2N6660X MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES * Switching Regulators 0.89 max. (0.035) * Converters 7.75 (0.305) 8.51 (0.335) dia. * Motor Drivers 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO-39 METAL PACKAGE Underside View PIN 1 - Source PIN 2 - Gate PIN 3 - Drain CASE - Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) VDS Drain - Source Voltage 60V VGS Gate - Source Voltage 40V ID Continuous Drain Current @ TCASE = 25C 1.1A ID Continuous Drain Current @ TCASE = 100C 0.8A IDM Pulsed Drain Current * PD Power Dissipation @ TCASE = 25C 6.25W PD Power Dissipation @ TCASE = 100C 2.5W Tj Operating Junction Temperature Range -55 to 150C Tstg Storage Temperature Range -55 to 150C TL Lead Temperature (1/16" from case for 10 sec.) Semelab plc. 3A Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 300C DOC: 7083 iss 1 2N6660X ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC CHARACTERISTICS BVDSS Drain - Source Breakdown Voltage VGS = 0V ID = 10A 60 100 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1mA 0.8 1.5 2.2 IGSS Gate - Body Leakage Current 1 100 TCASE = 125C 5 500 VDS = Max. Ratings VGS = 0V 1 10 50 500 IDSS Zero Gate Voltage Drain Current VGS = 15V VDS = 0V VDS =0.8VMax.Ratings VGS = 0V ID(on)* On-State Drain Current VDS = 2VDS(ON) VGS = 10V VGS = 5V RDS(on)* Drain - Source On Resistance VDS(on)* Drain - Source On Voltage TCASE = 125C 1.5 ID = 0.3A VGS = 10V 1.7 V nA A A 4.7 5 2.7 3 ID = 1A TCASE = 125C 3.9 4.2 VGS = 5V ID = 0.3A 1.4 1.5 VGS = 10V ID = 1A 2.7 3 VDS = 25V ID = 0.5A VGS = 0V VDS = 25V V DYNAMIC CHARACTERISTICS gFS* Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 170 f = 1MHz 195 mS 35 50 33 40 2 10 pF SWITCHING CHARACTERISTICS tON Turn-On Time VDD = 25V ID = 1A 8 10 tOFF Turn-Off Time RL = 23 RG = 25 8 10 ns BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current (Body Diode) ISM Source Current1 (Body Diode) VSD Diode Forward Voltage 1 Modified MOSPOWER Symbol Showing The Integral PN Juncion Rectifier IS = -1.1A VGS = 0V , -1.1 / A -3 5 TCASE = 125C -0.9 V Max. Unit 170 20 C/W C/W 1 Pulse Test: Pulse width 300 s , Duty Cycle 2% Parameter RJA RJC Thermal Resistance, Junction to Ambient (Free Air Operation) Thermal Resistance, Junction to Case Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Min. Typ. DOC: 7083 iss 1