NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8FL Features * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com V(BR)DSS Applications * Refer to Application Note AND8195/D * CPU Power Delivery * DC-DC Converters RDS(ON) MAX 6.72 mW @ 10 V 30 V D (5,6) Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V Continuous Drain Current RqJA (Note 1) TA = 25C TA = 85C ID 13.5 9.7 A Power Dissipation RqJA (Note 1) TA = 25C TA = 85C PD 2.16 1.1 W Continuous Drain Current RqJA v10 s TA = 25C TA = 85C ID 21.8 15.7 A Power Dissipation RqJA v10 s TA = 25C TA = 85C PD 5.7 2.9 W TA = 25C TA = 85C ID 8.6 6.2 A Power Dissipation RqJA (Note 2) TA = 25C TA = 85C PD 0.87 0.45 W Continuous Drain Current RqJC (Note 1) TC = 25C TC = 85C ID 59 42.5 A Power Dissipation RqJC (Note 1) TC = 25C TC = 85C PD 41.7 21.7 W TA = 25C IDM 177 A TJ, TSTG -55 to +150 C IS 35 A Continuous Drain Current RqJA (Note 2) Pulsed Drain Current 59 A 11.6 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter ID MAX G (4) S (1,2,3) N-CHANNEL MOSFET Steady State tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) D Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain-to-Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 25.6 A, L = 0.3 mH, RG = 25 W) EAS 98 mJ TL 260 C Lead Temperature for Soldering Purposes (1/8" from case for 10 s) MARKING DIAGRAM S S S G 1 SO-8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ D 4841NH AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping NTMFS4841NHT1G SO-8FL (Pb-Free) 1500 / Tape & Reel NTMFS4841NHT3G SO-8FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. (c) Semiconductor Components Industries, LLC, 2013 August, 2013 - Rev. 7 1 Publication Order Number: NTMFS4841NH/D NTMFS4841NH THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 3 Junction-to-Ambient - Steady State (Note 1) RqJA 57.8 Junction-to-Ambient - Steady State (Note 2) RqJA 143.5 Junction-to-Ambient (tv10 s) RqJA 22.1 Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 28 VGS = 0 V, VDS = 24 V mV/C TJ = 25 C 1 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance 1.5 VGS(TH)/TJ RDS(on) 2.1 2.5 5.6 VGS = 10 V to 11.5 V ID = 30 A 4.8 ID = 15 A 4.8 VGS = 4.5 V ID = 30 A 8.8 ID = 15 A 8.5 gFS VDS = 1.5 V, ID = 50 A V mV/C 6.72 11.6 57 mW S CHARGES AND CAPACITANCES Input Capacitance CISS 939 1565 2113 Output Capacitance COSS 195 325 439 Reverse Transfer Capacitance CRSS 103.8 173 242.2 11.3 15.82 1.4 2.1 5.3 7.9 4.5 6.8 24.4 33 12.1 18.1 23.3 34.9 14.1 21.1 4.9 7.3 td(ON) 7.2 10.7 tr 20.6 30.9 21.9 32.9 2.9 4.4 VGS = 0 V, f = 1 MHz, VDS = 12 V Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 11.5 V, VDS = 15 V, ID = 30 A pF nC nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf td(OFF) VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns ns NTMFS4841NH ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25C 0.86 1.2 TJ = 125C 0.71 Unit DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 30 A tRR ta tb V 18.8 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 11.4 ns 7.4 QRR 6.7 Source Inductance LS 0.93 Drain Inductance LD Gate Inductance LG Gate Resistance RG 26.7 nC PACKAGE PARASITIC VALUES TA = 25C 0.005 1.84 0.90 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 nH W NTMFS4841NH TYPICAL CHARACTERISTICS 4.6 V 4.8 V 5.0 V 80 4.4 V 7.0 V 4.2 V 10 V 4.0 V 90 TJ = 25C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 95 90 85 80 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 3.8 V 3.6 V 3.4 V 70 60 50 TC = 25C 40 30 20 TC = 125C 10 VGS = 3.2 V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 6 0 1 2 0.010 0.009 0.008 0.007 0.006 0.005 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 VGS, GATE-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.011 0.004 5 0.012 0.0115 T = 25C J 0.011 0.0105 0.01 0.0095 VGS = 4.5 V 0.009 0.0085 0.008 0.0075 0.007 0.0065 0.006 0.0055 VGS = 11.5 V 0.005 0.0045 0.004 0.0035 0.003 0.0025 0.002 10 15 20 25 30 35 6 7 40 45 50 55 ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 10000 1.7 1.6 ID = 30 A VGS = 10 V 1.5 VGS = 0 V 1000 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 4 Figure 2. Transfer Characteristics ID = 30 A TJ = 25C 0.012 3 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 0.013 TC = -55C 1.3 1.2 1.1 1 0.9 0.8 TJ = 150C TJ = 125C 100 10 TJ = 25C 1 0.7 0.6 -55 -35 -15 5 25 45 65 85 105 0.1 145 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 30 NTMFS4841NH 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 12 TJ = 25C CISS COSS CRSS 15 10 5 0 5 VGS VDS 10 15 20 25 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS 9 7.5 6 4.5 0 0 2 IS, SOURCE CURRENT (A) td(off) tr 10 td(on) tf 10 100 100 ms 10 1 ms RDS(on) Limit Thermal Limit Package Limit 10 ms dc 10 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 10 ms 100 1 10 12 14 16 18 20 22 24 15 10 5 0 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1.0 Figure 10. Diode Forward Voltage versus Current VGS = 20 V Single Pulse TC = 25C 0.1 8 20 Figure 9. Resistive Switching Time Variation versus Gate Resistance 1 6 VGS = 0 V TJ = 25C 25 RG, GATE RESISTANCE (W) 1000 4 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge 30 1 VDD = 15 V VGS = 0 V - 11.5 V ID = 30 A TJ = 25C Qg, TOTAL GATE CHARGE (nC) 100 VDS = 15 V ID = 15 A VGS = 11.5 V QGD 1.5 Figure 7. Capacitance Variation t, TIME (ns) QGS 3 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) 1 QT 10.5 110 ID = 25.6 A 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 5 NTMFS4841NH TYPICAL CHARACTERISTICS 80 70 60 gFS, (S) 50 40 30 20 10 VDS = 1.5 V 0 0 10 20 30 40 50 60 70 80 DRAIN CURRENT (A) R(t), THERMAL TRANSIENT RESISTANCE (C/W) Figure 13. GFS versus Drain Current 100 50% Duty Cycle 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (sec) Figure 14. Thermal Resistance http://onsemi.com 6 1 10 100 1000 NTMFS4841NH PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE H 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 c A1 4 TOP VIEW C 3X e 0.10 C SIDE VIEW C A B 0.05 c DETAIL A 4X 0.750 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 4X 1.000 e/2 1 0.965 4 K G 3X 1.270 L PIN 5 (EXPOSED PAD) SOLDERING FOOTPRINT* b 0.10 SEATING PLANE DETAIL A A 0.10 C 8X DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 1.330 2X 0.905 2X E2 L1 0.495 M 4.530 3.200 0.475 D2 2X 1.530 BOTTOM VIEW 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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