC VR = 400 V, IF = 8A
TJ = 25°C Fig. 5
C Total Capacitance
518
57
45
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
ECCapacitance Stored Energy 4.4 μJ VR = 400 V Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter Typ. Unit Note
RθJC Thermal Resistance from Junction to Case 1.62 °C/W Fig. 9
Typical Performance
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
IF (A)
VF (V)
IF (A)
VF (V)
IR (mA)
VR (V)
IR (mA)
VR (V)
0
20
40
60
80
100
0100 200 300 400 500 600 700 800
Reverse Leakage Current, I
RR
(uA)
Reverse Voltage, VR(V)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
J
= -55 °C
T
J
= 25 °C
IR (mA)
VR (V)
0
2
4
6
8
10
12
14
16
18
20
0.5 1.0 1.5 2.0 2.5
Foward Current, I
F
(A)
Foward Voltage, V
F
(V)
T
J
= -55°C
T
J
= 25°C
T
J
= 75°C
T
J
= 175°C
T
J
= 125°C
IF (A)
VF (V)
3C6D08065A, Rev. -, 04-2019
Figure 3. Current Derating Figure 4. Power Derating
6
8
10
12
14
0
2
4
25 50 75 100 125 150 175
Figure 5. Total Capacitance Charge vs. Reverse Voltage Figure 6. Capacitance vs. Reverse Voltage
Typical Performance
4
6
8
10
12
Capacitive Charge, Q
C
(nC)
Conditions:
T
J
= 25 °C
0
2
4
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
60
80
100
120
140
160
180
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
20
40
60
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, VR(V)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
IF(peak) (A)
PTot (W)
TC ˚C
QC (nC)
VR (V)
C (pF)
TC ˚C
IF(peak) (A)
PTot (W)
TC ˚C
QC (nC)
VR (V)
C (pF)
VR (V)
IF(peak) (A)
TC ˚C
0
10
20
30
40
50
60
70
80
90
25 50 75 100 125 150 175
PTOT
(W)
TC(°C)
PTot (W)
TC ˚C
0
5
10
15
20
25
30
35
40
45
0100 200 300 400 500 600 700
Capacitive Charge, QC(nC)
Reverse Voltage, VR(V)
Conditions:
T
J
= 25 °C
QC (nC)
VR (V)
Conditions:
Vtest = 25 mV
C (pF)
VR (V)
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150 175
I
F
(A)
T
C
(°C)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
IF(peak) (A)
TC ˚C
0
10
20
30
40
50
60
70
80
90
100
25 50 75 100 125 150 175
P
TOT
(W)
T
C
(°C)
TC ˚C
PTot (W)
4C6D08065A, Rev. -, 04-2019
Typical Performance
Figure 7. Capacitance Stored Energy
Figure 9. Transient Thermal Impedance
1
10
0.5
0.3
0.1
0.05
0.02
10E-3
100E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 10 100
0.01 SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
Thermal Resistance (˚C/W)
T (Sec)
EC(mJ)
Thermal Resistance (˚C/W)
T (Sec)
0
2
4
6
8
10
12
0100 200 300 400 500 600 700
Capacitance Stored Energy, E
C
(mJ)
Reverse Voltage, V
R
(V)
EC(mJ)
VR (V)
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, ZthJC (oC/W)
Time, tp(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
0
2
4
6
8
10
12
0100 200 300 400 500 600 700
Capacitance Stored Energy, E
C
(mJ)
Reverse Voltage, V
R
(V)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
10
100
1,000
10E-6 100E-6 1E-3 10E-3
I
FSM
(A)
Time, t
p
(s)
TJ_initial = 25 °C
TJ_initial = 110 °C
tp (s)
IFSM (A)
1E-3
10E-3
100E-3
1
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junction To Case Impedance, Z
thJC
(
o
C/W)
Time, t
p
(s)
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
Thermal Resistance (˚C/W)
T (Sec)
5C6D08065A, Rev. -, 04-2019
POS Inches Millimeters
Min Max Min Max
A .381 .410 9.677 10.414
B .235 .255 5.969 6.477
C .100 .120 2.540 3.048
D .223 .337 5.664 8.560
D1 .457-.490 11.60-12.45 typ
D2 .277-.303 typ 7.04-7.70 typ
D3 .244-.252 typ 6.22-6.4 typ
E .590 .615 14.986 15.621
E1 .302 .326 7.68 8.28
E2 .227 251 5.77 6.37
F .143 .153 3.632 3.886
G 1.105 1.147 28.067 29.134
H .500 .550 12.700 13.970
L .025 .036 .635 .914
M .045 .055 1.143 1.550
N .195 .205 4.953 5.207
P .165 .185 4.191 4.699
Q .048 .054 1.219 1.372
S 3° 6° 3° 6°
T 3° 6° 3° 6°
U 3° 6° 3° 6°
V .094 .110 2.388 2.794
W .014 .025 .356 .635
X 3° 5.5° 3° 5.5°
Y .385 .410 9.779 10.414
z.130 .150 3.302 3.810
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
PIN 1
PIN 2
CASE
Recommended Solder Pad Layout
Part Number Package Marking
C6D08065A TO-220-2 C6D08065
TO-220-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
Package Dimensions
Package TO-220-2
66 C6D08065A, Rev. -, 04-2019
Copyright © 2019 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

4600 Silicon Drive

USA Tel: +1.919.313.5300
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www.cree.com/power
• RoHS Compliance
-


or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• 



Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
• Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
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