BAS40-04LT1G, SBAS40-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features http://onsemi.com 40 VOLTS SCHOTTKY BARRIER DIODES Extremely Fast Switching Speed Low Forward Voltage AEC Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 40 V Forward Power Dissipation @ TA = 25C Derate above 25C PF 225 1.8 mW mW/C TJ, Tstg -55 to +150 C Forward Continuous Current IFM 120 Single Forward Current tv1s t v 10 ms IFSM Thermal Resistance (Note 1) Junction-to-Ambient (Note 2) RqJA Operating Junction and Storage Temperature Range ANODE 1 CATHODE 2 3 CATHODE/ANODE MARKING DIAGRAM CB MG G mA 1 mA 200 600 508 311 SOT-23 (TO-236) CASE 318 STYLE 11 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ minimum pad. 2. FR-4 @ 1.0 x 1.0 in pad. CB M G = Specific Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAS40-04LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SBAS40-04LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 11 1 Publication Order Number: BAS40-04LT1/D BAS40-04LT1G, SBAS40-04LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage (IR = 10 mA) V(BR)R Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (VR = 25 V) IR Forward Voltage (IF = 1.0 mA) VF Forward Voltage (IF = 10 mA) VF Forward Voltage (IF = 40 mA) VF IR , REVERSE CURRENT (A) 100 10 150C 1.0 125C 85C 25C -40C 0.1 0 0.1 0.2 0.3 -55C 0.4 Max 40 - - 5.0 - 1.0 - 380 - 500 - 1.0 Unit V pF mA mV mV V TA = 150C 125C 10 85C 1.0 0.1 25C 0.01 0.001 0.5 0.6 0.7 0 0.8 5.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 15 VR, REVERSE VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5.0 20 Figure 2. Reverse Current versus Reverse Voltage 3.5 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 Min 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 35 40 25 BAS40-04LT1G, SBAS40-04LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE-ANODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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