TVS Diode Array (SPA(R) Diodes) Enhanced ESD Discrete TVS Series - SP3522 SP3522 0.15pF 22kV ESD Protection diodes RoHS Pb GREEN ELV Description The SP3522 integrates ultra low capacitance diodes to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust component can safely absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (8kV contact discharge) without performance degradation. The extremely low loading capacitance also makes it ideal for protecting high speed signal pins such as V-By-One(R), HDMI, USB3.0, USB2.0, and IEEE 1394. Pinout Features 0201 DFN SOD882 1 1 * ESD, IEC 61000-4-2, 22kV contact, 22kV air * Facilitates excellent signal integrity * EFT, IEC 61000-4-4, 40A (tP=5/50ns) * ELV Compliant * Lightning, IEC 610004-5, 2nd edition, 2.5A (tP=8/20s) * Halogen free, Lead free and RoHS compliant * Low capacitance of 0.15pF (TYP) at 3GHz 2 2 Bottom View Functional Block Diagram 1 Applications 1 * Ultra-high speed data lines * C onsumer, mobile and portable electronics * USB 3.1, 3.0, 2.0 * Tablet PC and external storage with high speed interfaces * HDMI 2.0, 1.4a, 1.3 * V-by-One(R) * LVDS interfaces ectional * Moisture Sensitivity Level(MSL -1) * Low profile 0201 DFN packages and SOD882 packages * DisplayPort(TM) 2 * AEC-Q101 qualified * Applications requiring high ESD performance in small packages 2 Bidirectional (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/28/20 TVS Diode Array (SPA(R) Diodes) Enhanced ESD Discrete TVS Series - SP3522 Absolute Maximum Ratings Symbol Parameter Value Units IPP Peak Current (tp=8/20s) 2.5 A TOP Operating Temperature -45 to 125 C TSTOR Storage Temperature -55 to 150 C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics - (TOP=25C) Parameter Test Conditions Min Typ Input Capacitance @ VR = 0V, f = 3GHz 0.15 Breakdown Voltage VBR @ IT=1mA 9.2 Max Units pF V Reverse Working Voltage IR1A Reverse Leakage Current IL @ VRWM=5.0V 0.02 TLP, tP=100ns, I/O to GND 0.96 VCL @ IPP=2.5A 14.5 V Dynamic Resistance 2 Clamping Voltage1 ESD Withstand Voltage1 IEC 61000-4-2 (Contact) 22 IEC 61000-4-2 (Air) 22 7.0 V 1 A kV Note: 1. Parameter is guaranteed by design and/or component characterization. 2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Clamping Voltage vs IPP 8/20s Pulse Waveform 110% 16.0 100% 90% 12.0 80% 10.0 Percent of IPP Clamp Voltage (VC) 14.0 8.0 6.0 4.0 70% 60% 50% 40% 30% 2.0 20% 0.0 10% 1 1.5 2 Peak Pulse Current-IPP (A) 2.5 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/28/20 TVS Diode Array (SPA(R) Diodes) Enhanced ESD Discrete TVS Series - SP3522 Positive Transmission Line Pulsing (TLP) Plot Negative Transmission Line Pulsing (TLP) Plot 0 35 -5 30 -10 TLP Current (A) TLP Current (A) 40 25 20 15 -15 -20 -25 10 -30 5 -35 0 -40 0 5 10 15 20 25 30 35 40 45 50 55 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 TLP Voltage (V) TLP Voltage (V) IEC 61000-4-2 +8 kV Contact ESD Clamping Voltage -5 0 IEC 61000-4-2 -8 kV Contact ESD Clamping Voltage Soldering Parameters Pre Heat Pb - Free assembly - Temperature Min (Ts(min)) 150C - Temperature Max (Ts(max)) 200C - Time (min to max) (ts) 60 - 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3C/second max TS(max) to TL - Ramp-up Rate Reflow 3C/second max - Temperature (TL) (Liquidus) 217C - Temperature (tL) 60 - 150 seconds Peak Temperature (TP) 260+0/-5 C Time within 5C of actual peak Temperature (tp) 20 - 40 seconds Ramp-down Rate 6C/second max Time 25C to peak Temperature (TP) 8 minutes Max. Do not exceed 260C tP TP Critical Zone TL to TP Ramp-up Temperature Reflow Condition TL T S(max) tL Ramp-dow Ramp-down Preheat T S(min) tS 25 time to peak temperature Time (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/28/20 TVS Diode Array (SPA(R) Diodes) Enhanced ESD Discrete TVS Series - SP3522 Package Dimensions -- 0201 DFN D e E L2 Symbol PIN1 L1 Top View h 1 Inches Typ. Max Min Typ. Max A 0.23 0.28 0.33 0.009 0.011 0.013 A1 0.00 0.02 0.05 0.000 0.001 0.002 L1 0.12 0.18 0.24 0.005 0.007 0.009 L2 0.18 0.24 0.30 0.007 0.009 0.012 D 0.55 0.60 0.65 0.022 0.024 0.026 E 0.25 0.30 0.35 0.010 0.012 0.014 e 0.35 (BSC) 0.014 (BSC) h 0.05 ( x 45 ) 0.002 ( x 45 ) A1 A Bottom View Millimeters Min Side View Side View Package outline 0.32mm 0.14mm 0.24mm Recommended soldering pad layout Package Dimensions -- SOD882 D e h E L2 Symbol L1 PIN1 Top View 1 Bottom View Inches Typ. Max Min Typ. Max A 0.40 0.45 0.50 0.016 0.018 0.020 A1 0.00 0.02 0.05 0.000 0.001 0.002 L1 0.20 0.25 0.30 0.008 0.010 0.012 L2 0.45 0.50 0.55 0.018 0.020 0.022 D 0.90 1.00 1.10 0.035 0.039 0.043 E 0.50 0.60 0.70 0.020 0.024 0.028 e 0.65 (BSC) 0.026 (BSC) h 0.125 ( x 45 ) 0.005 ( x 45 ) 0.65mm A1 A Package outline Millimeters Min Side View 0.40mm 0.30mm 1.10mm Part Marking System + Recommended soldering pad layout Part Numbering System SP 3522 TVS Diode Arrays (SPA(R)Diodes) - 01 U T G G= Green T= Tape & Reel Series Number of Channels Package U: 0201 DFN E: SOD882 Ordering Information Part Number Package Min. Order Qty. SP3522-01UTG 0201 DFN 15000 SP3522-01ETG SOD882 10000 (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/28/20 TVS Diode Array (SPA(R) Diodes) Enhanced ESD Discrete TVS Series - SP3522 Embossed Carrier Tape & Reel Specification -- 0201 DFN P1 D0 P2 P0 E1 F W D1 T A0 K0 B0 Symbol Millimeters A0 0.33 min/0.41 max B0 0.63 min/0.71 max D0 o 1.50 +0.10/ -0 D1 o 0.20 +/- 0.05 E1 1.75+/-0.10 F 3.50+/-0.05 K0 0.30 min/0.39 max P0 4.00+/-0.10 P1 2.00+/-0.10 P2 2.00+/-0.05 W 8.00+0.30/-0.10 T 0.13 min/0.25 max ,Ref. Device Orientation in Tape Pin 1 Location ,Ref. ,Ref. 8mm TAPE AND REEL Embossed Carrier Tape & Reel Specification -- SOD882 Symbol Millimeters A0 0.70+/-0.045 B0 1.10+/-0.045 K0 0.65+/-0.045 F 3.50+/-0.05 P1 2.00+/-0.10 W 8.00 + 0.30 -0.10 ,Ref. Device Orientation in Tape ,Ref. Pin 1 Location 8mm TAPE AND REEL ,Ref. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. (c) 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 10/28/20